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1. 发明授权

US06528337B1 Process of producing semiconductor layer structure 有权
标题翻译：制造半导体层结构的工艺
公开(公告)号：US06528337B1
公开(公告)日：2003-03-04
申请号：US09544982
申请日：2000-04-07
申请人： Satoshi Arakawa , Toshikazu Mukaihara , Nobumitsu Yamanaka , Akihiko Kasukawa
发明人： Satoshi Arakawa , Toshikazu Mukaihara , Nobumitsu Yamanaka , Akihiko Kasukawa
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01L33/06 , H01S5/2275 , H01S5/34306 , H01S5/3434 , H01S5/4043 , H01S5/4087
摘要： Disclosed is a process of producing a semiconductor layer structure which emits lights with a plurality of luminescence wavelengths from the same quantum well structure. The layer structure has a layer structure which has the quantum well structure located between a lower light-confinement layer and an upper light-confinement layer. At least a part of the quantum well structure is an area which has a shorter luminescence wavelength than those of the other portions. This area is produced by stacking a lower cladding layer, the lower light-confinement layer, the quantum well structure, the upper light-confinement layer and a first semiconductor layer having a first conductivity type on a semiconductor substrate by epitaxial growth and further stacking a second semiconductor layer having the opposite conductivity type to that of the first semiconductor layer on the entire surface or a partial surface of the first semiconductor layer. This second semiconductor layer may be removed after the formation.
摘要翻译：公开了一种从相同的量子阱结构产生发射具有多个发光波长的光的半导体层结构的方法。层结构具有层结构，其具有位于下限光层和上光限制层之间的量子阱结构。量子阱结构的至少一部分是具有比其它部分更短的发光波长的区域。该区域是通过外延生长在半导体衬底上堆叠下包层，下光限制层，量子阱结构，上光限制层和具有第一导电类型的第一半导体层，并进一步堆叠第二半导体层与第一半导体层的整个表面或第一半导体层的部分表面具有相反的导电类型。该第二半导体层可以在形成之后被去除。

2. 发明授权

US06278139B1 Semiconductor light-emitting diode 有权
标题翻译：半导体发光二极管
公开(公告)号：US06278139B1
公开(公告)日：2001-08-21
申请号：US09402757
申请日：2000-06-09
申请人： Takuya Ishikawa , Satoshi Arakawa , Toshikazu Mukaihara , Akihiko Kasukawa
发明人： Takuya Ishikawa , Satoshi Arakawa , Toshikazu Mukaihara , Akihiko Kasukawa
IPC分类号： H01L3300
CPC分类号： H01L33/44 , H01L33/14 , H01L33/30 , H01L33/305 , H01L33/36 , H01L33/38
摘要： A semiconductor light emitting diode (10) is formed on an n-type GaAs substrate and includes: an AlGaInP based double heterojunction structure in which an active layer (16) is sandwiched between cladding layers (14, 18); an upper P-type contact layer 20; and a ring-shaped upper electrode (22) having an opening (28), wherein light is emitted through the upper p-type contact layer (20) and the opening (28) of the upper electrode (22). The upper p-type contact layer (20) is a semiconductor layer made of AlGaAs or AlGaAsP having an Al content of 0.5 or more, and doped with impurities at a carrier concentration of 5×1018 cm−3 or more. The semiconductor light emitting diode emits light in a desired emission pattern and at higher intensities, and is capable of being fabricated by relatively simple processes.
摘要翻译：半导体发光二极管（10）形成在n型GaAs衬底上，包括：AlGaInP基双异质结结构，其中有源层（16）夹在包层（14,18）之间; 上P型接触层20; 以及具有开口（28）的环形上电极（22），其中通过上电极（22）的上p型接触层（20）和开口（28）发射光。上部p型接触层（20）是Al含量为0.5以上的AlGaAs或AlGaAsP的半导体层，掺杂了载流子浓度为5×10 18 cm -3以上的杂质。半导体发光二极管以期望的发射模式和较高的强度发光，并能够通过相对简单的工艺制造。

3. 发明授权

US06911713B2 Optical device having a carrier-depleted layer 失效
标题翻译：具有载流子耗尽层的光学器件
公开(公告)号：US06911713B2
公开(公告)日：2005-06-28
申请号：US10617661
申请日：2003-07-14
申请人： Nariaki Ikeda , Takeharu Yamaguchi , Satoshi Arakawa , Nobumitsu Yamanaka , Akihiko Kasukawa , Ryusuke Nakasaki
发明人： Nariaki Ikeda , Takeharu Yamaguchi , Satoshi Arakawa , Nobumitsu Yamanaka , Akihiko Kasukawa , Ryusuke Nakasaki
IPC分类号： G02F1/017 , H01S5/026 , H01S5/12 , H01S5/22 , H01S5/34 , H01S5/343 , H01L31/00
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/12 , H01S5/2222 , H01S5/2224 , H01S5/2226 , H01S5/3072 , H01S5/3409 , H01S5/34306
摘要： An EA-DFB module including a DFB laser diode and an EA modulator formed on an InP first-conductivity-type substrate has a mesa stripe, a current blocking structure formed on both side surfaces of the mesa strip and a second InP cladding layer formed on top of the mesa stripe and the current blocking structure. The current blocking structure includes a Fe-doped semi-insulating film, a first conductivity-type buried layer and a carrier-depleted layer. The carrier-depleted layer reduces the parasitic capacitance at the boundary between the first-conductivity-type buried layer and the second InP cladding layer.
摘要翻译：包括形成在InP第一导电型基板上的DFB激光二极管和EA调制器的EA-DFB模块具有台面条状，形成在台面条的两侧表面上的电流阻挡结构和形成在第一导电型基板上的第二InP包层台面条纹和当前阻挡结构的顶部。电流阻挡结构包括掺杂Fe的半绝缘膜，第一导电型掩埋层和载流子耗尽层。载流子耗尽层降低了第一导电型掩埋层和第二InP包覆层之间的边界处的寄生电容。

4. 发明授权

US06545296B1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US06545296B1
公开(公告)日：2003-04-08
申请号：US09512245
申请日：2000-02-24
申请人： Toshikazu Mukaihara , Takeharu Yamaguchi , Akihiko Kasukawa
发明人： Toshikazu Mukaihara , Takeharu Yamaguchi , Akihiko Kasukawa
IPC分类号： H01L3300
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/22 , H01S5/34313 , H01S5/34353 , H01S2301/02
摘要： A semiconductor light emitting device including a semiconductor substrate and an active layer having band gap energy smaller than that of the active layer, and the bottom surface of the semiconductor substrate opposite to the active layer is a photo diffused reflection surface having unevenness. The unevenness reduces an amount of reflection rays to enable the stable operation.
摘要翻译：一种半导体发光器件，包括半导体衬底和具有小于活性层的带隙能量的有源层，并且与有源层相对的半导体衬底的底表面是具有不均匀性的光漫反射面。不均匀性减少了反射光线的量以使得稳定的操作。

5. 发明授权

US06737290B2 Surface-emitting semiconductor laser device and method for fabricating the same, and surface-emitting semiconductor laser array employing the laser device 失效
标题翻译：表面发射半导体激光器件及其制造方法以及采用该激光器件的表面发射半导体激光器阵列
公开(公告)号：US06737290B2
公开(公告)日：2004-05-18
申请号：US10223190
申请日：2002-08-16
申请人： Toshikazu Mukaihara , Noriyuki Yokouchi , Akihiko Kasukawa
发明人： Toshikazu Mukaihara , Noriyuki Yokouchi , Akihiko Kasukawa
IPC分类号： H01L2100
CPC分类号： H01S5/18311 , H01S5/209
摘要： A surface-emitting semiconductor laser device having reduced device resistance, a method for fabricating the device and a surface-emitting semiconductor laser array employing the device are provided. The laser device comprises a lower reflector layer structure and an upper reflector layer structure, formed on a p-type semiconductor substrate. An etching blocking layer, a current confinement layer, and an active layer are formed in that order from below between the lower and upper reflector layer structures. The portion over the etching blocking layer is formed into a mesa shape.
摘要翻译：提供具有降低的器件电阻的表面发射半导体激光器器件，制造器件的方法和采用该器件的表面发射半导体激光器阵列。激光装置包括形成在p型半导体衬底上的下反射器层结构和上反射器层结构。在下反射器层结构和上反射器层结构之间从下方依次形成蚀刻阻挡层，电流限制层和有源层。蚀刻阻挡层上的部分形成台面形状。

6. 发明授权

US06810063B1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06810063B1
公开(公告)日：2004-10-26
申请号：US09513702
申请日：2000-02-25
申请人： Toshikazu Mukaihara , Takeharu Yamaguchi , Akihiko Kasukawa
发明人： Toshikazu Mukaihara , Takeharu Yamaguchi , Akihiko Kasukawa
IPC分类号： H01S308
CPC分类号： H01S5/10 , H01S5/0287 , H01S5/1039 , H01S5/2004 , H01S5/323 , H01S5/3235 , H01S5/3428 , H01S2301/16
摘要： A semiconductor laser device according to the present invention comprises a laminated structure of a semiconductor material including an active layer formed of a quantum well structure, a low-reflection film formed on one end face of the structure, and a high-reflection film formed on the other end face of the structure. The cavity length (L) of the device is 1,200 &mgr;m or more. This laser device, which enjoys high kink currents and a satisfactorily linear current-optical output characteristic, is a useful pumping light source for optical fiber amplifier.
摘要翻译：根据本发明的半导体激光器件包括半导体材料的层叠结构，该半导体材料包括由量子阱结构形成的有源层，形成在该结构的一个端面上的低反射膜和形成在该结构的一个端面上的高反射膜结构的另一端面。器件的腔长（L）为1200μm以上。这种具有高扭曲电流和令人满意的线性电流 - 光输出特性的激光装置是用于光纤放大器的有用的泵浦光源。

7. 发明授权

US06472691B2 Distributed feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：US06472691B2
公开(公告)日：2002-10-29
申请号：US09874278
申请日：2001-06-06
申请人： Toshikazu Mukaihara , Hitoshi Shimizu , Masaki Funabashi , Akihiko Kasukawa
发明人： Toshikazu Mukaihara , Hitoshi Shimizu , Masaki Funabashi , Akihiko Kasukawa
IPC分类号： H01L2974
CPC分类号： H01S5/3235 , H01S5/12 , H01S5/1228 , H01S5/1231 , H01S5/32366 , H01S5/32391
摘要： A DFB semiconductor laser device including: a semiconductor substrate; and an active layer and a diffraction grating overlying the semiconductor substrate, the diffraction grating having a composition of GaInNAs(Sb) and absorbing light having a laser emission wavelength of the active layer. The DFB semiconductor laser device having a higher SMSR can be provided which stably operates in a wider range of injection current by proving the diffraction grating formed by the GaInNAs(Sb) having the composition for efficiently absorbing light which has the laser emission wavelength of the active layer.
摘要翻译：一种DFB半导体激光器件，包括：半导体衬底; 以及覆盖半导体衬底的有源层和衍射光栅，所述衍射光栅具有GaInNA（Sb）的组成并吸收具有有源层的激光发射波长的光。可以提供具有更高SMSR的DFB半导体激光器件，其通过证明由具有有效吸收具有激活的激光发射波长的光的组成的GaInNA（Sb）形成的衍射光栅，在更宽的注入电流范围内稳定地操作层。

8. 发明授权

US5914977A Semiconductor laser having a high-reflectivity reflector on the laser facets thereof, an optical integrated device provided with the semiconductor laser, and a manufacturing method therefor 失效
标题翻译：在其激光平面上具有高反射率反射器的半导体激光器，设置有半导体激光器的光学集成器件及其制造方法
公开(公告)号：US5914977A
公开(公告)日：1999-06-22
申请号：US949131
申请日：1997-10-10
申请人： Toshikazu Mukaihara , Akihiko Kasukawa
发明人： Toshikazu Mukaihara , Akihiko Kasukawa
IPC分类号： H01S5/06 , H01S5/026 , H01S5/028 , H01S5/125 , H01S3/19
CPC分类号： H01S5/026 , H01S5/028 , H01S5/0264 , H01S5/0265 , H01S5/125
摘要： A reflection multilayer including low-refraction layers and semiconductor layers is formed on the facets of a semiconductor laser. The bandgap energy (Ewg) of a waveguide layer of the reflection multilayer is greater than the bandgap energy (Eac) of an active layer of the semiconductor laser (Eac Twg). Further, a photodetector and an optical modulator are formed on the semiconductor laser with the reflection multilayer thereon by butt-Jointing or monolithically by selective vapor growth with use of selective growth masks. Relations Ewg>Emod>Eac>Epd and Twg>Tmod>Tac>Tpd are established between the respective bandgap energies and thicknesses of individual layers, whereby the absorption rate of the reflector waveguide layer and diffraction loss are lowered or reduced, and the rates of optical absorption in an optical absorption layer of the photodetector are increased.
摘要翻译：在半导体激光器的面上形成包括低折射层和半导体层的反射层叠体。反射多层膜的波导层的带隙能量（Ewg）大于半导体激光器的有源层的带隙能量（Eac）（Eac Twg）。此外，通过使用选择性生长掩模的选择性气相生长，通过对接或整体地在半导体激光器上形成具有反射多层的光电检测器和光调制器。关系Ewg> Emod> Eac> Epd和Twg> Tmod> Tac> Tpd在各个带隙能量和各层的厚度之间建立，由此降低或降低反射器波导层的吸收率和衍射损耗，光检测器的光吸收层的光吸收增加。

9. 发明授权

US06738405B1 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06738405B1
公开(公告)日：2004-05-18
申请号：US09889596
申请日：2001-07-16
申请人： Takeharu Yamaguchi , Toshikazu Mukaihara , Akihiko Kasukawa
发明人： Takeharu Yamaguchi , Toshikazu Mukaihara , Akihiko Kasukawa
IPC分类号： H01S500
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0211 , H01S5/0212 , H01S5/0421 , H01S5/0425 , H01S5/2022 , H01S5/2216 , H01S5/34313
摘要： A semiconductor laser device (30) includes a layered structure formed on an n-type GaAs substrate (32) having a bandgap energy Eg1 and including an n-type AlGaAs cladding layer (34), an active layer (36) including a quantum-well structure of two layers InGaAs/GaAs having a bandgap energy Eg2 which is smaller than Eg1, a p-type AlGaAs cladding layer (38), and a p-type GaAs cap layer (40), which are consecutively epitaxially grown. The cap layer and the upper portion of the p-type cladding layer are formed as a stripe-shaped mesa structure. An SiN passivation film (42) is formed on the areas except for the top of the cap layer. On the exposed cap layer and the passivation layer a p-side electrode (44) is formed. On the bottom surface of the substrate an n-side electrode (46) including layered metal films of In/AuGe/Ni/Au is formed. An absorption medium layer is interposed between the GaAs substrate and the n-side electrode.
摘要翻译：半导体激光装置（30）包括形成在具有带隙能量Eg1并且包括n型AlGaAs包层（34）的n型GaAs衬底（32）上的分层结构，包括量子阱的有源层（36）具有小于Eg1的带隙能量Eg2，p型AlGaAs覆层（38）和p型GaAs覆盖层（40）的两层InGaAs / GaAs的阱结构，其被连续地外延生长。覆盖层和p型覆层的上部形成为条状台面结构。在除了盖层的顶部之外的区域上形成SiN钝化膜（42）。在露出的盖层和钝化层上形成p侧电极（44）。在基板的底面形成有包含In / AuGe / Ni / Au的层叠金属膜的n侧电极（46）。吸收介质层介于GaAs衬底和n侧电极之间。

10. 发明授权

US5929462A Semiconductor optical device having a strained quantum well structure 失效
标题翻译：具有应变量子阱结构的半导体光学器件
公开(公告)号：US5929462A
公开(公告)日：1999-07-27
申请号：US653755
申请日：1996-05-23
申请人： Akihiko Kasukawa , Michio Ohkubo , Nobumitsu Yamanaka
发明人： Akihiko Kasukawa , Michio Ohkubo , Nobumitsu Yamanaka
IPC分类号： H01L21/20 , H01L29/15 , H01L31/0352 , H01S5/00 , H01S5/34 , H01S5/343 , H01L31/0304 , H01L29/205 , H01L31/036
CPC分类号： B82Y20/00 , H01L29/155 , H01L31/035236 , H01S5/343 , H01S5/3407
摘要： A semiconductor laser has a multiple-quantum well (MQW) structure overlying a first III-V compound semiconductor. The MQW includes a plurality of layer combinations including a strained well layer and a strained barrier layer, which are formed in a cyclic order. An ultra-thin intermediate film made of the first III-V compound semiconductor and having a thickness corresponding to from monoatomic layer to ten atomic layer is interposed between each strained well layer and each strained barrier layer. The intermediate film functions for preventing formation of mixed crystal formed between the well layer and the barrier layer, thereby improving current density threshold and other characteristics of the semiconductor laser.
摘要翻译：半导体激光器具有覆盖第一III-V族化合物半导体的多量子阱（MQW）结构。 MQW包括以循环顺序形成的包括应变阱层和应变势垒层的多个层组合。由第一III-V族化合物半导体制成的具有从单原子层到十原子层的厚度的超薄中间膜介于每个应变阱层和每个应变势垒层之间。中间膜用于防止在阱层和势垒层之间形成的混合晶体的形成，从而提高半导体激光器的电流密度阈值和其他特性。

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