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1. 发明授权

US06416927B1 Chemically amplified resist compositions 有权
标题翻译：化学扩增抗蚀剂组合物
公开(公告)号：US06416927B1
公开(公告)日：2002-07-09
申请号：US09675500
申请日：2000-09-29
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： G03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

2. 发明授权

US06171754B2 Chemically amplified resist compositions 失效
标题翻译：化学扩增抗蚀剂组合物
公开(公告)号：US06171754B2
公开(公告)日：2001-01-09
申请号：US09124597
申请日：1998-07-29
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： B03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

3. 发明授权

US6103845A Chemically amplified resist polymers 失效
标题翻译：化学扩增抗蚀剂聚合物
公开(公告)号：US6103845A
公开(公告)日：2000-08-15
申请号：US805212
申请日：1997-02-27
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： C08F220/12 , C08F220/18 , C08F220/28 , C08F222/06 , C08F232/08 , C08G61/08 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: ##STR1## wherein R.sub.3 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.4 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.5 is selected from the group consisting of hydrogen and methyl; R.sub.6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

4. 发明授权

US06713229B2 Terpolymer for amplified resist 失效
标题翻译：扩增抗蚀剂的三元共聚物
公开(公告)号：US06713229B2
公开(公告)日：2004-03-30
申请号：US10153474
申请日：2002-05-21
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： G03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

5. 发明授权

US5851727A Photosensitive polymers and photoresist compositions containing the same 失效
标题翻译：含有它们的光敏聚合物和光致抗蚀剂组合物
公开(公告)号：US5851727A
公开(公告)日：1998-12-22
申请号：US866807
申请日：1997-05-30
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： C07C69/00 , C08F220/26 , C08F220/30 , G03F7/004 , G03F7/033 , G03F7/039 , H01L21/027
CPC分类号： C07C69/00 , C08F220/30 , G03F7/0045 , C07C2103/00 , Y10S430/111
摘要： Photosensitive polymers are represented by the formula: ##STR1## wherein R1 is selected from the group consisting of hydrogen and methyl; R2 is selected from the group consisting of aliphatic hydrocarbon groups having from 6 to 20 carbon atoms; R3 is selected from the group consisting of a t-butyl group and a tetrahydropyranyl group, and m and n are selected such that the ratio m/(n+m) ranges from 0.1 to 0.9. Photoresist compositions comprise the photosensitive polymers and photoacid generators.
摘要翻译：光敏聚合物由下式表示：其中R 1选自氢和甲基; R2选自具有6至20个碳原子的脂族烃基; R3选自叔丁基和四氢吡喃基，并且选择m和n使得m /（n + m）的比例为0.1至0.9。光致抗蚀剂组合物包含光敏聚合物和光致酸产生剂。

6. 发明授权

US6043206A Solutions for cleaning integrated circuit substrates 有权
标题翻译：集成电路基板清洗方案
公开(公告)号：US6043206A
公开(公告)日：2000-03-28
申请号：US211673
申请日：1998-12-14
申请人： Jae-inh Song , Moon-hee Lee , Heung-soo Park , Young-bum Koh
发明人： Jae-inh Song , Moon-hee Lee , Heung-soo Park , Young-bum Koh
IPC分类号： C11D3/02 , C11D11/00 , H01L21/306 , C11D3/06 , B08B3/08 , C23G1/02
CPC分类号： C11D11/0047 , C11D3/042 , H01L21/02063
摘要： Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboric acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboric acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.
摘要翻译：用于从集成电路基板去除污染物的清洁溶液包括氟硼酸和磷酸。从集成电路基板去除污染物的方法包括使基板与包含氟硼酸和磷酸的清洁溶液接触。然后将集成电路基板与水溶液接触。

7. 发明授权

US06277204B1 Methods for cleaning wafers used in integrated circuit devices 有权
标题翻译：用于清洁集成电路器件中使用的晶片的方法
公开(公告)号：US06277204B1
公开(公告)日：2001-08-21
申请号：US09593344
申请日：2000-06-14
申请人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
发明人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
IPC分类号： B08B302
CPC分类号： H01L21/67028 , B08B3/04 , B08B7/00 , Y10S134/902
摘要： Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.
摘要翻译：用于清洁集成电路装置中使用的晶片的装置包括：（1）包括惰性气体储存浴，氟化氢气体储存浴和含有选自水蒸气，醇蒸汽，及其混合物和气体混合器，其中惰性气体储存浴，氟化氢气体储存浴和蒸气储存浴与气体混合器连通; （2）一种湿清洗部，包括用于储存氟化物的第一浴; 用于储存液体酒精的第二浴; 以及与所述第一浴和第二浴连通的清洗溶液储存浴，其中所述氟化物和所述液态醇形成储存在所述清洗溶液储存浴中的清洗溶液; 和（3）定位在干洗部分和湿清洗部分之间并与干洗部分和湿清洁部分连通的公共清洁浴池。

8. 发明授权

US5789360A Cleaning solution for use on a semiconductor wafer following chemical-mechanical polishing of the wafer and method for using same 失效
标题翻译：在晶片的化学机械抛光之后在半导体晶片上使用的清洁溶液及其使用方法
公开(公告)号：US5789360A
公开(公告)日：1998-08-04
申请号：US778135
申请日：1997-01-02
申请人： Jae-inh Song , Young-jun Cho , Heung-soo Park , Young-bum Koh
发明人： Jae-inh Song , Young-jun Cho , Heung-soo Park , Young-bum Koh
IPC分类号： H01L21/304 , B24B55/00 , C11D3/02 , C11D3/04 , C11D3/06 , C11D11/00 , H01L21/02 , H01L21/321 , H01L21/768 , B08B3/08 , C23G1/02
CPC分类号： H01L21/02074 , C11D11/0047 , C11D3/042
摘要： A solution and method for cleaning a silicon wafer following a chemical-mechanical polishing process is disclosed. The cleaning solution being 0.1% to 99% by total solution volume of phosphoric acid, 0.1% to 25% by total solution volume of fluoroboric acid, and the balance of the solution, deionized water.
摘要翻译：公开了一种在化学机械抛光工艺之后清洗硅晶片的方法和方法。清洗液的总溶液体积为0.1〜99％，氟硼酸的总溶液体积为0.1〜25％，其余为去离子水。

9. 发明授权

US6092539A In-situ cleaning apparatuses for wafers used in integrated circuit devices and methods of cleaning using the same 失效
标题翻译：用于集成电路器件的晶片的原位清洁装置及使用其的清洁方法
公开(公告)号：US6092539A
公开(公告)日：2000-07-25
申请号：US44279
申请日：1998-03-19
申请人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
发明人： Kyu-hwan Chang , Jae-inh Song , Heung-soo Park , Young-bum Koh
IPC分类号： H01L21/304 , B08B3/04 , B08B7/00 , H01L21/00 , B08B3/10
CPC分类号： H01L21/67028 , B08B3/04 , B08B7/00 , Y10S134/902
摘要： Apparatuses for cleaning wafers used in integrated circuit devices comprise: (1) a dry cleaning section comprising inert gas storage bath, a hydrogen fluoride gas storage bath, and a vapor storage bath containing a component selected from the group consisting of water vapor, alcohol vapor, and mixtures thereof and a gas mixer, wherein the inert gas storage bath, the hydrogen fluoride gas storage bath, and the vapor storage bath are in communication with the gas mixer; (2) a wet cleaning section comprising a first bath for storing a fluoride; a second bath for storing a liquid alcohol; and a cleaning solution storage bath in communication with the first bath and second bath, wherein the fluoride and the liquid alcohol form a cleaning solution which is stored in the cleaning solution storage bath; and (3) a common cleaning bath positioned between and in communication with the dry cleaning section and the wet cleaning section.
摘要翻译：用于清洁集成电路装置中使用的晶片的装置包括：（1）包括惰性气体储存浴，氟化氢气体储存浴和含有选自水蒸气，醇蒸汽，及其混合物和气体混合器，其中惰性气体储存浴，氟化氢气体储存浴和蒸气储存浴与气体混合器连通; （2）一种湿清洗部，包括用于储存氟化物的第一浴; 用于储存液体酒精的第二浴; 以及与所述第一浴和第二浴连通的清洗溶液储存浴，其中所述氟化物和所述液态醇形成储存在所述清洗溶液储存浴中的清洗溶液; 和（3）定位在干洗部分和湿清洗部分之间并与干洗部分和湿清洁部分连通的公共清洁浴池。

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