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1. 发明授权

US4634928A Superluminescent light-emitting diode and related method 失效
标题翻译：超发光二极管及相关方法
公开(公告)号：US4634928A
公开(公告)日：1987-01-06
申请号：US724870
申请日：1985-04-19
申请人： Luis Figueroa , Joseph W. Niesen , Lawrence M. Zinkiewicz , Charles B. Morrison
发明人： Luis Figueroa , Joseph W. Niesen , Lawrence M. Zinkiewicz , Charles B. Morrison
IPC分类号： H01L33/00 , H01S5/00 , H01S3/19
CPC分类号： H01L33/0045 , Y10S362/80
摘要： A superluminescent light-emitting diode in which the spectral width of the output increases with increasing optical output power, thereby allowing the generation of high optical output powers with a broad frequency spectrum that is desirable for some applications of the superluminescent diodes. This desirable characteristic is obtained by structuring the diode to produce a non-uniform gain profile across its active layer. Alternative approaches for achieving the non-uniform gain profile include varying the thickness of the active layer, and varying the current density by employing an asymmetrical channel configuration or an asymmetrical electrical contact strip.
摘要翻译：一种超发光发光二极管，其中输出的光谱宽度随着光输出功率的增加而增加，从而允许产生具有对于超发光二极管的一些应用是期望的宽频谱的高光输出功率。通过构建二极管以在其有源层上产生不均匀的增益分布来获得该期望的特性。用于实现不均匀增益分布的替代方法包括改变有源层的厚度，并且通过采用非对称沟道构型或非对称电接触带来改变电流密度。

2. 发明授权

US4856014A Angled stripe superluminescent diode 失效
标题翻译：角形超发光二极管
公开(公告)号：US4856014A
公开(公告)日：1989-08-08
申请号：US948177
申请日：1986-12-31
申请人： Luis Figueroa , Charles B. Morrison , Lawrence M. Zinkiewicz , Joseph W. Niesen
发明人： Luis Figueroa , Charles B. Morrison , Lawrence M. Zinkiewicz , Joseph W. Niesen
IPC分类号： H01L33/00 , H01S5/10 , H01S5/223
CPC分类号： H01S5/10 , H01L33/0045 , H01L33/0062 , H01S5/2232 , H01S5/2234
摘要： A semiconductor light-emitting device structured similarly to an index-guided laser, but having waveguide channels that are formed at a selected small angle of inclination with respect to a direction normal to cleaved facets formed in the structure. The angle of inclination should be at least half the critical beam angle above which total internal reflection will not occur within the waveguide channels. The angled condition of the waveguide channels ensures that effective mirror losses at the facets exceed the modal gain of the device, so that lasing will not occur, even when the current and power are increased to high levels. The device produces up to 30 mW or more of output power at a large spectral bandwidth and small coherence length.
摘要翻译：一种半导体发光器件，其结构类似于折射率引导激光器，但是具有相对于在该结构中形成的切割面垂直的方向以选定的小倾角形成的波导通道。倾斜角应该至少在临界光束角度的一半以上，在波导通道内不会发生全内反射。波导通道的倾斜状态确保了小面上的有效镜损耗超过器件的模态增益，因此即使当电流和功率增加到高电平时，也不会发生激光。该器件在大的光谱带宽和小的相干长度下产生高达30mW或更多的输出功率。

3. 发明授权

US4633477A Semiconductor laser with blocking layer 失效
标题翻译：具有阻挡层的半导体激光器
公开(公告)号：US4633477A
公开(公告)日：1986-12-30
申请号：US632767
申请日：1984-07-20
申请人： Charles B. Morrison , Luis Figueroa , Andre Burghard
发明人： Charles B. Morrison , Luis Figueroa , Andre Burghard
IPC分类号： H01S5/223 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/2232 , H01S5/2234 , H01S5/2237
摘要： A semiconductor laser diode structure operable at high power and brightness levels and having a relatively low threshold current, high efficiency, good mode stability, and reduced temperature sensitivity. The disclosed embodiments have twin parallel channels formed in a p type substrate, and employ an n type blocking layer to confine current to a region between and including the channels. The structure includes first and second inactive cladding layers, and an active layer forming a diode junction. The first or lower inactive layer is thinner in the region between the channels, and this results in a higher forward-bias voltage at the center of the active layer, thereby focusing the current near the central position. This current focusing mechanism, which is enhanced by the optional use of a curved active layer, results in the improved characteristics of the structure. By selecting the effective width of a contact stripe overlying the second or upper inactive layer, single or multiple optical gain filaments may be produced.
摘要翻译：半导体激光二极管结构可在高功率和亮度水平下工作并且具有相对低的阈值电流，高效率，良好的模式稳定性和降低的温度灵敏度。所公开的实施例具有形成在p型衬底中的双平行沟道，并且采用n型阻挡层将电流限制在通道之间并包括通道的区域。该结构包括第一和第二非活性包覆层以及形成二极管结的有源层。在通道之间的区域中，第一或更低的非活性层较薄，这导致有源层中心处的较高的正向偏置电压，从而将电流聚焦在中心位置附近。通过可选地使用弯曲有源层增强的该电流对焦机构导致结构的改进的特性。通过选择覆盖第二或上部非活性层的接触条的有效宽度，可以产生单个或多个光学增益细丝。

4. 发明授权

US4631729A Semiconductor laser structure 失效
标题翻译：半导体激光器结构
公开(公告)号：US4631729A
公开(公告)日：1986-12-23
申请号：US556879
申请日：1983-12-01
申请人： Frank E. Goodwin , Hsiang-Yi D. Law , Charles B. Morrison , Luis Figueroa
发明人： Frank E. Goodwin , Hsiang-Yi D. Law , Charles B. Morrison , Luis Figueroa
IPC分类号： H01S5/00 , H01S5/223 , H01S5/40 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/4031 , H01S5/2234 , H01S5/2237
摘要： A semiconductor laser array structure operable at relatively high powers and high brightness levels compared with prior laser arrays. At least two principal lasing regions are formed in a single active layer of the structure, and are closely coupled by an intermediate region in which there is optical gain. Preferably, the dimensions of the structure are selected to provide single-filament lasing in the principal lasing regions and in the intermediate region, resulting in a composite output that is apparently phase-locked and has a high-brightness, single-lobe far-field radiation distribution pattern with a low divergence angle. The disclosed structure uses gallium arsenide and gallium aluminum arsenide materials and is fabricated using liquid-phase epitaxy. Longitudinal mode selection in the device may be accomplished by configuring the two channels to produce different sets of longitudinal modes, the close coupling of the two regions resulting in the output of only those modes common to both regions.
摘要翻译：与现有的激光阵列相比，半导体激光器阵列结构可在相对较高的功率和高亮度水平下工作。至少两个主要激光区域形成在该结构的单个有源层中，并且通过存在光学增益的中间区域紧密耦合。优选地，选择结构的尺寸以在主激光区域和中间区域中提供单丝激光，导致明显地锁相的复合输出，并且具有高亮度，单瓣的远场具有低发散角的辐射分布图。所公开的结构使用砷化镓和砷化镓铝材料，并且使用液相外延制造。器件中的纵向模式选择可以通过配置两个通道来产生不同的纵向模式组来实现，两个区域的紧密耦合导致仅输出两个区域共同的模式。

5. 发明授权

US4346394A Gallium arsenide burrus FET structure for optical detection 失效
标题翻译：砷化镓刺激FET结构进行光学检测
公开(公告)号：US4346394A
公开(公告)日：1982-08-24
申请号：US133183
申请日：1980-03-24
申请人： Luis Figueroa , Huan-Wun Yen
发明人： Luis Figueroa , Huan-Wun Yen
IPC分类号： H04H20/88 , H01L31/112 , H01L27/14 , H01L29/80 , H01L31/10
CPC分类号： H01L31/1123
摘要： A GaAs FET structure with a high electric field region, or active region, contacted by source, gate and drain electrodes is provided which can be used for high speed optical detection or for microwave oscillator optical injection locking. The device provides for efficient coupling of optical radiation into the active region through an opening in a semi-insulating substrate used to support the device. A buffer layer between the active region and the substrate prevents leakage current to the substrate, permits a larger illumination window for improved optical coupling and provides mechanical support for the FET detector. GaAs photodetectors are also provided by eliminating the gate electrode.
摘要翻译：提供了具有与源极，栅极和漏极接触的高电场区域或有源区的GaAs FET结构，其可用于高速光学检测或微波振荡器光注入锁定。该器件通过用于支持器件的半绝缘衬底中的开口提供光辐射有效耦合到有源区域中。有源区和衬底之间的缓冲层防止对衬底的泄漏电流，允许更大的照明窗用于改善光耦合并为FET检测器提供机械支撑。还通过去除栅电极来提供GaAs光电探测器。

6. 发明授权

US4446557A Mode-locked semiconductor laser with tunable external cavity 失效
标题翻译：锁模半导体激光器具有可调谐外腔
公开(公告)号：US4446557A
公开(公告)日：1984-05-01
申请号：US319014
申请日：1981-11-06
申请人： Luis Figueroa
发明人： Luis Figueroa
IPC分类号： H01S5/06 , H01S5/065 , H01S3/19
CPC分类号： H01S5/0615 , H01S5/065
摘要： A mode-locked gallium arsenide crystal laser has a cavity length equal to one-half its principal noise resonance wavelength and an electrode overlying a portion of the crystal, the remaining portion being a self-aligned region diffused or implanted with impurities comprising saturable absorbing centers. An anti-reflective coating is placed on a crystal facet facing an external mirror defining one end of the laser cavity. The resulting laser has improved power, frequency and temporal stability.
摘要翻译：锁模砷化镓晶体激光器具有等于其主要噪声共振波长的二分之一的空腔长度和覆盖晶体的一部分的电极，其余部分是扩散或植入包含可饱和吸收中心的杂质的自对准区域。将抗反射涂层放置在面向限定激光腔的一端的外部镜的晶面上。所得到的激光器具有改进的功率，频率和时间稳定性。

7. 发明授权

US09719521B2 Fluid intensifier for a dry gas seal system 有权
公开(公告)号：US09719521B2
公开(公告)日：2017-08-01
申请号：US13920346
申请日：2013-06-18
申请人： John Sears , Vladimir Bakalchuk , Luis Figueroa
发明人： John Sears , Vladimir Bakalchuk , Luis Figueroa
IPC分类号： F04D29/10 , F16J15/00 , F15B3/00
CPC分类号： F04D29/10 , F15B3/00 , F16J15/00
摘要： A gas supply system for a mechanical seal turns on the gas supply at a pressurized flow rate at the time of compressor case pressurization and remains on during compressor rotation until pressure is adequate. The gas supply system has an intensifier that includes a pair of mechanically inter-connected pneumatic pressure cylinders which comprise a drive cylinder that affects movement of a boost cylinder wherein the displacement of these mechanically interconnected pistons in the drive cylinder and boost cylinder intensifies the pressure being discharged by the boost cylinder and supplied as a barrier fluid to the mechanical seal. The intensifier uses a control valve and operating system which includes a fast-acting 5/2-way solenoid valve having a feedback loop connected to a control system which includes a microprocessor that controls valve actuation.

8. 发明申请

US20100161770A1 USER-CONTROLLED NETWORK VIDEO MANAGEMENT 有权
标题翻译：用户控制的网络视频管理
公开(公告)号：US20100161770A1
公开(公告)日：2010-06-24
申请号：US12341506
申请日：2008-12-22
申请人： Robert J. Ferro , Luis Figueroa , David H. Lu , Chen Yui Yang
发明人： Robert J. Ferro , Luis Figueroa , David H. Lu , Chen Yui Yang
IPC分类号： G06F15/177
CPC分类号： H04L47/2408 , H04L41/0213 , H04L41/0896 , H04L41/5022 , H04L41/5025 , H04L41/5038 , H04L41/509 , H04L43/0829 , H04L43/16 , H04L47/10 , H04L47/2416 , H04L47/2433 , H04L47/2458 , H04L47/32 , H04L47/6275
摘要： A process and system for user-controlled configuration of an Internet protocol network. The user may supply input for generating a network classification profile, which includes a number of classes of service (COSs) for prioritizing network traffic, including video transmission. A quality of service (QOS) may be measured and compared with a COS for video transmission. Depending on the measured QOS, a network alert may be issued and a priority of packets associated with the COS for video transmission may be increased.
摘要翻译：用于因特网协议网络的用户控制配置的过程和系统。用户可以提供用于生成网络分类简档的输入，该分类简档包括用于对包括视频传输在内的网络流量进行优先级排列的多个服务等级（COS）。可以测量服务质量（QOS）并将其与用于视频传输的COS进行比较。根据测量的QOS，可以发出网络警报，并且可以增加与用于视频传输的COS相关联的分组的优先级。

9. 发明授权

US4696648A Heterostructure interdigital high speed photoconductive detector 失效
标题翻译：异构结构指数高速光电导检测器
公开(公告)号：US4696648A
公开(公告)日：1987-09-29
申请号：US828406
申请日：1986-02-11
申请人： Charles W. Slayman , Luis Figueroa
发明人： Charles W. Slayman , Luis Figueroa
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/09 , H01L21/283 , H01L21/12 , H01L31/02
CPC分类号： H01L31/09 , H01L31/02161 , H01L31/0224
摘要： A high speed photoconductive detector is disclosed which comprises two interdigital electrically conducting electrodes formed on a photoconductive layer. The device speed and sensitivity are improved by using a double-heterostructure configuration comprising an active layer formed on an isolation layer in turn formed on a supporting substrate. A passivation layer is formed on the active layer. This configuration confines the generated carriers to the active layer. Consequently, current will be induced under optical illumination due to photo-carrier generation. This interdigitated geometry allows for a large device cross-section and small carrier transit distance.
摘要翻译：公开了一种高速光电导检测器，其包括形成在光电导层上的两个交叉指导电极。通过使用包括在隔离层上形成的有源层依次形成在支撑衬底上的双异质结构配置来提高器件速度和灵敏度。钝化层形成在有源层上。该配置将生成的载波限制到活动层。因此，由于光载体的产生，电流将在光学照明下引起。这种交叉几何允许大的设备横截面和小的载体传输距离。

10. 发明授权

US4593304A Heterostructure interdigital high speed photoconductive detector 失效
公开(公告)号：US4593304A
公开(公告)日：1986-06-03
申请号：US559509
申请日：1984-02-27
申请人： Charles W. Slayman , Luis Figueroa
发明人： Charles W. Slayman , Luis Figueroa
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/09 , H01L29/14 , H01L27/12 , H01L29/161 , H01L29/48
CPC分类号： H01L31/0224 , H01L31/02161 , H01L31/09
摘要： A high speed photoconductive detector is disclosed which comprises two interdigital electrically conducting electrodes formed on a photoconductive layer. The device speed and sensitivity are improved by using a double-heterostructure configuration comprising an active layer formed on an isolation layer in turn formed on a supporting substrate. A passivation layer is formed on the active layer. This configuration confines the generated carriers to the active layer. Consequently, current will be induced under optical illumination due to photo-carrier generation. This interdigitated geometry allows for a large device cross-section and small carrier transit distance.

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