专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5766981A Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD 失效
标题翻译：具有选择性IILD的热处理，含磷或砷的半导体激光器
公开(公告)号：US5766981A
公开(公告)日：1998-06-16
申请号：US368676
申请日：1995-01-04
申请人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
发明人： Robert L. Thornton , Ross D. Bringans , G. A. Neville Connell , David W. Treat , David P. Bour , Fernando A. Ponce , Noble M. Johnson , Kevin J. Beernink
IPC分类号： H01L21/20 , H01L21/324 , H01S5/00 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34326 , H01S5/2275 , H01S5/3413 , H01S5/3414
摘要： Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. The deposition of the diffusion source films preferably is carried out in a low pressure reactor. Also disclosed is a scheme for reducing or eliminating phosphorus overpressure during silicon diffusion into III-V semiconducting material by adding a pre-diffusion anneal step. Defects produced during intermixing are also reduced using a GaInP or GaInP/GaAs cap.
摘要翻译： AlGaInP和AlGaAs异质结构的无缺陷杂质诱导激光无序化（IILD）的方法。使用磷掺杂或As掺杂膜，其中硅用作扩散源，氮化硅用作选择性IILD的屏障。可以使用与AlGaAs材料系统中制造的那些类似的技术来制造高性能，折射率引导（AlGa）0.5In0.5P激光器。扩散源膜的沉积优选在低压反应器中进行。还公开了通过添加预扩散退火步骤来减少或消除硅扩散到III-V半导体材料中的磷过压的方案。在混合过程中产生的缺陷也可以使用GaInP或GaInP / GaAs帽降低。

2. 发明授权

US5977612A Semiconductor devices constructed from crystallites 失效
标题翻译：由微晶构成的半导体器件
公开(公告)号：US5977612A
公开(公告)日：1999-11-02
申请号：US770403
申请日：1996-12-20
申请人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
发明人： David P. Bour , Fernando A. Ponce , G. A. Neville Connell , Ross D. Bringans , Noble M. Johnson , Werner K. Goetz , Linda T. Romano
IPC分类号： H01S5/00 , H01L29/201 , H01L33/16 , H01L33/32 , H01S5/323 , H01S5/343 , H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/201 , H01L33/16 , H01S5/34333
摘要： The present invention relates to electronic devices formed in crystallites of III-V nitride materials. Specifically, the present invention simplifies the processing technology required for the fabrication of high-performance electronic devices in III-V nitride materials.
摘要翻译：本发明涉及以III-V族氮化物材料微晶形成的电子器件。具体地说，本发明简化了在III-V族氮化物材料中制造高性能电子器件所需的加工技术。

3. 发明授权

US07283301B2 Emissive screen display with laser-based external addressing 有权
标题翻译：具有基于激光的外部寻址的发射屏幕显示
公开(公告)号：US07283301B2
公开(公告)日：2007-10-16
申请号：US11016242
申请日：2004-12-17
申请人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
发明人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
IPC分类号： G03B21/56
CPC分类号： H01J31/15 , G09G3/02 , G09G2360/141 , H01J31/127 , H01J31/505
摘要： A display apparatus includes an emissive screen having luminescent pixels that are addressed solely by a laser addressing system. Each pixel includes a luminescent region located next to a photocathode. When struck by the laser beam, free electrons are created that are accelerated by an applied high voltage field from the photocathode to the luminescent region, thereby causing the luminescent region to emit visible light with a brightness (energy) that is substantially higher than the energy of the addressing beam. Apertures are optionally provided in hexagonal luminescent regions to relax beam-scanning requirements. Optional millichannel plates (crude versions of 2nd generation night vision system Microchannel plates) are provided to enhance photon multiplication. A position sensitive device is implemented using the photocathode or photoanode (luminescent) material to facilitate the scanning and modulating process. Ambient light is prevented from generating unwanted pixel activation by filter coatings, spatial filtering or electronic filtering.
摘要翻译：显示装置包括具有仅由激光寻址系统寻址的发光像素的发射屏幕。每个像素包括位于光电阴极旁边的发光区域。当被激光束撞击时，产生通过从光电阴极到发光区域的施加的高电压场加速的自由电子，从而使得发光区域发射具有明显高于能量的亮度（能量）的可见光的寻址光束。孔可选地设置在六边形发光区域以缓和波束扫描需求。提供可选的米通道板（粗制版本的2代夜视系统微通道板）以增强光子倍增。使用光电阴极或光电阳极（发光）材料实现位置敏感器件以便于扫描和调制过程。通过过滤器涂层，空间滤波或电子滤波防止环境光产生不需要的像素激活。

4. 发明授权

US07232229B2 Laser-based display with position sensitive detector 有权
标题翻译：带位置敏感探测器的激光显示
公开(公告)号：US07232229B2
公开(公告)日：2007-06-19
申请号：US11016062
申请日：2004-12-17
申请人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
发明人： Eric Peeters , Noble M. Johnson , Ross D. Bringans
IPC分类号： G03B21/00 , G03B21/56
CPC分类号： G03B21/60 , G03B21/14 , H04N9/3129
摘要： A display apparatus includes a luminescent screen having pixels formed from blue, green and red luminescent material that are selectively activated by a laser beam to generate a full color image. The display utilizes a closed loop laser scanning/modulating arrangement in which a Position Sensitive Device (PSD) located next to the screen is used to determine the location of the impinging beam, and to transmit timing/location data to the laser addressing system. The laser addressing system uses the timing/location data to adjust and/or modulate the laser beam, thereby generating high-energy beam pulses that activate the selected pixels. The PSD includes vertical strips located along the side edges of the screen, or a sheet that is located behind the screen and accessed, for example, by way of slits or apertures formed in the screen material. The PSD sheet is coupled to an optional power source to form a photon-multiplication device.
摘要翻译：显示装置包括具有由蓝色，绿色和红色发光材料形成的像素的荧光屏，其被激光束选择性地激活以产生全色图像。显示器利用闭环激光扫描/调制装置，其中使用位于屏幕旁边的位置敏感装置（PSD）来确定入射光束的位置，并将定时/位置数据传送到激光寻址系统。激光寻址系统使用定时/位置数据来调整和/或调制激光束，从而产生激活所选择的像素的高能量束脉冲。 PSD包括沿着屏幕的侧边缘定位的垂直条，或者位于屏幕后面的片材，例如通过形成在屏幕材料中的狭缝或孔进入。 PSD片材耦合到可选的电源以形成光子倍增装置。

5. 发明授权

US07310358B2 Semiconductor lasers 有权
标题翻译：半导体激光器
公开(公告)号：US07310358B2
公开(公告)日：2007-12-18
申请号：US11015990
申请日：2004-12-17
申请人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
发明人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
IPC分类号： H01S3/10 , H01S5/00 , H01S3/14
CPC分类号： H01S5/0425 , H01S5/4031 , H01S5/4087
摘要： Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures. Exemplary differences include that one laser's semiconductor structure can have an isolated area that does not receive electrical current from a covering conductive layer; conductive layers of two layers can have different thicknesses or lengths; one laser can have a patterned layer with high electrical resistance between its semiconductor structure and a conductive layer; or one laser's semiconductor structure can include regions of high electrical resistance adjacent its contact structure.
摘要翻译：诸如激光结构的激光器可以包括两个或更多个半导体结构，其基本相同或包括相同的半导体材料并具有基本上相同的几何形状，例如紧密间隔的双点双光束或四点四光束，光束激光器。激光器还可以包括不同结构的电流或接触结构或不同的波长控制结构。例如，电流或接触结构可以被不同地构造以防止或以其他方式影响锁相，例如通过引起不同的阈值电流和不同的工作温度。示例性差异包括一个激光器的半导体结构可以具有不从覆盖导电层接收电流的隔离区域; 两层的导电层可以具有不同的厚度或长度; 一个激光器可以具有在其半导体结构和导电层之间具有高电阻的图案层; 或者一个激光器的半导体结构可以包括邻近其接触结构的高电阻的区域。

6. 发明授权

US07856040B2 Semiconductor light emitting devices with non-epitaxial upper cladding 有权
标题翻译：具有非外延上包层的半导体发光器件
公开(公告)号：US07856040B2
公开(公告)日：2010-12-21
申请号：US12237106
申请日：2008-09-24
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0045 , H01S5/0425 , H01S5/1039 , H01S5/1228 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S5/3211 , H01S5/3214 , H01S5/3216
摘要： The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer.
摘要翻译：氮化物激光二极管的AlGaN上覆层由诸如金属银的非外延层代替。如果选择具有相对低的折射率值，则在非外延包层中的吸收的模式损耗可以接受地小。如果还选择具有较高的功函数，则非外延层与氮化物半导体形成电接触。也可以在非外延包覆层中使用铟锡氧化物层。

7. 发明申请

US20100148147A1 MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING SELECTIVE AREA GROWTH 审中-公开
标题翻译：单色白色和全彩色发光二极管使用选择区域增长
公开(公告)号：US20100148147A1
公开(公告)日：2010-06-17
申请号：US12337580
申请日：2008-12-17
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/08 , H01L33/24
摘要： An embodiment is a method and apparatus for a white or full-color light-emitting diode. A first mask having a first pattern is applied over surface of an n-type layer. A first active region is grown selectively and including single or multiple quantum wells (QWs) of a first active color to cause a first wavelength shift in a first vicinity area around the first pattern. The first wavelength shift results in an emission of a first desired color according to the first pattern.
摘要翻译：一个实施例是用于白色或全彩色发光二极管的方法和装置。具有第一图案的第一掩模施加在n型层的表面上。选择性地生长第一有源区，并且包括第一有源颜色的单个或多个量子阱（QW），以在围绕第一图案的第一附近区域中引起第一波长偏移。第一波长偏移导致根据第一图案的第一所需颜色的发射。

8. 发明申请

US20100148146A1 MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING OPTICALLY PUMPED MULTIPLE QUANTUM WELLS 有权
标题翻译：单色白色和全彩色发光二极管使用光泵浦多个量子阱
公开(公告)号：US20100148146A1
公开(公告)日：2010-06-17
申请号：US12337572
申请日：2008-12-17
申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson
发明人： David P. Bour , Christopher L. Chua , Noble M. Johnson
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/08
摘要： An embodiment is a method and apparatus for a white or full-color light-emitting diode. First single or multiple quantum wells (QWs) at a first wavelength are formed at an active region between a p-type layer and an n-type layer of a light-emitting diode. Multiple passive quantum wells (QWs) are formed within the p-type layer or the n-type layer. The multiple passive QWs are optically pumped by the first or single multiple QWs to generate a desired color.
摘要翻译：一个实施例是用于白色或全彩色发光二极管的方法和装置。在第一波长处的第一单个或多个量子阱（QW）形成在发光二极管的p型层和n型层之间的有源区。在p型层或n型层内形成多个被动量子阱（QW）。多个无源QW由第一或单个多个QW光学泵浦以产生期望的颜色。

9. 发明申请

US20100006023A1 Method For Preparing Films And Devices Under High Nitrogen Chemical Potential 审中-公开
标题翻译：在高氮化学势下制备薄膜和器件的方法
公开(公告)号：US20100006023A1
公开(公告)日：2010-01-14
申请号：US12171623
申请日：2008-07-11
申请人： David P. Bour , Peter Kiesel , Christopher L. Chua , Noble M. Johnson , Zhihong Yang , John E. Northrup
发明人： David P. Bour , Peter Kiesel , Christopher L. Chua , Noble M. Johnson , Zhihong Yang , John E. Northrup
IPC分类号： C30B23/02 , C30B35/00
CPC分类号： C30B25/02 , C30B25/14 , C30B29/403
摘要： Nitride semiconductor films, such as for use in solid state light emitting devices and electronic devices, are fabricated in an environment of relatively high nitrogen potential such that nitrogen vacancies in the growing film are reduced. A reactor design, and method for its use, provide high nitrogen precursor partial pressure, precracking of the precursor using a catalytic metal surface, prepyrolyzing the precursor, using catalytically-cracked molecular nitrogen as a nitrogen precursor, and/or exposing the surface to an ambient which is extremely rich in active nitrogen species. Improved efficiency for light emitting devices, particularly in the blue and green wavelengths and improve transport properties in nitride electronic devices, i.e., improved performance from nitride-based devices such as InGaAlN laser diodes, transistors, and light emitting diodes is thereby provided.
摘要翻译：氮化物半导体膜，例如用于固态发光器件和电子器件的氮化物半导体膜，在氮势高的环境下制造，使得生长膜中的氮空位减少。反应器设计及其使用方法提供高氮前体分压，使用催化金属表面预裂化前体，使用催化裂化的分子氮作为氮前体预先分解前体，和/或将表面暴露于非常丰富的活性氮种类的环境。因此，提供了发光器件的效率，特别是蓝色和绿色波长的效率，并提高了氮化物电子器件的传输性能，即从诸如InGaAlN激光二极管，晶体管和发光二极管的氮化物基器件的改进性能。

10. 发明授权

US06816528B1 Method and structure for nitride based laser diode arrays on a conducting substrate 有权
标题翻译：导电衬底上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06816528B1
公开(公告)日：2004-11-09
申请号：US09224254
申请日：1998-12-30
申请人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/02276 , H01S5/0425 , H01S5/18 , H01S5/4031
摘要： Method and structure for nitride-based laser diode arrays on a conducting substrate are disclosed. Air-bridge structures are used to make compact laser diode arrays suitable for printer applications. The use of a channel structure architecture allows the making of surface emitting laser diode arrays.
摘要翻译：公开了一种导电衬底上基于氮化物的激光二极管阵列的方法和结构。空气桥结构用于制造适用于打印机应用的紧凑型激光二极管阵列。使用通道结构架构允许制造表面发射激光二极管阵列。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式