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1. 发明授权

US08053365B2 Methods for forming all tungsten contacts and lines 有权
标题翻译：形成所有钨触点和线的方法
公开(公告)号：US08053365B2
公开(公告)日：2011-11-08
申请号：US11963698
申请日：2007-12-21
申请人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
发明人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
IPC分类号： H01L21/302
CPC分类号： H01L21/76843 , C23C16/30 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.
摘要翻译：提供了新的低电阻率钨膜堆叠方案和用于沉积它们的方法。膜堆叠包括用于沉积钨成核和/或体积层的基于混合的含钨/钨的化合物（例如，WC）层。根据各种实施方案，这些富钨层可用作钨接触金属化和位线中的阻挡层和/或粘合层。富含钨层的沉积包括将基底暴露于无卤素的有机金属钨前体。混合的钨/碳化钨层是一种薄的低电阻率薄膜，具有优异的粘附性，并且可以用于随后的钨丝塞或线形成。

2. 发明授权

US08367546B2 Methods for forming all tungsten contacts and lines 有权
标题翻译：形成所有钨触点和线的方法
公开(公告)号：US08367546B2
公开(公告)日：2013-02-05
申请号：US13276170
申请日：2011-10-18
申请人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
发明人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
IPC分类号： H01L21/302
CPC分类号： H01L21/76843 , C23C16/30 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.
摘要翻译：提供了新的低电阻率钨膜堆叠方案和用于沉积它们的方法。膜堆叠包括用于沉积钨成核和/或体积层的基于混合的含钨/钨的化合物（例如，WC）层。根据各种实施方案，这些富钨层可用作钨接触金属化和位线中的阻挡层和/或粘合层。富含钨层的沉积包括将基底暴露于无卤素的有机金属钨前体。混合的钨/碳化钨层是一种薄的低电阻率薄膜，具有优异的粘附性，并且可以用于随后的钨丝塞或线形成。

3. 发明申请

US20090163025A1 METHODS FOR FORMING ALL TUNGSTEN CONTACTS AND LINES 有权
标题翻译：形成所有隧道接触和线路的方法
公开(公告)号：US20090163025A1
公开(公告)日：2009-06-25
申请号：US11963698
申请日：2007-12-21
申请人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
发明人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/30 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.
摘要翻译：提供了新的低电阻率钨膜堆叠方案和用于沉积它们的方法。膜堆叠包括用于沉积钨成核和/或体积层的基于混合的含钨/钨的化合物（例如，WC）层。根据各种实施方案，这些富钨层可用作钨接触金属化和位线中的阻挡层和/或粘合层。富含钨层的沉积包括将基底暴露于无卤素的有机金属钨前体。混合的钨/碳化钨层是一种薄的低电阻率薄膜，具有优异的粘附性，并且可以用于随后的钨丝塞或线形成。

4. 发明授权

US08062977B1 Ternary tungsten-containing resistive thin films 有权
标题翻译：三元含钨电阻薄膜
公开(公告)号：US08062977B1
公开(公告)日：2011-11-22
申请号：US12363330
申请日：2009-01-30
申请人： Kaihan Ashtiani , Raashina Humayun , Girish Dixit , Anna Battaglia , Stefano Rassiga
发明人： Kaihan Ashtiani , Raashina Humayun , Girish Dixit , Anna Battaglia , Stefano Rassiga
IPC分类号： H01L21/44
CPC分类号： H01L45/126 , H01L45/06 , H01L45/1233 , H01L45/16
摘要： Heater elements made of high resistivity ternary and quaternary thin films containing three or more of W, C, O, N and Si are provided. The thin films have resistivities at least about 1000 μΩ-cm at 50 to 60 Angstroms. The ternary and quaternary films have improved stability over binary films on anneal. Methods of depositing the thin films are also provided. The methods involve depositing the film from an organometallic tungsten precursor under conditions such that a highly resistive, continuous film is formed.
摘要翻译：提供由包含W，C，O，N和Si三种或更多种的高电阻率三元和四元薄膜制成的加热元件。薄膜在50至60埃处具有至少约1000μΩ-OHgr·-cm的电阻率。三元和四元膜在退火时具有改善的二元膜的稳定性。还提供了沉积薄膜的方法。所述方法包括在有机金属钨前驱体上沉积薄膜，使得形成高电阻连续的薄膜。

5. 发明授权

US08058170B2 Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics 有权
标题翻译：沉积具有低电阻率和坚固的微粘附特性的薄钨膜的方法
公开(公告)号：US08058170B2
公开(公告)日：2011-11-15
申请号：US12407541
申请日：2009-03-19
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

6. 发明授权

US08409987B2 Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics 有权
标题翻译：沉积具有低电阻率和坚固的微粘附特性的薄钨膜的方法
公开(公告)号：US08409987B2
公开(公告)日：2013-04-02
申请号：US13244016
申请日：2011-09-23
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michal Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michal Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

7. 发明申请

US20100159694A1 METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS 有权
标题翻译：沉积具有低电阻率和稳定的微粘结特性的薄膜的方法
公开(公告)号：US20100159694A1
公开(公告)日：2010-06-24
申请号：US12407541
申请日：2009-03-19
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/285 , B05C11/00
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

8. 发明申请

US20120015518A1 METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS 有权
标题翻译：沉积具有低电阻率和稳定的微粘结特性的薄膜的方法
公开(公告)号：US20120015518A1
公开(公告)日：2012-01-19
申请号：US13244016
申请日：2011-09-23
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/283 , C23C16/455 , C23C16/52 , C23C16/06
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

9. 发明授权

US09034768B2 Depositing tungsten into high aspect ratio features 有权
标题翻译：将钨沉积成高纵横比特征
公开(公告)号：US09034768B2
公开(公告)日：2015-05-19
申请号：US12833823
申请日：2010-07-09
申请人： Anand Chandrashekar , Raashina Humayun , Michal Danek , Aaron R. Fellis , Sean Chang
发明人： Anand Chandrashekar , Raashina Humayun , Michal Danek , Aaron R. Fellis , Sean Chang
IPC分类号： H01L21/302 , C23F4/00 , C23C16/04 , C23C16/06 , H01L21/768
CPC分类号： C23F4/00 , C23C16/045 , C23C16/06 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.
摘要翻译：提供了用含钨材料填充高纵横比特征的方法和装置。该方法包括提供部分制造的半导体衬底并且在衬底表面上沉积含钨层以部分填充一个或多个高纵横比特征。该方法继续选择性地去除沉积层的一部分，使得在特征开口附近更多的材料在特征内部被移除。在某些实施方案中，可以在质量传输限制条件下进行移除，在特征内可用蚀刻剂较少，而不是靠近其开口。在引入处理室之前和/或在室内时，蚀刻剂物质被激活。在具体实施方案中，活化物质的重组在去除期间基本上受到限制和/或控制，例如在小于约250℃和/或小于约5托下进行操作。

10. 发明授权

US08623733B2 Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects 有权
标题翻译：用于沉积用于小临界尺寸触点和互连的超薄低电阻率钨膜的方法
公开(公告)号：US08623733B2
公开(公告)日：2014-01-07
申请号：US12755259
申请日：2010-04-06
申请人： Feng Chen , Raashina Humayun , Michal Danek , Anand Chandrashekar
发明人： Feng Chen , Raashina Humayun , Michal Danek , Anand Chandrashekar
IPC分类号： H01L21/20
CPC分类号： H01L23/535 , C23C16/0272 , C23C16/045 , C23C16/14 , C23C16/45523 , C23C16/52 , H01L21/28556 , H01L21/67017 , H01L21/76816 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L21/76895 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.
摘要翻译：提供了高空隙特征的无空隙钨填充的方法。根据各种实施方案，该方法包括用钨填充特征的降温化学气相沉积（CVD）工艺。在某些实施方案中，在化学气相沉积期间将工艺温度保持在小于约350℃以填充该特征。降低温度的CVD钨填料提供了改进的高纵横比特征的钨填充，为氟迁移到下层提供了改进的障碍，同时获得与标准CVD填充相似的薄膜电阻率。还提供了沉积具有低电阻率的薄钨膜的方法。根据各种实施例，所述方法包括在沉积钨体层之前对沉积的成核层进行降低温度的低电阻率处理和/或通过降低温度的CVD工艺沉积体层，然后进行高温CVD工艺。

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