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1. 发明授权

US07153778B2 Methods of forming openings, and methods of forming container capacitors 有权
公开(公告)号：US07153778B2
公开(公告)日：2006-12-26
申请号：US10783843
申请日：2004-02-20
申请人： Brett W. Busch , Luan C. Tran , Ardavan Niroomand , Fred D. Fishburn , Yoshiki Hishiro , Ulrich C. Boettiger , Richard D. Holscher
发明人： Brett W. Busch , Luan C. Tran , Ardavan Niroomand , Fred D. Fishburn , Yoshiki Hishiro , Ulrich C. Boettiger , Richard D. Holscher
IPC分类号： H01L21/3205
CPC分类号： H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L27/10852 , H01L28/91 , Y10S438/942 , Y10S438/946
摘要： A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.

2. 发明授权

US07538036B2 Methods of forming openings, and methods of forming container capacitors 失效
标题翻译：形成开口的方法，以及形成容器电容器的方法
公开(公告)号：US07538036B2
公开(公告)日：2009-05-26
申请号：US11216759
申请日：2005-08-31
申请人： Brett W. Busch , Luan C. Tran , Ardavan Niroomand , Fred D. Fishburn , Yoshiki Hishiro , Ulrich C. Boettiger , Richard D. Holscher
发明人： Brett W. Busch , Luan C. Tran , Ardavan Niroomand , Fred D. Fishburn , Yoshiki Hishiro , Ulrich C. Boettiger , Richard D. Holscher
IPC分类号： H01L21/3205
CPC分类号： H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L27/10852 , H01L28/91 , Y10S438/942 , Y10S438/946
摘要： A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.
摘要翻译：图案化掩模可以如下形成。在掩模层上形成第一图案化的光致抗蚀剂，并在第一蚀刻进入掩模层期间使用。第一蚀刻延伸到掩模层中的深度不到完全通过掩模层的深度。随后在掩模层上形成第二图案化的光致抗蚀剂，并在第二次蚀刻进入掩模层期间利用。组合的第一和第二蚀刻形成完全延伸穿过掩模层的开口，从而在掩模层中形成掩模层。图案化掩模可以用于在掩模下面的衬底中形成图案。形成在基板中的图案可以对应于电容器容器开口的阵列。可以在开口内形成电容结构。电容器结构可以并入DRAM阵列中。

3. 发明申请

US20050186802A1 Methods of Forming Openings, And Methods of Forming Container Capacitors 有权
标题翻译：形成开口的方法和形成容器电容器的方法
公开(公告)号：US20050186802A1
公开(公告)日：2005-08-25
申请号：US10783843
申请日：2004-02-20
申请人： Brett Busch , Luan Tran , Ardavan Niroomand , Fred Fishburn , Yoshiki Hishiro , Ulrich Boettiger , Richard Holscher
发明人： Brett Busch , Luan Tran , Ardavan Niroomand , Fred Fishburn , Yoshiki Hishiro , Ulrich Boettiger , Richard Holscher
IPC分类号： H01L21/02 , H01L21/033 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/8234 , H01L21/8242 , H01L21/8244 , H01L27/108 , H01L29/76
CPC分类号： H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L27/10852 , H01L28/91 , Y10S438/942 , Y10S438/946
摘要： A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.
摘要翻译：图案化掩模可以如下形成。在掩模层上形成第一图案化的光致抗蚀剂，并在第一蚀刻进入掩模层期间使用。第一蚀刻延伸到掩模层中的深度不到完全通过掩模层的深度。随后在掩模层上形成第二图案化的光致抗蚀剂，并在第二次蚀刻进入掩模层期间利用。组合的第一和第二蚀刻形成完全延伸穿过掩模层的开口，从而在掩模层中形成掩模层。图案化掩模可以用于在掩模下面的衬底中形成图案。形成在基板中的图案可以对应于电容器容器开口的阵列。可以在开口内形成电容结构。电容器结构可以并入DRAM阵列中。

4. 发明申请

US20060009042A1 Methods of forming openings, and methods of forming container capacitors 失效
公开(公告)号：US20060009042A1
公开(公告)日：2006-01-12
申请号：US11216759
申请日：2005-08-31
申请人： Brett Busch , Luan Tran , Ardavan Niroomand , Fred Fishburn , Yoshiki Hishiro , Ulrich Boettiger , Richard Holscher
发明人： Brett Busch , Luan Tran , Ardavan Niroomand , Fred Fishburn , Yoshiki Hishiro , Ulrich Boettiger , Richard Holscher
IPC分类号： H01L21/302 , H01L21/31
CPC分类号： H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L27/10852 , H01L28/91 , Y10S438/942 , Y10S438/946
摘要： A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.

5. 发明授权

US08309297B2 Methods of lithographically patterning a substrate 失效
标题翻译：平版印刷基板的方法
公开(公告)号：US08309297B2
公开(公告)日：2012-11-13
申请号：US11868328
申请日：2007-10-05
申请人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
发明人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
IPC分类号： G03F7/22
CPC分类号： G03F7/2022 , G03F7/203
摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.
摘要翻译：光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。预期其他实现和实施例。

6. 发明授权

US07846623B2 Resist pattern and reflow technology 有权
标题翻译：抗蚀图案和回流技术
公开(公告)号：US07846623B2
公开(公告)日：2010-12-07
申请号：US12081098
申请日：2008-04-10
申请人： Yoshiki Hishiro
发明人： Yoshiki Hishiro
IPC分类号： B32B5/14
CPC分类号： H01L21/0271 , G03F7/40 , H01L21/312 , Y10T428/24802
摘要： A reflow stabilizing solution for treating photoresist patterns and a reflow technology are disclosed. The reflow stabilizing solution comprises a polymer and is applied after the photoresist material has been developed and patterned. By treating the photoresist with the reflow stabilizing solution after resist patterning and further subjecting the reflow stabilizing solution to a heat treatment, the non-volatile polymer remains in between adjacent resist patterns and acts as a stopper to the reflowed photoresist. In this manner, the non-volatile polymer provides structural and mechanical support for the reflowed resist, preventing resist collapse at high temperatures and allowing the formation of reflowed resist structures having line width dimensions in the submicron range.
摘要翻译：公开了一种用于处理光刻胶图案的回流稳定溶液和回流技术。回流稳定溶液包含聚合物，并且在光致抗蚀剂材料已经显影和图案化之后被施加。通过在抗蚀剂图案化之后用回流稳定溶液处理光致抗蚀剂，并进一步对回流稳定溶液进行热处理，非挥发性聚合物保留在相邻抗蚀剂图案之间，并作为回流光致抗蚀剂的阻挡剂。以这种方式，非挥发性聚合物为回流的抗蚀剂提供结构和机械支撑，防止高温下的抗塌陷，并允许形成具有亚微米范围的线宽度尺寸的回流抗蚀剂结构。

7. 发明授权

US07687406B2 Methods of eliminating pattern collapse on photoresist patterns 失效
标题翻译：消除光刻胶图案上的图案崩溃的方法
公开(公告)号：US07687406B2
公开(公告)日：2010-03-30
申请号：US11487403
申请日：2006-07-17
申请人： Jon Daley , Yoshiki Hishiro
发明人： Jon Daley , Yoshiki Hishiro
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0335 , G03F7/40
摘要： A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.
摘要翻译：公开了一种用于处理光致抗蚀剂图案的稳定溶液以及防止轮廓异常，倾倒和抵抗基脚的方法。稳定溶液包含非挥发性组分，例如在光致抗蚀剂材料已经显影之后施加的非挥发性颗粒或聚合物。通过在显影之后但干燥之前用含有非挥发性成分的溶液处理光致抗蚀剂，非挥发性组分填充相邻抗蚀剂图案之间的空间，并在干燥期间保留在基材上。非挥发性组分为抗蚀剂提供结构和机械支撑，以防止液体表面张力产生变形或塌陷。

8. 发明授权

US07119025B2 Methods of eliminating pattern collapse on photoresist patterns 有权
公开(公告)号：US07119025B2
公开(公告)日：2006-10-10
申请号：US10819936
申请日：2004-04-08
申请人： Jon Daley , Yoshiki Hishiro
发明人： Jon Daley , Yoshiki Hishiro
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0335 , G03F7/40
摘要： A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.

9. 发明授权

US06875552B2 Photoresist composition and method of making 失效
标题翻译：光刻胶组合物和制造方法
公开(公告)号：US06875552B2
公开(公告)日：2005-04-05
申请号：US10216340
申请日：2002-08-09
申请人： Yoshiki Hishiro
发明人： Yoshiki Hishiro
IPC分类号： G03F7/038 , G03F7/039 , G03F7/09 , G03F7/095 , G03F7/032
CPC分类号： G03F7/2004 , G03F7/0382 , G03F7/0392 , G03F7/091 , G03F7/095 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/146
摘要： The present invention provides a photoresist composition that reduces standing wave and side wall roughness. The composition comprises a first photoresist X and a second photoresist Y. The first photoresist X absorbs at a higher wavelength than the second photoresist Y. The second photoresist Y has a lower glass transitional temperature than the first photoresist X. A method for making the photoresist composition is also provided.
摘要翻译：本发明提供减少驻波和侧壁粗糙度的光致抗蚀剂组合物。该组合物包括第一光致抗蚀剂X和第二光致抗蚀剂Y.第一光致抗蚀剂X以比第二光致抗蚀剂Y更高的波长吸收。第二光致抗蚀剂Y具有比第一光致抗蚀剂X低的玻璃化转变温度。还提供了组合。

10. 发明授权

US5478680A Color filter 失效
标题翻译：滤色片
公开(公告)号：US5478680A
公开(公告)日：1995-12-26
申请号：US263353
申请日：1994-06-21
申请人： Yoshiki Hishiro , Naoki Takeyama , Shigeki Yamamoto
发明人： Yoshiki Hishiro , Naoki Takeyama , Shigeki Yamamoto
IPC分类号： G02B5/20 , G03F7/00 , G03F9/00
CPC分类号： G03F7/0007 , Y10S430/111 , Y10S430/122
摘要： A color filter having the thickness of 3 .mu.m or smaller and, on a substrate, having color filter elements which have different colors each other and are made from a resist compositions comprising an alkali soluble resin and dyes having a specific color within the wave length range from 400 nm to 700 nm, wherein each of the color filter elements has the minimum light transmittance of 25% or smaller, and the color filter is excellent in various properties such as resolution, color tone, color reproductivity and color depth and it has a small thickness.
摘要翻译：具有3μm或更小的厚度的滤色器，并且在基板上具有彼此不同颜色的滤色器元件，并且由包含碱溶性树脂的抗蚀剂组合物和在波长内具有特定颜色的染料制成范围从400nm到700nm，其中每个滤色器元件具有最小透光率为25％或更小，并且滤色器在诸如分辨率，色调，颜色再现性和颜色深度的各种性能方面是优异的，并且它具有厚度很小

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