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1. 发明授权

US08629068B1 Multi-station sequential curing of dielectric films 有权
标题翻译：介质膜的多工位顺序固化
公开(公告)号：US08629068B1
公开(公告)日：2014-01-14
申请号：US13886694
申请日：2013-05-03
申请人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
发明人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
IPC分类号： H01L21/00 , H01L21/331 , C08F2/46 , B05D3/06
CPC分类号： H01L21/02348 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/0217 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/3105 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
摘要翻译：本发明提供了在衬底上制备低k电介质材料的改进方法。该方法涉及多次操作紫外线固化过程，其中UV强度，晶片衬底温度和其它条件可在每次操作中独立调制。在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。

2. 发明授权

US08518210B2 Purging of porogen from UV cure chamber 有权
标题翻译：从UV固化室清洗致孔剂
公开(公告)号：US08518210B2
公开(公告)日：2013-08-27
申请号：US13562421
申请日：2012-07-31
申请人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
发明人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67115 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/67017 , H01L21/6719 , H01L21/67207
摘要： An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.
摘要翻译：用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。入口部分和排气部分限定具有360°周边的环孔空间。入口挡板优选地围绕所述周边不小于180°。入口挡板可操作以将清洗气体输送到环孔空间中。排气部分可操作以将净化气体和其它物质输送出环孔空间。通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。一些实施例包括气体入口增压室和排气通道，但不包括净化环。

3. 发明授权

US08282768B1 Purging of porogen from UV cure chamber 有权
标题翻译：从UV固化室清洗致孔剂
公开(公告)号：US08282768B1
公开(公告)日：2012-10-09
申请号：US12586175
申请日：2009-09-18
申请人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
发明人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67115 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/67017 , H01L21/6719 , H01L21/67207
摘要： An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Methods and systems using a purge ring are particularly useful for purging and cleaning porogens from a UV curing chamber. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.
摘要翻译：用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。入口部分和排气部分限定具有360°周边的环孔空间。入口挡板优选地围绕所述周边不小于180°。入口挡板可操作以将清洗气体输送到环孔空间中。排气部分可操作以将净化气体和其它物质输送出环孔空间。通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。使用清洗环的方法和系统特别适用于清洗和清洁紫外线固化室中的致孔剂。一些实施例包括气体入口增压室和排气通道，但不包括净化环。

4. 发明授权

US06231716B1 Processing chamber with rapid wafer exchange 有权
标题翻译：处理室具有快速的晶片交换
公开(公告)号：US06231716B1
公开(公告)日：2001-05-15
申请号：US09188872
申请日：1998-11-09
申请人： Anthony White , Eugene Smargiassi
发明人： Anthony White , Eugene Smargiassi
IPC分类号： B65G4907
CPC分类号： H01L21/67748 , Y10S414/135 , Y10S414/137 , Y10S414/139
摘要： An apparatus for processing substrates includes a chamber, a substrate transfer element for transferring a substrate to and from the chamber, and a substrate support for receiving and holding a substrate within the chamber. The apparatus also includes multiple pins positioned and configured to be received by respective holes in the chamber bottom and moveable between a retracted position and an extended position. A pin actuation system is provided for moving the pins between the retracted position and the extended position. The pin actuation system controls the velocity at which the pins move and varies the speed of the pins by accelerating or decelerating at particular points during the pin cycle. A reduction in the cycle time is facilitated by accelerating the lift pins to relatively high speeds and then slowing the pins down prior to their arrival at locations where the substrate or wafer may be damaged. The throughput of the chamber can be increased, the likelihood of damage to the substrate can be reduced, and bouncing of the substrate while supported by the pins can be reduced.
摘要翻译：一种用于处理衬底的设备包括：室，用于将衬底传送到腔室的衬底传送元件和用于在腔室内接收和保持衬底的衬底支撑件。该装置还包括定位和构造成由腔室底部中的相应孔容纳并且可在缩回位置和延伸位置之间移动的多个销。提供销致动系统，用于在缩回位置和伸出位置之间移动销。引脚驱动系统控制引脚移动的速度，并通过在引脚周期内的特定点加速或减速来改变引脚的速度。通过将提升销加速到相对较高的速度，然后在它们到达衬底或晶片可能被损坏的位置之前将销降低速度来减轻循环时间的减少。可以提高室的通过量，可以减少对基板的损坏的可能性，并且可以减少由引脚支撑的基板的弹跳。

5. 发明授权

US08980769B1 Multi-station sequential curing of dielectric films 有权
标题翻译：介质膜的多工位顺序固化
公开(公告)号：US08980769B1
公开(公告)日：2015-03-17
申请号：US11977792
申请日：2007-10-25
申请人： Jason Haverkamp , Dennis Hausmann , Kevin McLaughlin , Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
发明人： Jason Haverkamp , Dennis Hausmann , Kevin McLaughlin , Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
IPC分类号： H01L21/00 , H01L21/331
CPC分类号： C23C16/56 , C23C16/345 , C23C16/401 , H01L21/02126 , H01L21/0217 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02348 , H01L21/3105 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.
摘要翻译：本发明提供了在衬底上制备低k介电材料的改进方法。该方法涉及多种操作紫外线固化方法，其中UV强度，晶片衬底温度，UV光谱分布和其它条件可以在每个操作中独立调制。可以将脉冲或甚至同时施加到同一晶片上。在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。

6. 发明申请

US20130160946A1 PURGING OF POROGEN FROM UV CURE CHAMBER 有权
标题翻译：从紫外线固化室中除去多孔元素
公开(公告)号：US20130160946A1
公开(公告)日：2013-06-27
申请号：US13562421
申请日：2012-07-31
申请人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
发明人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： H01L21/02
CPC分类号： H01L21/67115 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/67017 , H01L21/6719 , H01L21/67207
摘要： An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.
摘要翻译：用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。入口部分和排气部分限定具有360°周边的环孔空间。入口挡板优选地围绕所述周边不小于180°。入口挡板可操作以将清洗气体输送到环孔空间中。排气部分可操作以将净化气体和其它物质输送出环孔空间。通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。一些实施例包括气体入口增压室和排气通道，但不包括净化环。

7. 发明授权

US08283644B2 Measuring in-situ UV intensity in UV cure tool 有权
标题翻译：测量UV固化工具中的原位紫外线强度
公开(公告)号：US08283644B2
公开(公告)日：2012-10-09
申请号：US13070306
申请日：2011-03-23
申请人： Eugene Smargiassi , Boaz Kenane , James Lee , Xiaolan Chen
发明人： Eugene Smargiassi , Boaz Kenane , James Lee , Xiaolan Chen
IPC分类号： H01L21/30 , G03F7/00
CPC分类号： G01N21/33 , H01L21/67115 , H01L21/67248
摘要： Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.
摘要翻译：提供了用于辐射治疗的改进的装置和方法。在一些实施例中，用于辐射固化的半导体处理装置包括处理室和处理室外部的辐射组件。辐射组件通过腔室窗口将辐射传播到衬底保持器上的腔室中。辐射探测器不时地测量辐射强度。组件包括可操作以使可辐射致冷的冷却气体流过辐射组件的气体入口和排气口。

8. 发明申请

US20120161021A1 MEASURING IN-SITU UV INTENSITY IN UV CURE TOOL 有权
标题翻译：测量UV固化工具中的紫外线强度
公开(公告)号：US20120161021A1
公开(公告)日：2012-06-28
申请号：US13070306
申请日：2011-03-23
申请人： Eugene Smargiassi , Boaz Kenane , James Lee , Xiaolan Chen
发明人： Eugene Smargiassi , Boaz Kenane , James Lee , Xiaolan Chen
IPC分类号： G01J1/42
CPC分类号： G01N21/33 , H01L21/67115 , H01L21/67248
摘要： Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.
摘要翻译：提供了用于辐射治疗的改进的装置和方法。在一些实施例中，用于辐射固化的半导体处理装置包括处理室和处理室外部的辐射组件。辐射组件通过腔室窗口将辐射传播到衬底保持器上的腔室中。辐射探测器不时地测量辐射强度。组件包括可操作以使可辐射致冷的冷却气体流过辐射组件的气体入口和排气口。

9. 发明授权

US08454750B1 Multi-station sequential curing of dielectric films 有权
标题翻译：介质膜的多工位顺序固化
公开(公告)号：US08454750B1
公开(公告)日：2013-06-04
申请号：US11688695
申请日：2007-03-20
申请人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
发明人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
IPC分类号： C23C16/48 , C23C16/458 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/02348 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/0217 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/3105 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
摘要翻译：本发明提供了在衬底上制备低k电介质材料的改进方法。该方法涉及多次操作紫外线固化过程，其中UV强度，晶片衬底温度和其它条件可在每次操作中独立调制。在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。

10. 发明授权

US07935940B1 Measuring in-situ UV intensity in UV cure tool 有权
标题翻译：测量UV固化工具中的原位紫外线强度
公开(公告)号：US07935940B1
公开(公告)日：2011-05-03
申请号：US12008149
申请日：2008-01-08
申请人： Eugene Smargiassi
发明人： Eugene Smargiassi
IPC分类号： H01J37/00
CPC分类号： H01L21/67248 , G01N21/33 , H01L21/67115
摘要： Consistent ultraviolet (UV) intensity for a semiconductor UV cure chamber is measured in-situ with a hot pedestal in vacuum by measuring reflected UV light from a calibration substrate at a UV detector mounted in the lamp assembly. The measurement apparatus includes a UV detector, a cover that protects the detector from UV light while not in use, and a mirror disposed between the chamber window and the UV detector. Measured UV intensity from the substrate reflection and from the mirror reflection help determine a course of maintenance action to maintain wafer-to-wafer uniformity.
摘要翻译：通过在安装在灯组件中的UV检测器处测量来自校准基板的反射的UV光，在真空中通过热底座原位测量半导体UV固化室的一致的紫外（UV）强度。测量装置包括UV检测器，在不使用时保护检测器免受UV光的盖以及设置在室窗和UV检测器之间的反射镜。从基板反射和镜面反射测量的UV强度有助于确定保持晶片到晶片均匀性的维护过程。

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