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1. 发明授权

US08053365B2 Methods for forming all tungsten contacts and lines 有权
标题翻译：形成所有钨触点和线的方法
公开(公告)号：US08053365B2
公开(公告)日：2011-11-08
申请号：US11963698
申请日：2007-12-21
申请人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
发明人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
IPC分类号： H01L21/302
CPC分类号： H01L21/76843 , C23C16/30 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.
摘要翻译：提供了新的低电阻率钨膜堆叠方案和用于沉积它们的方法。膜堆叠包括用于沉积钨成核和/或体积层的基于混合的含钨/钨的化合物（例如，WC）层。根据各种实施方案，这些富钨层可用作钨接触金属化和位线中的阻挡层和/或粘合层。富含钨层的沉积包括将基底暴露于无卤素的有机金属钨前体。混合的钨/碳化钨层是一种薄的低电阻率薄膜，具有优异的粘附性，并且可以用于随后的钨丝塞或线形成。

2. 发明授权

US08367546B2 Methods for forming all tungsten contacts and lines 有权
标题翻译：形成所有钨触点和线的方法
公开(公告)号：US08367546B2
公开(公告)日：2013-02-05
申请号：US13276170
申请日：2011-10-18
申请人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
发明人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
IPC分类号： H01L21/302
CPC分类号： H01L21/76843 , C23C16/30 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.
摘要翻译：提供了新的低电阻率钨膜堆叠方案和用于沉积它们的方法。膜堆叠包括用于沉积钨成核和/或体积层的基于混合的含钨/钨的化合物（例如，WC）层。根据各种实施方案，这些富钨层可用作钨接触金属化和位线中的阻挡层和/或粘合层。富含钨层的沉积包括将基底暴露于无卤素的有机金属钨前体。混合的钨/碳化钨层是一种薄的低电阻率薄膜，具有优异的粘附性，并且可以用于随后的钨丝塞或线形成。

3. 发明申请

US20090163025A1 METHODS FOR FORMING ALL TUNGSTEN CONTACTS AND LINES 有权
标题翻译：形成所有隧道接触和线路的方法
公开(公告)号：US20090163025A1
公开(公告)日：2009-06-25
申请号：US11963698
申请日：2007-12-21
申请人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
发明人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/30 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.
摘要翻译：提供了新的低电阻率钨膜堆叠方案和用于沉积它们的方法。膜堆叠包括用于沉积钨成核和/或体积层的基于混合的含钨/钨的化合物（例如，WC）层。根据各种实施方案，这些富钨层可用作钨接触金属化和位线中的阻挡层和/或粘合层。富含钨层的沉积包括将基底暴露于无卤素的有机金属钨前体。混合的钨/碳化钨层是一种薄的低电阻率薄膜，具有优异的粘附性，并且可以用于随后的钨丝塞或线形成。

4. 发明授权

US07005372B2 Deposition of tungsten nitride 有权
标题翻译：沉积氮化钨
公开(公告)号：US07005372B2
公开(公告)日：2006-02-28
申请号：US10690492
申请日：2003-10-20
申请人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
发明人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
IPC分类号： H01L21/4763
CPC分类号： C23C16/4554 , C23C16/0272 , C23C16/34 , C23C16/45531 , C23C16/45534 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.
摘要翻译：描述了用于沉积氮化钨层的方法。该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。最初，在衬底表面上形成钨层。然后将钨层暴露于氮化剂以形成氮化钨层。形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

5. 发明授权

US08329576B2 Method for improving uniformity and adhesion of low resistivity tungsten film 有权
标题翻译：改善低电阻率钨膜的均匀性和附着力的方法
公开(公告)号：US08329576B2
公开(公告)日：2012-12-11
申请号：US12829119
申请日：2010-07-01
申请人： Lana Hiului Chan , Feng Chen , Karl B. Levy
发明人： Lana Hiului Chan , Feng Chen , Karl B. Levy
IPC分类号： H01L21/443
CPC分类号： C23C16/0281 , C23C16/02 , C23C16/06 , C23C16/45523 , H01L21/28562 , H01L21/32051
摘要： Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.
摘要翻译：提供了改善低电阻率钨膜的均匀性和粘附性的方法。通过在沉积钨体层之前将钨成核层暴露于一系列脉冲中的还原剂形成低电阻率钨膜。根据各种实施例，该方法包括以不同的流速，不同的脉冲时间和不同的间隔时间来减少代理脉冲。

6. 发明授权

US06500321B1 Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target 失效
标题翻译：通过溅射靶的几何成形来控制磁控溅射中的侵蚀特征和工艺特性
公开(公告)号：US06500321B1
公开(公告)日：2002-12-31
申请号：US09519429
申请日：2000-03-02
申请人： Kaihan A. Ashtiani , Larry D. Hartsough , Richard S. Hill , Karl B. Levy , Robert M. Martinson
发明人： Kaihan A. Ashtiani , Larry D. Hartsough , Richard S. Hill , Karl B. Levy , Robert M. Martinson
IPC分类号： C23C1435
CPC分类号： H01J37/3423 , C23C14/3407 , H01J37/3405 , H01J37/347
摘要： An apparatus and method for controlling and optimizing a non-planar target shape of a sputtering magnetron system are employed to minimize the redeposition of the sputtered material and optimize target erosion. The methodology is based on the integration of sputtered material from each point of the target according to its solid angle view of the rest of the target. The prospective target's geometry is optimized by analytically comparing and evaluating the methodology's results of one target geometry against that of another geometry, or by simply altering the first geometry and recalculating and comparing the results of the first geometry against the altered geometry. The target geometries may be of many different shapes including trapezoidal, cylindrical, parabolic, and elliptical, depending upon the optimum process parameters desired. A sputtering system is developed using this methodology, having a main magnet stack, a rotating magnet, a target having selected target shapes optimized for controlling erosion, downstream magnets, a substrate, and an electric field induced plasma stream.
摘要翻译：采用用于控制和优化溅射磁控管系统的非平面目标形状的装置和方法来最小化溅射材料的再沉积并优化目标侵蚀。该方法基于从目标的每个点的溅射材料的整合，根据其目标的其余部分的立体角度视图。通过分析比较和评估一种目标几何体的结果与另一种几何结构的方法的结果，或简单地改变第一几何并重新计算并比较第一几何的结果与改变的几何结构，来优化预期目标的几何形状。取决于所需的最佳工艺参数，目标几何形状可以是许多不同的形状，包括梯形，圆柱形，抛物线形和椭圆形。使用该方法开发溅射系统，其具有主磁体堆叠，旋转磁体，具有针对控制侵蚀优化的所选目标形状的目标，下游磁体，基板和电场感应等离子体流。

7. 发明授权

US06497734B1 Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput 有权
标题翻译：用于增强半导体晶片脱气的装置和方法，以增加生产量
公开(公告)号：US06497734B1
公开(公告)日：2002-12-24
申请号：US10037026
申请日：2002-01-02
申请人： Kenneth K. Barber , Mark Fissel , Soo Yun Joh , Mukul Khosla , Karl B. Levy , Robert Martinson , Michael Meyers , Dhairya Shrivastava
发明人： Kenneth K. Barber , Mark Fissel , Soo Yun Joh , Mukul Khosla , Karl B. Levy , Robert Martinson , Michael Meyers , Dhairya Shrivastava
IPC分类号： H01L21324
CPC分类号： H01L21/67757 , H01L21/67017 , Y10S438/908 , Y10S438/909 , Y10T29/41
摘要： A multi-level shelf degas station relying on at least two heaters integrated within wafer holding shelves or slots, where the semiconductor wafers do not have direct contact with the heater shelves. The heaters provide conduction heating. In order to degas a wafer, the heater and wafer holder assembly is positioned in a sequential manner through each wafer slot to the next available slot. If a degassed wafer exists in the slot, a transfer chamber arm removes it. A loader arm then places a wafer in the available, empty slot and the stage is moved upwards to receive the wafer from the loader arm. The transfer chamber arm removes an individual wafer from the heater and wafer holder assembly allowing the removed wafer to be individually processed while the other wafers remain in the heater and wafer holder assembly. In some instances, a loader arm may also remove wafers. The remaining wafers in the heater and wafer holder assembly are subjected to further degas treatment while the wafer(s) removed by the transfer chamber arm are exposed to other process steps. Air-cooling chambers are employed to facilitate cooling the wafer slots for ease of removal and maintenance.
摘要翻译：依赖于集成在晶片保持架或狭槽内的至少两个加热器的多级货架脱气站，其中半导体晶片不与加热器搁架直接接触。加热器提供传导加热。为了使晶片脱气，加热器和晶片保持器组件以顺序的方式定位成通过每个晶片槽到下一个可用的槽。如果在槽中存在脱气的晶片，则传送室臂将其移除。然后，装载臂将晶片放置在可用的空槽中，并且台架向上移动以从装载臂接收晶片。传送室臂从加热器和晶片保持器组件移除单个晶片，允许将移除的晶片单独处理，而其它晶片保留在加热器和晶片保持器组件中。在一些情况下，装载臂也可以移除晶片。在加热器和晶片保持器组件中的剩余晶片经受进一步的脱气处理，同时通过转移室臂移除的晶片暴露于其它工艺步骤。采用空气冷却室以便于冷却晶片槽以便于去除和维护。

8. 发明授权

US06179973B2 Apparatus and method for controlling plasma uniformity across a substrate 有权
标题翻译：用于控制衬底上的等离子体均匀性的装置和方法
公开(公告)号：US06179973B2
公开(公告)日：2001-01-30
申请号：US09345466
申请日：1999-06-30
申请人： Kwok F. Lai , Andrew L. Nordquist , Kaihan A. Ashtiani , Larry D. Hartsough , Karl B. Levy
发明人： Kwok F. Lai , Andrew L. Nordquist , Kaihan A. Ashtiani , Larry D. Hartsough , Karl B. Levy
IPC分类号： C23C1434
CPC分类号： H01J37/3405
摘要： A novel hollow cathode magnetron source is disclosed. The source comprises a hollow cathode with a non-planar target. By using a magnet between the cathode and a substrate, plasma can be controlled to achieve high ionization levels, good step coverage, and good process uniformity.
摘要翻译：公开了一种新颖的空心阴极磁控管源。源包括具有非平面靶的空心阴极。通过使用阴极和衬底之间的磁体，可以控制等离子体以实现高电离水平，良好的步骤覆盖和良好的工艺均匀性。

9. 发明授权

US07262125B2 Method of forming low-resistivity tungsten interconnects 有权
标题翻译：形成低电阻钨互连的方法
公开(公告)号：US07262125B2
公开(公告)日：2007-08-28
申请号：US10815560
申请日：2004-03-31
申请人： Panya Wongsenakhum , Aaron R. Fellis , Kaihan A. Ashtiani , Karl B. Levy , Juwen Gao , Joshua Collins , Junghwan Sung , Lana Hiului Chan
发明人： Panya Wongsenakhum , Aaron R. Fellis , Kaihan A. Ashtiani , Karl B. Levy , Juwen Gao , Joshua Collins , Junghwan Sung , Lana Hiului Chan
IPC分类号： H01L21/4763
CPC分类号： C23C16/45523 , C23C16/0281 , C23C16/08 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.
摘要翻译：提供了在基板上制备低电阻率钨膜的方法和装置。方法包括使用脉冲成核层（PNL）技术在衬底上形成钨成核层并在其上沉积体钨层。用于形成钨成核层的方法包括使用含硼物质，含钨前体和任选的硅烷。所描述的方法对于需要薄的低电阻率薄膜（例如互连应用）的应用特别有用。

10. 发明授权

US06902620B1 Atomic layer deposition systems and methods 有权
标题翻译：原子层沉积系统和方法
公开(公告)号：US06902620B1
公开(公告)日：2005-06-07
申请号：US10028610
申请日：2001-12-19
申请人： Thomas R. Omstead , Karl B. Levy
发明人： Thomas R. Omstead , Karl B. Levy
IPC分类号： C23C16/455 , C23C16/54 , C30B23/00 , C30B25/00 , C30B25/02 , C30B25/14 , H01L21/00 , H01L21/687
CPC分类号： C23C16/45551 , C23C16/45565 , C23C16/54 , C30B25/02 , C30B25/14 , H01L21/6719 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： Atomic layer deposition systems and methods are disclosed utilizing a multi-wafer sequential processing chamber. The process gases are sequentially rotated among the wafer stations to deposit a portion of a total deposition thickness on each wafer at each station. A rapid rotary switching of the process gases eliminates having to divert the process gases to a system vent and provides for atomic layer film growth sufficient for high-volume production applications. Conventional chemical vapor deposition can also be performed concurrently with atomic layer deposition within the multi-wafer sequential processing chamber.
摘要翻译：公开了使用多晶片顺序处理室的原子层沉积系统和方法。处理气体在晶片工位之间依次旋转，以在每个工位上的每个晶片上沉积总沉积厚度的一部分。工艺气体的快速旋转切换消除了将工艺气体转移到系统通风口，并提供足以用于大批量生产应用的原子层膜生长。常规化学气相沉积也可以与多晶片顺序处理室内的原子层沉积同时进行。

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