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1. 发明申请

US20100092895A1 SILICON-BASED ANTIREFLECTIVE COATING COMPOSITIONS 失效
标题翻译：硅基抗反射涂料组合物
公开(公告)号：US20100092895A1
公开(公告)日：2010-04-15
申请号：US12449735
申请日：2008-02-25
申请人： Ruzhi Zhang , Wookyu Kim , David J. Abdallah , PingHung Lu , Mark O. Neissor , Ralph R. Dammel , Ari Karkkainen
发明人： Ruzhi Zhang , Wookyu Kim , David J. Abdallah , PingHung Lu , Mark O. Neissor , Ralph R. Dammel , Ari Karkkainen
IPC分类号： G03F7/20 , C08G77/04 , C08G77/38
CPC分类号： C08G77/045 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3124
摘要： A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided.
摘要翻译：包含具有至少一个Si-OH基团和至少一个Si-OR基团的硅氧烷聚合物的聚合物，其中R是任选具有反应性官能团的缩合稳定基团，其中所述硅氧烷聚合物在置于溶剂中时具有重量提供了通过GPC测量的在40℃下老化1周后的平均分子量增加小于或等于50％。

2. 发明授权

US08524441B2 Silicon-based antireflective coating compositions 失效
标题翻译：硅系抗反射涂料组合物
公开(公告)号：US08524441B2
公开(公告)日：2013-09-03
申请号：US12449735
申请日：2008-02-25
申请人： Ruzhi Zhang , WooKyu Kim , David J. Abdallah , PingHung Lu , Mark O. Neisser , Ralph R. Dammel , Ari Karkkainen
发明人： Ruzhi Zhang , WooKyu Kim , David J. Abdallah , PingHung Lu , Mark O. Neisser , Ralph R. Dammel , Ari Karkkainen
IPC分类号： C09D183/04
CPC分类号： C08G77/045 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3124
摘要： A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided.
摘要翻译：包含具有至少一个Si-OH基团和至少一个Si-OR基团的硅氧烷聚合物的聚合物，其中R是任选具有反应性官能团的缩合稳定基团，其中所述硅氧烷聚合物在置于溶剂中时具有重量提供了通过GPC测量的在40℃下老化1周后的平均分子量增加小于或等于50％。

3. 发明授权

US07816071B2 Process of imaging a photoresist with multiple antireflective coatings 失效
标题翻译：用多个抗反射涂层成像光致抗蚀剂的工艺
公开(公告)号：US07816071B2
公开(公告)日：2010-10-19
申请号：US11338462
申请日：2006-01-24
申请人： David J. Abdallah , Mark O. Neisser , Ralph R. Dammel , Georg Pawlowski , John Biafore , Andrew R. Romano
发明人： David J. Abdallah , Mark O. Neisser , Ralph R. Dammel , Georg Pawlowski , John Biafore , Andrew R. Romano
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , Y10S430/151
摘要： A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.
摘要翻译：一种用于对光致抗蚀剂进行成像的方法，包括以下步骤：a）在衬底上形成多层有机抗反射涂层的叠层; b）在多层有机抗反射涂层的堆叠的上层上形成光致抗蚀剂的涂层; c）用曝光设备成像曝光光致抗蚀剂; 和d）用显影剂显影涂层。

4. 发明申请

US20100040838A1 Hardmask Process for Forming a Reverse Tone Image 审中-公开
标题翻译：形成反向色调图像的硬掩模处理
公开(公告)号：US20100040838A1
公开(公告)日：2010-02-18
申请号：US12192621
申请日：2008-08-15
申请人： David J. Abdallah , Ralph R. Dammel , Mark Neisser
发明人： David J. Abdallah , Ralph R. Dammel , Mark Neisser
IPC分类号： B44C1/22 , B32B5/00
CPC分类号： G03F7/40 , G03F7/0752 , H01L21/0273 , H01L21/0337 , H01L21/31055 , H01L21/31116 , H01L21/31138 , Y10T428/24802
摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an absorbing underlayer on a substrate; b) forming a coating of a positive photoresist over the underlayer; c) forming a photoresist pattern; d) treating the first photoresist pattern with a hardening compound, thereby forming a hardened photoresist pattern; e) forming a silicon coating over the hardened photoresist pattern from a silicon coating composition; f) dry etching the silicon coating to remove the silicon coating till the silicon coating has about the same thickness as the photoresist pattern; and, g) dry etching to remove the photoresist and the underlayer, thereby forming a trench beneath the original position of the photoresist pattern. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.
摘要翻译：本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在基底上形成吸收性底层; b）在底层上形成正性光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）用硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的光致抗蚀剂图案; e）从硅涂层组合物在硬化的光致抗蚀剂图案上形成硅涂层; f）干蚀刻硅涂层以去除硅涂层，直到硅涂层具有与光致抗蚀剂图案大致相同的厚度; 并且g）干蚀刻以除去光致抗蚀剂和底层，从而在光致抗蚀剂图案的原始位置下形成沟槽。本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

5. 发明申请

US20080076059A1 Antireflective coating compositions 有权
标题翻译：防反射涂料组合物
公开(公告)号：US20080076059A1
公开(公告)日：2008-03-27
申请号：US11527862
申请日：2006-09-27
申请人： David J. Abdallah , Ralph R. Dammel
发明人： David J. Abdallah , Ralph R. Dammel
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , G03F7/2041
摘要： The present invention relates to a spin-on antireflective coating composition for a photoresist comprising a polymer, a crosslinking compound and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing the refractive index of the antireflective coating composition to a value equal or greater than 1.8 at exposure radiation used for imaging the photoresist and a functional moiety capable of absorbing exposure radiation used for imaging the photoresist. The invention further relates to a process for imaging the antireflective coating of the present invention.
摘要翻译：本发明涉及一种用于光致抗蚀剂的旋涂防反射涂料组合物，其包含聚合物，交联化合物和热酸产生剂，其中聚合物包含至少一个能够将抗反射涂料组合物的折射率增加至在用于成像光致抗蚀剂的曝光辐射下的值等于或大于1.8，以及能够吸收用于成像光致抗蚀剂的曝光辐射的功能部件。本发明还涉及本发明的抗反射涂层成像方法。

6. 发明授权

US07416834B2 Antireflective coating compositions 有权
公开(公告)号：US07416834B2
公开(公告)日：2008-08-26
申请号：US11527862
申请日：2006-09-27
申请人： David J. Abdallah , Ralph R. Dammel
发明人： David J. Abdallah , Ralph R. Dammel
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , G03F7/2041
摘要： The present invention relates to a spin-on antireflective coating composition for a photoresist comprising a polymer, a crosslinking compound and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing the refractive index of the antireflective coating composition to a value equal or greater than 1.8 at exposure radiation used for imaging the photoresist and a functional moiety capable of absorbing exposure radiation used for imaging the photoresist. The invention further relates to a process for imaging the antireflective coating of the present invention.

7. 发明授权

US07537879B2 Photoresist composition for deep UV and process thereof 失效
标题翻译：用于深紫外线的光致抗蚀剂组合物及其工艺
公开(公告)号：US07537879B2
公开(公告)日：2009-05-26
申请号：US10994745
申请日：2004-11-22
申请人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
发明人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , G03C1/73
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
摘要翻译：本发明涉及一种对300nm至100nm之间的波长敏感的新型化学放大光致抗蚀剂，并且包括a）一种新型聚合物，其包含不溶于碱性水溶液的聚合物主链的侧基的砜基，用酸不稳定基团保护的至少一个酸性部分，和b）在照射时能够产生酸的化合物。本发明还涉及对新型正性光致抗蚀剂组合物进行成像的方法。

8. 发明授权

US07033728B2 Photoresist composition 失效
标题翻译：光刻胶组成
公开(公告)号：US07033728B2
公开(公告)日：2006-04-25
申请号：US10748778
申请日：2003-12-29
申请人： Ralph R. Dammel
发明人： Ralph R. Dammel
IPC分类号： G03C1/73 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/143 , Y10S430/146
摘要： The present invention relates to a photosensitive composition useful at wavelengths between 300 nm and 10 nm which comprises a polymer containing a substituted or unsubstituted higher adamantane.
摘要翻译：本发明涉及一种可用于300nm至10nm波长的光敏组合物，其包含含有取代或未取代的较高金刚烷的聚合物。

9. 发明授权

US06991888B2 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
标题翻译：用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物
公开(公告)号：US06991888B2
公开(公告)日：2006-01-31
申请号：US10439472
申请日：2003-05-16
申请人： Munirathna Padmanaban , Takanori Kudo , Sangho Lee , Ralph R. Dammel , M. Dalil Rahman
发明人： Munirathna Padmanaban , Takanori Kudo , Sangho Lee , Ralph R. Dammel , M. Dalil Rahman
IPC分类号： G03F7/004 , C08F2/46 , C07C53/00 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/115
摘要： The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.
摘要翻译：本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物，能够在深紫外线的曝光波长下成像。本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。新型光致抗蚀剂包含a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物，其中R 1和R 2 R 5，R 6，R 7，或N R 8，R 9和R 9在本文中定义; m = 1-5; X - 是阴离子，Ar选自萘基，蒽基和结构3，其中R 30，R 31，R SUB > 32，R 33和R 34在本文中定义。

10. 发明授权

US06800416B2 Negative deep ultraviolet photoresist 失效
标题翻译：负深紫外光致抗蚀剂
公开(公告)号：US06800416B2
公开(公告)日：2004-10-05
申请号：US10042531
申请日：2002-01-09
申请人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel , Medhat A. Touky
发明人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel , Medhat A. Touky
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0046 , Y10S430/108
摘要： The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.
摘要翻译：本发明涉及一种可在碱性水溶液中显影的新型负极深紫外光致抗蚀剂，其包含氟化聚合物，光活性化合物和交联剂。光致抗蚀剂组合物特别适用于193nm和157nm的曝光波长的图形化。

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