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1. 发明授权

US08940128B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08940128B2
公开(公告)日：2015-01-27
申请号：US12853427
申请日：2010-08-10
申请人： Yusaku Sakka , Ryoji Nishio , Ken Yoshioka
发明人： Yusaku Sakka , Ryoji Nishio , Ken Yoshioka
IPC分类号： C23C16/505 , H01J37/32 , C23C16/507 , H05H1/46 , H05H1/36
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211 , H01J37/32651 , H05H2001/463
摘要： The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.
摘要翻译：本发明旨在抑制在真空处理室的内壁表面产生的自偏压，从而抑制真空处理室的内壁表面的碎裂或真空处理室的内部部分的消耗。本发明提供一种等离子体处理装置，其包括真空处理室，密封真空处理室的上部的真空处理室盖，感应天线，设置在感应天线和真空处理室盖之间的法拉第屏蔽，以及用于向感应天线提供高频电力的高频电源，其中感应天线被分成两部分或更多部分，法拉第屏蔽被分成对应于感应天线的分割数的分频数，高频电压是通过匹配盒从一个高频电源施加到其上。

2. 发明授权

US08425786B2 Plasma etching method and plasma etching apparatus 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US08425786B2
公开(公告)日：2013-04-23
申请号：US12700903
申请日：2010-02-05
申请人： Makoto Satake , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
发明人： Makoto Satake , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
IPC分类号： B44C1/22 , C25F3/00
CPC分类号： G11B5/84 , C23F4/00 , H01F10/14 , H01F10/16 , H01J37/321 , H01J37/32146 , H01J37/32449 , H01L43/12
摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.
摘要翻译：在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属，用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

3. 发明申请

US20120267050A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120267050A1
公开(公告)日：2012-10-25
申请号：US13190654
申请日：2011-07-26
申请人： Yusaku SAKKA , Ryoji Nishio , Tadayoshi Kawaguchi
发明人： Yusaku SAKKA , Ryoji Nishio , Tadayoshi Kawaguchi
IPC分类号： H01L21/3065
CPC分类号： H01J37/32119 , H01J37/321 , H01J37/3211
摘要： A uniform plasma processing to a sample is performed by adjusting the distribution of the induced magnetic field in an inductively-coupled-plasma processing apparatus and correcting the plasma distribution on the sample. Between an induction coil and a dielectric window a conductor is provided along the induction coil and side by side with at least a part of the induction coil in its circumferential direction. The conductor is set up at a location where the intensity of the induced magnetic field generated from the induction coil is wished to be weakened and the relationship of Lp≧Lr is satisfied, letting the shortest distance from the induction coil to the surface of the conductor be Lr and letting the shortest distance from the induction coil to the plasma generated directly under the dielectric window be Lp.
摘要翻译：通过调整感应耦合等离子体处理装置中的感应磁场的分布并校正样品上的等离子体分布来对样品进行均匀的等离子体处理。在感应线圈和电介质窗口之间，沿感应线圈设置有导体，与感应线圈的周向的至少一部分并排配置。将导体设置在感应线圈产生的感应磁场的强度要弱的位置，并且满足Lp≥Lr的关系的位置，使从感应线圈到导体表面的最短距离使Lr和从电感窗口直接产生的从感应线圈到等离子体的最短距离为Lp。

4. 发明授权

US07892444B2 Plasma processing apparatus and method for controlling the same 有权
标题翻译：等离子体处理装置及其控制方法
公开(公告)号：US07892444B2
公开(公告)日：2011-02-22
申请号：US11696263
申请日：2007-04-04
申请人： Ryoji Nishio
发明人： Ryoji Nishio
IPC分类号： G01L21/30 , G01R31/00
CPC分类号： H01J37/32165 , C23F4/00 , H01J37/32082
摘要： A method for controlling a plasma processing apparatus which includes a vacuum vessel, a first, second and third RF power supply, a first and second electrode, and a phase control unit for controlling a phase difference between a second RF voltage from the second RF power supply and a third RF voltage from the third RF power supply. The controlling method includes the steps of supplying a predetermined power from the first RF power supply to ignite plasma, after confirming ignition of plasma, supplying a predetermined power respectively from the second RF power supply and the third RF power supply, and when starting power supply from the second RF power supply and the third RF power supply, fixing the phase to a predetermined phase angle using a preset mode without carrying out phase control, and after a matching operation has stabilized, starting the phase control.
摘要翻译：一种用于控制等离子体处理装置的方法，其包括真空容器，第一，第二和第三RF电源，第一和第二电极以及相位控制单元，用于控制来自第二RF功率的第二RF电压之间的相位差电源和第三RF电源的第三RF电压。该控制方法包括以下步骤：在确认等离子体的点火之后，分别从第二RF电源和第三RF电源提供预定功率，以及当启动电源时，从第一RF电源提供预定功率以点燃等离子体从第二RF电源和第三RF电源，使用预设模式将相位固定为预定相位角，而不执行相位控制，并且在匹配操作已经稳定之后，开始相位控制。

5. 发明申请

US20070232085A1 Method and apparatus for plasma processing 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20070232085A1
公开(公告)日：2007-10-04
申请号：US11802955
申请日：2007-05-29
申请人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
发明人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
IPC分类号： H01L21/00
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
摘要翻译：本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理以及聚焦环上方的鞘 - 等离子体界面。聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差形成在晶片表面上。通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。

6. 发明申请

US20070184563A1 APPARATUS AND METHOD FOR PLASMA ETCHING 失效
标题翻译：用于等离子体蚀刻的装置和方法
公开(公告)号：US20070184563A1
公开(公告)日：2007-08-09
申请号：US11735657
申请日：2007-04-16
申请人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
发明人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
IPC分类号： H01L21/00 , H01L21/302 , H01L21/306
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.
摘要翻译：一种用于等离子体蚀刻装置的等离子体蚀刻方法，包括：处理室，用于对被处理物体进行等离子体蚀刻; 第一气体供应源; 第二气体供应源; 用于将处理气体引入处理室的第一气体入口; 用于将处理气体引入所述处理室的第二气体入口; 用于调节处理气体的流量的流量调节器; 以及用于将所述第一处理气体分成多个部分的气体分流器，其中所述第二处理气体与所述气体分流器和所述第一气体入口之间以及所述气体分流器和所述第二气体入口之间的至少一部分合并。

7. 发明授权

US06759253B2 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units 失效
标题翻译：等离子体处理装置中的过程监视方法，监视单元以及使用监视单元的样本处理方法
公开(公告)号：US06759253B2
公开(公告)日：2004-07-06
申请号：US09788629
申请日：2001-02-16
申请人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
发明人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
IPC分类号： H01L21302
CPC分类号： H01L22/34 , C23C16/50 , C23C16/52 , G01N21/73 , H01J37/32935 , H01L21/67253 , H01L2924/0002 , H01L2924/00
摘要： The intensity of the light emitted from the light-emitting diode on wafer is measured and then the potential difference between the terminals of the light-emitting element, and the plasma current flowing thereinto are derived from measured light intensity. Since the use of a camera enables non-contact measurement of emitted light intensity, the lead-in terminals for lead wires that are always required in conventional probing methods become unnecessary. In addition, since the target wafer does not require lead wire connection, wafers can be changed in the same way as performed for etching.
摘要翻译：测量从晶片上的发光二极管发射的光的强度，然后从测量的光强度导出发光元件的端子与其中流动的等离子体电流之间的电位差。由于使用相机能够非接触地测量发射的光强度，所以在常规探测方法中始终需要的导线的引入端子变得不必要。此外，由于目标晶片不需要引线连接，因此可以以与蚀刻相同的方式来改变晶片。

8. 发明授权

US06716301B2 Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe 失效
公开(公告)号：US06716301B2
公开(公告)日：2004-04-06
申请号：US09799527
申请日：2001-03-07
申请人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
发明人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
IPC分类号： H01L21306
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3299 , H01L21/31116
摘要： A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.

9. 发明授权

US06646233B2 Wafer stage for wafer processing apparatus and wafer processing method 失效
标题翻译：晶圆处理装置的晶片台和晶圆加工方法
公开(公告)号：US06646233B2
公开(公告)日：2003-11-11
申请号：US10087747
申请日：2002-03-05
申请人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
发明人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
IPC分类号： F27B514
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A wafer stage for use in wafer processing apparatus which comprises a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate that is attached onto the liquid cooling jacket and has therein a heater and an electrode for electrostatic chuck use, the wafer stage performing wafer processing while letting a wafer be mounted on the ceramic plate, wherein the liquid cooling jacket permits attachment of the ceramic plate through a coolant gas circulating gap as formed over the liquid cooling jacket while disposing between the liquid cooling jacket and the ceramic plate more than one heat resistant seal material containing therein an elastic body for sealing the coolant gas.
摘要翻译：用于晶片处理装置的晶片台，其包括具有内置冷却剂液体循环路径的液体冷却套和附接到液体冷却套上的陶瓷板，并且其中具有用于静电卡盘的加热器和电极，在将晶片安装在陶瓷板上的同时进行晶片处理的晶片台，其中液体冷却套管允许通过在液体冷却套上形成的冷却剂气体循环间隙来连接陶瓷板，同时设置在液体冷却套和陶瓷之间在其上容纳多个耐热密封材料，其中包含用于密封冷却剂气体的弹性体。

10. 发明授权

US06245202B1 Plasma treatment device 有权
标题翻译：等离子体处理装置
公开(公告)号：US06245202B1
公开(公告)日：2001-06-12
申请号：US09155906
申请日：1998-10-08
申请人： Manabu Edamura , Ryoji Nishio , Ken Yoshioka , Saburo Kanai
发明人： Manabu Edamura , Ryoji Nishio , Ken Yoshioka , Saburo Kanai
IPC分类号： C23C1434
CPC分类号： H01J37/321 , C23C16/507 , H01L21/3065 , H05H1/46
摘要： In a high-frequency inductive plasma etching apparatus, a space between an antenna to which a high-frequency power is fed and a processing chamber is insulated with an insulating material having a suitable thickness, while the antenna is protected from a plasma or a reactive gas for plasma processing and the surface of a side in contact with the plasma is covered by an insulating material such as alumina and quartz. The insulating material and the antenna are placed in a vacuum. Since the processing chamber which contains the insulating material and the antenna can take a pressure differential with atmospheric pressure, all that is required of the insulating material is its capacity to take the plasma atmosphere. Consequently, the insulating material can be made thin and the plasma is generated uniformly in high density. Heat generated at the antenna is dissipated to the outside either by making a gap between the antenna and its surroundings as small as possible or by bringing the pressure of the gap closer to the pressure in the processing chamber. Alternatively, several Torr of a non-reactive heat-transfer promoting gas such as He gas may be introduced into fine gaps formed around the antenna to dissipate heat generated at the antenna.
摘要翻译：在高频感应等离子体蚀刻装置中，馈送高频功率的天线与处理室之间的空间与具有适当厚度的绝缘材料绝缘，同时天线被保护免受等离子体或反应性用于等离子体处理的气体和与等离子体接触的一侧的表面被绝缘材料如氧化铝和石英覆盖。将绝缘材料和天线置于真空中。由于包含绝缘材料和天线的处理室可以承受大气压力的压力差，所以绝缘材料所需要的就是其承受等离子体气氛的能力。因此，可以使绝缘材料变薄，并且以高密度均匀地产生等离子体。通过在天线及其周围环境之间尽可能小的间隙或通过使间隙的压力更接近处理室中的压力而将在天线处产生的热量散发到外部。或者，可以将诸如He气体的非反应性热传递促进气体的几个Torr引入形成在天线周围的细小间隙中，以散发在天线处产生的热量。

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