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1. 发明公开

US20240243554A1 LIGHT SOURCE USING EPITAXIAL GROWTH AND METHOD OF MANUFACTURING THE LIGHT SOURCE 审中-公开
公开(公告)号：US20240243554A1
公开(公告)日：2024-07-18
申请号：US18376661
申请日：2023-10-04
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Eunsung LEE , Junhee Choi , Kiho Kong , Joohun Han
IPC分类号： H01S5/323 , H01S5/028 , H01S5/40
CPC分类号： H01S5/323 , H01S5/0282 , H01S5/4087
摘要： Provided is a light source including a plurality of support layers spaced apart from each other, an ionic crystalline layer on each of the plurality of support layers, a two-dimensional (2D) material layer on the ionic crystalline layer, and a light-emitting device including a first clad layer on the 2D material layer, a width of the first clad layer being greater than a width of the 2D material layer in a horizontal direction, an active layer on the first clad layer, and a second clad layer on the active layer and doped as a second conductive type electrically opposite to a first conductive type.

2. 发明授权

US11658465B1 Mobile device including laser-pumped phosphor light source 有权
公开(公告)号：US11658465B1
公开(公告)日：2023-05-23
申请号：US16908339
申请日：2020-06-22
申请人： Apple Inc.
发明人： Angelo M. Alaimo , Richard L. Baer , Garam Young , Florian R. Fournier , Blake M. Coughenour , Bryan Dang
IPC分类号： H01S5/323 , H01S5/00 , H04N23/56 , H04N23/74
CPC分类号： H01S5/323 , H01S5/0087 , H04N23/56 , H04N23/74
摘要： A mobile device includes a camera and a light source module embedded in the mobile device. The light source module includes at least a laser-pumped phosphor light source that includes a photoluminescent phosphor and a laser diode to generate laser light within a first wavelength range to pump the photoluminescent phosphor. Exposure of the photoluminescent phosphor to the laser light results in emission of visible light within a second wavelength range according to a laser-pumped emission spectrum associated with the photoluminescent phosphor.

3. 发明申请

US20190013649A1 SEMICONDUCTOR LASER 审中-公开
公开(公告)号：US20190013649A1
公开(公告)日：2019-01-10
申请号：US15752442
申请日：2016-09-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： Clemens Vierheilig , Andreas Löffler
IPC分类号： H01S5/323 , H01S5/028 , H01S5/10 , H01S5/22
CPC分类号： H01S5/323 , H01S5/028 , H01S5/0281 , H01S5/0425 , H01S5/1082 , H01S5/16 , H01S5/162 , H01S5/166 , H01S5/22 , H01S5/221
摘要： A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.

4. 发明申请

US20180259708A1 Method for Producing Semiconductor Device 审中-公开
公开(公告)号：US20180259708A1
公开(公告)日：2018-09-13
申请号：US15975496
申请日：2018-05-09
申请人： Huawei Technologies Co., Ltd.
发明人： Yourui Huangfu
IPC分类号： G02B6/122 , H01L21/02 , G02B6/13
CPC分类号： G02B6/122 , G02B6/13 , G02B2006/12123 , H01L21/02381 , H01L21/02488 , H01L21/02494 , H01L21/02538 , H01L21/02636 , H01L21/02639 , H01L21/0273 , H01L21/308 , H01L21/31144 , H01L21/7624 , H01L29/20 , H01L29/78 , H01L31/02325 , H01L31/1035 , H01L33/00 , H01S5/00 , H01S5/021 , H01S5/0218 , H01S5/02296 , H01S5/026 , H01S5/3013 , H01S5/323
摘要： A semiconductor device and a method for producing a semiconductor device are disclosed. The semiconductor device includes a first silicon layer; a first dielectric layer, located on the first silicon layer, where the first dielectric layer includes a window, and a bottom horizontal size of the window of the first dielectric layer is not greater than 20 nm; and a III-V semiconductor layer, located on the first dielectric layer and in the window of the first dielectric layer, and connected to the first silicon layer in the window of the first dielectric layer. A III-V semiconductor material of the semiconductor device has no threading dislocations, and therefore has relatively high performance.

5. 发明申请

US20180131161A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 审中-公开
公开(公告)号：US20180131161A1
公开(公告)日：2018-05-10
申请号：US15865447
申请日：2018-01-09
申请人： Panasonic Corporation
发明人： MASAO KAWAGUCHI , Osamu Imafuji , Shinichiro Nozaki , Hiroyuki Hagino
IPC分类号： H01S5/20 , H01S5/026 , H01S5/22 , H01S5/343 , H01S5/323
CPC分类号： H01S5/2009 , H01S5/02276 , H01S5/026 , H01S5/22 , H01S5/323 , H01S5/343 , H01S5/34333
摘要： A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1−xN containing no Indium, where 0 ≤x

6. 发明申请

US20180006432A1 LIGHT-EMITTING COMPONENT AND LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20180006432A1
公开(公告)日：2018-01-04
申请号：US15625202
申请日：2017-06-16
申请人： FUJI XEROX Co., Ltd.
发明人： Takashi KONDO
IPC分类号： H01S5/042 , F21V23/00 , H01S5/40 , H01S5/30 , F21Y2115/30
CPC分类号： H01S5/06817 , H01L33/00 , H01S5/02276 , H01S5/0261 , H01S5/042 , H01S5/0428 , H01S5/06216 , H01S5/06226 , H01S5/068 , H01S5/06825 , H01S5/183 , H01S5/18313 , H01S5/2232 , H01S5/3013 , H01S5/3095 , H01S5/32 , H01S5/323 , H01S5/4025 , H01S5/4031 , H01S5/42 , H01S5/423
摘要： A light-emitting component includes laser elements and a setting unit. Each laser element is set to be in an on state with a logical value “m (m represents an integer of 1 or more)”, an on state considered as having a logical value “0”, or an off state. The setting unit sets the laser element to be in a state ready to transition to an on state and sets the laser element in the state ready to transition to the on state to be in the on state considered as having a logical value “0” before a timing of setting the laser element to the on state with a logical value “m”.

7. 发明授权

US09859983B2 External cavity laser based wavelength division multiplexing superchannel transceivers 有权
公开(公告)号：US09859983B2
公开(公告)日：2018-01-02
申请号：US15285123
申请日：2016-10-04
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Jason S. Orcutt
IPC分类号： H04B10/50 , G02B6/293 , H04J14/06 , H01S5/323 , H04B10/80 , G02B6/27 , H01S5/062 , H01S5/068 , G02B6/12 , H01S5/0687 , H04B10/516 , H01S5/30 , H04J14/02 , H01S5/14 , H01S5/10 , H01S3/23 , G02B6/126 , H01S5/02 , H01S5/028 , H01S5/04 , H01S5/40
CPC分类号： H04B10/503 , G02B6/00 , G02B6/12004 , G02B6/126 , G02B6/2773 , G02B6/29382 , G02B2006/12164 , H01S3/2391 , H01S5/021 , H01S5/0287 , H01S5/041 , H01S5/06246 , H01S5/06821 , H01S5/0687 , H01S5/1028 , H01S5/14 , H01S5/141 , H01S5/142 , H01S5/146 , H01S5/3013 , H01S5/323 , H01S5/4031 , H01S2301/163 , H04B10/5053 , H04B10/506 , H04B10/516 , H04B10/801 , H04J14/02 , H04J14/06
摘要： A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer.

8. 发明申请

US20170264080A1 Laser Diode Assembly 有权
公开(公告)号：US20170264080A1
公开(公告)日：2017-09-14
申请号：US15606500
申请日：2017-05-26
申请人： OSRAM OPTO SEMICONDUCTOR GMBH
发明人： Alfred LELL , Martin STARSSBURG
IPC分类号： H01S5/40 , H01S5/026 , H01S5/30 , H01S5/323 , H01S5/343 , H01S5/022 , H01S5/042 , H01S5/20
CPC分类号： H01S5/4043 , H01S5/0224 , H01S5/026 , H01S5/0425 , H01S5/2059 , H01S5/3013 , H01S5/3095 , H01S5/323 , H01S5/32341 , H01S5/34313 , H01S5/405 , H01S5/4087 , H01S5/4093 , H01S2301/173
摘要： A laser diode arrangement comprising: at least one semiconductor substrate; at least two laser stacks based on the AlInGaN material system, each laser stack having an active zone, wherein at least one of the at least two laser stacks comprises a two-dimensional structure of laser diodes; and at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

9. 发明授权

US09559494B2 Edge emitting semiconductor laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US09559494B2
公开(公告)日：2017-01-31
申请号：US14805808
申请日：2015-07-22
申请人： OSRAM Opto Semiconductors GmbH
发明人： Christian Lauer , Alvaro Gomez-Iglesias
IPC分类号： H01S5/20 , H01S5/10 , H01S5/042 , H01S5/065 , H01S5/40 , H01S5/32
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.
摘要翻译：边缘发射半导体激光器包括：半导体本体，其包括波导区域，波导区域包括第一和第二波导层以及布置在第一和第二波导层之间的有源层，其产生激光辐射; 波导区域布置在布置在波导区域下游的第一和第二覆层之间; 用于选择由有源层发射的激光辐射的横向模式的相位结构，其中所述相位结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口; 至少一个第一中间层，由与第二包覆层嵌入的第二包覆层不同的半导体材料构成; 并且所述切口至少部分地从所述顶侧延伸到所述第一中间层中; 第二包层包含邻接波导区域的第一部分层。

10. 发明申请

US20160329684A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20160329684A1
公开(公告)日：2016-11-10
申请号：US15070669
申请日：2016-03-15
申请人： Mitsubishi Electric Corporation
发明人： Hitoshi SAKUMA
IPC分类号： H01S5/227 , H01S5/02
CPC分类号： H01S5/2275 , H01S5/0201 , H01S5/2222 , H01S5/323 , H01S2301/176
摘要： A method of manufacturing a semiconductor device, includes a step of forming, on a semiconductor substrate, a mesa stripe including an active layer, and a semiconductor layer covering the mesa stripe, a masking step of forming, on the semiconductor layer, a mask pattern through which the semiconductor layer is exposed on opposite sides of the mesa stripe, an isotropic etching step of performing isotropic etching on the semiconductor layer exposed through the mask pattern so that concaves having a circular-arc sectional shape are formed in the semiconductor layer, and an anisotropic etching step of performing anisotropic etching on the semiconductor layer through the mask pattern after the isotropic etching step so that etching progresses to the semiconductor substrate.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成包括有源层的台面条和覆盖台面条的半导体层的步骤，在半导体层上形成掩模图案的掩模步骤半导体层通过其暴露在台面条的相对侧上，各向同性蚀刻步骤对通过掩模图案曝光的半导体层进行各向同性蚀刻，使得在半导体层中形成具有圆弧截面形状的凹部，以及各向异性蚀刻步骤，在各向同性蚀刻步骤之后通过掩模图案在半导体层上进行各向异性蚀刻，以使蚀刻进行到半导体衬底。

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