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    • 7. 发明授权
    • Negative-acting chemically amplified photoresist composition
    • 负性化学放大光致抗蚀剂组合物
    • US06576394B1
    • 2003-06-10
    • US09596098
    • 2000-06-16
    • Pingyong XuPing-Hung LuRalph R. Dammel
    • Pingyong XuPing-Hung LuRalph R. Dammel
    • G03C1492
    • G03F7/038G03F7/0045Y10S430/106Y10S430/122
    • A chemically-amplified, negative-acting, radiation-sensitive photoresist composition that is developable in an alkaline medium, the photoresist comprising: a) a phenolic film-forming polymeric binder resin having ring bonded hydroxyl groups; b) a photoacid generator that forms an acid upon exposure to radiation, in an amount sufficient to initiate crosslinking of the film-forming binder resin; c) a crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises an etherified aminoplast polymer or oligomer; d) a second crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises either 1) a hydroxy substituted- or 2) a hydroxy C1-C4 alkyl substituted-C1-C12 alkyl phenol, wherein the total amount of the crosslinking agents from steps c) and d) is an effective crosslinking amount; and e) a photoresist solvent, and a process for producing a microelectronic device utilizing such a photoresist composition.
    • 一种可在碱性介质中显影的化学放大的,负性的,辐射敏感的光致抗蚀剂组合物,光致抗蚀剂包括:a)具有环键羟基的酚醛膜形成聚合物粘合剂树脂; b)形成 暴露于辐射后的酸,其量足以引发成膜粘合剂树脂的交联; c)在暴露于通过暴露于辐射产生的步骤b)的酸暴露于酸后形成碳鎓离子的交联剂,其包含 醚化的氨基塑料聚合物或低聚物; d)第二交联剂,其暴露于通过暴露于辐射产生的步骤b)的酸形成碳鎓离子,并且其包括1)羟基取代的或2)羟基C 1 -C 4 烷基取代的C 1 -C 12烷基苯酚,其中来自步骤c)和d)的交联剂的总量是有效的交联量; ande)光致抗蚀剂溶剂,以及利用这种光致抗蚀剂组合物制造微电子器件的方法。