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1. 发明授权

US06816528B1 Method and structure for nitride based laser diode arrays on a conducting substrate 有权
标题翻译：导电衬底上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06816528B1
公开(公告)日：2004-11-09
申请号：US09224254
申请日：1998-12-30
申请人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/02276 , H01S5/0425 , H01S5/18 , H01S5/4031
摘要： Method and structure for nitride-based laser diode arrays on a conducting substrate are disclosed. Air-bridge structures are used to make compact laser diode arrays suitable for printer applications. The use of a channel structure architecture allows the making of surface emitting laser diode arrays.
摘要翻译：公开了一种导电衬底上基于氮化物的激光二极管阵列的方法和结构。空气桥结构用于制造适用于打印机应用的紧凑型激光二极管阵列。使用通道结构架构允许制造表面发射激光二极管阵列。

2. 发明授权

US06618413B2 Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure 有权
标题翻译：用于降低基于氮化物的激光二极管结构的阈值电压的分级半导体层
公开(公告)号：US06618413B2
公开(公告)日：2003-09-09
申请号：US10024239
申请日：2001-12-21
申请人： David P. Bour , Michael A. Kneissl
发明人： David P. Bour , Michael A. Kneissl
IPC分类号： H01S5343
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/321 , H01S5/34333
摘要： Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.
摘要翻译：基于氮化物的半导体激光器结构中的GaN和AlGaN层之间的梯度半导体层通过降低GaN和AlGaN层之间的界面处的电位势垒来降低激光器结构的阈值电压。分级层可以分级，连续分级或数字分级。

3. 发明授权

US06526083B1 Two section blue laser diode with reduced output power droop 有权
标题翻译：两部分蓝色激光二极管，输出功率降低
公开(公告)号：US06526083B1
公开(公告)日：2003-02-25
申请号：US09972361
申请日：2001-10-09
申请人： Michael A. Kneissl , Thomas L. Paoli
发明人： Michael A. Kneissl , Thomas L. Paoli
IPC分类号： H01S5026
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/0287 , H01S5/0625 , H01S5/06251 , H01S5/34333
摘要： A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and “drooping” of the light output.
摘要翻译： III-V族氮化物蓝色激光二极管具有放大器区域和调制器区域。放大器区域具有恒定电流以保持该区域接近激光阈值。调制器区域具有小的变化的正向电流或反向偏置电压，其控制激光器的光输出。这两部分蓝色激光二极管比直接调制的激光器要低得多的功耗，减少了瞬态加热和“下垂”光输出。

4. 发明授权

US08088637B1 Method of manufacturing a semiconductor device including a superlattice strain relief layer 有权
标题翻译：包括超晶格应变消除层的半导体器件的制造方法
公开(公告)号：US08088637B1
公开(公告)日：2012-01-03
申请号：US12435333
申请日：2009-05-04
申请人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
发明人： William S. Wong , Michael A. Kneissl , Zhihong Yang , Mark Teepe , Cliff Knollenberg
IPC分类号： H01L21/00
CPC分类号： H01L29/205 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/04 , H01L33/32 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/34333
摘要： A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
摘要翻译：在GaN /蓝宝石模板结构上形成GaN / AlN超晶格，其部分作为用于后续层（例如深UV发光二极管）生长的应变消除层。 GaN / AlN超晶格减轻GaN /蓝宝石模板和多量子阱异质结构有源区之间的应变，允许在有源区中使用高Al摩尔分数，从而在深紫外波长中发射。

5. 发明授权

US07526007B2 Buried lateral index guided lasers and lasers with lateral current blocking layers 有权
标题翻译：埋入横向折射率引导激光器和具有横向电流阻挡层的激光器
公开(公告)号：US07526007B2
公开(公告)日：2009-04-28
申请号：US11304221
申请日：2005-12-15
申请人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
发明人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
IPC分类号： H01S5/00
CPC分类号： H01S5/34313 , B82Y20/00 , G02B6/1228 , G02B6/125 , G02B6/305 , G02B6/4204 , H01L21/3006 , H01L33/02 , H01L33/145 , H01L33/32 , H01S5/0265 , H01S5/162 , H01S5/18308 , H01S5/18358 , H01S5/204 , H01S5/2072 , H01S5/22 , H01S5/32366 , H01S5/34306 , H01S5/4087
摘要： A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.
摘要翻译：描述了用于横向折射率引导的方法和结构。在该方法中，半导体器件有源区周围的横向区域暴露于氢。氢气调节围绕激光器有源区域的折射率，有助于将电载流子和所产生的光束限制在激光有源区域上。

6. 发明申请

US20090053845A1 Method For Controlling The Structure And Surface Qualities Of A Thin Film And Product Produced Thereby 审中-公开
标题翻译：用于控制薄膜的结构和表面质量的方法以及由此产生的产品
公开(公告)号：US20090053845A1
公开(公告)日：2009-02-26
申请号：US12265379
申请日：2008-11-05
申请人： William S. Wong , Michael A. Kneissl , Mark Teepe
发明人： William S. Wong , Michael A. Kneissl , Mark Teepe
IPC分类号： H01L21/18
CPC分类号： H01L33/0079 , B82Y20/00 , H01L21/30621 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/32341 , H01S5/34333
摘要： A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
摘要翻译：在从半导体结构去除衬底和模板层之后提供改进的表面质量的系统和方法在将散热器/导电衬底接合到衬底之前为层（例如量子阱异质结构有源区）提供改进的表面质量结构体。在物理去除蓝宝石衬底之后，将诸如旋涂聚合物光致抗蚀剂的牺牲涂层施加到暴露的GaN表面。该牺牲涂层提供了一般平行于下层的界面的平面的平面。选择牺牲涂层和蚀刻条件使得牺牲涂层的蚀刻速率近似与GaN和下面的层的蚀刻速率匹配，使得蚀刻期间的物理表面轮廓近似于蚀刻之前牺牲涂层的物理表面轮廓。在蚀刻之后，衬底被结合到作为散热器的暴露表面，并且可以是导电的，用于与有源区域的背面电接触。

7. 发明授权

US07122799B2 LED or laser enabled real-time PCR system and spectrophotometer 有权
标题翻译： LED或激光启用实时PCR系统和分光光度计
公开(公告)号：US07122799B2
公开(公告)日：2006-10-17
申请号：US10739706
申请日：2003-12-18
申请人： Huangpin Ben Hsieh , Michael A. Kneissl
发明人： Huangpin Ben Hsieh , Michael A. Kneissl
IPC分类号： G01J5/02
CPC分类号： G01N21/6454 , B01L7/52 , B01L2300/0654 , B01L2300/0829 , G01N21/0303 , G01N21/253 , G01N21/272 , G01N21/31 , G01N21/33 , G01N21/6452 , G01N21/6486 , G01N2201/0627
摘要： A system for conducting a polymerase chain reaction (PCR) assay upon a collection of samples is disclosed. The PCR assay is performed by absorption detection. The system includes a multi-well plate which is adapted to retain a collection of sample wells. This system includes a thermal cycler for the multi-well plate. The system additionally includes a collection of photodetectors, and a corresponding number of light sources. The light sources are positioned such that light emitted from each of the respective light sources passes through a corresponding well retained in the multi-well plate and to a corresponding photodetector. The system also includes a processor or other means for analyzing the output signals from the photodetectors. In certain versions of the system, ultra-violet light is used.
摘要翻译：公开了在收集样品时进行聚合酶链反应（PCR）测定的系统。通过吸收检测进行PCR测定。该系统包括多孔板，其适于保留一组样品孔。该系统包括用于多孔板的热循环仪。该系统还包括光电检测器的集合和相应数量的光源。光源被定位成使得从每个相应光源发射的光穿过保持在多孔板中的对应的阱和相应的光电检测器。该系统还包括用于分析来自光电检测器的输出信号的处理器或其它装置。在系统的某些版本中，使用紫外光。

8. 发明授权

US06875627B2 Structure and method for index-guided buried heterostructure AlGaInN laser diodes 有权
标题翻译：折射率引导掩埋异质结AlGaInN激光二极管的结构与方法
公开(公告)号：US06875627B2
公开(公告)日：2005-04-05
申请号：US10025462
申请日：2001-12-26
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S5/227 , H01S5/20 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
摘要翻译：与传统的脊波导结构相比，索引引导掩埋异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。

9. 发明授权

US06750120B1 Method and apparatus for MOCVD growth of compounds including GaAsN alloys using an ammonia precursor with a catalyst 失效
标题翻译：使用氨前体与催化剂的化合物包括GaAsN合金的MOCVD生长的方法和装置
公开(公告)号：US06750120B1
公开(公告)日：2004-06-15
申请号：US10317762
申请日：2002-12-12
申请人： Michael A. Kneissl , David W. Treat
发明人： Michael A. Kneissl , David W. Treat
IPC分类号： H01L2120
CPC分类号： C30B29/40 , C30B25/02 , H01L21/02395 , H01L21/02458 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/0262 , H01L31/1844 , Y02E10/544
摘要： A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation of introducing ammonia with an agent to assist in the breakdown of the ammonia into a reaction chamber with the GaAs film. Agents that are described include radiation as well as compounds that include aluminum.
摘要翻译：描述了使用氨形成具有氮原子的GaAs合金的方法。该方法包括用氨引入氨以帮助将氨分解成具有GaAs膜的反应室的操作。所描述的试剂包括辐射以及包括铝的化合物。

10. 发明授权

US06574256B1 Distributed feedback laser fabricated by lateral overgrowth of an active region 有权
标题翻译：通过有源区域的横向过度生长制造的分布式反馈激光器
公开(公告)号：US06574256B1
公开(公告)日：2003-06-03
申请号：US09487409
申请日：2000-01-18
申请人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
发明人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/1228 , H01S5/2009 , H01S5/34333 , H01S2304/12
摘要： A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.
摘要翻译：分布式反馈结构包括基板材料。有源层具有包括铝，镓，铟和氮中的至少一种的合金。具有包括铝，镓，铟和氮中的至少一种的合金的第一包层位于有源层的第一侧上。具有包括铝，镓，铟和氮中的至少一种的合金的第二覆层位于有源层的第二侧上。在第一和第二包层中的至少一个中的折射率的周期性变化提供分布式光学反馈。

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