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1. 发明授权

US07310358B2 Semiconductor lasers 有权
标题翻译：半导体激光器
公开(公告)号：US07310358B2
公开(公告)日：2007-12-18
申请号：US11015990
申请日：2004-12-17
申请人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
发明人： Christopher L. Chua , Michael A. Kneissl , Patrick Y. Maeda , Noble M. Johnson , Ross D. Bringans , John E. Northrup , David K. Biegelsen
IPC分类号： H01S3/10 , H01S5/00 , H01S3/14
CPC分类号： H01S5/0425 , H01S5/4031 , H01S5/4087
摘要： Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures. Exemplary differences include that one laser's semiconductor structure can have an isolated area that does not receive electrical current from a covering conductive layer; conductive layers of two layers can have different thicknesses or lengths; one laser can have a patterned layer with high electrical resistance between its semiconductor structure and a conductive layer; or one laser's semiconductor structure can include regions of high electrical resistance adjacent its contact structure.
摘要翻译：诸如激光结构的激光器可以包括两个或更多个半导体结构，其基本相同或包括相同的半导体材料并具有基本上相同的几何形状，例如紧密间隔的双点双光束或四点四光束，光束激光器。激光器还可以包括不同结构的电流或接触结构或不同的波长控制结构。例如，电流或接触结构可以被不同地构造以防止或以其他方式影响锁相，例如通过引起不同的阈值电流和不同的工作温度。示例性差异包括一个激光器的半导体结构可以具有不从覆盖导电层接收电流的隔离区域; 两层的导电层可以具有不同的厚度或长度; 一个激光器可以具有在其半导体结构和导电层之间具有高电阻的图案层; 或者一个激光器的半导体结构可以包括邻近其接触结构的高电阻的区域。

2. 发明授权

US07242705B2 Grating-outcoupled cavity resonator having uni-directional emission 有权
标题翻译：具有单向发射的光栅耦合谐振腔
公开(公告)号：US07242705B2
公开(公告)日：2007-07-10
申请号：US10736602
申请日：2003-12-17
申请人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen
发明人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen
IPC分类号： H01S3/07 , H01S5/00
CPC分类号： H01S5/1075 , B82Y20/00 , H01S5/0213 , H01S5/1042 , H01S5/1231 , H01S5/187 , H01S5/34333
摘要： A grating-outcoupled microcavity disk resonator has whispering gallery modes existing in a nearly circular resonator. Light is outcoupled by providing a grating region in the plane of the grating-outcoupled microcavity disk resonator. The grating region provides an outcoupling or loss mechanism that symmetrically interacts with the clockwise and counterclockwise whispering gallery modes, thereby making the resonator capable of surface emission.
摘要翻译：光栅耦合的微腔光盘谐振器具有存在于近圆形谐振器中的耳语画廊模式。通过在光栅输出耦合的微腔盘谐振器的平面中提供光栅区域来将光输出耦合。光栅区域提供与顺时针和逆时针耳语画廊模式对称地相互作用的输出耦合或损失机制，从而使谐振器能够进行表面发射。

3. 发明授权

US07031365B2 Locally-outcoupled cavity resonator having unidirectional emission 失效
标题翻译：具有单向发射的本地耦合腔谐振器
公开(公告)号：US07031365B2
公开(公告)日：2006-04-18
申请号：US10428068
申请日：2003-05-02
申请人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen , Richard K. Chang , A. Douglas Stone , Grace D. Chern , Hakan E. Tureci , Joseph Zyss
发明人： Michael A. Kneissl , Noble M. Johnson , David K. Biegelsen , Richard K. Chang , A. Douglas Stone , Grace D. Chern , Hakan E. Tureci , Joseph Zyss
IPC分类号： H01S3/083
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/1075 , H01S5/1082 , H01S5/18 , H01S5/40
摘要： A locally-outcoupled optical resonator has whispering gallery modes existing in a nearly circular resonator. Light is outcoupled by providing a local perturbing feature on the perimeter of the locally-outcoupled cavity resonator. The perturbing feature provides an outcoupling or loss mechanism that asymmetrically interacts with circulating whispering gallery modes, thereby making the resonator capable of uni-directional output.
摘要翻译：本地耦合的光学谐振器具有存在于近圆形谐振器中的耳语画廊模式。通过在局部输出耦合腔谐振器的周边提供局部扰动特征来将光输出耦合。扰动特征提供了一种与循环语音库模式不对称地相互作用的输出耦合或丢失机制，从而使谐振器能够单向输出。

4. 发明授权

US06655964B2 Low cost integrated out-of-plane micro-device structures and method of making 有权
公开(公告)号：US06655964B2
公开(公告)日：2003-12-02
申请号：US09780185
申请日：2001-02-09
申请人： David K. Fork , Christopher L. Chua , Koenraad F. Van Schuylenbergh , Noble M. Johnson , David K. Biegelsen
发明人： David K. Fork , Christopher L. Chua , Koenraad F. Van Schuylenbergh , Noble M. Johnson , David K. Biegelsen
IPC分类号： H01R1200
CPC分类号： H01L27/08 , H01F17/0033 , H01F41/041 , H01L21/4853 , H05K3/4092
摘要： Several methods and structures for improving the yield of out-of-plane micro-device structures including springs and coils are described. In one method the elastic members have graded perforations for controlling rate of release. In another method and structure, a layout enables the contact landing area to be increased. The high yield structures may be used in numerous electronic applications such as filter circuits.

5. 发明授权

US07526007B2 Buried lateral index guided lasers and lasers with lateral current blocking layers 有权
标题翻译：埋入横向折射率引导激光器和具有横向电流阻挡层的激光器
公开(公告)号：US07526007B2
公开(公告)日：2009-04-28
申请号：US11304221
申请日：2005-12-15
申请人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
发明人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
IPC分类号： H01S5/00
CPC分类号： H01S5/34313 , B82Y20/00 , G02B6/1228 , G02B6/125 , G02B6/305 , G02B6/4204 , H01L21/3006 , H01L33/02 , H01L33/145 , H01L33/32 , H01S5/0265 , H01S5/162 , H01S5/18308 , H01S5/18358 , H01S5/204 , H01S5/2072 , H01S5/22 , H01S5/32366 , H01S5/34306 , H01S5/4087
摘要： A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.
摘要翻译：描述了用于横向折射率引导的方法和结构。在该方法中，半导体器件有源区周围的横向区域暴露于氢。氢气调节围绕激光器有源区域的折射率，有助于将电载流子和所产生的光束限制在激光有源区域上。

6. 发明授权

US07843982B2 High power semiconductor device to output light with low-absorbtive facet window 有权
标题翻译：大功率半导体器件用低吸收面窗口输出光
公开(公告)号：US07843982B2
公开(公告)日：2010-11-30
申请号：US11300861
申请日：2005-12-15
申请人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
发明人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
IPC分类号： H01S5/028
CPC分类号： H01S5/162 , B82Y20/00 , G02B6/1228 , G02B6/305 , G02B6/4204 , G02B2006/1215 , H01L33/02 , H01L33/145 , H01L33/32 , H01S5/0265 , H01S5/18308 , H01S5/18358 , H01S5/204 , H01S5/2072 , H01S5/22 , H01S5/32366 , H01S5/34306 , H01S5/34313 , H01S5/4087
摘要： A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results.
摘要翻译：描述了避免由小平面加热引起的装置故障的方法。该方法特别适用于半导体激光器。在该方法中，包括GaAsN的半导体激光刻面被氢化，使得该刻面内的带隙大于InGaAsN激光器的有源区域中的带隙。增加的带隙减小了小面上的光的吸收和结果的相关加热。

7. 发明授权

US07764721B2 System for adjusting the wavelength light output of a semiconductor device using hydrogenation 失效
标题翻译：用于使用氢化调节半导体器件的波长光输出的系统
公开(公告)号：US07764721B2
公开(公告)日：2010-07-27
申请号：US11300962
申请日：2005-12-15
申请人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
发明人： Christopher L. Chua , Michael A. Kneissl , Noble M. Johnson , Peter Kiesel
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/187 , H01S5/34333
摘要： A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning many device types including regular lasers and VCSEL structures. The adjustment also allows for mass production of lasers of many different frequencies on a single wafer substrate, a system particularly desirable for wavelength division multiplexing systems.
摘要翻译：描述了用于调整半导体器件的波长输出的方法和结构。在该方法中，半导体器件的有源区中的氢浓度在制造期间或在器件制造之后被调整。该调整提供了一种简单的技术，用于微调许多设备类型，包括常规激光器和VCSEL结构。该调整还允许在单个晶片衬底上大量生产许多不同频率的激光器，这是对于波分复用系统特别理想的系统。

8. 发明申请

US20100006023A1 Method For Preparing Films And Devices Under High Nitrogen Chemical Potential 审中-公开
标题翻译：在高氮化学势下制备薄膜和器件的方法
公开(公告)号：US20100006023A1
公开(公告)日：2010-01-14
申请号：US12171623
申请日：2008-07-11
申请人： David P. Bour , Peter Kiesel , Christopher L. Chua , Noble M. Johnson , Zhihong Yang , John E. Northrup
发明人： David P. Bour , Peter Kiesel , Christopher L. Chua , Noble M. Johnson , Zhihong Yang , John E. Northrup
IPC分类号： C30B23/02 , C30B35/00
CPC分类号： C30B25/02 , C30B25/14 , C30B29/403
摘要： Nitride semiconductor films, such as for use in solid state light emitting devices and electronic devices, are fabricated in an environment of relatively high nitrogen potential such that nitrogen vacancies in the growing film are reduced. A reactor design, and method for its use, provide high nitrogen precursor partial pressure, precracking of the precursor using a catalytic metal surface, prepyrolyzing the precursor, using catalytically-cracked molecular nitrogen as a nitrogen precursor, and/or exposing the surface to an ambient which is extremely rich in active nitrogen species. Improved efficiency for light emitting devices, particularly in the blue and green wavelengths and improve transport properties in nitride electronic devices, i.e., improved performance from nitride-based devices such as InGaAlN laser diodes, transistors, and light emitting diodes is thereby provided.
摘要翻译：氮化物半导体膜，例如用于固态发光器件和电子器件的氮化物半导体膜，在氮势高的环境下制造，使得生长膜中的氮空位减少。反应器设计及其使用方法提供高氮前体分压，使用催化金属表面预裂化前体，使用催化裂化的分子氮作为氮前体预先分解前体，和/或将表面暴露于非常丰富的活性氮种类的环境。因此，提供了发光器件的效率，特别是蓝色和绿色波长的效率，并提高了氮化物电子器件的传输性能，即从诸如InGaAlN激光二极管，晶体管和发光二极管的氮化物基器件的改进性能。

9. 发明授权

US08330144B2 Semi-polar nitride-based light emitting structure and method of forming same 有权
标题翻译：半极性氮化物基发光结构及其形成方法
公开(公告)号：US08330144B2
公开(公告)日：2012-12-11
申请号：US13550504
申请日：2012-07-16
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有窗口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

10. 发明授权

US08247249B2 Semi-polar nitride-based light emitting structure and method of forming same 有权
标题翻译：半极性氮化物基发光结构及其形成方法
公开(公告)号：US08247249B2
公开(公告)日：2012-08-21
申请号：US12791552
申请日：2010-06-01
申请人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
发明人： Andre Strittmatter , Noble M. Johnson , Mark Teepe , Christopher L. Chua , Zhihong Yang , John E. Northrup
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01S5/3202 , H01S5/34306 , H01S2304/12
摘要： A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.
摘要翻译：其结构和制造方法提供了在非c面取向（例如，半极性）模板或衬底上的外延形成的氮化物层中具有抑制的晶格缺陷的固态发光器件。具有“窗口”开口或沟槽的电介质层在生长期间提供对所有对角线运行的缺陷的显着抑制。适当高度和间距的柱可进一步抑制垂直运行的缺陷。在电介质层上形成包含氮化镓的层，并且被抛光以提供具有期望粗糙度的平面生长表面。采用三层氮化铟镓活性区。对于激光二极管实施例，在氮化镓层上方设置相对厚的氮化镓铝覆层。

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