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1. 发明授权

US4246590A Restoration of high infrared sensitivity in extrinsic silicon detectors 失效
标题翻译：在外部硅探测器中恢复高红外灵敏度
公开(公告)号：US4246590A
公开(公告)日：1981-01-20
申请号：US5535
申请日：1979-01-22
申请人： Richard N. Thomas , Timothy T. Braggins
发明人： Richard N. Thomas , Timothy T. Braggins
IPC分类号： H01L21/322 , H01L27/148 , H01L31/18 , H01L27/14
CPC分类号： H01L31/186 , H01L21/3221 , H01L27/14875 , Y02E10/50 , Y02P70/521 , Y10S257/928
摘要： A method and apparatus for removing heavy metal impurities such as gold, silver, nickel and copper from a crystalline substrate is described incorporating a damaged crystalline layer which may be formed by excessive doping to trap or getter heavy metal impurities to enhance the majority carrier lifetime of the detector material.The invention overcomes the problem of degraded responsivity in radiant energy crystalline detectors after high temperature processing, in excess of 900.degree. C., which permits surface contaminants such as gold, silver, nickel and copper to diffuse through the detector material raising the net donor density.
摘要翻译：描述了一种用于从结晶基底去除重金属杂质如金，银，镍和铜的方法和装置，该方法和装置包括可以通过过度掺杂形成的损坏的结晶层，以捕获或吸收重金属杂质以增加多数载流子寿命探测器材料。本发明克服了在高温处理后超过900℃的辐射能结晶探测器的响应度降低的问题，其允许诸如金，银，镍和铜的表面污染物通过检测器材料扩散，从而提高净供体密度。

2. 发明授权

US4416051A Restoration of high infrared sensitivity in extrinsic silicon detectors 失效
标题翻译：在外部硅探测器中恢复高红外灵敏度
公开(公告)号：US4416051A
公开(公告)日：1983-11-22
申请号：US166421
申请日：1980-07-07
申请人： Richard N. Thomas , Timothy T. Braggins
发明人： Richard N. Thomas , Timothy T. Braggins
IPC分类号： H01L21/322 , H01L21/324 , H01L27/148 , H01L31/18 , H01L21/225
CPC分类号： H01L31/186 , H01L21/3221 , H01L21/324 , H01L27/14875 , Y02E10/50 , Y02P70/521
摘要： A method and apparatus for removing heavy metal impurities such as gold, silver, nickel and copper from a crystalline substrate is described incorporating a damaged crystalline layer which may be formed by excessive doping to trap or getter heavy metal impurities to enhance the majority carrier lifetime of the detector material.The invention overcomes the problem of degraded responsivity in radiant energy crystalline detectors after high temperature processing, in excess of 900.degree. C., which permits surface contaminants such as gold, silver, nickel and copper to diffuse through the detector material raising the net donor density.
摘要翻译：描述了一种用于从结晶基底去除重金属杂质如金，银，镍和铜的方法和装置，该方法和装置包括可以通过过度掺杂形成的损坏的结晶层，以捕获或吸收重金属杂质以增加多数载流子寿命探测器材料。本发明克服了在高温处理后超过900℃的辐射能晶体探测器的响应度降低的问题，其允许诸如金，银，镍和铜的表面污染物通过检测器材料扩散，从而提高净供体密度。

3. 发明授权

US5747815A Micro-miniature ionizer for gas sensor applications and method of making micro-miniature ionizer 失效
标题翻译：用于气体传感器应用的微型离子发生器和微型离子发生器的制造方法
公开(公告)号：US5747815A
公开(公告)日：1998-05-05
申请号：US685649
申请日：1996-07-24
申请人： Robert M. Young , Carl B. Freidhoff , Timothy T. Braggins , Thomas V. Congedo
发明人： Robert M. Young , Carl B. Freidhoff , Timothy T. Braggins , Thomas V. Congedo
IPC分类号： H01J49/28 , B01D59/44 , H01J49/00
CPC分类号： H01J49/147 , H01J49/0018 , H01J49/288
摘要： A gas ionizer is provided for use in a solid state mass spectrograph for analyzing a sample of gas. The gas ionizer is located in a cavity provided in a semiconductor substrate which includes an inlet for introducing the gas to be analyzed. The gas ionizer ionizes the sample of gas drawn into the cavity through the inlet to generate an ionized sample gas. The gas ionizer generates energetic particles or photons which bombard the gas to be sampled to produce ionized gas. The energetic particles or photons can be generated by reverse-bias p-n junctions, radioactive isotopes, electron discharges, point emitters, and thermionic electron emitters. A layer of cesium chloride or cesium iodide having a low work function is formed on top of the reverse-bias p-n junction gas ionizer to increase current emitted per junction area and so that the gas ionizer can be exposed to atmospheric oxygen during storage and can operate in reduced atmosphere with no additional treatments. The cesium chloride layer and the cesium iodide layer do not readily electromigrate. A fabrication process of the mass spectrograph includes using plural masks to ensure proper exposure of resist on both flat and wall surfaces of the semiconductor surface having severe topography.
摘要翻译：提供一种用于分析气体样品的固态质谱仪中使用的气体离子发生器。气体离子发生器位于设置在半导体衬底中的空腔中，该半导体衬底包括用于引入待分析气体的入口。气体离子发生器将通过入口吸入空腔的气体样品离子化，产生离子化样品气体。气体离子发生器产生能量粒子或光子，其轰击待采样的气体以产生电离气体。高能粒子或光子可以通过反向偏置p-n结，放射性同位素，电子放电，点发射体和热离子电子发射体产生。在反向偏压pn结气体离子发生器的顶部形成一层具有低功函数的氯化铯或碘化铯，以增加每个接合面积的电流，从而使气体离子发生器在储存过程中暴露于大气中的氧气，在减少的气氛，没有额外的治疗。氯化铯层和碘化铯层不容易电解。质谱仪的制造方法包括使用多个掩模以确保抗蚀剂在具有严重形貌的半导体表面的平坦表面和壁表面上的适当曝光。

4. 发明授权

US5492867A Method for manufacturing a miniaturized solid state mass spectrograph 失效
标题翻译：制造小型化固态质谱仪的方法
公开(公告)号：US5492867A
公开(公告)日：1996-02-20
申请号：US320619
申请日：1994-10-07
申请人： Joseph C. Kotvas , Timothy T. Braggins , Robert M. Young , Carl B. Freidhoff
发明人： Joseph C. Kotvas , Timothy T. Braggins , Robert M. Young , Carl B. Freidhoff
IPC分类号： H01J49/28 , H01L21/465
CPC分类号： H01J49/0018 , H01J49/288
摘要： A method for forming a solid state mass spectrograph for analyzing a sample gas is provided in which a plurality of cavities are formed in a substrate, preferably, a semiconductor. Each of these cavities forms a chamber into which a different component of the mass spectrograph is provided. A plurality of orifices are formed between each of the cavities, forming an interconnecting passageway between each of the chambers. A dielectric layer is provided inside the cavities to serve as a separator between the substrate and electrodes to be later deposited in the cavity. An ionizer is provided in one of the cavities and an ion detector is provided in another of the cavities. The formed substrate is provided in a circuit board which contains interfacing and controlling electronics for the mass spectrograph. Preferably, the substrate is formed in two halves and the chambers are formed in a corresponding arrangement in each of the substrate halves. The substrate halves are then bonded together after the components are provided therein.
摘要翻译：提供一种用于形成用于分析样品气体的固态质谱仪的方法，其中在衬底中优选形成多个空腔，优选为半导体。这些空腔中的每一个形成一个室，其中提供质谱仪的不同组分。在每个空腔之间形成多个孔，在每个室之间形成互连通道。介质层设置在空腔内，用作基板和电极之间的隔板，以便稍后将其沉积在空腔中。其中一个空腔设有电离器，离子检测器设置在另一个空腔中。形成的基板设置在电路板中，该电路板包含用于质谱仪的接口和控制电子器件。优选地，基板形成为两半，并且所述室以相应的布置形成在每个基板半部中。然后在其中提供部件之后将基板半部结合在一起。

5. 发明授权

US5126318A Sputtering method for forming superconductive films using water vapor addition 失效
标题翻译：使用水蒸气添加形成超导膜的溅射方法
公开(公告)号：US5126318A
公开(公告)日：1992-06-30
申请号：US668579
申请日：1991-03-13
申请人： John R. Gavaler , Timothy T. Braggins
发明人： John R. Gavaler , Timothy T. Braggins
IPC分类号： C01G1/00 , C01G3/00 , C23C14/08 , C23C14/34 , H01L39/24
CPC分类号： H01L39/2435 , Y10S505/731
摘要： A superconducting film is deposited in a closed, non-baked reactor (10) containing a sputtering gas comprising O.sub.2 with H.sub.2 O vapor addition to preferably provide a total H.sub.2 O vapor pressure of between 3.times.10.sup.-3 mbar to 266.times.10.sup.-3 mbar, where a copper oxide-based target material (15) is used and the deposition substrates (16) are maintained between 550.degree. C. and 800.degree. C.

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