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1. 发明申请

US20080169464A1 Metal-insulator- metal (MIM) devices and their methods of fabrication 有权
标题翻译：金属 - 绝缘体 - 金属（MIM）器件及其制造方法
公开(公告)号：US20080169464A1
公开(公告)日：2008-07-17
申请号：US11983205
申请日：2007-11-06
申请人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Lars Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
发明人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Lars Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
IPC分类号： H01L51/52 , G02F1/135 , H01L51/56
CPC分类号： G02F1/1365 , G02F1/167 , H01G11/48 , H01G11/56 , H01L45/00 , Y02E60/13 , Y10S438/957
摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
摘要翻译：提供具有通过液相处理方法形成的至少一个电极的MIM型的两端开关装置用于有源矩阵背板应用; 更具体地说，将具有对称电流 - 电压特性的MIM器件应用于LCD有源矩阵背板应用，并且将具有不对称电流 - 电压特性的MIM器件应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实施。特别地，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合可实现灵活显示器的高生产率，卷对卷过程。

2. 发明授权

US08222077B2 Metal-insulator-metal (MIM) devices and their methods of fabrication 有权
标题翻译：金属绝缘体金属（MIM）器件及其制造方法
公开(公告)号：US08222077B2
公开(公告)日：2012-07-17
申请号：US11983205
申请日：2007-11-06
申请人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Larŝ Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
发明人： Xiong Gong , Kaixia Yang , Gang Yu , Boo Jorgen Larŝ Nilsson , Chan-Long Shieh , Hsing-Chung Lee , Fatt Foong
IPC分类号： H01L21/28
CPC分类号： G02F1/1365 , G02F1/167 , H01G11/48 , H01G11/56 , H01L45/00 , Y02E60/13 , Y10S438/957
摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
摘要翻译：提供具有通过液相处理方法形成的至少一个电极的MIM型的两端开关装置用于有源矩阵背板应用; 更具体地说，将具有对称电流 - 电压特性的MIM器件应用于LCD有源矩阵背板应用，并且将具有不对称电流 - 电压特性的MIM器件应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实施。特别地，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合可实现灵活显示器的高生产率，卷对卷过程。

3. 发明授权

US07772589B1 High performance flexible substrate thin film transistor and method 有权
标题翻译：高性能柔性基板薄膜晶体管及方法
公开(公告)号：US07772589B1
公开(公告)日：2010-08-10
申请号：US12107720
申请日：2008-04-22
申请人： Chan-Long Shieh , Gang Yu , Hsing-Chung Lee
发明人： Chan-Long Shieh , Gang Yu , Hsing-Chung Lee
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L29/78603
摘要： A high performance thin film transistor includes a flexible substrate, a layer of metal oxide semiconductor material deposited on the flexible substrate, and a layer of self-assembled organic gate dielectric material deposited on the metal oxide semiconductor material. The metal oxide semiconductor material has high carrier mobility and is transparent. An interface is formed between the layer of metal oxide semiconductor material and the layer of organic gate dielectric material that is substantially free of reactions and Fermi level pinning. The polymer materials are not polar and do not give rise to gap state formation and interface scattering.
摘要翻译：高性能薄膜晶体管包括柔性基板，沉积在柔性基板上的金属氧化物半导体材料层，以及沉积在金属氧化物半导体材料上的自组装有机栅介质材料层。金属氧化物半导体材料具有高的载流子迁移率并且是透明的。在金属氧化物半导体材料层和基本上没有反应和费米能级钉扎之间的有机栅极介电材料层之间形成界面。聚合物材料不是极性的，不会产生间隙状态的形成和界面散射。

4. 发明申请

US20080105870A1 Two-terminal switching devices and their methods of fabrication 有权
标题翻译：两端开关器件及其制造方法
公开(公告)号：US20080105870A1
公开(公告)日：2008-05-08
申请号：US11801735
申请日：2007-05-09
申请人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
发明人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L47/00 , H01L21/00 , H01L29/04
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。这些装置可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关器件包括两个电极和位于电极之间的宽带半导体材料层。根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。阴极和阳极材料之间的功函数差异优选为至少约0.6eV。可以实现在约15V的电压范围内的至少10,000的开/关电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

5. 发明授权

US08193594B2 Two-terminal switching devices and their methods of fabrication 有权
标题翻译：两端开关器件及其制造方法
公开(公告)号：US08193594B2
公开(公告)日：2012-06-05
申请号：US13015013
申请日：2011-01-27
申请人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
发明人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L21/00 , H01L47/00 , H01L29/04
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。这些器件可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关器件包括两个电极和位于电极之间的宽带半导体材料层。根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。阴极和阳极材料之间的功函数差异优选为至少约0.6eV。可以实现在约15V的电压范围内的至少10,000的开/关电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

6. 发明申请

US20110147761A1 TWO-TERMINAL SWITCHING DEVICES AND THEIR METHODS OF FABRICATION 有权
标题翻译：两端开关器件及其制造方法
公开(公告)号：US20110147761A1
公开(公告)日：2011-06-23
申请号：US13015013
申请日：2011-01-27
申请人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
发明人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L29/12 , H01L21/28 , H01L21/20
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。这些器件可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关器件包括两个电极和位于电极之间的宽带半导体材料层。根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。阴极和阳极材料之间的功函数差异优选为至少约0.6eV。可以实现在约15V的电压范围内的至少10,000的开/关电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

7. 发明授权

US07898042B2 Two-terminal switching devices and their methods of fabrication 有权
标题翻译：两端开关器件及其制造方法
公开(公告)号：US07898042B2
公开(公告)日：2011-03-01
申请号：US11801735
申请日：2007-05-09
申请人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
发明人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L21/00 , H01L47/00 , H01L29/04
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。这些装置可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关器件包括两个电极和位于电极之间的宽带半导体材料层。根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。阴极和阳极材料之间的功函数差异优选为至少约0.6eV。可以实现在约15V的电压范围内的至少10,000的开/关电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

8. 发明申请

US20110062431A1 LASER ANNEALING OF METAL OXIDE SEMICONDUCTOR ON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS 有权
标题翻译：金属氧化物半导体在温度敏感基板上的激光退火
公开(公告)号：US20110062431A1
公开(公告)日：2011-03-17
申请号：US12874145
申请日：2010-09-01
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L21/268 , H01L29/66969 , H01L29/78603 , H01L29/78693
摘要： A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of amorphous metal oxide semiconductor material, an interface of the amorphous metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of amorphous metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red radiation to improve the mobility and operating stability of the amorphous metal oxide semiconductor material while retaining at least the amorphous metal oxide semiconductor material adjacent the gate metal layer amorphous.
摘要翻译：在温度敏感的基板形成上退火金属氧化物的方法包括以下步骤：在基板结构的表面上形成温度敏感的基板并形成间隔层。金属氧化物半导体器件形成在间隔层上，该器件至少包括一层非晶金属氧化物半导体材料，非晶金属氧化物层与电介质层的界面，以及与非晶金属层相邻的栅极金属层氧化物半导体材料和界面。该方法然后包括通过用红外辐射脉冲加热相邻栅极金属层来至少部分地退火金属氧化物半导体材料层的步骤，以提高非晶金属氧化物半导体材料的迁移率和操作稳定性，同时至少保留非晶态金属氧化物半导体材料与栅极金属层相邻无定形。

9. 发明授权

US5780321A LED display packaging with substrate removal and method of fabrication 失效
标题翻译： LED显示包装与基板去除及其制造方法
公开(公告)号：US5780321A
公开(公告)日：1998-07-14
申请号：US699263
申请日：1996-08-19
申请人： Chan-Long Shieh , Hsing-Chung Lee , Paige M. Holm
发明人： Chan-Long Shieh , Hsing-Chung Lee , Paige M. Holm
IPC分类号： H01L21/60 , G09F9/33 , H01L25/16 , H01L27/15 , H01L33/00 , H01L21/00
CPC分类号： H01L27/156 , H01L25/162 , H01L25/167 , H01L2924/0002
摘要： A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.
摘要翻译：一种发光二极管显示器封装以及制造在衬底上包括发光二极管阵列的发光二极管（LED）显示器封装的方法，所述发光二极管阵列具有布置成显示位于所述LED阵列器件的最上表面上的连接焊盘的行和列连接焊盘，具有连接到最上表面的连接焊盘的单独的硅驱动器装置，其被定位成在正确地注册时协同地与LED器件的那些耦合，使用标准C5 DCA将LED装置倒装芯片凸块结合到驱动器装置，底部填充层位于 LED设备和驱动器设备定义的空间。 LED显示器和驱动器件封装件随后选择性地去除了最初形成LED阵列的衬底。从LED显示装置发射的光通过LED装置的剩余的铟 - 镓 - 铝 - 磷化物（InGaAlP）外延层发射。

10. 发明授权

US5641611A Method of fabricating organic LED matrices 失效
标题翻译：制造有机LED矩阵的方法
公开(公告)号：US5641611A
公开(公告)日：1997-06-24
申请号：US517223
申请日：1995-08-21
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： G09F9/33 , H01L51/40 , H01L51/50 , B05D1/32 , G03C5/56
CPC分类号： H01L51/0008 , H01L51/0011 , H01L51/5012
摘要： Items of material are patterned on a substrate by forming a layer of photoresist on the substrate and a layer of metal on the photoresist. The photoresist is patterned to define an opening exposing a portion of the substrate and the metal is patterned to define an aperture smaller than the opening so as to divide the exposed surface of the substrate into shadow areas and a non-shadow area. A first material system is evaporated generally perpendicular to the aperture to form a first organic light emitting diode on the surface of the substrate in the non-shadow area and second and third material systems are evaporated at angles to the aperture to form second and third organic light emitting diodes in the shadow areas. Passivation material is evaporated perpendicularly onto the first diode and at the angle onto the second diode.
摘要翻译：通过在衬底上形成光致抗蚀剂层和光致抗蚀剂上的金属层，在衬底上图案化材料。光致抗蚀剂被图案化以限定露出衬底的一部分的开口，并且图案化金属以限定小于开口的孔，以将衬底的暴露表面划分为阴影区域和非阴影区域。第一材料系统通常垂直于孔径蒸发以在非阴影区域中在衬底的表面上形成第一有机发光二极管，并且第二和第三材料系统与孔成角度地蒸发以形成第二和第三有机阴影区域的发光二极管。钝化材料垂直地蒸发到第一二极管上并以一定角度蒸发到第二二极管上。

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