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1. 发明申请

US20050241581A1 Chemical vapor deposition apparatuses and deposition methods 审中-公开
标题翻译：化学气相沉积装置和沉积方法
公开(公告)号：US20050241581A1
公开(公告)日：2005-11-03
申请号：US11175523
申请日：2005-07-05
申请人： Craig Carpenter , Ross Dando , Philip Campbell , Allen Mardian , Jeff Fuss , Randy Mercil
发明人： Craig Carpenter , Ross Dando , Philip Campbell , Allen Mardian , Jeff Fuss , Randy Mercil
IPC分类号： C23C16/44 , C23C16/455 , C30B25/08 , C23C16/00
CPC分类号： C23C16/45544 , C30B25/08
摘要： A chemical vapor deposition (CVD) apparatus includes a deposition chamber defined partly by a chamber wall. The chamber wall has an innermost surface inside the chamber and an outermost surface outside the chamber. The apparatus further includes a valve body having a seat between the innermost and outermost surfaces of the chamber wall. The chamber wall can be a lid and the valve can include a portion of the lid as at least a part of the seat. The valve body can include at least a part of a valve housing between the innermost and outermost surfaces of the chamber wall. Such a valve body can even include a portion of the chamber wall as at least part of the valve housing. The deposition apparatus can further include at least a part of a process chemical inlet to the valve body between the innermost and outermost surfaces of the chamber wall. In one example, the chamber wall can form at least a part of the chemical inlet. A deposition method includes temporarily isolating a process chemical supply line from a deposition chamber at a chamber wall of the deposition chamber. While isolated at the chamber wall, the supply line can be filled to a first pressure with chemical through a supply valve upstream from the chamber wall. The chemical can be released from the supply line into the deposition chamber at the chamber wall. The supply line can be again temporarily isolated from the deposition chamber at the chamber wall.
摘要翻译：化学气相沉积（CVD）装置包括由室壁部分地限定的沉积室。室壁具有在腔室内的最内表面和室外的最外表面。该装置还包括阀体，其具有在室壁的最内表面和最外表面之间的座。室壁可以是盖子，并且阀门可以包括作为座椅的至少一部分的盖子的一部分。阀体可以包括在室壁的最内表面和最外表面之间的阀壳的至少一部分。这种阀体甚至可以包括作为阀壳体的至少一部分的室壁的一部分。沉积设备还可以包括在室壁的最内表面和最外表面之间的阀体的至少一部分过程化学品入口。在一个示例中，室壁可以形成化学品入口的至少一部分。沉积方法包括将沉积室的沉积室临时隔离工艺化学品供应管线。虽然在室壁处隔离，但是供应管线可以通过来自室壁上游的供应阀将化学物质填充到第一压力。化学品可以从供应管线释放到室壁处的沉积室中。供应管线可以再次临时从室壁处的沉积室隔离。

2. 发明申请

US20060027326A1 Semiconductor substrate processing chamber and substrate transfer chamber interfacial structure 审中-公开
标题翻译：半导体衬底处理室和衬底转移室界面结构
公开(公告)号：US20060027326A1
公开(公告)日：2006-02-09
申请号：US11208964
申请日：2005-08-22
申请人： Craig Carpenter , Ross Dando , Allen Mardian , Kevin Hamer , Raynald Cantin , Philip Campbell , Kimberly Tschepen , Randy Mercil
发明人： Craig Carpenter , Ross Dando , Allen Mardian , Kevin Hamer , Raynald Cantin , Philip Campbell , Kimberly Tschepen , Randy Mercil
IPC分类号： C23F1/00
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译：半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。在至少一个处理室和传送室之间接收界面结构。界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。界面结构包括具有延伸穿过其中的基底通道的主体。该通道包括其至少一部分基本上是金属的壁。主体包括基本上非金属和热绝缘的壁的材料周边。基本上非金属材料具有其中至少部分延伸的安装开口。

3. 发明申请

US20050028732A1 Chemical vapor deposition method 失效
标题翻译：化学气相沉积法
公开(公告)号：US20050028732A1
公开(公告)日：2005-02-10
申请号：US10912878
申请日：2004-08-06
申请人： Allen Mardian , Philip Campbell , Craig Carpenter , Randy Mercil , Sujit Sharan
发明人： Allen Mardian , Philip Campbell , Craig Carpenter , Randy Mercil , Sujit Sharan
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/45519
摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. A substrate holder is received within the chamber. At least one process chemical inlet to the deposition chamber is included. At least one of the chamber sidewall and chamber base wall includes a chamber surface having a plurality of purge gas inlets to the chamber therein. The purge gas inlets are separate from the at least one process chemical inlet. A purge gas inlet passageway is provided in fluid communication with the purge gas inlets. Further implementations, including deposition method implementations, are contemplated.
摘要翻译：化学气相沉积装置包括至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。衬底保持器容纳在腔室内。包括沉积室的至少一个工艺化学品入口。腔室侧壁和腔室底壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。吹扫气体入口与至少一个过程化学品入口分开。吹扫气体入口通道设置成与净化气体入口流体连通。考虑了包括沉积方法实现的其他实现。

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