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1. 发明授权

US4277799A Color solid-state imaging device 失效
标题翻译：彩色固态成像装置
公开(公告)号：US4277799A
公开(公告)日：1981-07-07
申请号：US923982
申请日：1978-07-12
申请人： Norio Koike , Iwao Takemoto , Masaharu Kubo , Kazuhiro Sato , Shusaku Nagahara
发明人： Norio Koike , Iwao Takemoto , Masaharu Kubo , Kazuhiro Sato , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/372 , H04N5/374 , H04N9/04 , H04N9/07
CPC分类号： H01L27/14643 , H01L27/14645 , H04N3/1512 , H04N9/045
摘要： A color solid-state imaging device is provided with a plurality of signal output lines for reading out signals derived from photoelectric conversion elements which form picture elements for red, green, and blue lights arranged in, for example, a checkered pattern.
摘要翻译：彩色固态成像装置设置有多条信号输出线，用于读出从形成例如格子图案的红色，绿色和蓝色光的图像元素的光电转换元件导出的信号。

2. 发明授权

US4148051A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4148051A
公开(公告)日：1979-04-03
申请号：US874939
申请日：1978-02-03
申请人： Norio Koike , Iwao Takemoto , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Masaharu Kubo
IPC分类号： H01L21/8234 , H01L27/146 , H01L31/113 , H04N5/335 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号： H01L31/1136 , H01L21/823406 , H01L27/14643 , H01L27/14645
摘要： In a solid-state imaging device wherein at least one pn-junction photodiode and photo-signal detecting means adjacent thereto are disposed in a surface portion of a semiconductor substrate of one conductivity type, a solid-state imaging device characterized in that at least one window region is disposed within a semiconductor region which constitutes said photodiode and which has the opposite conductivity type to that of said semiconductor substrate, said window region "hollowing" said semiconductor region up to the surface of said semiconductor substrate and being made of a part of said semiconductor substrate.
摘要翻译：在其中至少一个pn结光电二极管和与其相邻的光信号检测装置设置在一种导电类型的半导体衬底的表面部分中的固态成像装置中，其特征在于至少一个窗口区域设置在构成所述光电二极管并且具有与所述半导体衬底的导电类型相反的导电类型的半导体区域内，所述窗口区域“中空”所述半导体区域直到所述半导体衬底的表面，并且由所述半导体区域的一部分所述半导体衬底。

3. 发明授权

US4514766A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4514766A
公开(公告)日：1985-04-30
申请号：US482791
申请日：1983-04-07
申请人： Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
IPC分类号： H04N5/345 , H04N5/372 , H04N5/3728 , H04N3/15
CPC分类号： H04N3/1575 , H01L27/14856 , H04N3/1537
摘要： A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.
摘要翻译：提供了一种使用CCD作为垂直移位寄存器的固态成像装置和用于垂直和水平扫描并读出排列在二维平面中的大量光电元件的水平移位寄存器。成像装置的特征在于，布置在垂直移位寄存器之间的每列的光电元件交替地连接到左右垂直移位寄存器。这导致设备的分辨率急剧增加。

4. 发明授权

US4209806A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4209806A
公开(公告)日：1980-06-24
申请号：US928734
申请日：1978-07-27
申请人： Norio Koike , Iwao Takemoto , Toshiyuki Akiyama , Haruhisa Ando , Shinya Ohba , Masatada Horiuchi , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Toshiyuki Akiyama , Haruhisa Ando , Shinya Ohba , Masatada Horiuchi , Masaharu Kubo
IPC分类号： H01L27/088 , H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/372 , H04N5/374 , H04N3/14 , H01L27/14 , H01L29/78
CPC分类号： H01L27/14643 , H01L27/088
摘要： In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.
摘要翻译：在其中多个光电转换元件，用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N（或P）型半导体的主表面区域中其特征在于，在所述半导体主体的主表面区域设置有彼此隔离的多个P（或N）型杂质层，所述开关晶体管和所述光电转换元件被集成在一个杂质层中，水平扫描电路集成在另一个杂质层中，垂直扫描电路集成在另一个杂质层中，并且预定电压施加到设置在各个杂质层上的电极。

5. 发明授权

US4148048A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4148048A
公开(公告)日：1979-04-03
申请号：US871252
申请日：1978-01-23
申请人： Iwao Takemoto , Norio Koike , Masaharu Kubo
发明人： Iwao Takemoto , Norio Koike , Masaharu Kubo
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14645 , H01L27/14654
摘要： A solid-state imaging device contains a photoelectric part in which a plurality of picture elements each consisting of a photodiode and a switching transistor are arranged in two dimensions. The picture elements are disposed on the same semiconductor substrate, and scanning circuits which scan the switching transistors of the photoelectric part in succession are provided. The solid-state imaging device further comprises a semiconductor layer which has a conductivity type opposite to that of the semiconductor substrate and which is disposed in one major surface of the semiconductor substrate and means for applying a reverse bias between the semiconductor layer and the semiconductor substrate. At least the photoelectric part is disposed within the semiconductor layer, and a high impurity concentration region which has the same conductivity type as that of the semiconductor layer and is disposed at least under a part of the photodiode.
摘要翻译：固态成像装置包括其中由光电二极管和开关晶体管组成的多个像素二维布置的光电部件。图像元素设置在相同的半导体衬底上，并且连续地扫描光电部件的开关晶体管的扫描电路被设置。固态成像装置还包括半导体层，其具有与半导体衬底的导电类型相反的导电类型，并且设置在半导体衬底的一个主表面中;以及用于在半导体层和半导体衬底之间施加反向偏压的装置。至少光电部件设置在半导体层内，高浓度区域具有与半导体层相同的导电类型，并且至少设置在光电二极管的一部分下方。

6. 发明授权

US4295055A Circuit for generating scanning pulses 失效
标题翻译：用于产生扫描脉冲的电路
公开(公告)号：US4295055A
公开(公告)日：1981-10-13
申请号：US46028
申请日：1979-06-06
申请人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
发明人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
IPC分类号： G11C19/00 , G11C19/18 , G11C19/28 , H01L27/146 , H01L31/10 , H03K5/15 , H04N3/14
CPC分类号： H03K5/15093 , G11C19/184 , G11C19/28
摘要： A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.
摘要翻译：一种用于产生扫描脉冲的电路，包括串联连接的多级基本电路，所述每个基本电路包括第一，第二和第三绝缘栅极场效应晶体管（MIST），每个绝缘栅场效应晶体管的第一和第二端子均为源极所述第一MIST的所述第一端子用作时钟脉冲施加端子，所述第一MIST的所述栅极端子用作输入端子，所述第一MIST的所述第二端子和所述第一端子的所述第一端子并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子，所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子，所述第三MIST的所述第二端子被用作接地端子，所述第三MIST的所述栅极端子用作反馈输入端子。

7. 发明授权

US4223330A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4223330A
公开(公告)日：1980-09-16
申请号：US5567
申请日：1979-01-22
申请人： Norio Koike , Iwao Takemoto , Shinya Ohba , Masaharu Kubo , Shuhei Tanaka
发明人： Norio Koike , Iwao Takemoto , Shinya Ohba , Masaharu Kubo , Shuhei Tanaka
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/374 , H01L27/14 , H01L29/78
CPC分类号： H01L27/14654
摘要： In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off," a solid-state imaging device characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are placed into a deeper cutoff state, i.e., the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are placed at an accumulation level.
摘要翻译：在具有在半导体衬底的一个主表面区域中设置为二维阵列的光电转换元件的立体成像器件中，垂直开关金属 - 绝缘体 - 半导体场效应晶体管和水平开关金属 - 绝缘体半导体选择光电转换元件的场效应晶体管以及使开关晶体管“导通”和“截止”的垂直和水平扫描电路，其特征在于垂直开关金属 - 绝缘体半导体场效应晶体管未选择的位置被置于更深的截止状态，即，对应于这些垂直开关金属 - 绝缘体 - 半导体场效应晶体管的栅极的半导体衬底的主表面区域被放置在累积水平。

8. 发明授权

US4322740A Solid-state color imaging camera 失效
标题翻译：固态彩色摄像机
公开(公告)号：US4322740A
公开(公告)日：1982-03-30
申请号：US134285
申请日：1980-03-26
申请人： Iwao Takemoto , Shusaku Nagahara , Tsutomu Fujita , Kazuo Sato
发明人： Iwao Takemoto , Shusaku Nagahara , Tsutomu Fujita , Kazuo Sato
IPC分类号： H04N9/04 , H04N9/07
CPC分类号： H04N9/045
摘要： A solid-state color imaging camera comprises three solid-state image sensors each of which has a two-dimensional array of picture elements arranged with respective predetermined pitches in vertical and horizontal directions. The first, second and third image sensors are used for green, red and blue lights. The optical positioning of the first image sensor is shifted with respect to the second and third image sensors by the half of the picture element pitch in the vertical direction.
摘要翻译：固态彩色成像照相机包括三个固态图像传感器，每个固态图像传感器具有在垂直和水平方向上以各个预定间距布置的图像元素的二维阵列。第一，第二和第三图像传感器用于绿色，红色和蓝色光。第一图像传感器的光学定位相对于第二和第三图像传感器在垂直方向上偏移了像素间距的一半。

9. 发明授权

US4543610A Solid-state imaging device including noise subtraction with polarity control 失效
标题翻译：固态成像装置包括具有极性控制的噪声减除
公开(公告)号：US4543610A
公开(公告)日：1985-09-24
申请号：US518699
申请日：1983-07-29
申请人： Naoki Ozawa , Shusaku Nagahara , Kenji Takahashi , Iwao Takemoto , Shigeki Nishizawa , Masanori Sato , Satoshi Suzuki
发明人： Naoki Ozawa , Shusaku Nagahara , Kenji Takahashi , Iwao Takemoto , Shigeki Nishizawa , Masanori Sato , Satoshi Suzuki
IPC分类号： H04N5/335 , H04N5/341 , H04N5/359 , H04N5/374 , H04N3/14 , H04N5/21
CPC分类号： H04N5/2175
摘要： A solid-state imaging device comprises a number of photodiodes arrayed in horizontal rows and vertical columns, a first output circuit for sequentially reading out signal charges from those photodiodes which are arrayed on odd-numbered horizontal rows, a second output circuit for sequentially reading out signal charges from the photodiodes arrayed on the even-numbered horizontal rows, a synchronizing pulse generator for synchronizing operation of the first and second output circuits, a first subtracting circuit for determining the difference between the output signals of the first and second output circuits in odd-numbered field, and a second subtracting circuit for determining the difference between the output signals of the first and second output circuits in even-numbered field. The outputs of the first and second subtracting circuit are alternately extracted in synchronism with the synchronizing pulse produced by the synchronizing pulse generator. The solid-state imaging device is made immune to the smear phenomenon. The invention can be advantageously applied to the solid-state imaging device of CCD type as well as MOS type.
摘要翻译：固态成像装置包括以水平行和垂直列排列的多个光电二极管，第一输出电路，用于顺序地从排列在奇数水平行上的那些光电二极管读出信号电荷;第二输出电路，用于依次读出来自布置在偶数水平行上的光电二极管的信号电荷，用于同步第一和第二输出电路的操作的同步脉冲发生器，用于确定奇数的第一和第二输出电路的输出信号之间的差异的第一减法电路以及用于确定偶数场中的第一和第二输出电路的输出信号之间的差的第二减法电路。与同步脉冲发生器产生的同步脉冲同步地交替地提取第一和第二减法电路的输出。使固态成像装置免受涂片现象的影响。本发明可以有利地应用于CCD型的固态成像装置以及MOS型。

10. 发明授权

US4532549A Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency 失效
标题翻译：具有高准信号扫频效率和高信号电荷转移效率的固态成像装置
公开(公告)号：US4532549A
公开(公告)日：1985-07-30
申请号：US473865
申请日：1983-03-10
申请人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
发明人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378 , H04N5/30
CPC分类号： H01L27/14643
摘要： Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.
摘要翻译：公开了一种固态成像装置，其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线，然后垂直信号线上的光信息被水平扫描电荷转移装置的水平寄存器。偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间，偏置电荷输入装置布置在水平寄存器中。为了确保在垂直线之间向存储装置，扫除漏极和电荷转移装置传输信号的高效率，布置为在每个转移阶段提供偏置电荷。因此，使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。类似地，从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。最后，从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。由此，来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强，并且产生高质量的视频信号。

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