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1. 发明授权

US5478774A Method of fabricating patterned-mirror VCSELs using selective growth 失效
标题翻译：使用选择性生长制造图案镜VCSEL的方法
公开(公告)号：US5478774A
公开(公告)日：1995-12-26
申请号：US261276
申请日：1994-06-15
申请人： Donald E. Ackley , Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee , Chan-Long Shieh
发明人： Donald E. Ackley , Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee , Chan-Long Shieh
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/22 , H01L21/20
CPC分类号： H01S5/18308 , H01S5/18305 , H01S5/18327 , H01S5/2214 , Y10S438/969
摘要： A method of fabricating VCSELs including the steps of epitaxially growing a first mirror stack of a first conductivity type, an active region on the first mirror stack, and a first portion of a second mirror stack of a second conductivity type on the active region. A dielectric layer is then formed on the first portion of the second mirror stack, patterned to define an operating region and a remaining portion of the second mirror stack is epitaxially grown on the first portion to form a complete second mirror stack. Portions of the second mirror stack overlying the dielectric layer are polycrystalline in formation and substantially limit the remaining portion of the second mirror stack to the operating region. The polycrystalline layers can then be removed and electrical contacts formed.
摘要翻译：一种制造VCSEL的方法，包括以下步骤：在有源区上外延生长第一导电类型的第一反射镜叠层，第一反射镜叠层上的有源区和第二导电类型的第二反射镜叠层的第一部分。然后在第二反射镜叠层的第一部分上形成电介质层，其被图案化以限定操作区域，并且在第一部分上外延生长第二反射镜叠层的剩余部分以形成完整的第二反射镜叠层。覆盖在介电层上的第二反射镜叠层的部分在形成时是多晶的，并且基本上将第二反射镜叠层的剩余部分限制到操作区域。然后可以去除多晶层并形成电接触。

2. 发明授权

US5557626A Patterned mirror VCSEL with adjustable selective etch region 失效
标题翻译：带可调选择性蚀刻区域的图案镜VCSEL
公开(公告)号：US5557626A
公开(公告)日：1996-09-17
申请号：US261272
申请日：1994-06-15
申请人： Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee
发明人： Piotr Grodzinski , Michael S. Lebby , Hsing-Chung Lee
IPC分类号： H01L21/302 , H01L21/3065 , H01S5/00 , H01S5/183 , H01S5/20 , H01S3/19
CPC分类号： H01S5/18327 , H01S5/209
摘要： Patterned-mirrors for VCSELs are fabricated by forming a first mirror stack of a plurality of pairs of relatively high and low index of refraction layers, forming an active region of aluminum-free material on the first mirror stack, and forming a second mirror stack of a plurality of pairs of relatively high and low index of refraction layers. The second mirror stack includes first and second portions of materials selected to provide different rates of etching between the first and second portions. The second portion is selectively etched to the first portion by utilizing the first portion as an etch stop.
摘要翻译：通过形成多对相对较高和较低的折射率折射率层的第一反射镜叠层来形成用于VCSEL的图形反射镜，在第一反射镜叠层上形成无铝材料的有源区，并形成第二反射镜叠层多对相对较高和较低的折射率折射率层。第二反射镜叠层包括被选择为在第一和第二部分之间提供不同的蚀刻速率的第一和第二部分材料。通过利用第一部分作为蚀刻停止，第二部分被选择性地蚀刻到第一部分。

3. 发明授权

US5530715A Vertical cavity surface emitting laser having continuous grading 失效
标题翻译：具有连续分级的垂直腔表面发射激光
公开(公告)号：US5530715A
公开(公告)日：1996-06-25
申请号：US346559
申请日：1994-11-29
申请人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/00 , H01S5/183 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3054 , H01S5/3215 , H01S5/34313
摘要： A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region. A second stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing concentrations of aluminum are disposed on the second cladding region with a second plurality of continuous gradient layers being positioned between the alternating layers of differing aluminum concentrations to dynamically change the aluminum concentration from one of the altering layers to another alternating layers.
摘要翻译：具有不同于铝浓度的铝砷化镓的交替层的分布布拉格反射镜的第一堆叠被布置在基板的表面上，其中第一多个连续梯度层位于不同铝浓度的交替层之间以动态地移动铝从交替层之一到另一个交替层的浓度。第一包层区域布置在分布布拉格反射镜的第一堆叠上。有源区设置在第一包层区上，第二包层区设置在有源区上。具有不同浓度的铝的交替铝砷化镓层的第二层布拉格反射镜布置在第二覆层区域上，第二多个连续梯度层位于不同铝浓度的交替层之间以动态地将铝浓度从另一个交替层的改变层之一。

4. 发明授权

US5446752A VCSEL with current blocking layer offset 失效
标题翻译： VCSEL具有当前阻塞层偏移
公开(公告)号：US5446752A
公开(公告)日：1995-08-29
申请号：US271534
申请日：1994-07-07
申请人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/02 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18308 , H01S5/0207 , H01S5/18327 , H01S5/1833 , H01S5/18358 , H01S5/2063 , H01S5/2222
摘要： A top-emitting vertical cavity surface emitting laser with a current blocking layer at the substrate and offset layers in the mirror stack providing an optical waveguide aligned to the injected current distribution.
摘要翻译：在衬底上具有电流阻挡层的顶发射垂直腔表面发射激光器和反射镜堆叠中的偏移层，提供与注入的电流分布对准的光波导。

5. 发明授权

US5547898A Method for p-doping of a light-emitting device 失效
标题翻译：发光装置的p掺杂方法
公开(公告)号：US5547898A
公开(公告)日：1996-08-20
申请号：US529468
申请日：1995-09-18
申请人： Piotr Grodzinski , Hsing-Chung Lee , Chan-Long Shieh
发明人： Piotr Grodzinski , Hsing-Chung Lee , Chan-Long Shieh
IPC分类号： C23C16/18 , H01L21/205 , H01S5/00 , H01S5/183 , H01S5/30 , H01L21/20
CPC分类号： H01S5/3054 , H01S5/18361
摘要： A method for controlling carbon doping levels in a Distributed Bragg Reflectors (DBRs) for a Vertical Cavity Surface Emitting Laser (VCSELs) devices is provided. A first stack of mirrors (105) is deposited on the surface (101) of the substrate (102). A first cladding region (106) is deposited on the first stack of mirrors (105). An active layer (108) is deposited on the first cladding layer (106). A second cladding layer (109) is deposited on the active layer (108). A second stack of mirrors (111) is deposited on the second cladding layer (109) having a carbon doping level controlled by ratio of Group V containing organometallic (tertiarybutylarsine) to Group III organometallics (trimethylgallium and trimethylaluminum).
摘要翻译：提供了一种用于控制用于垂直腔面发射激光器（VCSEL））的分布式布拉格反射器（DBR）中的碳掺杂水平的方法。在衬底（102）的表面（101）上沉积第一叠反射镜（105）。第一包层区域（106）沉积在第一反射镜叠层（105）上。有源层（108）沉积在第一覆层（106）上。第二覆层（109）沉积在有源层（108）上。第二堆叠反射镜（111）沉积在具有由含有有机金属（叔丁基胂）至III族有机金属（三甲基镓和三甲基铝）的V族的比例控制的碳掺杂浓度的第二包覆层上。

6. 发明授权

US5633886A Short wavelength VCSEL with Al-free active region 失效
标题翻译：具有无Al活性区域的短波长VCSEL
公开(公告)号：US5633886A
公开(公告)日：1997-05-27
申请号：US520061
申请日：1995-08-28
申请人： Jamal Ramdani , Michael S. Lebby , Hsing-Chung Lee
发明人： Jamal Ramdani , Michael S. Lebby , Hsing-Chung Lee
IPC分类号： H01S5/00 , H01S5/183 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3406 , H01S5/34326 , H01S5/3434
摘要： A short wavelength VCSEL including a mirror stack positioned on a substrate, formed of a plurality of pairs of relatively high and low index of refraction layers a second mirror stack formed of a plurality of pairs of relatively high and low index of refraction layers, an active region sandwiched between the first stack and the second stack, the active region being formed of quantum well layers of GaAsP having barrier layers of GaInP sandwiched therebetween, the quantum well and barrier layers having substantially equal and opposite lattice mismatch.
摘要翻译：一种短波长VCSEL，其包括位于基板上的反射镜堆叠，由多对相对较高和较低的折射率折射率层组成，第二反射镜叠层由多对相对较高和较低的折射率折射率层组成，区域夹在第一堆叠和第二堆叠之间，有源区域由GaAsP的量子阱层形成，其中GaInP的阻挡层夹在其间，量子阱和势垒层具有基本相等且相反的晶格失配。

7. 发明授权

US5359618A High efficiency VCSEL and method of fabrication 失效
标题翻译：高效VCSEL和制造方法
公开(公告)号：US5359618A
公开(公告)日：1994-10-25
申请号：US69812
申请日：1993-06-01
申请人： Michael S. Lebby , Chan-Long Shieh , Hsing-Chung Lee
发明人： Michael S. Lebby , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01S5/00 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18313 , H01S5/18316 , H01S5/3215 , Y10S438/911
摘要： A high efficiency vertical cavity surface emitting laser with first and second mirror stacks and an active area sandwiched therebetween. The second mirror stack is formed into a mesa with exposed end surface and outer sidewalls and a centrally located light emission region. A portion of the mesa adjacent the exposed outer sidewalls has a reduced electrical conductance so as to spread operating current from the outer sidewalls into the centrally located light emission region. The electrical conductance of the portion is reduced by oxidizing or etching the outer sidewalls.
摘要翻译：具有第一和第二反射镜叠层的高效率垂直腔表面发射激光器和夹在其间的有源区域。第二反射镜叠层形成为具有暴露的端表面和外侧壁和位于中心的发光区域的台面。邻近暴露的外侧壁的台面的一部分具有降低的电导，从而将工作电流从外侧壁扩展到中心定位的发光区域。通过氧化或蚀刻外侧壁来减小该部分的导电性。

8. 发明申请

US20110062431A1 LASER ANNEALING OF METAL OXIDE SEMICONDUCTOR ON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS 有权
标题翻译：金属氧化物半导体在温度敏感基板上的激光退火
公开(公告)号：US20110062431A1
公开(公告)日：2011-03-17
申请号：US12874145
申请日：2010-09-01
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L21/268 , H01L29/66969 , H01L29/78603 , H01L29/78693
摘要： A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of amorphous metal oxide semiconductor material, an interface of the amorphous metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of amorphous metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red radiation to improve the mobility and operating stability of the amorphous metal oxide semiconductor material while retaining at least the amorphous metal oxide semiconductor material adjacent the gate metal layer amorphous.
摘要翻译：在温度敏感的基板形成上退火金属氧化物的方法包括以下步骤：在基板结构的表面上形成温度敏感的基板并形成间隔层。金属氧化物半导体器件形成在间隔层上，该器件至少包括一层非晶金属氧化物半导体材料，非晶金属氧化物层与电介质层的界面，以及与非晶金属层相邻的栅极金属层氧化物半导体材料和界面。该方法然后包括通过用红外辐射脉冲加热相邻栅极金属层来至少部分地退火金属氧化物半导体材料层的步骤，以提高非晶金属氧化物半导体材料的迁移率和操作稳定性，同时至少保留非晶态金属氧化物半导体材料与栅极金属层相邻无定形。

9. 发明申请

US20100309940A1 HIGH POWER LASER PACKAGE WITH VAPOR CHAMBER 审中-公开
标题翻译：高功率激光包装与蒸汽室
公开(公告)号：US20100309940A1
公开(公告)日：2010-12-09
申请号：US12478190
申请日：2009-06-04
申请人： Hsing-Chung Lee
发明人： Hsing-Chung Lee
IPC分类号： H01S3/04 , F28D15/04 , F28F7/00 , H05K7/20
CPC分类号： H01S5/02469 , F28D15/0233 , H01S5/0224 , H01S5/02248 , H01S5/02284 , H01S5/02492 , H01S5/4031
摘要： A heat spreader structure includes a high power laser with an epi side and an emitting facet. A vapor chamber includes a housing defining an inner vapor cavity and a wick positioned in the vapor cavity to define an evaporation area on one side of the cavity, a condensation area on an opposite side of the cavity, and fluid communication between the condensation area and the evaporation area. A space defined between the evaporation area and the condensation area. The wick includes a porous powder sintered to inner surfaces of the sealed cavity to hold the porous powder in position. The epi side of the laser is coupled to the one side of the vapor chamber and heat removal mechanism is coupled to the opposite side of the cavity.
摘要翻译：散热器结构包括具有外延面和发射面的高功率激光器。蒸气室包括限定内部蒸汽空腔的壳体和位于蒸气空腔中的芯，以在空腔的一侧上限定蒸发区域，在空腔的相对侧上的冷凝区域和冷凝区域与冷凝区域之间的流体连通蒸发面积。在蒸发区域和冷凝区域之间限定的空间。芯包括烧结到密封腔的内表面的多孔粉末以将多孔粉末保持在适当位置。激光器的外表面耦合到蒸气室的一侧，并且散热机构联接到空腔的相对侧。

10. 发明申请

US20080169464A1 Metal-insulator- metal (MIM) devices and their methods of fabrication 有权
标题翻译：金属 - 绝缘体 - 金属（MIM）器件及其制造方法
公开(公告)号：US20080169464A1
公开(公告)日：2008-07-17
申请号：US11983205
申请日：2007-11-06
申请人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Lars Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
发明人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Lars Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
IPC分类号： H01L51/52 , G02F1/135 , H01L51/56
CPC分类号： G02F1/1365 , G02F1/167 , H01G11/48 , H01G11/56 , H01L45/00 , Y02E60/13 , Y10S438/957
摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
摘要翻译：提供具有通过液相处理方法形成的至少一个电极的MIM型的两端开关装置用于有源矩阵背板应用; 更具体地说，将具有对称电流 - 电压特性的MIM器件应用于LCD有源矩阵背板应用，并且将具有不对称电流 - 电压特性的MIM器件应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实施。特别地，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合可实现灵活显示器的高生产率，卷对卷过程。

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