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    • 9. 发明授权
    • Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors
    • 用于嵌入栅极MOS晶体管的电介质前体材料的增强的无电沉积
    • US06465334B1
    • 2002-10-15
    • US09679369
    • 2000-10-05
    • Matthew S. BuynoskiPaul R. BesserPaul L. KingEric N. PatonQi Xiang
    • Matthew S. BuynoskiPaul R. BesserPaul L. KingEric N. PatonQi Xiang
    • H01L214763
    • H01L21/28194H01L21/288H01L21/31683H01L29/517H01L29/66545H01L29/66553H01L29/66583
    • High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are fabricated by forming an ultra-thin catalytic metal layer, e.g., a monolayer thick layer of Pd or Pd, on a Si-based semiconductor substrate, electrolessly plating on the catalytic layer comprising at least one refractory or lanthanum series transition metal or metal-based dielectric precursor layer, such as of Zr and/or Hf, and then reacting the precursor layer with oxygen or with oxygen and the semiconductor substrate to form the at least one high-k metal oxide or silicate. The inventive methodology prevents, or at least substantially reduces, oxygen access to the substrate surface during at least the initial stage(s) of formation of the gate insulator layer, thereby minimizing deleterious formation of oxygen-induced surface states at the semiconductor substrate/gate insulator interface.
    • 通过形成高质量的电介质层,例如由至少一种难熔或镧系列过渡金属氧化物或硅酸盐构成的高k电介质层,用作在叠层金属栅极MOS晶体管和CMOS器件中用作栅极绝缘体层 超薄催化金属层,例如在Si基半导体衬底上的单层厚的Pd或Pd层,在包含至少一种难熔或镧系过渡金属或金属基电介质前体层的催化剂层上无电镀, 例如Zr和/或Hf,然后使前体层与氧或与氧和半导体衬底反应以形成至少一种高k金属氧化物或硅酸盐。 本发明的方法在至少形成栅极绝缘体层的初始阶段期间防止或至少基本上减少氧接触到衬底表面,从而最小化半导体衬底/栅极处的氧诱导表面状态的有害形成 绝缘子接口。