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1. 发明申请

US20080156264A1 Plasma Generator Apparatus 审中-公开
标题翻译：等离子发生器装置
公开(公告)号：US20080156264A1
公开(公告)日：2008-07-03
申请号：US11616324
申请日：2006-12-27
申请人： James A. Fair , Vincent Decaux , Anirban Guha , David Cheung , John Keller , Peter Jagusch
发明人： James A. Fair , Vincent Decaux , Anirban Guha , David Cheung , John Keller , Peter Jagusch
IPC分类号： C23C16/00
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3244 , H01J37/32458 , H01J37/32467 , H01J37/32633 , H01J37/32651 , H01J2237/335
摘要： Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.
摘要翻译：提供了用于灰化工件的等离子体发生器装置的实施例。该装置包括适于在其中从其入口端到其出口端的连续气体流动的容器。容器由电介质材料制成并且适于其中流过其中的至少一种气体成分的一部分进行电离。气流分配器构造成将气流引导到容器内的区域，并且线圈围绕容器的与气流分配器引导气体流动的区域相邻的容器侧壁的至少一部分。射频发生器耦合到线圈。

2. 发明授权

US07144806B1 ALD of tantalum using a hydride reducing agent 有权
标题翻译：使用氢化物还原剂的钽的ALD
公开(公告)号：US07144806B1
公开(公告)日：2006-12-05
申请号：US10279147
申请日：2002-10-23
申请人： James A. Fair , Jungwan Sung , Nerissa Taylor
发明人： James A. Fair , Jungwan Sung , Nerissa Taylor
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/8242
CPC分类号： H01L21/76843 , C23C16/14 , C23C16/38 , C23C16/42 , C23C16/45542 , H01L21/28562
摘要： An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all of the substrate surface; using an inert gas or hydrogen plasma to purge the halogen byproducts and unused reactants; reducing the precursor to convert it to a conformal layer of tantalum or tantalum-containing material; using another purge of inert gas or hydrogen plasma to remove the halogen byproducts and unused reactants; and repeating the deposition/reduction cycles until a desired tantalum-containing material layer is achieved. An optional step of treating each newly formed surface of tantalum containing material with a nitrogen-containing agent can be added to create varying amounts of tantalum nitride.
摘要翻译： ALD方法在基底表面的小特征上沉积保形的含钽材料层。该方法包括以下主要操作：在一些或全部基板表面上沉积薄的共形和饱和的含钽前体层; 使用惰性气体或氢气等离子体清洗卤素副产物和未使用的反应物; 减少前体以将其转变成钽或含钽材料的保形层; 使用惰性气体或氢等离子体的另一吹扫来除去卤素副产物和未使用的反应物; 并重复沉积/还原循环，直到达到所需的含钽材料层。可以加入用含氮试剂处理含有钽的材料的每个新形成的表面的可选步骤，以产生不同量的氮化钽。

3. 发明授权

US07107998B2 Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus 有权
标题翻译：在CVD装置中防止和清洁含钌沉积物的方法
公开(公告)号：US07107998B2
公开(公告)日：2006-09-19
申请号：US10687318
申请日：2003-10-16
申请人： Harold F. R. Greer , James A. Fair , Junghwan Sung , Nerissa Sue Draeger
发明人： Harold F. R. Greer , James A. Fair , Junghwan Sung , Nerissa Sue Draeger
IPC分类号： B08B9/00 , C23F4/00
CPC分类号： C23G5/00 , C23C16/16 , C23C16/4405
摘要： Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhibit formation of undesired ruthenium deposits on apparatus surfaces and to remove ruthenium deposits.
摘要翻译：在钌沉积设备中提供一氧化碳气体以从设备表面清洁不需要的含钌沉积物。一氧化碳气体与设备管道和钌沉积反应室中的反应气体混合，以抑制在设备表面上形成不需要的钌沉积物并除去钌沉积物。

4. 发明授权

US07005372B2 Deposition of tungsten nitride 有权
标题翻译：沉积氮化钨
公开(公告)号：US07005372B2
公开(公告)日：2006-02-28
申请号：US10690492
申请日：2003-10-20
申请人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
发明人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
IPC分类号： H01L21/4763
CPC分类号： C23C16/4554 , C23C16/0272 , C23C16/34 , C23C16/45531 , C23C16/45534 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.
摘要翻译：描述了用于沉积氮化钨层的方法。该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。最初，在衬底表面上形成钨层。然后将钨层暴露于氮化剂以形成氮化钨层。形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

5. 发明授权

US06844258B1 Selective refractory metal and nitride capping 有权
$Selective refractory metal and nitride capping$
标题翻译：选择性难熔金属和氮化物封盖
公开(公告)号：US06844258B1
公开(公告)日：2005-01-18
申请号：US10435010
申请日：2003-05-09
申请人： James A. Fair , Robert H. Havemann , Jungwan Sung , Nerissa Taylor , Sang-Hyeob Lee , Mary Anne Plano
发明人： James A. Fair , Robert H. Havemann , Jungwan Sung , Nerissa Taylor , Sang-Hyeob Lee , Mary Anne Plano
IPC分类号： H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/28562 , H01L21/76849 , H01L21/76867 , H01L21/76883 , H01L21/76889
摘要： A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.
摘要翻译：描述了一种用于制造有效减少铜电迁移和铜扩散的难熔金属和难熔金属氮化物盖的方法。该方法包括沉积难熔金属成核层并至少氮化至难熔金属层的上部以形成难熔金属氮化物。还描述了在难熔金属沉积之前减少和清洁铜线的方法。还描述了使用体积沉积形成较厚难熔金属层的方法。

6. 发明授权

US5751019A Method and structure for reducing short circuits between overlapping conductors 失效
标题翻译：用于减少重叠导体之间的短路的方法和结构
公开(公告)号：US5751019A
公开(公告)日：1998-05-12
申请号：US350763
申请日：1994-12-06
申请人： James A. Fair
发明人： James A. Fair
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L29/04 , H01L29/76 , H01L31/112
CPC分类号： H01L27/10852 , H01L27/10808 , H01L28/40
摘要： Method and apparatus for reducing current leakage between overlapping conductive structures in a multi-layered integrated circuit device such as a thin film capacitor is described. A conductive structure operating as a raised lower electrode is preferably fashioned by step-like erosion using a photolithographic techniques atop a dielectric substrate. In accordance with this invention, the dielectric substrate itself is allowed to erode as well to space the conductive structure away from the problemmatic inner corners of the step. By so distancing such conductive structures, like electrodes, from these inside corners, even conventional deposition techniques can be used to fabricate a capacitive device of operational tolerance suitable for DRAM application without risk of unwanted electrode current leakage and possible shorting. By so separating, the capacitance of the device can be reliably increased by increasing the available three dimensional capacitor area and decreasing the film thickness rather than relying primarily on high permittivity dielectrics.
摘要翻译：描述了用于减少诸如薄膜电容器的多层集成电路装置中的重叠导电结构之间的电流泄漏的方法和装置。作为升高的下电极操作的导电结构优选地通过使用电介质基板顶部的光刻技术的阶梯状侵蚀来形成。根据本发明，允许电介质基板本身也被侵蚀，以使导电结构远离台阶的可疑内角。通过如此远离这些内角的导电结构（如电极），甚至常规沉积技术也可用于制造适用于DRAM应用的操作公差的电容性器件，而不会有不必要的电极电流泄漏和可能的短路的危险。通过这样分离，可以通过增加可用的三维电容器面积并减小膜厚度而不是主要依赖于高介电常数电介质来可靠地增加器件的电容。

7. 发明授权

US08864935B2 Plasma generator apparatus 有权
标题翻译：等离子发生器装置
公开(公告)号：US08864935B2
公开(公告)日：2014-10-21
申请号：US13493655
申请日：2012-06-11
申请人： James A. Fair , Vincent Decaux , Anirban Guha , David Cheung , John Keller , Peter Jagusch
发明人： James A. Fair , Vincent Decaux , Anirban Guha , David Cheung , John Keller , Peter Jagusch
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3244 , H01J37/32458 , H01J37/32467 , H01J37/32633 , H01J37/32651 , H01J2237/335
摘要： Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.
摘要翻译：提供了用于灰化工件的等离子体发生器装置的实施例。该装置包括适于在其中从其入口端到其出口端的连续气体流动的容器。容器由电介质材料制成并且适于其中流过其中的至少一种气体成分的一部分进行电离。气流分配器构造成将气流引导到容器内的区域，并且线圈围绕容器的与气流分配器引导气体流动的区域相邻的容器侧壁的至少一部分。射频发生器耦合到线圈。

8. 发明申请

US20080216958A1 Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same 审中-公开
标题翻译：具有预调节喷头的等离子体反应装置及其制造方法
公开(公告)号：US20080216958A1
公开(公告)日：2008-09-11
申请号：US11683124
申请日：2007-03-07
申请人： Haruhiro Harry GOTO , James A. FAIR , David CHEUNG
发明人： Haruhiro Harry GOTO , James A. FAIR , David CHEUNG
IPC分类号： C23F1/00 , B05D1/00 , H01S4/00
CPC分类号： C23C16/4404 , C23C16/45565 , C23C18/1216 , C23C18/1291 , H01J37/3244 , H01L21/67069 , Y10T29/49002
摘要： Plasma reaction apparatus having pre-seasoned showerheads and methods for pre-seasoning a showerhead of a plasma reaction apparatus are provided. In an embodiment, a method for seasoning a showerhead prior to installation in a plasma reaction apparatus comprises cleaning the showerhead, positioning the showerhead in a deposition chamber, and forming a continuous, substantially uniform protective layer on the showerhead.
摘要翻译：提供具有预调节淋浴喷头的等离子体反应装置和等离子体反应装置的喷头预处理方法。在一个实施例中，在安装在等离子体反应装置中之前调节喷头的方法包括清洁喷头，将喷头定位在沉积室中，以及在喷头上形成连续的基本均匀的保护层。

9. 发明申请

US20080156631A1 Methods of Producing Plasma in a Container 审中-公开
标题翻译：容器中等离子体的生产方法
公开(公告)号：US20080156631A1
公开(公告)日：2008-07-03
申请号：US11616326
申请日：2006-12-27
申请人： James A. Fair , Vincent Decaux , Anirban Guha , David Cheung , John Keller , Peter Jagusch
发明人： James A. Fair , Vincent Decaux , Anirban Guha , David Cheung , John Keller , Peter Jagusch
IPC分类号： H05H1/00
CPC分类号： H05H1/46 , H01J37/32357 , H01J37/32458
摘要： Methods of using a plasma generator to ash a work piece is provided. In an exemplary embodiment, the method includes flowing gas that has a gaseous component able to form plasma under conditions of radio-frequency energy excitation into the container. A proportion of the gas is directed to a first region of the container to form a higher gas density in the first region of the container and a corresponding lower gas density in a second region of the container. Sufficient energy is applied to the gas in at least the first region to excite a proportion of the gaseous component able to form plasma.
摘要翻译：提供了使用等离子体发生器来灰化工件的方法。在示例性实施例中，该方法包括使气体具有能够在射频能量激发的条件下形成等离子体的气体成分进入容器。气体的一部分被引导到容器的第一区域，以在容器的第一区域中形成更高的气体密度，并且在容器的第二区域中形成相应较低的气体密度。在至少第一区域中对气体施加足够的能量以激发能够形成等离子体的一部分气态组分。

10. 发明授权

US6010748A Method of delivering source reagent vapor mixtures for chemical vapor deposition using interiorly partitioned injector 失效
标题翻译：使用内部分隔的注射器输送用于化学气相沉积的源试剂蒸汽混合物的方法
公开(公告)号：US6010748A
公开(公告)日：2000-01-04
申请号：US17384
申请日：1998-02-03
申请人： Peter C. Van Buskirk , James A. Fair , David E. Kotecki
发明人： Peter C. Van Buskirk , James A. Fair , David E. Kotecki
IPC分类号： C23C16/44 , C23C16/455 , C23C16/40
CPC分类号： C23C16/45565 , C23C16/455
摘要： A showerhead disperser device for mixing plural vapor streams, comprising: a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume; the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof, flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing. The baffled showerhead disperser is usefully employed to enable formation of CVD thin films of highly uniform composition and thickness.
摘要翻译：一种用于混合多个蒸汽流的喷头分散装置，包括：壳体，其包括彼此间隔开的前壁和后壁以及其间的侧壁，在所述壳体内限定内部容积; 所述前壁在其中具有多个蒸汽混合物排出口，用于从其外部的所述壳体的内部容积排出混合蒸气，流动通道连接到所述壳体，以将待混合的各种流体引入到所述壳体的内部容积中; 以及安装在所述壳体的内部容积中的至少一个挡板，位于所述壳体的前壁和后壁之间，所述挡板具有与所述侧壁间隔开的边缘，以在其间形成环形流动通道，并且所述挡板具有各个流体中的至少一个在引入壳体的内部空间时被引导到其上，以将其分配在壳体的内部空间中。挡板式喷头分散机有利地用于形成高度均匀组成和厚度的CVD薄膜。

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