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    • 1. 发明授权
    • Power circuit breaker and power resistor
    • 电源断路器和电源电阻
    • US5373129A
    • 1994-12-13
    • US28284
    • 1993-03-09
    • Naoki ShutohMotomasa ImaiFumio Ueno
    • Naoki ShutohMotomasa ImaiFumio Ueno
    • H01C7/10H01H33/16
    • H01C7/10H01H33/165
    • A compact power circuit breaker having a large breaking capacity and stable breaking performance by using a compact closing resistor unit having high performance. The power circuit breaker includes a main switch arranged in a current path, an auxiliary switch connected to the current path parallel with respect to the main switch and turned on prior to an ON state of the main switch, and a closing resistor unit connected in series with the auxiliary switch and incorporated with a resistor having a sintered body consisting of a Zn--Ti--Co--O--based oxide and having metal components consisting of titanium calculated as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol %, cobalt calculated as cobalt oxide (CoO) in an amount of 0.5 to 30 mol %, and Zn as substantially the balance.
    • 通过使用具有高性能的紧凑型闭合电阻器单元,具有大的分断能力和稳定的断开性能的紧凑型电力断路器。 电源断路器包括布置在电流路径中的主开关,辅助开关连接到电流路径,相对于主开关并联并在主开关的导通状态之前导通,以及闭合电阻器单元串联连接 与辅助开关一起并入具有由Zn-Ti-Co-O系氧化物构成的烧结体的电阻体,并具有以氧化钛(TiO 2)计为0.5〜25摩尔%的由钛构成的金属成分, 作为氧化钴(CoO)计算的钴的量为0.5〜30摩尔%,Zn为大致余量。
    • 7. 发明授权
    • Semiconductor memory device using ferroelectric capacitor and having
only one sense amplifier selected
    • 使用铁电电容器并且仅选择一个读出放大器的半导体存储器件
    • US5400275A
    • 1995-03-21
    • US712092
    • 1991-06-07
    • Kazuhide AbeHiroshi ToyodaKoji YamakawaMotomasa ImaiKoji Sakui
    • Kazuhide AbeHiroshi ToyodaKoji YamakawaMotomasa ImaiKoji Sakui
    • G11C11/22H01L27/115G11C7/00
    • H01L27/11502G11C11/22
    • A semiconductor memory device comprises a plurality of memory cells arranged in the form of a matrix to constitute rows-and columns, a plurality of first driving lines, connected to the memory cells, for transmitting a first driving signal to the memory cells, one of the plurality of first driving lines being selected by a row address, a plurality of second driving lines, connected to the memory cells, for transmitting a second driving signal to the memory cells, one of the plurality of second driving lines being selected by a column address, a plurality of read/write lines, connected to the memory cells, for performing read/write operations with respect to the memory cells, and a plurality of sense amplifiers connected to the read/ write lines, wherein one of the plurality of sense amplifiers is selected by the column address, and the memory cells in the same column are connected to the same sense amplifier through the read/write lines.
    • 一种半导体存储器件包括以矩阵形式布置以构成行和列的多个存储器单元,连接到存储器单元的多条第一驱动线,用于将第一驱动信号发送到存储器单元,其中之一 所述多个第一驱动线由行地址选择,多个第二驱动线连接到所述存储单元,用于将第二驱动信号发送到所述存储单元,所述多个第二驱动线中的一个由列选择 连接到存储器单元的多个读/写线,用于对存储单元执行读/写操作,以及连接到读/写线的多个读出放大器,其中多个感测中的一个 放大器由列地址选择,同一列中的存储单元通过读/写线连接到相同的读出放大器。
    • 9. 发明授权
    • Metal oxide varistor with non-diffusable electrodes
    • 具有非扩散电极的金属氧化物变阻器
    • US4516105A
    • 1985-05-07
    • US395278
    • 1982-07-06
    • Motomasa ImaiTakashi TakahashiOsamu FurukawaHideyuki Kanai
    • Motomasa ImaiTakashi TakahashiOsamu FurukawaHideyuki Kanai
    • H01C7/10C04B35/453H01C7/112C04B35/00
    • H01C7/112
    • Disclosed is a metal oxide varistor which comprises; a sintered body containing (a) ZnO as a principal component, and (b), as auxiliary components, Bi, Co and Mn in amounts of 0.05.about.2 mole %, 0.05.about.2 mole % and 0.05.about.2 mole %, when calculated in terms of Bi.sub.2 O.sub.3, Co.sub.2 O.sub.3 and MnO.sub.2, respectively, and at least one selected from Al, In and Ga in amounts of 1.times.10.sup.-4 .about.3.times.10.sup.-2 mole %, when calculated in terms of Al.sub.2 O.sub.3, In.sub.2 O.sub.3 and Ga.sub.2 O.sub.3, respectively; said sintered material having been reheated at a temperature of 650.degree..about.900.degree. C. after sintering; and a non-diffusible electrode provided on said sintered body. The metal oxide varistor has excellent pulse response and volt-ampere non-linearity even with respect to a pulse having a short rise time of less than a microsecond.
    • 公开了一种金属氧化物变阻器,其包括: 含有(a)ZnO作为主要成分的烧结体,和(b)作为辅助成分的Bi,Co和Mn,其量为0.05DIFFERENCE 2摩尔%,0.05差异2摩尔%和0.05差异2摩尔%,当计算 分别以Bi 2 O 3,Co 2 O 3和MnO 2为单位,以Al 2 O 3,In 2 O 3和Ga 2 O 3计算,选自Al,In和Ga中的至少1种为1×10 -4 DIFFERENCE 3×10 -2摩尔% 所述烧结材料在烧结后在650℃的温度下再加热; 以及设置在所述烧结体上的非扩散电极。 金属氧化物变阻器即使对于具有小于一微秒的短上升时间的脉冲也具有优异的脉冲响应和伏安非线性。