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    • 4. 发明授权
    • Method and apparatus for the improved microwave deposition of thin films
    • 改进薄膜微波沉积的方法和装置
    • US5567241A
    • 1996-10-22
    • US442146
    • 1995-05-16
    • David V. TsuRosa YoungStanford R. Ovshinsky
    • David V. TsuRosa YoungStanford R. Ovshinsky
    • C23C16/511C23C16/517H01J37/32C23C16/00
    • H01J37/32211C23C16/511C23C16/517H01J37/321H01J37/32192H01J37/32678H01J2237/3321
    • A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atmospheric pressure region. The improved feed-through is designed to match the impedance of the microwave wave guide in the atmospheric pressure region and the improved linear microwave applicator. A second aspect of the present invention is an improved linear microwave applicator for uniformly coupling 95% or more of the microwave energy input thereto into an elongated plasma zone. The applicator includes curved microwave reflector panels which are used to tune the uniformity of the radiated microwave energy along the length of the linear applicator. A third aspect of the present invention is a microwave enhanced chemical vapor deposition method for depositing thin film material. The method includes a step of intensifying the kinetic/thermal energy of the electrically neutral species in the plasma by intensifying the kinetic/thermal energy of the ions in the plasma and thereby, through ion-neutral collisions, intensifying the kinetic/thermal energy of the electrically neutral species. The step of intensifying the kinetic/thermal energy of the ions in the plasma includes subjecting the plasma to either a very low frequency alternating current electrical bias or an alternating polarity magnetic field, the frequency of thereof being less than about 100 kHz.
    • 本发明的第一方面是一种改进的微波真空馈通装置,用于将微波能量从大气压力区域中的微波波导耦合到亚大气压区域中的细长线性微波施加器。 改进的馈通被设计成匹配大气压区域中的微波波导的阻抗和改进的线性微波施加器。 本发明的第二方面是一种改进的线性微波施加器,用于将输入到其中的95%或更多的微波能量均匀地耦合到细长的等离子体区域中。 施加器包括弯曲的微波反射器面板,其用于调节辐射的微波能量沿着线性施加器的长度的均匀性。 本发明的第三方面是用于沉积薄膜材料的微波增强化学气相沉积方法。 该方法包括通过增强等离子体中的离子的动能/热能来增强等离子体中的电中性物质的动力学/热能,从而通过离子中性碰撞强化其中的动能/热能 电中性物种。 增强等离子体中离子的动能/热能的步骤包括使等离子体经受非常低频的交流电偏压或交替极性磁场,其频率小于约100kHz。
    • 5. 发明授权
    • Method for the improved microwave deposition of thin films
    • 改进薄膜微波沉积的方法
    • US5324553A
    • 1994-06-28
    • US89207
    • 1993-07-09
    • Stanford R. OvshinskyDavid V. TsuRosa Young
    • Stanford R. OvshinskyDavid V. TsuRosa Young
    • C23C16/511C23C16/517H01J37/32B05D3/06
    • H01J37/32211C23C16/511C23C16/517H01J37/321H01J37/32192H01J37/32678H01J2237/3321
    • An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.
    • 一种改进的化学气相沉积方法,用于高速低温沉积的高品质薄膜材料。 该方法包括以下步骤:提供具有限定在其中的等离子体沉积区域的真空室; 将衬底放置在腔室内; 将等离子体沉积前体气体供应到所述抽真空室中的沉积区域; 将微波能量从其源引导到沉积区域,所述微波能量与沉积前体气体相互作用以形成电子,离子和活化的电中性物质的等离子体,所述等离子体包括一种或多种沉积物质; 通过将额外的非微波电子能量和磁能耦合到等离子体中来增加沉积物质在等离子体中的表面迁移率,而无需向基底或前体气体添加热能; 以及在衬底上沉积材料薄膜。