会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明授权
    • Semiconductor laser with blocking layer
    • 具有阻挡层的半导体激光器
    • US4633477A
    • 1986-12-30
    • US632767
    • 1984-07-20
    • Charles B. MorrisonLuis FigueroaAndre Burghard
    • Charles B. MorrisonLuis FigueroaAndre Burghard
    • H01S5/223H01S5/40H01S3/19
    • H01S5/4031H01S5/2232H01S5/2234H01S5/2237
    • A semiconductor laser diode structure operable at high power and brightness levels and having a relatively low threshold current, high efficiency, good mode stability, and reduced temperature sensitivity. The disclosed embodiments have twin parallel channels formed in a p type substrate, and employ an n type blocking layer to confine current to a region between and including the channels. The structure includes first and second inactive cladding layers, and an active layer forming a diode junction. The first or lower inactive layer is thinner in the region between the channels, and this results in a higher forward-bias voltage at the center of the active layer, thereby focusing the current near the central position. This current focusing mechanism, which is enhanced by the optional use of a curved active layer, results in the improved characteristics of the structure. By selecting the effective width of a contact stripe overlying the second or upper inactive layer, single or multiple optical gain filaments may be produced.
    • 半导体激光二极管结构可在高功率和亮度水平下工作并且具有相对低的阈值电流,高效率,良好的模式稳定性和降低的温度灵敏度。 所公开的实施例具有形成在p型衬底中的双平行沟道,并且采用n型阻挡层将电流限制在通道之间并包括通道的区域。 该结构包括第一和第二非活性包覆层以及形成二极管结的有源层。 在通道之间的区域中,第一或更低的非活性层较薄,这导致有源层中心处的较高的正向偏置电压,从而将电流聚焦在中心位置附近。 通过可选地使用弯曲有源层增强的该电流对焦机构导致结构的改进的特性。 通过选择覆盖第二或上部非活性层的接触条的有效宽度,可以产生单个或多个光学增益细丝。