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1. 发明授权

US5879459A Vertically-stacked process reactor and cluster tool system for atomic layer deposition 失效
标题翻译：用于原子层沉积的垂直堆叠过程反应器和簇工具系统
公开(公告)号：US5879459A
公开(公告)日：1999-03-09
申请号：US920708
申请日：1997-08-29
申请人： Prasad N. Gadgil , Thomas E. Seidel
发明人： Prasad N. Gadgil , Thomas E. Seidel
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54 , C30B25/12 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45546 , C23C16/44 , C23C16/54 , C30B25/12 , C30B25/14
摘要： A low profile, compact atomic layer deposition reactor (LP-CAR) has a low-profile body with a substrate processing region adapted to serve a single substrate or a planar array of substrates, and a valved load and unload port for substrate loading and unloading to and from the LP-CAR. The body has an inlet adapted for injecting a gas or vapor at the first end, and an exhaust exit adapted for evacuating gas and vapor at the second end. The LP-CAR has an external height no greater than any horizontal dimension, and more preferably no more than two-thirds any horizontal dimension, facilitating a unique system architecture. An internal processing region is distinguished by having a vertical extent no greater than one fourth the horizontal extent, facilitating fast gas switching. In some embodiments one substrate at a time is processed, and in other embodiments there may be multiple substrates arranged in the processing region in a planar array. The compact reactor is distinguished by individual injectors, each of which comprise a charge tube formed between a charge valve and an injection valve. The charge valve connects the charge tube to a pressure regulated supply, and the injection valve opens the charge tube into the compact reactor. Rapidly cycling the valves injects fixed mass-charges of gas or vapor into the compact reactor. Multiple such compact reactors are stacked vertically, interfaced into a vacuum handling region having a Z-axis robot and a load/unload opening.
摘要翻译：薄型原子层沉积反应器（LP-CAR）具有低轮廓体，其基底处理区域适用于单个基底或平面阵列阵列，以及用于基底装载和卸载的带阀载荷和卸载口往返于LP-CAR。主体具有适于在第一端处喷射气体或蒸气的入口和适于在第二端排出气体和蒸汽的排气出口。 LP-CAR具有不大于任何水平尺寸的外部高度，更优选不超过任何水平尺寸的三分之二，有助于独特的系统架构。内部处理区域的区别在于垂直范围不大于水平范围的四分之一，有利于快速气体切换。在一些实施例中，一次处理一个基板，并且在其他实施例中，可以在平面阵列中布置在处理区域中的多个基板。紧凑型反应器由单独的喷射器区分，每个喷射器包括在充气阀和喷射阀之间形成的进料管。充电阀将充电管连接到压力调节电源，并且注射阀将充电管打开到紧凑型反应堆中。快速循环阀将气体或蒸气的固定质量注入到紧凑型反应堆中。多个这样的紧凑型反应堆被垂直堆叠，接合到具有Z轴机器人和装载/卸载开口的真空处理区域中。

2. 发明授权

US06563092B1 Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry 失效
标题翻译：使用非接触式过滤的红外线测温法测量处理室中的衬底温度
公开(公告)号：US06563092B1
公开(公告)日：2003-05-13
申请号：US09997870
申请日：2001-11-28
申请人： Krishnan Shrinivasan , Arkadiy Shimanovich , Prasad N. Gadgil
发明人： Krishnan Shrinivasan , Arkadiy Shimanovich , Prasad N. Gadgil
IPC分类号： H05B102
CPC分类号： H01L21/67248
摘要： Methods and an apparatus for providing a non-contact probe for accurately measuring the temperature of a substrate in a process chamber are disclosed. One exemplary apparatus is a processing chamber, which includes a heating source, where the heating source heats the substrate. Also included is a window maintained at a substantially constant temperature. The window allows only a first wavelength spectrum of energy emitted from the heating source to pass. In addition, the window isolates the heating source from an internal region of the processing chamber. A probe configured to detect a second wavelength spectrum of energy emitted directly from the substrate is included. The energy emitted directly from the substrate corresponds to a temperature of the substrate, and the temperature of the substrate is provided to the controller, which adjusts an intensity of the heating source based on a set point temperature for the substrate.
摘要翻译：公开了用于提供用于精确测量处理室中的衬底的温度的非接触式探针的方法和装置。一个示例性装置是处理室，其包括加热源，其中加热源加热基板。还包括保持在基本上恒定的温度下的窗口。窗口仅允许从加热源发出的能量的第一波长谱通过。此外，窗口将加热源与处理室的内部区域隔离。包括被配置为检测从衬底直接发射的能量的第二波长光谱的探针。从衬底直接发射的能量对应于衬底的温度，并且基板的温度被提供给控制器，该控制器基于衬底的设定点温度来调节加热源的强度。

3. 发明授权

US07365005B1 Method for filling of a recessed structure of a semiconductor device 失效
标题翻译：用于填充半导体器件的凹陷结构的方法
公开(公告)号：US07365005B1
公开(公告)日：2008-04-29
申请号：US11159999
申请日：2005-06-22
申请人： Prasad N. Gadgil
发明人： Prasad N. Gadgil
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , C23C16/045 , H01L21/28562 , H01L21/32115 , H01L21/32135 , H01L21/7684
摘要： This invention relates to process sequence by high-speed atomic layer chemical vapor processing that includes deposition for diffusion barriers in the etched features on substrate followed by gap fill and subsequent in-situ removal of the blanket films on the top by plasma enhanced vapor phase processes. The apparatus and process sequences employed in these processing scheme allows the practitioner to complete all vapor phase process sequences of diffusion barrier deposition, gap fill and planarization of copper and diffusion barrier planarization. In case of copper metallization scheme, vapor phase gap fill can be employed to replace electrochemical deposition of copper and removal of copper and the diffusion barrier by vapor phase reactions can replace chemical-mechanical-polishing. Furthermore, such a processing scheme can be employed to deposit gate level dielectric layer, shallow trench isolation and also to form first metal contact plugs with a suitable barrier at the front end of line processing.
摘要翻译：本发明涉及通过高速原子层化学气相处理的工艺顺序，其包括在衬底上的蚀刻特征中的扩散阻挡层的沉积，然后进行间隙填充并随后通过等离子体增强的气相工艺在顶部去除覆盖膜。在这些处理方案中使用的装置和处理顺序允许从业者完成扩散阻挡层沉积，间隙填充和铜的平坦化以及扩散势垒平坦化的所有气相工艺序列。在铜金属化方案的情况下，可以采用气相填充来代替铜的电化学沉积和铜的去除，并且通过气相反应的扩散阻挡可以代替化学机械抛光。此外，可以采用这种处理方案来沉积栅极电介质层，浅沟槽隔离，并且还可以在线处理的前端形成具有合适屏障的第一金属接触塞。

4. 发明授权

US06174377B1 Processing chamber for atomic layer deposition processes 失效
公开(公告)号：US06174377B1
公开(公告)日：2001-01-16
申请号：US09225081
申请日：1999-01-04
申请人： Kenneth Doering , Carl J. Galewski , Prasad N. Gadgil , Thomas E. Seidel
发明人： Kenneth Doering , Carl J. Galewski , Prasad N. Gadgil , Thomas E. Seidel
IPC分类号： C23C1600
CPC分类号： C30B25/14 , C23C16/44 , C23C16/4412 , C23C16/45544 , C23C16/45546 , C23C16/4583 , C23C16/46 , C23C16/54 , C30B25/12 , H01J37/3244 , H01L21/67167 , H01L21/67178 , H01L21/6719
摘要： A processing station adaptable to standard cluster tools has a vertically-translatable pedestal having an upper wafer-support surface including a heater plate adapted to be plugged into a unique feedthrough in the pedestal. At a lower position for the pedestal wafers may be transferred to and from the processing station, and at an upper position for the pedestal the pedestal forms an annular pumping passage with a lower circular opening in a processing chamber. A removable, replaceable ring at the lower opening of the processing chamber allows process pumping speed to be tailored for different processes by replacing the ring. In some embodiments the pedestal also has a surrounding shroud defining an annular pumping passage around the pedestal. A unique two-zone heater plate is adapted to the top of the pedestal, and connects to a unique feedthrough allowing heater plates to be quickly and simply replaced. In some embodiments the top of the processing chamber is removable allowing users to remove either pedestals or heater assemblies. Or both, through the open top of a processing station. In preferred embodiments the system is adapted to atomic layer deposition processing.

5. 发明申请

US20100213643A1 RAPID SYNTHESIS OF POLYCRYSTALLINE SILICON SHEETS FOR PHOTO-VOLTAIC SOLAR CELL MANUFACTURING 审中-公开
标题翻译：用于光伏太阳能电池制造的多晶硅片快速合成
公开(公告)号：US20100213643A1
公开(公告)日：2010-08-26
申请号：US12713003
申请日：2010-02-25
申请人： Prasad N. Gadgil , Rajat Roychoudhury , Mushtaq Mulla , Indrajit Banerjee
发明人： Prasad N. Gadgil , Rajat Roychoudhury , Mushtaq Mulla , Indrajit Banerjee
IPC分类号： C01B33/025 , B01J19/00 , B01J19/08 , B28B1/14
CPC分类号： C30B29/06 , C30B11/005 , C30B28/06 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A simple and direct methodology for synthesis of polycrystalline silicon sheets is demonstrated in our invention, where silica (SiO2) and elemental carbon (C) are reacted under RF or MW excitation. These polycrystalline silicon sheets can be directly used as feedstock/substrates for low cost photovoltaic solar cell fabrication. Other techniques, such as textured polycrystalline silicon substrate formation, in situ doping, and in situ formation of p-n junctions, are described, which make use of processing equipments and scheme setups of various embodiments of the invention.
摘要翻译：在我们的发明中证明了用于合成多晶硅片的简单和直接的方法，其中二氧化硅（SiO 2）和元素碳（C）在RF或MW激发下反应。这些多晶硅片可以直接用作低成本光伏太阳能电池制造的原料/基材。描述了其它技术，例如纹理多晶硅衬底形成，原位掺杂和p-n结的原位形成，其利用了本发明的各种实施例的处理设备和方案设置。

6. 发明授权

US06387185B1 Processing chamber for atomic layer deposition processes 有权
公开(公告)号：US06387185B1
公开(公告)日：2002-05-14
申请号：US09764035
申请日：2001-01-16
申请人： Kenneth Doering , Carl J. Galewski , Prasad N. Gadgil , Thomas E. Seidel
发明人： Kenneth Doering , Carl J. Galewski , Prasad N. Gadgil , Thomas E. Seidel
IPC分类号： C23C1600
摘要： A processing station adaptable to standard cluster tools has a vertically-translatable pedestal having an upper wafer-support surface including a heater plate adapted to be plugged into a unique feedthrough in the pedestal. At a lower position for the pedestal wafers may be transferred to and from the processing station, and at an upper position for the pedestal the pedestal forms an annular pumping passage with a lower circular opening in a processing chamber. A removable, replaceable ring at the lower opening of the processing chamber allows process pumping speed to be tailored for different processes by replacing the ring. In some embodiments the pedestal also has a surrounding shroud defining an annular pumping passage around the pedestal. A unique two-zone heater plate is adapted to the top of the pedestal, and connects to a unique feedthrough allowing heater plates to be quickly and simply replaced. In some embodiments the top of the processing chamber is removable allowing users to remove either pedestals or heater assemblies. Or both, through the open top of a processing station. In preferred embodiments the system is adapted to atomic layer deposition processing.

7. 发明授权

US5284519A Inverted diffuser stagnation point flow reactor for vapor deposition of thin films 失效
标题翻译：反向扩散器停滞点流动反应器用于蒸镀薄膜
公开(公告)号：US5284519A
公开(公告)日：1994-02-08
申请号：US701525
申请日：1991-05-16
申请人： Prasad N. Gadgil
发明人： Prasad N. Gadgil
IPC分类号： C23C16/30 , C23C16/455 , C23C16/00
CPC分类号： C23C16/305 , C23C16/455
摘要： This invention relates to a novel inverted diffuser stagnation point flow reactor which can be used for vapor deposition of thin solid films on substrates. A metalorganic chemical vapor deposition reactor comprising a gas mixing chamber with gas entry ports into the mixing chamber; a substrate for deposition thereon of solid film; and a gas outlet for conveying gas away from the substrate, characterized by a capillary plug positioned at the base of an inverted diffuser between the mixing chamber and the substrate, the capillary plug serving to streamline the flow of gas to the substrate.
摘要翻译：本发明涉及一种新颖的反向扩散器停滞点流动反应器，其可用于在基底上蒸发薄的固体膜。一种金属有机化学气相沉积反应器，包括具有进入混合室的气体入口的气体混合室; 用于在其上沉积固体膜的基材; 以及用于将气体输送离开基底的气体出口，其特征在于，位于所述混合室和所述基底之间的反向扩散器的基部处的毛细管塞，所述毛细管塞用于将气流流向衬底。

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