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1. 发明授权

US06816528B1 Method and structure for nitride based laser diode arrays on a conducting substrate 有权
标题翻译：导电衬底上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06816528B1
公开(公告)日：2004-11-09
申请号：US09224254
申请日：1998-12-30
申请人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/02276 , H01S5/0425 , H01S5/18 , H01S5/4031
摘要： Method and structure for nitride-based laser diode arrays on a conducting substrate are disclosed. Air-bridge structures are used to make compact laser diode arrays suitable for printer applications. The use of a channel structure architecture allows the making of surface emitting laser diode arrays.
摘要翻译：公开了一种导电衬底上基于氮化物的激光二极管阵列的方法和结构。空气桥结构用于制造适用于打印机应用的紧凑型激光二极管阵列。使用通道结构架构允许制造表面发射激光二极管阵列。

2. 发明授权

US06744800B1 Method and structure for nitride based laser diode arrays on an insulating substrate 有权
标题翻译：绝缘基板上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06744800B1
公开(公告)日：2004-06-01
申请号：US09223112
申请日：1998-12-30
申请人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
摘要翻译：描述了绝缘基板上的基于氮化物的激光二极管阵列的方法和结构。使用各种接触布局来减少阵列中的激光二极管之间的电和热串扰。通道结构用于制造表面发射激光二极管，同时保持简单的接触结构。掩埋层用于为激光二极管阵列提供紧凑且低串扰的接触结构。

3. 发明授权

US06574256B1 Distributed feedback laser fabricated by lateral overgrowth of an active region 有权
标题翻译：通过有源区域的横向过度生长制造的分布式反馈激光器
公开(公告)号：US06574256B1
公开(公告)日：2003-06-03
申请号：US09487409
申请日：2000-01-18
申请人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
发明人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/1228 , H01S5/2009 , H01S5/34333 , H01S2304/12
摘要： A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.
摘要翻译：分布式反馈结构包括基板材料。有源层具有包括铝，镓，铟和氮中的至少一种的合金。具有包括铝，镓，铟和氮中的至少一种的合金的第一包层位于有源层的第一侧上。具有包括铝，镓，铟和氮中的至少一种的合金的第二覆层位于有源层的第二侧上。在第一和第二包层中的至少一个中的折射率的周期性变化提供分布式光学反馈。

4. 发明授权

US06597717B1 Structure and method for index-guided, inner stripe laser diode structure 有权
标题翻译：折射率导向，内条激光二极管结构的结构和方法
公开(公告)号：US06597717B1
公开(公告)日：2003-07-22
申请号：US09443172
申请日：1999-11-19
申请人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Brent S. Krusor , Noble M. Johnson
发明人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Brent S. Krusor , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2214 , H01S5/222 , H01S5/2227 , H01S5/2231 , H01S5/34333
摘要： An inner stripe laser diode structure for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.
摘要翻译：公开了一种用于GaN激光二极管的内条激光二极管结构。内部条纹激光二极管结构提供了实现低阈值单模激光二极管的便利手段。修改内部条纹激光二极管的结构以产生横向折射率引导。

5. 发明授权

US6090300A Ion-implantation assisted wet chemical etching of III-V nitrides and alloys 失效
标题翻译： III-V氮化物和合金的离子注入辅助湿化学蚀刻
公开(公告)号：US6090300A
公开(公告)日：2000-07-18
申请号：US84223
申请日：1998-05-26
申请人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
发明人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
IPC分类号： H01L33/00 , H01S5/20 , H01S5/323 , H01L21/3115 , B44C1/22
CPC分类号： H01L33/007 , H01S5/2081 , H01S5/32341
摘要： A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
摘要翻译：蚀刻III-V族氮化物和III-V族氮化物合金材料的方法首先用离子注入材料的选定区域，然后选择性地蚀刻蚀刻液体（例如碱水溶液）中的注入区域。蚀刻深度由注入离子的能量，质量和剂量控制。

6. 发明授权

US06618413B2 Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure 有权
标题翻译：用于降低基于氮化物的激光二极管结构的阈值电压的分级半导体层
公开(公告)号：US06618413B2
公开(公告)日：2003-09-09
申请号：US10024239
申请日：2001-12-21
申请人： David P. Bour , Michael A. Kneissl
发明人： David P. Bour , Michael A. Kneissl
IPC分类号： H01S5343
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/321 , H01S5/34333
摘要： Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.
摘要翻译：基于氮化物的半导体激光器结构中的GaN和AlGaN层之间的梯度半导体层通过降低GaN和AlGaN层之间的界面处的电位势垒来降低激光器结构的阈值电压。分级层可以分级，连续分级或数字分级。

7. 发明授权

US06875627B2 Structure and method for index-guided buried heterostructure AlGaInN laser diodes 有权
标题翻译：折射率引导掩埋异质结AlGaInN激光二极管的结构与方法
公开(公告)号：US06875627B2
公开(公告)日：2005-04-05
申请号：US10025462
申请日：2001-12-26
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S5/227 , H01S5/20 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
摘要翻译：与传统的脊波导结构相比，索引引导掩埋异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。

8. 发明授权

US06389051B1 Structure and method for asymmetric waveguide nitride laser diode 有权
公开(公告)号：US06389051B1
公开(公告)日：2002-05-14
申请号：US09343939
申请日：1999-06-30
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

9. 发明授权

US06365429B1 Method for nitride based laser diode with growth substrate removed using an intermediate substrate 有权
标题翻译：使用中间基板去除生长衬底的基于氮化物的激光二极管的方法
公开(公告)号：US06365429B1
公开(公告)日：2002-04-02
申请号：US09276856
申请日：1999-03-26
申请人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
发明人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
IPC分类号： H01L2100
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed.
摘要翻译：描述了将氮化物激光二极管阵列放置在导热衬底上的方法。该方法使用准分子激光器在将中间衬底附着到与蓝宝石衬底相对的一侧附近后从蓝宝石生长衬底分离氮化物激光二极管。导热衬底随后与去除蓝宝石衬底的一侧接合。

10. 发明授权

US07123637B2 Nitride-based laser diode with GaN waveguide/cladding layer 有权
标题翻译：氮化镓基激光二极管与GaN波导/包层
公开(公告)号：US07123637B2
公开(公告)日：2006-10-17
申请号：US10394559
申请日：2003-03-20
申请人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Christian G. Van de Walle
发明人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Christian G. Van de Walle
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2009 , H01S5/2205 , H01S5/2231 , H01S5/3213 , H01S5/34333
摘要： A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg layer produces an optical confinement that is comparable to or better than conventional structures. A thin AlGaN tunnel barrier layer is provided between the multiple quantum well and a lower portion of the GaN:Mg waveguide layer, which suppresses electron leakage without any significant decrease in optical confinement. A split-metal electrode is formed on the GaN:Mg upper waveguide structure to avoid absorption losses in the upper electrode metal. A pair of AlGaN:Si current blocking layer sections are located below the split-metal electrode sections, and separated by a gap located over the active region of the multiple quantum well.
摘要翻译：使用单个GaN：Mg波导/包覆层的氮化物基激光二极管结构代替用于常规氮化物基激光二极管结构中的单独的GaN：Mg波导和AlGaN：Mg包覆层。当使用最佳厚度形成时，GaN：Mg层产生与传统结构相当或更好的光学约束。在多量子阱和GaN：Mg波导层的下部之间提供薄的AlGaN隧道势垒层，其抑制电子泄漏，而不会明显减少光学限制。在GaN：Mg上部波导结构上形成裂缝金属电极，以避免上部电极金属中的吸收损失。一对AlGaN：Si电流阻挡层部分位于裂缝金属电极部分下方，并被位于多量子阱的有源区上方的间隙分开。

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