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    • 1. 发明授权
    • Methods of forming semiconductor structures
    • 形成半导体结构的方法
    • US07713817B2
    • 2010-05-11
    • US11968281
    • 2008-01-02
    • Nishant SinhaDinesh ChopraFred D. Fishburn
    • Nishant SinhaDinesh ChopraFred D. Fishburn
    • H01L21/8242
    • H01L21/288H01L21/76805H01L21/76816H01L21/76879H01L23/522H01L27/10855H01L27/10888H01L2924/0002H01L2924/00
    • Electroless plating can be utilized to form electrical interconnects associated with semiconductor substrates. For instance, a semiconductor substrate can be formed to have a dummy structure thereover with a surface suitable for electroless plating, and to also have a digit line thereover having about the same height as the dummy structure. A layer can be formed over the dummy structure and digit line, and openings can be formed through the layer to the upper surfaces of the dummy structure and digit line. Subsequently, a conductive material can be electroless plated within the openings to form electrical contacts within the openings. The opening extending to the dummy structure can pass through a capacitor electrode, and accordingly the conductive material formed within such opening can be utilized to form electrical contact to the capacitor electrode.
    • 可以利用无电镀形成与半导体衬底相关的电互连。 例如,半导体基板可以形成为具有适合于化学镀的表面的虚拟结构,并且还具有与虚拟结构大致相同的高度的数字线。 可以在虚拟结构和数字线上形成层,并且可以通过该层到虚拟结构和数字线的上表面形成开口。 随后,导电材料可以在开口内无电镀,以在开口内形成电接触。 延伸到虚拟结构的开口可以通过电容器电极,因此形成在该开口内的导电材料可用于与电容器电极形成电接触。
    • 6. 发明授权
    • Methods of forming a plurality of capacitors
    • 形成多个电容器的方法
    • US08163613B2
    • 2012-04-24
    • US12823797
    • 2010-06-25
    • Fred D. Fishburn
    • Fred D. Fishburn
    • H01L21/8242
    • H01L27/10817H01L27/0207H01L27/10852H01L28/91
    • A method of forming a plurality of capacitors includes forming a plurality of individual capacitor electrodes using two masking steps. An earlier of the two masking steps is used to form an array of first openings over a plurality of storage node contacts. A later of the two masking steps is used to form an array of second openings received partially over and partially offset from the array of first openings. Overlapping portions of the first and second openings are received over the storage node contacts. After both of the two masking steps, conductive material of the individual capacitor electrodes is deposited into the overlapping portions of each of the first and second openings. The individual capacitor electrodes are incorporated into a plurality of capacitors. Other aspects and implementations are contemplated.
    • 形成多个电容器的方法包括使用两个掩蔽步骤形成多个单独的电容器电极。 使用两个屏蔽步骤中较早的一个来形成多个存储节点触点上的第一开口的阵列。 两个掩蔽步骤之后的后面被用于形成部分地在第一开口的阵列上部分偏移并且部分地偏离第一开口阵列的第二开口的阵列。 第一和第二开口的重叠部分被接收在存储节点触点上。 在两个掩模步骤之后,单个电容器电极的导电材料沉积到第一和第二开口中的每一个的重叠部分中。 各个电容器电极被并入到多个电容器中。 考虑了其他方面和实现。
    • 8. 发明授权
    • Methods of forming DRAM arrays
    • 形成DRAM阵列的方法
    • US07384847B2
    • 2008-06-10
    • US11111625
    • 2005-04-21
    • Luan C. TranFred D. Fishburn
    • Luan C. TranFred D. Fishburn
    • H01L21/336
    • H01L27/10888H01L27/1052H01L27/10814H01L27/10855H01L27/10885H01L27/10894H01L27/10897H01L27/115H01L27/11521H01L27/11531H01L27/24Y10S257/906Y10S257/908
    • The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact locations. An insulative material can be formed over the etch stop and over the bitline contact locations, and trenches can be formed through the insulative material. Conductive material can be provided within the trenches to form bitline interconnect lines which are in electrical contact with the bitline contact locations, and which are electrically isolated from the storage node contact locations by the etch stop. In subsequent processing, openings can be formed through the etch stop to the storage node contact locations. Memory storage devices can then be formed within the openings and in electrical contact with the storage node contact locations.
    • 本发明包括可用于形成存储器阵列的存储器阵列和方法。 在存储器阵列制造期间可以使用图案化蚀刻停止件,其中蚀刻停止覆盖存储节点接触位置,同时将开口留在位线接触位置。 可以在蚀刻停止点上方和位线接触位置上形成绝缘材料,并且可以通过绝缘材料形成沟槽。 可以在沟槽内提供导电材料以形成与位线接触位置电接触的位线互连线,并且通过蚀刻停止件与存储节点接触位置电隔离。 在随后的处理中,可以通过蚀刻停止件向存储节点接触位置形成开口。 然后可以在开口内形成存储器存储装置,并与存储节点接触位置电接触。