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1. 发明授权

US06416927B1 Chemically amplified resist compositions 有权
标题翻译：化学扩增抗蚀剂组合物
公开(公告)号：US06416927B1
公开(公告)日：2002-07-09
申请号：US09675500
申请日：2000-09-29
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： G03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

2. 发明授权

US06171754B2 Chemically amplified resist compositions 失效
标题翻译：化学扩增抗蚀剂组合物
公开(公告)号：US06171754B2
公开(公告)日：2001-01-09
申请号：US09124597
申请日：1998-07-29
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： B03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

3. 发明授权

US06713229B2 Terpolymer for amplified resist 失效
标题翻译：扩增抗蚀剂的三元共聚物
公开(公告)号：US06713229B2
公开(公告)日：2004-03-30
申请号：US10153474
申请日：2002-05-21
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： G03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

4. 发明授权

US5851727A Photosensitive polymers and photoresist compositions containing the same 失效
标题翻译：含有它们的光敏聚合物和光致抗蚀剂组合物
公开(公告)号：US5851727A
公开(公告)日：1998-12-22
申请号：US866807
申请日：1997-05-30
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： C07C69/00 , C08F220/26 , C08F220/30 , G03F7/004 , G03F7/033 , G03F7/039 , H01L21/027
CPC分类号： C07C69/00 , C08F220/30 , G03F7/0045 , C07C2103/00 , Y10S430/111
摘要： Photosensitive polymers are represented by the formula: ##STR1## wherein R1 is selected from the group consisting of hydrogen and methyl; R2 is selected from the group consisting of aliphatic hydrocarbon groups having from 6 to 20 carbon atoms; R3 is selected from the group consisting of a t-butyl group and a tetrahydropyranyl group, and m and n are selected such that the ratio m/(n+m) ranges from 0.1 to 0.9. Photoresist compositions comprise the photosensitive polymers and photoacid generators.
摘要翻译：光敏聚合物由下式表示：其中R 1选自氢和甲基; R2选自具有6至20个碳原子的脂族烃基; R3选自叔丁基和四氢吡喃基，并且选择m和n使得m /（n + m）的比例为0.1至0.9。光致抗蚀剂组合物包含光敏聚合物和光致酸产生剂。

5. 发明授权

US6103845A Chemically amplified resist polymers 失效
标题翻译：化学扩增抗蚀剂聚合物
公开(公告)号：US6103845A
公开(公告)日：2000-08-15
申请号：US805212
申请日：1997-02-27
申请人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
发明人： Sang-jun Choi , Chun-geun Park , Young-bum Koh
IPC分类号： C08F220/12 , C08F220/18 , C08F220/28 , C08F222/06 , C08F232/08 , C08G61/08 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: ##STR1## wherein R.sub.3 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.4 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.5 is selected from the group consisting of hydrogen and methyl; R.sub.6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三聚体用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R4选自氢和C1至C10脂族烃，其中脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; m和n分别为整数; 并且其中n /（m + n）为约0.1至约0.5。

6. 发明授权

US5856411A Resins for use in chemically amplified resists and manufacturing methods thereof 失效
标题翻译：用于化学增幅抗蚀剂的树脂及其制造方法
公开(公告)号：US5856411A
公开(公告)日：1999-01-05
申请号：US665231
申请日：1996-06-17
申请人： Sang-jun Choi , Chun-geun Park
发明人： Sang-jun Choi , Chun-geun Park
IPC分类号： G03F7/039 , C08F4/04 , C08F12/06 , C08F12/08 , C08F212/00 , G03F7/032 , C08C19/22 , C08F12/24
CPC分类号： C08F12/06
摘要： Resins for use in chemically amplified resists are represented by the general formula (I): ##STR1## wherein R.sub.1 is t-butyl or tetrahydropyranyl; R.sub.2 is hydrogen or methyl; n and m are integers; and the ratio n/((m+n) ranges from 0.1 to 0.9. Methods for manufacturing the resins comprise reacting a monomer represented by the formula (II): ##STR2## with a monomer represented by the formula (III): ##STR3## to form a copolymer represented by the formula (IV): ##STR4## wherein R.sub.1 and R.sub.2 are defined as above; and hydrolyzing acetoxy groups contained in the copolymer represented by the formula (IV) to form the resin compositions.
摘要翻译：用于化学放大抗蚀剂的树脂由通式（I）表示：其中R 1是叔丁基或四氢吡喃基; R2是氢或甲基; n和m是整数; 并且n /（（m + n）的比率为0.1〜0.9。制造树脂的方法包括使由式（II）表示的单体：＆lt; IMAGE＆gt;与由式（III）表示的单体反应：＆lt; IMAGE 以形成由式（IV）表示的共聚物：其中R1和R2如上定义;和水解由式（IV）表示的共聚物中所含的乙酰氧基以形成树脂组合物。

7. 发明授权

US5981141A Chemically amplified resists 失效
公开(公告)号：US5981141A
公开(公告)日：1999-11-09
申请号：US942249
申请日：1997-10-01
申请人： Sang-jun Choi , Chun-geun Park , Hai-won Lee
发明人： Sang-jun Choi , Chun-geun Park , Hai-won Lee
IPC分类号： G03F7/004 , C08F30/08 , C08L43/04 , G03F7/039 , G03F7/075 , G03C1/72
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： In general, the invention provides polymers which may be used in chemically amplified resists. More particularly, the invention relates to esterified polymers containing the group: ##STR1## Resist compositions comprise the esterified polymers and photoacid generators.

8. 发明授权

US5847063A Resins for use in chemically amplified resists and manufacturing methods thereof 失效
公开(公告)号：US5847063A
公开(公告)日：1998-12-08
申请号：US843446
申请日：1997-04-16
申请人： Sang-jun Choi , Chun-geun Park
发明人： Sang-jun Choi , Chun-geun Park
IPC分类号： G03F7/039 , C08F4/04 , C08F12/06 , C08F12/08 , C08F212/00 , G03F7/032 , C08F20/10
CPC分类号： C08F12/06
摘要： Resins for use in chemically amplified resists are represented by the general formula (I): ##STR1## wherein R.sub.1 is t-butyl or tetrahydropyranyl; R.sub.2 is hydrogen or methyl; n and m are integers; and the ratio n/((m+n) ranges from 0.1 to 0.9. Methods for manufacturing the resins comprise reacting a monomer represented by the formula (II): ##STR2## with a monomer represented by the formula (III): ##STR3## to form a copolymer represented by the formula (IV): ##STR4## wherein R.sub.1 and R.sub.2 are defined as above; and hydrolyzing acetoxy groups contained in the copolymer represented by the formula (IV) to form the resin compositions.

9. 发明授权

US5733704A Resist compositions for chemically amplified resists comprising a di(t-butyl)malonyl methyl side group in the base polymer 失效
标题翻译：在基础聚合物中包含二（叔丁基）丙二酰基甲基侧基的化学增幅抗蚀剂的抗蚀剂组合物
公开(公告)号：US5733704A
公开(公告)日：1998-03-31
申请号：US705723
申请日：1996-08-30
申请人： Sang-jun Choi , Chun-geun Park
发明人： Sang-jun Choi , Chun-geun Park
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/111
摘要： A resist composition by which high resolution patterns can be formed in a lithography process, due to its high sensitivity to light and large difference in solubilities in a developing solution before and after exposure to light, and which has excellent thermal characteristics. The resist composition is suitable for manufacturing highly integrated semiconductor chips.
摘要翻译：由于其对光的高灵敏度和在曝光前后的显影液中的溶解度的大的差异，并且具有优异的热特性，因此可以在光刻工艺中形成高分辨率图案的抗蚀剂组合物。抗蚀剂组合物适用于制造高度集成的半导体芯片。

10. 发明申请

US20130029490A1 HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING 失效
公开(公告)号：US20130029490A1
公开(公告)日：2013-01-31
申请号：US13190378
申请日：2011-07-25
申请人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
发明人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
IPC分类号： H01L21/312
CPC分类号： H01L21/02 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32139
摘要： A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

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