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    • 4. 发明申请
    • Deposition apparatuses
    • 沉积装置
    • US20060231016A1
    • 2006-10-19
    • US11471106
    • 2006-06-19
    • Eric BlomileyNirmal RamaswamyRoss DandoJoel DrewesAlan ColwellEduardo Tovar
    • Eric BlomileyNirmal RamaswamyRoss DandoJoel DrewesAlan ColwellEduardo Tovar
    • C30B23/00C30B25/00C30B28/12C30B28/14
    • H01L21/67248C23C16/481C23C16/52C30B25/165C30B31/18
    • The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.
    • 本发明包括沉积设备,其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。 在特定方面,可以在衬底在反应室内旋转的同时测量衬底的温度。 本发明还包括沉积装置,其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制,和/或在气体流量测量时,质量流量测量装置设置在气体的位置的下游 混合 此外,本发明还包括沉积装置,其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。
    • 5. 发明申请
    • Wireless communication devices and methods of forming and operating the same
    • 无线通信设备及其形成和操作的方法
    • US20060097849A1
    • 2006-05-11
    • US11312669
    • 2005-12-19
    • Ross Dando
    • Ross Dando
    • H04Q5/22
    • G06K19/07749H01L23/49855H01L2224/16H01L2924/0102H01L2924/01079H01L2924/3025
    • The present invention relates to wireless communication devices and methods of forming and operating the same. The present invention provides a wireless communication device including a substrate having a support surface, wireless communication circuitry upon the support surface of the substrate, at least one antenna electrically coupled with the wireless communication circuitry, a conductive layer configured to interact with the antenna, and an insulative layer intermediate the conductive layer and the antenna. A method of forming a wireless communication device includes providing a substrate having a support surface, forming an antenna upon the support surface, conductively coupling wireless communication circuitry with the antenna, forming an insulative layer over at least a portion of the antenna, and providing a conductive layer over at least a portion of the insulative layer.
    • 本发明涉及无线通信装置及其形成和操作方法。 本发明提供了一种无线通信设备,其包括具有支撑表面的基板,在基板的支撑表面上的无线通信电路,与无线通信电路电耦合的至少一个天线,被配置为与天线相互作用的导电层,以及 在导电层和天线之间的绝缘层。 一种形成无线通信设备的方法包括提供具有支撑表面的基板,在支撑表面上形成天线,将无线通信电路与天线导电耦合,在天线的至少一部分上形成绝缘层,并提供 绝缘层的至少一部分上的导电层。
    • 7. 发明申请
    • Chemical vapor deposition apparatuses and deposition methods
    • 化学气相沉积装置和沉积方法
    • US20050241581A1
    • 2005-11-03
    • US11175523
    • 2005-07-05
    • Craig CarpenterRoss DandoPhilip CampbellAllen MardianJeff FussRandy Mercil
    • Craig CarpenterRoss DandoPhilip CampbellAllen MardianJeff FussRandy Mercil
    • C23C16/44C23C16/455C30B25/08C23C16/00
    • C23C16/45544C30B25/08
    • A chemical vapor deposition (CVD) apparatus includes a deposition chamber defined partly by a chamber wall. The chamber wall has an innermost surface inside the chamber and an outermost surface outside the chamber. The apparatus further includes a valve body having a seat between the innermost and outermost surfaces of the chamber wall. The chamber wall can be a lid and the valve can include a portion of the lid as at least a part of the seat. The valve body can include at least a part of a valve housing between the innermost and outermost surfaces of the chamber wall. Such a valve body can even include a portion of the chamber wall as at least part of the valve housing. The deposition apparatus can further include at least a part of a process chemical inlet to the valve body between the innermost and outermost surfaces of the chamber wall. In one example, the chamber wall can form at least a part of the chemical inlet. A deposition method includes temporarily isolating a process chemical supply line from a deposition chamber at a chamber wall of the deposition chamber. While isolated at the chamber wall, the supply line can be filled to a first pressure with chemical through a supply valve upstream from the chamber wall. The chemical can be released from the supply line into the deposition chamber at the chamber wall. The supply line can be again temporarily isolated from the deposition chamber at the chamber wall.
    • 化学气相沉积(CVD)装置包括由室壁部分地限定的沉积室。 室壁具有在腔室内的最内表面和室外的最外表面。 该装置还包括阀体,其具有在室壁的最内表面和最外表面之间的座。 室壁可以是盖子,并且阀门可以包括作为座椅的至少一部分的盖子的一部分。 阀体可以包括在室壁的最内表面和最外表面之间的阀壳的至少一部分。 这种阀体甚至可以包括作为阀壳体的至少一部分的室壁的一部分。 沉积设备还可以包括在室壁的最内表面和最外表面之间的阀体的至少一部分过程化学品入口。 在一个示例中,室壁可以形成化学品入口的至少一部分。 沉积方法包括将沉积室的沉积室临时隔离工艺化学品供应管线。 虽然在室壁处隔离,但是供应管线可以通过来自室壁上游的供应阀将化学物质填充到第一压力。 化学品可以从供应管线释放到室壁处的沉积室中。 供应管线可以再次临时从室壁处的沉积室隔离。