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1. 发明授权

US06905556B1 Method and apparatus for using surfactants in supercritical fluid processing of wafers 失效
标题翻译：在晶圆超临界流体处理中使用表面活性剂的方法和装置
公开(公告)号：US06905556B1
公开(公告)日：2005-06-14
申请号：US10306677
申请日：2002-11-27
申请人： Raashina Humayun , Patrick C. Joyce , Adrianne Kay Tipton , Krishnan Shrinivasan , Dennis W. Hess , Satyanarayana Myneni , Souvik Banerjee
发明人： Raashina Humayun , Patrick C. Joyce , Adrianne Kay Tipton , Krishnan Shrinivasan , Dennis W. Hess , Satyanarayana Myneni , Souvik Banerjee
IPC分类号： B08B7/00 , C11D7/02 , C11D7/12 , C11D11/00 , H01L21/306 , H01L21/311 , B08B3/00
CPC分类号： H01L21/02101 , B08B7/0021 , C11D7/02 , C11D7/12 , C11D11/0047 , H01L21/02063 , H01L21/31116 , H01L21/31133
摘要： A method of delivering a reagent to a wafer is provided. A solvent is provided. A set of conditions of temperature and pressure is provided to the solvent, which is sufficient to bring the solvent to supercritical conditions. A reagent is provided. A surfactant is provided, where the surfactant has a first moiety with an affinity for the solvent and a second moiety with an affinity for the reagent, where the surfactant increases the concentration of the reagent that may be carried by the solvent. The solvent, surfactant, and reagent are combined to form a solution. The solution is delivered to a supercritical process chamber, wherein a wafer is exposed to the solution in the process chamber.
摘要翻译：提供了将试剂递送到晶片的方法。提供溶剂。向溶剂提供一组温度和压力的条件，这足以使溶剂达到超临界条件。提供试剂。提供了表面活性剂，其中表面活性剂具有对溶剂具有亲和性的第一部分和对试剂具有亲和力的第二部分，其中表面活性剂增加可由溶剂承载的试剂的浓度。溶剂，表面活性剂和试剂组合形成溶液。将溶液输送到超临界处理室，其中晶片暴露于处理室中的溶液。

2. 发明授权

US06800142B1 Method for removing photoresist and post-etch residue using activated peroxide followed by supercritical fluid treatment 失效
标题翻译：使用活化的过氧化物，然后超临界流体处理去除光致抗蚀剂和蚀刻后残留物的方法
公开(公告)号：US06800142B1
公开(公告)日：2004-10-05
申请号：US10159951
申请日：2002-05-30
申请人： Adrianne Kay Tipton , Krishnan Shrinivasan , Souvik Banerjee , Raashina Humayun , Patrick Christopher Joyce
发明人： Adrianne Kay Tipton , Krishnan Shrinivasan , Souvik Banerjee , Raashina Humayun , Patrick Christopher Joyce
IPC分类号： B08B300
CPC分类号： H01L21/02101 , B08B3/08 , B08B7/0021 , B08B7/0057 , B08B7/04 , B08B2203/005 , C11D3/3947 , C11D11/0047 , G03F7/423 , G03F7/427 , H01L21/02063 , H01L21/31133 , Y10S438/906
摘要： Methods for cleaning semiconductor wafers are presented. Contaminants, particularly photoresist and post-etch residue, are removed from semiconductor wafers. A wafer or wafers is first treated with a peroxide-containing medium, for example, to oxidatively cleave bond structures of contaminants on the wafer work surface. Excitation energy is used to activate the peroxide-containing medium toward the formation of radical species. After treatment with the peroxide-containing medium, a supercritical fluid treatment is used to remove any remaining contaminants as well as to condition the wafer for subsequent processing.
摘要翻译：介绍了半导体晶圆清洗方法。从半导体晶片去除污染物，特别是光致抗蚀剂和蚀刻后残留物。首先用含过氧化物的介质处理晶片或晶片，例如氧化劈裂晶片工作表面上的污染物的结合结构。激发能量用于激活含过氧化物的介质以形成自由基物质。用含过氧化物的培养基处理后，使用超临界流体处理来除去任何剩余的污染物，以及调整晶片以用于随后的处理。

3. 发明授权

US06764552B1 Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials 有权
标题翻译：用于清洁低k材料的光致抗蚀剂和蚀刻后残留物的超临界溶液
公开(公告)号：US06764552B1
公开(公告)日：2004-07-20
申请号：US10303321
申请日：2002-11-21
申请人： Patrick C. Joyce , Adrianne Tipton , Krishnan Shrinivasan , Dennis W. Hess , Satyanarayana Myneni , Galit Levitin
发明人： Patrick C. Joyce , Adrianne Tipton , Krishnan Shrinivasan , Dennis W. Hess , Satyanarayana Myneni , Galit Levitin
IPC分类号： B08B700
CPC分类号： H01L21/02063 , B08B7/0021 , C11D7/02 , C11D7/12 , C11D11/0047 , G03F7/425 , H01L21/02101 , H01L21/31133
摘要： Disclosed formulations of supercritical solutions are useful in wafer cleaning processes. Supercritical solutions of the invention may be categorized by their chemistry, for example, basic, acidic, oxidative, and fluoride chemistries are used. Such solutions may include supercritical carbon dioxide and at least one reagent dissolved therein to facilitate removal of waste material from wafers, particularly for removing photoresist and post-etch residues from low-k materials. This reagent may include an ammonium carbonate or bicarbonate, and combinations of such reagents. The solution may include one or more co-solvents, chelating agents, surfactants, and anti-corrosion agents as well.
摘要翻译：公开的超临界溶液的制剂在晶片清洗工艺中是有用的。本发明的超临界溶液可以通过其化学分类，例如使用碱性，酸性，氧化性和氟化物。这样的溶液可以包括超临界二氧化碳和溶解在其中的至少一种试剂，以便于从晶片去除废料，特别是用于从低k材料去除光致抗蚀剂和蚀刻后残留物。该试剂可以包括碳酸铵或碳酸氢盐，以及这些试剂的组合。该溶液也可以包括一种或多种助溶剂，螯合剂，表面活性剂和防腐蚀剂。

4. 发明授权

US06848458B1 Apparatus and methods for processing semiconductor substrates using supercritical fluids 失效
标题翻译：使用超临界流体处理半导体衬底的装置和方法
公开(公告)号：US06848458B1
公开(公告)日：2005-02-01
申请号：US10067520
申请日：2002-02-05
申请人： Krishnan Shrinivasan , Souvik Banerjee , Francisco Juarez , Karen A. Reinhardt , Sanjay Gopinath
发明人： Krishnan Shrinivasan , Souvik Banerjee , Francisco Juarez , Karen A. Reinhardt , Sanjay Gopinath
IPC分类号： B08B7/00 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67057 , B08B7/0021 , Y10S134/902
摘要： The present invention pertains to a system for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems, as well as methods for implementing wafer cleaning using such a system. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity. A depressurization system provides dilution and removal of cleaning solutions under supercritical conditions. A recapture-recycle system introduces captured-purified solvents into the solvent delivery mechanism.
摘要翻译：本发明涉及用于清洁晶片的系统，其包括专门的加压，处理容器，再循环，化学添加，减压和再捕集循环子系统，以及使用这种系统实现晶片清洗的方法。溶剂递送机构将液态亚临界溶液转化为超临界清洗溶液并将其引入含有晶片或晶片的处理容器中。超临界清洗溶液通过再循环系统再循环通过处理容器。添加剂输送系统通过溶剂输送机构，处理容器或再循环系统将化学添加剂引入超临界清洗溶液。也可以向亚临界溶液中添加化学添加剂。再循环系统提供化学添加剂的有效混合，高效的清洗和工艺的均匀性。减压系统在超临界条件下提供清洗溶液的稀释和去除。回收再循环系统将捕获的纯化溶剂引入溶剂输送机构。

5. 发明授权

US07503334B1 Apparatus and methods for processing semiconductor substrates using supercritical fluids 有权
标题翻译：使用超临界流体处理半导体衬底的装置和方法
公开(公告)号：US07503334B1
公开(公告)日：2009-03-17
申请号：US11031371
申请日：2005-01-06
申请人： Krishnan Shrinivasan , Souvik Banerjee , Francisco Juarez , Karen A. Reinhardt , Sanjay Gopinath
发明人： Krishnan Shrinivasan , Souvik Banerjee , Francisco Juarez , Karen A. Reinhardt , Sanjay Gopinath
IPC分类号： B08B3/00 , B08B3/14
CPC分类号： H01L21/67057 , B08B7/0021 , Y10S134/902
摘要： A system is provided for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity. A depressurization system provides dilution and removal of cleaning solutions under supercritical conditions. A recapture-recycle system introduces captured-purified solvents into the solvent delivery mechanism.
摘要翻译：提供了一种用于清洁晶片的系统，其包括专门的加压，处理容器，再循环，化学添加，减压和再捕集循环子系统。溶剂递送机构将液态亚临界溶液转化为超临界清洗溶液并将其引入含有晶片或晶片的处理容器中。超临界清洗溶液通过再循环系统再循环通过处理容器。添加剂输送系统通过溶剂输送机构，处理容器或再循环系统将化学添加剂引入超临界清洗溶液。也可以向亚临界溶液中添加化学添加剂。再循环系统提供化学添加剂的有效混合，高效的清洗和工艺的均匀性。减压系统在超临界条件下提供清洗溶液的稀释和去除。回收再循环系统将捕获的纯化溶剂引入溶剂输送机构。

6. 发明授权

US08951348B1 Single-chamber sequential curing of semiconductor wafers 有权
标题翻译：单腔连续固化半导体晶圆
公开(公告)号：US08951348B1
公开(公告)日：2015-02-10
申请号：US13370579
申请日：2012-02-10
申请人： Krishnan Shrinivasan , Feng Wang , George Kamian , Steve Gentile , Mark Yam
发明人： Krishnan Shrinivasan , Feng Wang , George Kamian , Steve Gentile , Mark Yam
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/56 , H01L21/67109 , H01L21/67115
摘要： The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.
摘要翻译：本发明涉及半导体晶片的固化。更具体地，本发明涉及包含多个固化站的固化室，每个固化站具有一个或多个UV光源。通过在每个站中顺序地暴露于光源来固化晶片。在一些实施例中，晶片在曝光期间相对于光源保持静止。在其它实施例中，在曝光期间在光源和晶片之间存在相对运动。本发明还提供了可以通过提供对晶片温度和UV强度的独立控制来独立地调节固化材料的交联，密度和增加应力的室。

7. 发明授权

US07327948B1 Cast pedestal with heating element and coaxial heat exchanger 有权
标题翻译：带加热元件和同轴热交换器的铸座
公开(公告)号：US07327948B1
公开(公告)日：2008-02-05
申请号：US11184101
申请日：2005-07-18
申请人： Krishnan Shrinivasan , Stephen Gentile , Peter Woytowitz , Sassan Roham , George Kamian
发明人： Krishnan Shrinivasan , Stephen Gentile , Peter Woytowitz , Sassan Roham , George Kamian
IPC分类号： A21B2/00 , C23C16/00
CPC分类号： C23C16/56 , H01L21/67109 , H01L21/67115
摘要： The present invention provides a heat transfer assembly that, when coupled to an object, is capable of keeping the object at a uniform elevated temperature while removing large amounts of heat from an external source. The assembly may be contained in a pedestal for use in a UV-cure chamber. The heat transfer assembly includes a heating element to control the wafer temperature and a cooling element to remove incident IR heat from the wafer and pedestal. A heat resistant layer having a calibrated heat resistance is located between the heating and cooling elements and between the wafer and the cooling elements. The heat resistant layer is able to sustain high temperature gradient from the wafer to the coolant so that the coolant does not boil while permitting enough heat to be conducted away from the wafer to maintain the desired set-point temperature.
摘要翻译：本发明提供了一种传热组件，当与物体相连时，能够将物体保持在均匀的高温，同时从外部源除去大量的热量。组件可以容纳在用于UV固化室中的基座中。传热组件包括用于控制晶片温度的加热元件和用于从晶片和基座移除入射的IR热的冷却元件。具有校准的耐热性的耐热层位于加热和冷却元件之间以及晶片和冷却元件之间。耐热层能够承受从晶片到冷却剂的高温梯度，使得冷却剂不沸腾，同时允许足够的热量从晶片导出以保持所需的设定点温度。

8. 发明授权

US06563092B1 Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry 失效
标题翻译：使用非接触式过滤的红外线测温法测量处理室中的衬底温度
公开(公告)号：US06563092B1
公开(公告)日：2003-05-13
申请号：US09997870
申请日：2001-11-28
申请人： Krishnan Shrinivasan , Arkadiy Shimanovich , Prasad N. Gadgil
发明人： Krishnan Shrinivasan , Arkadiy Shimanovich , Prasad N. Gadgil
IPC分类号： H05B102
CPC分类号： H01L21/67248
摘要： Methods and an apparatus for providing a non-contact probe for accurately measuring the temperature of a substrate in a process chamber are disclosed. One exemplary apparatus is a processing chamber, which includes a heating source, where the heating source heats the substrate. Also included is a window maintained at a substantially constant temperature. The window allows only a first wavelength spectrum of energy emitted from the heating source to pass. In addition, the window isolates the heating source from an internal region of the processing chamber. A probe configured to detect a second wavelength spectrum of energy emitted directly from the substrate is included. The energy emitted directly from the substrate corresponds to a temperature of the substrate, and the temperature of the substrate is provided to the controller, which adjusts an intensity of the heating source based on a set point temperature for the substrate.
摘要翻译：公开了用于提供用于精确测量处理室中的衬底的温度的非接触式探针的方法和装置。一个示例性装置是处理室，其包括加热源，其中加热源加热基板。还包括保持在基本上恒定的温度下的窗口。窗口仅允许从加热源发出的能量的第一波长谱通过。此外，窗口将加热源与处理室的内部区域隔离。包括被配置为检测从衬底直接发射的能量的第二波长光谱的探针。从衬底直接发射的能量对应于衬底的温度，并且基板的温度被提供给控制器，该控制器基于衬底的设定点温度来调节加热源的强度。

9. 发明授权

US08629068B1 Multi-station sequential curing of dielectric films 有权
标题翻译：介质膜的多工位顺序固化
公开(公告)号：US08629068B1
公开(公告)日：2014-01-14
申请号：US13886694
申请日：2013-05-03
申请人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
发明人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
IPC分类号： H01L21/00 , H01L21/331 , C08F2/46 , B05D3/06
CPC分类号： H01L21/02348 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/0217 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/3105 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
摘要翻译：本发明提供了在衬底上制备低k电介质材料的改进方法。该方法涉及多次操作紫外线固化过程，其中UV强度，晶片衬底温度和其它条件可在每次操作中独立调制。在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。

10. 发明申请

US20130175005A1 ADAPTIVE HEAT TRANSFER METHODS AND SYSTEMS FOR UNIFORM HEAT TRANSFER 有权
标题翻译：自适应热传递方法和系统用于均匀热传递
公开(公告)号：US20130175005A1
公开(公告)日：2013-07-11
申请号：US13730605
申请日：2012-12-28
申请人： Keerthi Gowdaru , Krishnan Shrinivasan
发明人： Keerthi Gowdaru , Krishnan Shrinivasan
IPC分类号： F28F3/00
CPC分类号： F28F3/00 , F28F13/00 , F28F27/00 , H01L21/67109 , H01L21/67288 , H01L21/68735
摘要： Provided are adaptive heat transfer methods and systems for uniform heat transfer to and from various types of workpieces, such as workpieces employed during fabrication of semiconductor devices, displays, light emitting diodes, and photovoltaic panels. This adaptive approach allows for reducing heat transfer variations caused by deformations of workpieces. Deformation may vary in workpieces depending on types of workpieces, processing conditions, and other variables. Such deformations are hard to anticipate and may be random. Provided systems may change their configurations to account for the conformation of each new workpiece processed. Further, adjustments may be performed continuously of discretely during heat transfer. This flexibility can be employed to improve heat transfer uniformity, achieve uniform temperature profile, reduce deformation, and for various other purposes.
摘要翻译：提供了适用于传热方式和系统，用于均匀传热到各种类型的工件，例如在制造半导体器件，显示器，发光二极管和光伏面板期间采用的工件。这种自适应方法允许减少由工件的变形引起的热传递变化。取决于工件的类型，加工条件和其他变量，变形可能在工件上变化。这种变形很难预期，可能是随机的。所提供的系统可以改变它们的配置以解决所处理的每个新工件的构造。此外，可以在传热期间连续地进行调节。可以采用这种灵活性来改善传热均匀性，实现均匀的温度分布，减少变形以及各种其它目的。

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