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1. 发明申请

US20020034852A1 Superior silicon carbide integrated circuits and method of fabricating 失效
标题翻译：卓越的碳化硅集成电路及其制造方法
公开(公告)号：US20020034852A1
公开(公告)日：2002-03-21
申请号：US09952196
申请日：2001-09-14
申请人： PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
发明人： Dev Alok
IPC分类号： H01L021/8234
CPC分类号： H01L21/02667 , H01L21/02378 , H01L21/02532 , H01L21/0445 , H01L21/2022 , H01L21/8213 , H01L21/823807 , H01L21/8249 , H01L29/267 , H01L29/66068 , H01L29/7802
摘要： The present invention provides semiconductor devices having at least one silicon region in a silicon carbide wafer in which is fabricated a low voltage semiconductor device such as for example, MOSFET devices, BiCMOS devices, Bipolar devices, etc., and on the same chip, at least one silicon carbide region in which is fabricated a high voltage (i.e., >1000V) semiconductor device using techniques well known in the art, such as for example, LDMOSFET, UMOSFET, DMOSFET, IGBT, MESFET, and JFET devices. Such devices are derived from a method for forming a silicon region on a silicon carbide substrate which comprises the steps of: providing a monocrystalline silicon carbide substrate; amorphizing at least one region of the substrate, preferably by subjecting at least a portion of a surface of the substrate to ion implantation to convert at least a portion of the substrate surface to amorphous silicon carbide producing a region of amorphous silicon carbide on a monocrystalline silicon carbide substrate; removing at least an effective amount of carbon from said amorphized region, preferably by subjecting at least a portion of the amorphous silicon carbide region to an etchant material which selectively removes carbon to produce a region of amorphous silicon on a monocrystalline silicon carbide substrate; and subjecting the monocrystalline substrate with at least a region of amorphous silicon to high temperature thermal anneal to produce a region of monocrystalline silicon on said monocrystalline silicon carbide substrate.
摘要翻译：本发明提供了在碳化硅晶片中具有至少一个硅区域的半导体器件，其中制造了诸如MOSFET器件，BiCMOS器件，双极器件等的低电压半导体器件，并且在同一芯片上至少一个碳化硅区域，其中使用本领域公知的技术，例如LDMOSFET，UMOSFET，DMOSFET，IGBT，MESFET和JFET器件制造高电压（即> 1000V）半导体器件。这种器件源于在碳化硅衬底上形成硅区域的方法，该方法包括以下步骤：提供单晶碳化硅衬底; 优选通过使衬底的表面的至少一部分进行离子注入来将基板表面的至少一部分转化为非晶碳化硅，从而在单晶硅上产生非晶碳化硅的区域，使基底的至少一个区域非晶化碳化物基体; 从所述非晶化区域去除至少有效量的碳，优选通过使非晶碳化硅区域的至少一部分经受选择性地除去碳以在单晶碳化硅衬底上产生非晶硅区域的蚀刻剂材料; 以及使具有非晶硅的至少一个区域的所述单晶衬底经受高温热退火，以在所述单晶碳化硅衬底上产生单晶硅的区域。

2. 发明申请

US20020130325A1 Method of achieving higher inversion layer mobility in novel silicon carbide semiconductor devices 审中-公开
标题翻译：在新型碳化硅半导体器件中实现更高反型层迁移率的方法
公开(公告)号：US20020130325A1
公开(公告)日：2002-09-19
申请号：US10055378
申请日：2002-01-22
申请人： PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
发明人： Dev Alok
IPC分类号： H01L031/0312
CPC分类号： H01L29/7802 , H01L21/02532 , H01L21/02667 , H01L21/0445 , H01L21/049 , H01L21/2022 , H01L29/1608 , H01L29/66068 , Y10S438/966 , Y10S438/969
摘要： The invention provides a method for the production of high quality thermally grown oxide on top of silicon carbide. The high quality oxide is obtained by selectively removing the carbon from the silicon carbide in the areas where oxide formation is desired or required. The method includes the steps of: (a) amorphizing the silicon carbide in at least one region of a monocrystalline silicon carbide substrate by ion implantation; (b) removing at least an effective amount of the carbon resulting from amorphizing the silicon carbide with an etchant effective to selectively remove carbon from the amorphized silicon carbide to produce an amorphous silicon-rich region; and (c) forming an oxide on the etched surface to provide a device which has an oxide region on (1) either an amorphous silicon-rich region which is (i) predominantly or entirely amorphous silicon or (ii) a mixture of predominantly amorphous silicon in combination with minor amounts of amorphous silicon carbide and/or silicon dioxide or (2) a monocrystalline silicon region; wherein (1) or (2) is present on a region of a silicon carbide substrate, or (3) a region of a silicon carbide substrate.
摘要翻译：本发明提供了一种在碳化硅顶部生产高质量热生长氧化物的方法。通过在需要或需要氧化物形成的区域中选择性地除去碳化硅中的碳而获得高质量的氧化物。该方法包括以下步骤：（a）通过离子注入在单晶碳化硅衬底的至少一个区域中使碳化硅非晶化; （b）用蚀刻剂除去至少有效量的碳非晶化所产生的碳，以有选择地从非晶化碳化硅中除去碳以产生无定形富硅区; 和（c）在蚀刻表面上形成氧化物以提供在（1）无定形富硅区域上具有氧化物区域的器件，所述非晶硅富集区域是（i）主要或完全非晶硅或（ii）主要为非晶态的硅与少量非晶碳化硅和/或二氧化硅组合，或（2）单晶硅区; 其中（1）或（2）存在于碳化硅衬底的区域上，或（3）碳化硅衬底的区域。

3. 发明申请

US20020121641A1 Passivated silicon carbide devices with low leakage current and method of fabricating 失效
公开(公告)号：US20020121641A1
公开(公告)日：2002-09-05
申请号：US10055382
申请日：2002-01-22
申请人： Philips Electronics North America Corporation
发明人： Dev Alok , Emil Arnold
IPC分类号： H01L031/0256
CPC分类号： H01L29/6606 , H01L21/0445 , H01L21/045 , H01L21/0495 , H01L29/1608 , H01L29/872 , Y10S438/931
摘要： Semiconductor power devices with improved electrical characteristics are disclosed including rectifying contacts on a specially prepared semiconductor surface with little or no additional exposure to other chemical treatments, with oxide passivation and edge termination at a face of the semiconductor substrate adjacent to and surrounding the power device. The edge termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize a portion of the substrate face and preferably self-aligned to the device. The passivated, edge-terminated devices exhibit improved characteristics relative to passivated devices with characteristics approaching those of the native semiconductor with the additional advantages of passivation protection. Methods for making and using the devices are also disclosed.

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