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1. 发明授权

US4541167A Method for integrated circuit device isolation 失效
标题翻译：集成电路器件隔离方法
公开(公告)号：US4541167A
公开(公告)日：1985-09-17
申请号：US570145
申请日：1984-01-12
申请人： Robert H. Havemann , Gordon P. Pollack
发明人： Robert H. Havemann , Gordon P. Pollack
IPC分类号： H01L21/033 , H01L21/762 , H01L21/76
CPC分类号： H01L21/033 , H01L21/76216 , Y10S148/05
摘要： The disclosure relates to a method manufacturing semiconductor devices which minimizes encroachment by utilizing a polycrystalline silicon (polysilicon) layer over a grown oxide on the substrate with a nitride layer positioned above the polysilicon layer. A patterned resist is then formed in the active device regions and the device is then etched in the regions where the resist has not been applied to remove the nitride layer, the polysilicon layer and the oxide layer in one embodiment and, in a second embodiment, also removes a portion of the substrate. The silicon substrate portion which is exposed is then oxidized by field oxidation to provide, in the first embodiment, an oxide layer which rises above the level of the polysilicon layer and, in the second embodiment, to a point equal to or slightly above the oxide layer beneath the polysilicon layer. The nitride and polysilicon layer are then stripped or, alternatively, the polysilicon layer can be oxidized. The oxide layer in the active region is then etched back to the silicon layer and a gate oxide is then formed in the active region in standard manner. The processing then continues in standard manner to provide an MOS or bipolar device. The above noted procedure provides active semiconductor devices with essentially no encroachment or "bird beak" problem present. The procedure can also be used with elimination of the first oxide layer over the substrate.
摘要翻译：本公开涉及一种制造半导体器件的方法，其通过在衬底上的生长的氧化物上利用多晶硅（多晶硅）层来最小化侵入，其中位于多晶硅层上方的氮化物层。然后在有源器件区域中形成图案化的抗蚀剂，然后在一个实施例中，在没有施加抗蚀剂的区域中蚀刻器件以去除氮化物层，多晶硅层和氧化物层，并且在第二实施例中，也去除了衬底的一部分。暴露的硅衬底部分然后通过场氧化来氧化，以在第一实施例中提供一个氧化物层，其上升到多晶硅层的高度以上，并且在第二实施例中提供到等于或略高于氧化物的点多晶硅层下面。然后将氮化物和多晶硅层剥离，或者，多晶硅层可被氧化。然后将有源区中的氧化物层回蚀刻到硅层，然后以标准方式在有源区中形成栅极氧化物。然后以标准方式继续处理以提供MOS或双极器件。上述步骤提供了基本上没有侵入或“鸟嘴”问题存在的有源半导体器件。该方法也可用于消除衬底上的第一氧化物层。

2. 发明授权

US06995439B1 Method of fabricating low dielectric constant dielectric films 失效
标题翻译：制备低介电常数介电膜的方法
公开(公告)号：US06995439B1
公开(公告)日：2006-02-07
申请号：US10803234
申请日：2004-03-17
申请人： Richard S. Hill , Willibrordus Gerardus Maria van den Hoek , Robert H. Havemann
发明人： Richard S. Hill , Willibrordus Gerardus Maria van den Hoek , Robert H. Havemann
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/7682 , H01L2221/1047
摘要： Porous dielectric layers are produced by introducing small vertical or columnar gaps in pre-formed layers of dense dielectric. The pores may be formed by a special process that is different from the processes employed to form metal lines and other features on a VLSI device. Further, the columnar gaps may be produced after the planarization process for a particular layer has been completed. Then, after the pores are formed, they are capped by depositing another layer of material. In this manner, the newly porous layer is protected from direct exposure to the pressure of subsequent planarization processes. In alternative embodiments, the processes described herein are applied to introduce pores into a pre-formed layer of semiconductor to produce a porous semiconductor layer.
摘要翻译：通过在致密电介质的预先形成的层中引入小的垂直或柱状间隙来产生多孔电介质层。可以通过与用于在VLSI器件上形成金属线和其它特征的工艺不同的特殊工艺形成孔。此外，在特定层的平坦化处理已经完成之后可以产生柱状间隙。然后，在形成孔之后，通过沉积另一层材料来封盖它们。以这种方式，保护新的多孔层免于直接暴露于随后的平坦化工艺的压力。在替代实施例中，应用本文所述的工艺以将孔引入预成形的半导体层中以产生多孔半导体层。

3. 发明授权

US06365451B2 Transistor and method 有权
标题翻译：晶体管和方法
公开(公告)号：US06365451B2
公开(公告)日：2002-04-02
申请号：US09821602
申请日：2001-03-29
申请人： Robert H. Havemann
发明人： Robert H. Havemann
IPC分类号： H01L218238
CPC分类号： H01L29/66287 , H01L29/0821 , H01L29/1004 , H01L29/7322
摘要： A method of fabricating a semiconductor device and the device. The device is fabricated by providing a substrate having a region thereover of electrically conductive material, and a dielectric first sidewall spacer on the region of electrically conductive material. A second sidewall spacer is formed over the first sidewall spacer extending to the substrate from a material which is selectively removal relative to the first sidewall spacer. An electrically conductive region is formed contacting the second sidewall spacer and spaced from the substrate. The second sidewall spacer is selectively removable to form an opening between the substrate and the electrically conductive region. The opening is filled with electrically conductive material to electrically couple the electrically conductive material to the substrate.
摘要翻译：一种制造半导体器件和器件的方法。该器件通过提供具有导电材料之上的区域的基底和在导电材料区域上的电介质第一侧壁间隔物来制造。第二侧壁间隔件形成在从相对于第一侧壁间隔件选择性地移除的材料延伸到基板的第一侧壁间隔物的上方。形成接触第二侧壁间隔物并与衬底隔开的导电区域。第二侧壁间隔件可选择性地移除以在基板和导电区域之间形成开口。开口填充有导电材料以将导电材料电耦合到基底。

4. 发明授权

US06271577B1 Transistor and method 有权
标题翻译：晶体管和方法
公开(公告)号：US06271577B1
公开(公告)日：2001-08-07
申请号：US09212136
申请日：1998-12-15
申请人： Robert H. Havemann
发明人： Robert H. Havemann
IPC分类号： H01L27082
CPC分类号： H01L29/66287 , H01L29/0821 , H01L29/1004 , H01L29/7322
摘要： A method of fabricating a semiconductor device and the device. The device is fabricated by providing a substrate having a region thereover of electrically conductive material, and a dielectric first sidewall spacer on the region of electrically conductive material. A second sidewall spacer is formed over the first sidewall spacer extending to the substrate from a material which is selectively removal relative to the first sidewall spacer. An electrically conductive region is formed contacting the second sidewall spacer and spaced from the substrate. The second sidewall spacer is selectively removable to form an opening between the substrate and the electrically conductive region. The opening is filled with electrically conductive material to electrically couple the electrically conductive material to the substrate.
摘要翻译：一种制造半导体器件和器件的方法。该器件通过提供具有导电材料之上的区域的基底和在导电材料区域上的电介质第一侧壁间隔物来制造。第二侧壁间隔件形成在从相对于第一侧壁间隔件选择性地移除的材料延伸到基板的第一侧壁间隔物的上方。形成接触第二侧壁间隔物并与衬底隔开的导电区域。第二侧壁间隔件可选择性地移除以在基板和导电区域之间形成开口。开口填充有导电材料以将导电材料电耦合到基底。

5. 发明授权

US6130156A Variable doping of metal plugs for enhanced reliability 有权
标题翻译：金属插头的可变掺杂可提高可靠性
公开(公告)号：US6130156A
公开(公告)日：2000-10-10
申请号：US281538
申请日：1999-03-30
申请人： Robert H. Havemann , Girish A. Dixit , Stephen W. Russell
发明人： Robert H. Havemann , Girish A. Dixit , Stephen W. Russell
IPC分类号： H01L23/52 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L21/441
CPC分类号： H01L21/76843 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L21/76886 , H01L2221/1089 , H01L23/53219 , H01L23/53233 , H01L2924/0002
摘要： A method of fabricating an interconnect wherein there is initially provided a first layer of electrically conductive interconnect (3). A via (7) is formed which is defined by walls extending to the first layer of interconnect. A layer of titanium (9) is formed between the electrically conductive interconnect and the first layer of electrically conductive metal (11). A first layer of electrically conductive metal is formed on the walls of the via having a predetermined etch rate relative to a specific etch species and a second layer of electrically conductive metal (13) is formed on the first layer of electrically conductive metal having an etch rate relative to the specific etch species greater than the first layer and which preferably extends into the via. The first layer of electrically conductive interconnect is preferably aluminum, the first layer of electrically conductive metal is preferably a metal containing from about one percent by weight to about one hundred percent copper and the rest essentially aluminum and the second layer of electrically conductive metal is preferably copper doped aluminum having a lower copper content than the first electrically conductive layer.
摘要翻译：一种制造互连的方法，其中最初提供第一层导电互连（3）。形成通孔（7），其通过延伸到第一互连层的壁限定。在导电互连和导电金属（11）的第一层之间形成一层钛（9）。第一层导电金属形成在通孔的壁上，具有相对于特定蚀刻物质的预定蚀刻速率，并且第二层导电金属（13）形成在具有蚀刻的第一导电金属层上相对于比第一层大的特定蚀刻物质的速率，并且优选地延伸到通孔中。导电互连的第一层优选为铝，第一层导电金属优选为含有约1％至约100％铜的金属，其余基本上为铝，而第二层导电金属优选为铜掺杂的铝的铜含量低于第一导电层。

6. 发明授权

US5488015A Method of making an interconnect structure with an integrated low density dielectric 失效
标题翻译：制造具有集成低密度电介质的互连结构的方法
公开(公告)号：US5488015A
公开(公告)日：1996-01-30
申请号：US246432
申请日：1994-05-20
申请人： Robert H. Havemann , Shin-Puu Jeng , Bruce E. Gnade , Chih-Chen Cho
发明人： Robert H. Havemann , Shin-Puu Jeng , Bruce E. Gnade , Chih-Chen Cho
IPC分类号： H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532 , H01L21/441 , H01L21/469
CPC分类号： H01L21/02362 , H01L21/02123 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02359 , H01L21/31695 , H01L21/7682 , H01L21/76829 , H01L21/76834 , H01L23/5222 , H01L23/5226 , H01L23/5283 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , Y10S148/043 , Y10S148/118
摘要： This invention provides a semiconductor device and process for making the same with dramatically reduced capacitance between adjacent conductors and an interlayer dielectric construction which emphasizes mechanical strength, etch compatibility, and good heat transfer. This process can include applying a solution between conductors 24, and then gelling, surface modifying, and drying the solution to form an extremely porous dielectric layer 28. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric and provide mechanical strength, heat transfer, and a solid layer for via etch. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.
摘要翻译：本发明提供了一种半导体器件及其制造方法，其显着降低了相邻导体之间的电容，以及强调机械强度，蚀刻兼容性和良好热传递的层间电介质结构。该方法可以包括在导体24之间施加溶液，然后将溶液凝胶化，表面改性和干燥以形成极其多孔的介电层28.多孔介质层30可形成在多孔层28之上，多孔层28可以完成层间电介质，并提供机械强度，热传递和用于通孔蚀刻的固体层。公开了一种用于产生多孔介电层的新方法，其可以在真空或环境压力下完成，但是在干燥期间导致电介质的孔隙率，孔径和收缩相当于仅通过在超临界压力下干燥凝胶可获得的电介质层。

7. 发明授权

US5403759A Method of making thin film transistor and a silicide local interconnect 失效
标题翻译：制造薄膜晶体管和硅化物局部互连的方法
公开(公告)号：US5403759A
公开(公告)日：1995-04-04
申请号：US955942
申请日：1992-10-02
申请人： Robert H. Havemann
发明人： Robert H. Havemann
IPC分类号： H01L21/768 , H01L27/11 , H01L21/265
CPC分类号： H01L27/1108 , H01L21/76889 , H01L21/76895 , Y10S257/903
摘要： A method of fabricating a transistor on a wafer including; forming a doped transistor body 42 on top of an insulator 34; doping source/drain regions in the transistor body; forming a gate oxide 44 on top of the transistor body; forming sidewall spacers along the transistor body; depositing a metal layer over the transistor body; forming an amorphous silicon layer over the metal layer, the amorphous silicon layer patterned in a gate and a local interconnect configuration; annealing to form silicided regions above the source/drain regions within the transistor body, and where the metal layer reacts with the amorphous silicon layer to create a silicided gate 50 and a silicided local interconnect 50; and etching unsilicided portions of the metal layer to leave silicided source/drain regions, a silicided gate, and a silicided local interconnect.
摘要翻译：一种在晶片上制造晶体管的方法，包括：在绝缘体34的顶部上形成掺杂晶体管体42; 晶体管体中的掺杂源极/漏极区域; 在晶体管本体的顶部形成栅极氧化物44; 沿着晶体管本体形成侧壁间隔物; 在所述晶体管本体上沉积金属层; 在所述金属层上形成非晶硅层，所述非晶硅层以栅极和局部互连配置构图; 退火以在晶体管体内的源极/漏极区之上形成硅化物区域，并且其中金属层与非晶硅层反应以产生硅化栅极50和硅化局部互连50; 并且蚀刻金属层的非硅化部分以留下硅化物源极/漏极区域，硅化栅极和硅化局部互连。

8. 发明授权

US5395798A Refractory metal silicide deposition process 失效
$Refractory metal silicide deposition process$
标题翻译：耐火金属硅化物沉积工艺
公开(公告)号：US5395798A
公开(公告)日：1995-03-07
申请号：US812241
申请日：1991-12-19
申请人： Robert H. Havemann
发明人： Robert H. Havemann
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/441
CPC分类号： H01L21/28518 , H01L21/76838 , Y10S148/147
摘要： A method for forming a refractory metal silicide on a semiconductor device is disclosed. The method comprises the steps of depositing a layer of refractory metal on the device and reacting the layer with nitrogen. The reaction is accomplished at a partial pressure of nitrogen greater than one atmosphere. The disclosed process allows thin layers of low resistance silicide to be formed for use as an ohmic contact while also forming a nitride layer for use as a device-to-device interconnection.
摘要翻译：公开了一种在半导体器件上形成难熔金属硅化物的方法。该方法包括以下步骤：在该装置上沉积难熔金属层并使该层与氮反应。反应在大于1个大气压的氮气分压下完成。所公开的方法允许形成薄层的低电阻硅化物以用作欧姆接触，同时还形成用作器件到器件互连的氮化物层。

9. 发明授权

US5252502A Method of making MOS VLSI semiconductor device with metal gate 失效
标题翻译：制造具有金属栅极的MOS VLSI半导体器件的方法
公开(公告)号：US5252502A
公开(公告)日：1993-10-12
申请号：US924209
申请日：1992-08-03
申请人： Robert H. Havemann
发明人： Robert H. Havemann
IPC分类号： H01L21/336 , H01L29/423 , H01L21/265 , H01L21/44
CPC分类号： H01L29/66757 , H01L29/42384
摘要： This is a method of fabricating a transistor on a wafer. The method comprises: forming an oxide layer 40 on a doped silicon layer 32; depositing a first resist over the oxide 40 and patterning the resist with a gate oxide configuration having a predetermined gate oxide length; etching to remove portions of the oxide layer 40 to expose portions of the silicon layer 32 using the resist as a mask; depositing a metal layer 42 over remaining portions of the oxide layer and exposed portions of the silicon layer; annealing the wafer to react portions of the metal layer with exposed portions of the silicon layer to form a metal silicide 44; depositing a second resist over the metal and patterning the second resist with a gate configuration having a gate length A smaller than the gate oxide length B; etching the metal to form a metal gate 42 and exposing portions of gate oxide; and implanting dopant adjacent the gate through the exposed gate oxide to provide source/drain regions 38 aligned to edges of the gate, utilizing the metal gate 42 as a mask to substantially prevent doping underneath the gate, whereby the gate need not be precisely centered on the gate oxide and thus difficulties in alignment are substantially eliminated.
摘要翻译：这是在晶片上制造晶体管的方法。该方法包括：在掺杂硅层32上形成氧化物层40; 在氧化物40上沉积第一抗蚀剂，并以具有预定栅极氧化物长度的栅极氧化物构型图案化抗蚀剂; 蚀刻以除去氧化物层40的部分，以使用抗蚀剂作为掩模来露出硅层32的部分; 在氧化物层的剩余部分和硅层的暴露部分上沉积金属层42; 退火晶片以使金属层的部分与硅层的暴露部分反应以形成金属硅化物44; 在所述金属上沉积第二抗蚀剂并且以栅极长度A小于所述栅极氧化物长度B的栅极配置图案化所述第二抗蚀剂; 蚀刻金属以形成金属栅极42并暴露栅极氧化物的部分; 以及通过所述暴露的栅极氧化物在所述栅极附近注入掺杂剂以提供与所述栅极的边缘对准的源极/漏极区域38，利用所述金属栅极42作为掩模，以基本上防止在所述栅极下面的掺杂，由此所述栅极不需要精确地居中在栅极氧化物因此基本上消除了对准困难。

10. 发明授权

US4635344A Method of low encroachment oxide isolation of a semiconductor device 失效
标题翻译：半导体器件的低侵蚀氧化物隔离方法
公开(公告)号：US4635344A
公开(公告)日：1987-01-13
申请号：US642320
申请日：1984-08-20
申请人： Robert H. Havemann
发明人： Robert H. Havemann
IPC分类号： H01L21/76 , H01L21/316 , H01L21/762
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/31662 , H01L21/76213
摘要： A low temperature, low encroachment isolation technique using differential oxidation results in an isolated semiconductor body having an N+ substrate (12) and an N epi layer (14) forming a mesa. N+ implants (22a) and (22b) are implanted on opposite sides of the mesa. Oxide is grown over the surface of the device with differential oxidation thus resulting in thick regions (24) over the N+ dopant regions and a thin region (26) over the undopant mesa region.
摘要翻译：使用差分氧化的低温，低侵入隔离技术导致具有形成台面的N +衬底（12）和N外延层（14）的隔离半导体本体。 N +植入物（22a）和（22b）植入台面的相对侧。氧化物在器件的表面上生长，具有差异氧化，从而在N +掺杂剂区域上形成厚区域（24），在未掺杂的台面区域上形成薄的区域（26）。

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