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1. 发明授权

US08629068B1 Multi-station sequential curing of dielectric films 有权
标题翻译：介质膜的多工位顺序固化
公开(公告)号：US08629068B1
公开(公告)日：2014-01-14
申请号：US13886694
申请日：2013-05-03
申请人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
发明人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
IPC分类号： H01L21/00 , H01L21/331 , C08F2/46 , B05D3/06
CPC分类号： H01L21/02348 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/0217 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/3105 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
摘要翻译：本发明提供了在衬底上制备低k电介质材料的改进方法。该方法涉及多次操作紫外线固化过程，其中UV强度，晶片衬底温度和其它条件可在每次操作中独立调制。在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。

2. 发明授权

US08980769B1 Multi-station sequential curing of dielectric films 有权
标题翻译：介质膜的多工位顺序固化
公开(公告)号：US08980769B1
公开(公告)日：2015-03-17
申请号：US11977792
申请日：2007-10-25
申请人： Jason Haverkamp , Dennis Hausmann , Kevin McLaughlin , Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
发明人： Jason Haverkamp , Dennis Hausmann , Kevin McLaughlin , Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
IPC分类号： H01L21/00 , H01L21/331
CPC分类号： C23C16/56 , C23C16/345 , C23C16/401 , H01L21/02126 , H01L21/0217 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02348 , H01L21/3105 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.
摘要翻译：本发明提供了在衬底上制备低k介电材料的改进方法。该方法涉及多种操作紫外线固化方法，其中UV强度，晶片衬底温度，UV光谱分布和其它条件可以在每个操作中独立调制。可以将脉冲或甚至同时施加到同一晶片上。在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。

3. 发明授权

US08454750B1 Multi-station sequential curing of dielectric films 有权
标题翻译：介质膜的多工位顺序固化
公开(公告)号：US08454750B1
公开(公告)日：2013-06-04
申请号：US11688695
申请日：2007-03-20
申请人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
发明人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
IPC分类号： C23C16/48 , C23C16/458 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/02348 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/0217 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/3105 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
摘要翻译：本发明提供了在衬底上制备低k电介质材料的改进方法。该方法涉及多次操作紫外线固化过程，其中UV强度，晶片衬底温度和其它条件可在每次操作中独立调制。在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。

4. 发明申请

US20120222815A1 HYBRID CERAMIC SHOWERHEAD 有权
标题翻译：混合陶瓷淋浴
公开(公告)号：US20120222815A1
公开(公告)日：2012-09-06
申请号：US13411369
申请日：2012-03-02
申请人： Mohamed Sabri , Ramkishan Rao Lingampalli , Karl F. Leeser
发明人： Mohamed Sabri , Ramkishan Rao Lingampalli , Karl F. Leeser
IPC分类号： H01L21/306 , B05B15/00 , C23C16/50
CPC分类号： C23C16/45565
摘要： Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.
摘要翻译：提供了用于衬底处理花洒的混合陶瓷面板的各种实施方式。混合陶瓷花洒面板可以包括嵌入在面板的陶瓷材料内的电极以及通孔图案。相对于通孔，电极可以完全地封装在陶瓷材料内。在一些实施方案中，加热器元件也可以嵌入在混合陶瓷花洒面板内。在使用过程中，DC电压源可以与混合陶瓷花洒面板电连接。混合陶瓷面板可以容易地从衬底处理喷头中移除，以便于清洁和面板更换。

5. 发明授权

US07863784B2 Axial flux permanent magnet machines 失效
标题翻译：轴向磁通永磁机
公开(公告)号：US07863784B2
公开(公告)日：2011-01-04
申请号：US12063763
申请日：2006-08-14
申请人： Edward Failing Ritz, Jr. , John E. Bales , Tommy Long , J. Lynn Saunders , Ray Nelke , Mohamed Sabri
发明人： Edward Failing Ritz, Jr. , John E. Bales , Tommy Long , J. Lynn Saunders , Ray Nelke , Mohamed Sabri
IPC分类号： H02K23/66 , H02K11/00 , H02K21/12 , H02K21/14 , H02K19/10 , H02K19/22 , H02K1/06 , H02K1/27
CPC分类号： H02K1/141 , H02K21/18 , H02K21/24 , H02K41/03 , H02K2201/15
摘要： An electromechanical machine having a stator and a rotor, the stator including at least one stator module of N toroid shaped electromagnets, the electromagnets arranged along an arc a predetermined distance apart defining a stator arc length. Each of the electromagnets has at least one gap. The rotor includes a disc adapted to pass through the at least one gap. The disc includes a plurality of permanent magnets spaced side by side about a periphery thereof and arranged so as to have alternating north-south polarities. The permanent magnets are sized and spaced such that within the stator arc length the ratio of permanent magnets to electromagnets is N+1 to N, where N is the number of electrical excitation phases applied to the electromagnets.
摘要翻译：一种具有定子和转子的机电机械，所述定子包括N个环形电磁体的至少一个定子模块，所述电磁体沿着预定距离分开限定定子弧长度的弧线布置。每个电磁铁具有至少一个间隙。转子包括适于穿过至少一个间隙的盘。盘包括围绕其周边并排布置的多个永磁体，并且被布置为具有交替的南北极性。永久磁铁的尺寸和间隔使得在定子电弧长度内，永磁体与电磁体的比例为N + 1至N，其中N为施加到电磁体的电激励相数。

6. 外观设计

USD414870S Vital signs monitor 失效
公开(公告)号：USD414870S
公开(公告)日：1999-10-05
申请号：US81446
申请日：1998-01-02
申请人： William E. Saltzstein , Mohamed Sabri , Scott M. Burkhart , Gregory T. Semler
设计人： William E. Saltzstein , Mohamed Sabri , Scott M. Burkhart , Gregory T. Semler

7. 发明授权

US5931791A Medical patient vital signs-monitoring apparatus 失效
标题翻译：医疗病人生命体征监测仪器
公开(公告)号：US5931791A
公开(公告)日：1999-08-03
申请号：US964111
申请日：1997-11-05
申请人： William E. Saltzstein , Mohamed Sabri , Anthony P. Dobaj , Eric O. Baumann
发明人： William E. Saltzstein , Mohamed Sabri , Anthony P. Dobaj , Eric O. Baumann
IPC分类号： A61B5/00 , A61B5/0205 , A61B5/022 , A61B5/04 , A61B5/02
CPC分类号： A61B5/742 , A61B5/0022 , A61B5/0205 , A61B2560/0295 , A61B2560/0456 , A61B5/022 , A61B5/1455 , Y10S128/904
摘要： A portable multiple-vital signs monitor unit of the described apparatus is of ultra-light weight, e.g. less than one pound. In its preferred embodiment, the portable unit takes the form of a right parallelepiped enclosure the volume of which is only approximately 40 in.sup.3 having operator display and control panels and body lead jacks on its face and periphery, respectively, and providing wireless remote full-function communication with an in situ base unit with which the portable monitor may optionally be docked. The base unit communicates via a single telephone line with a remote, typically central location including a host computer and a health care provider, preferably via concurrent voice and data transmission. In its preferred embodiment, the invented apparatus includes in the portable unit the capability for diagnostic quality ECG and pulse oximetry monitoring and in its base unit the capability diagnostic quality blood pressure monitoring.
摘要翻译：所述设备的便携式多重生命体征监测单元具有超轻的重量，例如，不到一磅在其优选实施例中，便携式单元采取其平行六面体外壳的形式，其大小仅约为40英寸，分别具有操作者显示和控制面板和主体引线插孔，并且提供无线远程全功能与便携式监视器可选择地对接的原位基站单元进行通信。基本单元通过单个电话线与优选地经由并发语音和数据传输的远程通常中心位置（包括主机和医疗保健提供者）进行通信。在其优选实施例中，本发明的装置在便携式单元中包括用于诊断质量ECG和脉搏血氧饱和度监测的能力，并且在其基本单元中包括能力诊断质量血压监测。

8. 外观设计

USD427315S Vital signs monitoring unit 失效
公开(公告)号：USD427315S
公开(公告)日：2000-06-27
申请号：US81456
申请日：1998-01-02
申请人： William E. Saltzstein , Mohamed Sabri , Scott M. Burkhart , Gregory T. Semler
设计人： William E. Saltzstein , Mohamed Sabri , Scott M. Burkhart , Gregory T. Semler

9. 发明授权

US5621333A Contact device for making connection to an electronic circuit device 失效
标题翻译：用于连接到电子电路装置的接触装置
公开(公告)号：US5621333A
公开(公告)日：1997-04-15
申请号：US446020
申请日：1995-05-19
申请人： Tom Long , Mohamed Sabri , J. Lynn Saunders
发明人： Tom Long , Mohamed Sabri , J. Lynn Saunders
IPC分类号： G01R1/073 , G01R31/28 , H01L21/66
CPC分类号： G01R1/07342
摘要： A contact device having a plurality of nominally coplanar first contact elements makes electrical contact with corresponding nominally coplanar second contact elements of an electronic device when the contact device and the electronic device are positioned so that the plane of the first contact elements is substantially parallel to the plane of the second contact elements and relative displacement of the devices is effected in a direction substantially perpendicular to the plane of the first contact elements and the plane of the second contact elements. The contact device comprises a stiff substrate having a major portion with fingers projecting therefrom in cantilever fashion, each finger having a proximal end at which it is connected to the major portion of the substrate and an opposite distal end and there being one or two contact elements on the distal end of each finger. It is necessary to effect relative displacement of the devices by a distance d from first touchdown to achieve last touchdown. The substrate is dimensioned such that relative displacement of the devices by a distance d from first touchdown generates a reaction force at each contact element of about 0.1*f.+-.0.1*f, and further relative displacement by a distance of about 75 .mu.m or 5*d beyond last touchdown generates a reaction force at each contact element of about 0.9.+-.0.1*f.
摘要翻译：具有多个名义上共面的第一接触元件的接触器件当接触器件和电子器件被定位成使得第一接触元件的平面基本上平行于电子器件时，与电子器件的相应的名义上共面的第二接触元件电接触，第二接触元件的平面和器件的相对位移在基本上垂直于第一接触元件的平面和第二接触元件的平面的方向上实现。接触装置包括具有主要部分的刚性基底，其中指状物以悬臂方式从其突出，每个指状物具有近端，在该近端处连接到基底的主要部分和相对的远端，并且存在一个或两个接触元件在每个手指的远端。有必要使设备的相对位移与第一次触地之间的距离d达到最后的达阵。基板的尺寸使得设备的距离d与第一触地的相对位移在每个接触元件处产生约0.1×f +/- 0.1 * f的反作用力，并进一步相对位移约75μm的距离或超过上次触地的5 * d在每个接触元件处产生约0.9 +/- 0.1 * f的反作用力。

10. 发明授权

US10224182B2 Mechanical suppression of parasitic plasma in substrate processing chamber 有权
公开(公告)号：US10224182B2
公开(公告)日：2019-03-05
申请号：US13303386
申请日：2011-11-23
申请人： Douglas Keil , Edward Augustyniak , Karl Leeser , Mohamed Sabri
发明人： Douglas Keil , Edward Augustyniak , Karl Leeser , Mohamed Sabri
IPC分类号： H01J37/32
摘要： A system for reducing parasitic plasma in a semiconductor process comprises a first surface and a plurality of dielectric layers that are arranged between an electrode and the first surface. The first surface and the electrode have substantially different electrical potentials. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap and the third gap are selected to prevent parasitic plasma between the first surface and the electrode during the semiconductor process.

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