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1. 发明申请

US20100113647A1 FINE PARTICLE DISPERSION AND METHOD FOR PRODUCING FINE PARTICLE DISPERSION 有权
公开(公告)号：US20100113647A1
公开(公告)日：2010-05-06
申请号：US12309738
申请日：2007-07-25
申请人： Takuya Harada , Hidemichi Fujiwara , Kazuhiro Takashiba , Nobumitsu Yamanaka , Yusuke Yamada , Hideo Nishikubo , Takashi Unno
发明人： Takuya Harada , Hidemichi Fujiwara , Kazuhiro Takashiba , Nobumitsu Yamanaka , Yusuke Yamada , Hideo Nishikubo , Takashi Unno
IPC分类号： C08K9/04
CPC分类号： C09D11/36 , B22F1/0022 , B22F2998/10 , B82Y30/00 , C01P2004/64 , C09C1/62 , C09C3/045 , C09C3/10 , C09D11/52 , H05K1/097 , B22F9/24 , B22F1/0062
摘要： Disclosed is a fine particle dispersion which is superior in dispersibility and storage stability. Specifically disclosed is a fine particle dispersion in which a fine particle (P) comprised of one type or not less than two types of a metal, an alloy, and/or a metallic compound, having a mean particle diameter of between 1 nm and 150 nm for primary particles thereof, with being coated at least a part of a surface thereof with a polymer dispersing agent (D), is dispersed in a mixed organic solvent. This fine particle dispersion is characterized in that a weight ratio of (D/P) between the polymer dispersing agent (D) coating the surface of the fine particle (P) and the fine particles (P) in the dispersion is between 0.001 and 10, and the mixed organic solvent is one of: (i) a mixed organic solvent which contains an organic solvent (A) as between 50% and 95% by volume having an amide group, and a low boiling point organic solvent (B) as between 5% and 50% by volume having a boiling point of between 20° C. and 100° C. at a normal pressure; (ii) a mixed organic solvent which contains the organic solvent (A) as between 50% and 95% by volume having the amide group, and an organic solvent (C) as between 5% and 50% by volume having a boiling point of higher than 100° C. at a normal pressure and comprised of an alcohol and/or a polyhydric alcohol having one or not less than two hydroxyl groups in a molecule thereof; or (iii) a mixed organic solvent which contains the organic solvent (A) as between 50% and 94% by volume having the amide group, the low boiling point organic solvent (B) as between 5% and 49% by volume having the boiling point of between 20° C. and 100° C. at the normal pressure, and the organic solvent (C) as between 1% and 45% by volume having the boiling point of higher than 100° C. at the normal pressure and comprised of the alcohol and/or the polyhydric alcohol having the one or not less than the two hydroxyl groups in the molecule thereof.

2. 发明申请

US20090321689A1 METHOD FOR PRODUCING FINE PARTICLE DISPERSION AND FINE PARTICLE DISPERSION 有权
公开(公告)号：US20090321689A1
公开(公告)日：2009-12-31
申请号：US12309739
申请日：2007-07-25
申请人： Takuya Harada , Hidemichi Fujiwara , Kazuhiro Takashiba , Nobumitsu Yamanaka , Yusuke Yamada , Hideo Nishikubo , Takashi Unno
发明人： Takuya Harada , Hidemichi Fujiwara , Kazuhiro Takashiba , Nobumitsu Yamanaka , Yusuke Yamada , Hideo Nishikubo , Takashi Unno
IPC分类号： H01B1/22 , C25B1/00 , C09D11/02 , C09D11/10 , C08L39/06 , C08F8/30 , C09D5/02 , C09D103/00 , C09D101/00 , C09D189/00
CPC分类号： B22F1/0022 , B01F17/0007 , B22F9/24 , B22F2999/00 , B82Y30/00 , C01P2004/64 , C09C1/62 , C09C3/045 , C09C3/10 , C09D11/36 , C09D11/52 , H05K1/097 , Y10T428/252 , B22F2202/11
摘要： Disclosed is a method for producing a fine particle dispersion such as a dispersion of metal fine particles which is superior in dispersibility and storage stability. Specifically disclosed is a method for producing a fine particle dispersion wherein fine particles of a metal or the like, having a mean particle diameter of between 1 nm and 150 nm for primary particles, are dispersed in an organic solvent. This method for producing a fine particle dispersion is characterized by comprising the steps of: reducing a metal ion by liquid phase reduction in an aqueous solution wherein the metal ion and a polymer dispersing agent are dissolved, thereby forming a fine particle dispersion aqueous solution wherein fine particles having a mean particle diameter of between 1 nm and 150 nm for the primary particles and dispersed with being coated by the polymer dispersing agent (Process 1); adding an aggregation accelerator into the fine particle dispersion aqueous solution, the resulting solution is agitated for agglomerating or precipitating the fine particles, and then the agglomerated or precipitated fine particles are separated from the aqueous solution, thereby obtaining fine particles comprised of one type or not less than two types of a metal, an alloy and a metallic compound (Process 2); and re-dispersing the thus-obtained fine particles into an organic solvent or the like which contains an organic solvent (A) as between 25% and 70% by volume having an amide group, a low boiling point organic solvent (B) as between 5% and 25% by volume having a boiling point of between 20° C. and 100° C. at a normal pressure, and an organic solvent (C) as between 5% and 70% by volume having a boiling point of higher than 100° C. at a normal pressure and comprised of an alcohol and/or a polyhydric alcohol having one or not less than two hydroxyl groups in a molecule thereof (Process 3).

3. 发明授权

US06528337B1 Process of producing semiconductor layer structure 有权
标题翻译：制造半导体层结构的工艺
公开(公告)号：US06528337B1
公开(公告)日：2003-03-04
申请号：US09544982
申请日：2000-04-07
申请人： Satoshi Arakawa , Toshikazu Mukaihara , Nobumitsu Yamanaka , Akihiko Kasukawa
发明人： Satoshi Arakawa , Toshikazu Mukaihara , Nobumitsu Yamanaka , Akihiko Kasukawa
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01L33/06 , H01S5/2275 , H01S5/34306 , H01S5/3434 , H01S5/4043 , H01S5/4087
摘要： Disclosed is a process of producing a semiconductor layer structure which emits lights with a plurality of luminescence wavelengths from the same quantum well structure. The layer structure has a layer structure which has the quantum well structure located between a lower light-confinement layer and an upper light-confinement layer. At least a part of the quantum well structure is an area which has a shorter luminescence wavelength than those of the other portions. This area is produced by stacking a lower cladding layer, the lower light-confinement layer, the quantum well structure, the upper light-confinement layer and a first semiconductor layer having a first conductivity type on a semiconductor substrate by epitaxial growth and further stacking a second semiconductor layer having the opposite conductivity type to that of the first semiconductor layer on the entire surface or a partial surface of the first semiconductor layer. This second semiconductor layer may be removed after the formation.
摘要翻译：公开了一种从相同的量子阱结构产生发射具有多个发光波长的光的半导体层结构的方法。层结构具有层结构，其具有位于下限光层和上光限制层之间的量子阱结构。量子阱结构的至少一部分是具有比其它部分更短的发光波长的区域。该区域是通过外延生长在半导体衬底上堆叠下包层，下光限制层，量子阱结构，上光限制层和具有第一导电类型的第一半导体层，并进一步堆叠第二半导体层与第一半导体层的整个表面或第一半导体层的部分表面具有相反的导电类型。该第二半导体层可以在形成之后被去除。

4. 发明申请

US20140127409A1 METHOD FOR PRODUCING FINE PARTICLE DISPERSION 审中-公开
标题翻译：生产细颗粒分散体的方法
公开(公告)号：US20140127409A1
公开(公告)日：2014-05-08
申请号：US13669695
申请日：2012-11-06
申请人： Takuya HARADA , Hidemichi FUJIWARA , Kazuhiro TAKASHIBA , Nobumitsu YAMANAKA , Yusuke YAMADA , Hideo NISHIKUBO , Takashi UNNO
发明人： Takuya HARADA , Hidemichi FUJIWARA , Kazuhiro TAKASHIBA , Nobumitsu YAMANAKA , Yusuke YAMADA , Hideo NISHIKUBO , Takashi UNNO
IPC分类号： H01B1/02
CPC分类号： H01B1/22 , B82Y30/00 , Y10S977/773 , Y10S977/81
摘要： In a fine particle dispersion, a fine particle (P) is dispersed in a mixed organic solvent. The fine particle (P) is formed of one type or not less than two types of a metal, an alloy, and/or a metallic compound, and has a mean particle diameter between 1 nm and 150 nm for primary particles thereof. Further, the fine particle (P) has a surface at least a part thereof coated with a polymer dispersing agent (D).
摘要翻译：在细颗粒分散体中，将微粒（P）分散在混合有机溶剂中。细颗粒（P）由一种或不少于两种类型的金属，合金和/或金属化合物形成，并且其一次颗粒的平均粒径为1nm至150nm。此外，微粒（P）的至少一部分表面涂布有高分子分散剂（D）。

5. 发明授权

US08277693B2 Method for producing fine particle dispersion and fine particle dispersion 有权
标题翻译：微粒分散体和细粒分散体的制造方法
公开(公告)号：US08277693B2
公开(公告)日：2012-10-02
申请号：US12309739
申请日：2007-07-25
申请人： Takuya Harada , Hidemichi Fujiwara , Kazuhiro Takashiba , Nobumitsu Yamanaka , Yusuke Yamada , Hideo Nishikubo , Takashi Unno
发明人： Takuya Harada , Hidemichi Fujiwara , Kazuhiro Takashiba , Nobumitsu Yamanaka , Yusuke Yamada , Hideo Nishikubo , Takashi Unno
IPC分类号： H01B1/02 , H01B1/12
CPC分类号： B22F1/0022 , B01F17/0007 , B22F9/24 , B22F2999/00 , B82Y30/00 , C01P2004/64 , C09C1/62 , C09C3/045 , C09C3/10 , C09D11/36 , C09D11/52 , H05K1/097 , Y10T428/252 , B22F2202/11
摘要： A method for producing a fine particle dispersion includes the steps of reducing a metal ion to form a fine particle dispersion aqueous solution; adding an aggregation accelerator into the fine particle dispersion aqueous solution so that agglomerated or precipitated fine particles are separated to obtain fine particles; and re-dispersing the fine particles into an organic solvent containing an organic solvent having an amide group, a low boiling point organic solvent having a boiling point between 20° C. and 100° C. at a normal pressure, and an organic solvent having a boiling point higher than 100° C. at a normal pressure and containing an alcohol and/or a polyhydric alcohol.
摘要翻译：微粒分散体的制造方法包括：还原金属离子以形成微粒分散水溶液的步骤; 在细颗粒分散水溶液中加入聚集促进剂，使分散或沉淀的微粒分离，得到细颗粒; 并将细颗粒再分散到含有具有酰胺基的有机溶剂的有机溶剂中，在常压下具有沸点在20℃和100℃之间的低沸点有机溶剂，以及具有在常压下高于100℃的沸点并含有醇和/或多元醇。

6. 发明授权

US06911713B2 Optical device having a carrier-depleted layer 失效
标题翻译：具有载流子耗尽层的光学器件
公开(公告)号：US06911713B2
公开(公告)日：2005-06-28
申请号：US10617661
申请日：2003-07-14
申请人： Nariaki Ikeda , Takeharu Yamaguchi , Satoshi Arakawa , Nobumitsu Yamanaka , Akihiko Kasukawa , Ryusuke Nakasaki
发明人： Nariaki Ikeda , Takeharu Yamaguchi , Satoshi Arakawa , Nobumitsu Yamanaka , Akihiko Kasukawa , Ryusuke Nakasaki
IPC分类号： G02F1/017 , H01S5/026 , H01S5/12 , H01S5/22 , H01S5/34 , H01S5/343 , H01L31/00
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/12 , H01S5/2222 , H01S5/2224 , H01S5/2226 , H01S5/3072 , H01S5/3409 , H01S5/34306
摘要： An EA-DFB module including a DFB laser diode and an EA modulator formed on an InP first-conductivity-type substrate has a mesa stripe, a current blocking structure formed on both side surfaces of the mesa strip and a second InP cladding layer formed on top of the mesa stripe and the current blocking structure. The current blocking structure includes a Fe-doped semi-insulating film, a first conductivity-type buried layer and a carrier-depleted layer. The carrier-depleted layer reduces the parasitic capacitance at the boundary between the first-conductivity-type buried layer and the second InP cladding layer.
摘要翻译：包括形成在InP第一导电型基板上的DFB激光二极管和EA调制器的EA-DFB模块具有台面条状，形成在台面条的两侧表面上的电流阻挡结构和形成在第一导电型基板上的第二InP包层台面条纹和当前阻挡结构的顶部。电流阻挡结构包括掺杂Fe的半绝缘膜，第一导电型掩埋层和载流子耗尽层。载流子耗尽层降低了第一导电型掩埋层和第二InP包覆层之间的边界处的寄生电容。

7. 发明授权

US5666375A Semiconductor quantum well laser having a low threshold current density 失效
标题翻译：具有低阈值电流密度的半导体量子阱激光器
公开(公告)号：US5666375A
公开(公告)日：1997-09-09
申请号：US555472
申请日：1995-11-08
申请人： Noriyuki Yokouchi , Nobumitsu Yamanaka , Akihiko Kasukawa
发明人： Noriyuki Yokouchi , Nobumitsu Yamanaka , Akihiko Kasukawa
IPC分类号： H01C3/18 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/3434 , H01S5/3409 , H01S5/34306
摘要： The present invention gives rise to a 1.3 .mu.m tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 .mu.m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm.sup.2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.
摘要翻译：本发明产生了具有量子阱活性层的1.3μm拉伸应变量子阱激光器，该量子阱活性层可以在结构上被定义为In1-xGaxAsyP1-y，X在0.42和0.55之间，Y在0.8和0.75之间。 InGaAsP有源层需要具有1.0至1.5％的拉伸应力，并且可以在InP和GaAs之间没有任何实质相分离的情况下制造。 1.3μm拉伸应变量子阱激光器的阈值电流密度极小，小于0.2kA / cm2。优选的拉伸应变范围在1.2至1.4％之间或其附近。

8. 发明授权

US08337726B2 Fine particle dispersion and method for producing fine particle dispersion 有权
标题翻译：细颗粒分散体和微粒分散体的制造方法
公开(公告)号：US08337726B2
公开(公告)日：2012-12-25
申请号：US12309738
申请日：2007-07-25
申请人： Takuya Harada , Hidemichi Fujiwara , Kazuhiro Takashiba , Nobumitsu Yamanaka , Yusuke Yamada , Hideo Nishikubo , Takashi Unno
发明人： Takuya Harada , Hidemichi Fujiwara , Kazuhiro Takashiba , Nobumitsu Yamanaka , Yusuke Yamada , Hideo Nishikubo , Takashi Unno
IPC分类号： H01B1/24 , H01B1/02
CPC分类号： C09D11/36 , B22F1/0022 , B22F2998/10 , B82Y30/00 , C01P2004/64 , C09C1/62 , C09C3/045 , C09C3/10 , C09D11/52 , H05K1/097 , B22F9/24 , B22F1/0062
摘要： In a fine particle dispersion, a fine particle (P) is dispersed in a mixed organic solvent. The fine particle (P) is formed of one type or not less than two types of a metal, an alloy, and/or a metallic compound, and has a mean particle diameter between 1 nm and 150 nm for primary particles thereof. Further, the fine particle (P) has a surface at least a part thereof coated with a polymer dispersing agent (D).
摘要翻译：在细颗粒分散体中，将微粒（P）分散在混合有机溶剂中。细颗粒（P）由一种或不少于两种类型的金属，合金和/或金属化合物形成，并且其一次颗粒的平均粒径为1nm至150nm。此外，微粒（P）的至少一部分表面涂布有高分子分散剂（D）。

9. 发明授权

US5929462A Semiconductor optical device having a strained quantum well structure 失效
标题翻译：具有应变量子阱结构的半导体光学器件
公开(公告)号：US5929462A
公开(公告)日：1999-07-27
申请号：US653755
申请日：1996-05-23
申请人： Akihiko Kasukawa , Michio Ohkubo , Nobumitsu Yamanaka
发明人： Akihiko Kasukawa , Michio Ohkubo , Nobumitsu Yamanaka
IPC分类号： H01L21/20 , H01L29/15 , H01L31/0352 , H01S5/00 , H01S5/34 , H01S5/343 , H01L31/0304 , H01L29/205 , H01L31/036
CPC分类号： B82Y20/00 , H01L29/155 , H01L31/035236 , H01S5/343 , H01S5/3407
摘要： A semiconductor laser has a multiple-quantum well (MQW) structure overlying a first III-V compound semiconductor. The MQW includes a plurality of layer combinations including a strained well layer and a strained barrier layer, which are formed in a cyclic order. An ultra-thin intermediate film made of the first III-V compound semiconductor and having a thickness corresponding to from monoatomic layer to ten atomic layer is interposed between each strained well layer and each strained barrier layer. The intermediate film functions for preventing formation of mixed crystal formed between the well layer and the barrier layer, thereby improving current density threshold and other characteristics of the semiconductor laser.
摘要翻译：半导体激光器具有覆盖第一III-V族化合物半导体的多量子阱（MQW）结构。 MQW包括以循环顺序形成的包括应变阱层和应变势垒层的多个层组合。由第一III-V族化合物半导体制成的具有从单原子层到十原子层的厚度的超薄中间膜介于每个应变阱层和每个应变势垒层之间。中间膜用于防止在阱层和势垒层之间形成的混合晶体的形成，从而提高半导体激光器的电流密度阈值和其他特性。

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