专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4882652A High dielectric constant type ceramic composition 失效
标题翻译：高介电常数陶瓷组合物
公开(公告)号：US4882652A
公开(公告)日：1989-11-21
申请号：US115908
申请日：1987-11-02
申请人： Osamu Furukawa , Mitsuo Harata , Takaaki Yasumoto , Motomasa Imai
发明人： Osamu Furukawa , Mitsuo Harata , Takaaki Yasumoto , Motomasa Imai
IPC分类号： H01G4/12 , C04B35/00 , C04B35/46 , C04B35/499 , H01B3/12
CPC分类号： C04B35/499
摘要： When a portion of the Pb of a Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 -based ceramic composition within the region bounded by lines connecting a, b, c, d, e and f points in the ternary composition diagram of the accompanying FIG. 1 is substituted by a small amount of Ca, a high dielectric constant type ceramic composition is obtained which has a small temperature coefficient of dielectric constant and which is effective as a material for multilayer ceramic capacitors.
摘要翻译：当Pb（Zn1 / 3Nb2 / 3）O3系陶瓷组合物的Pb的一部分在连接a，b，c，d，e和f的线所界定的区域内时，在图3的三元组成图中指出。 1被少量的Ca代替，获得了介电常数较小温度系数高的介电常数型陶瓷组合物，作为多层陶瓷电容器的材料是有效的。

2. 发明授权

US4767732A High dielectric constant ceramic material and method of manufacturing the same 失效
标题翻译：高介电常数陶瓷材料及其制造方法
公开(公告)号：US4767732A
公开(公告)日：1988-08-30
申请号：US90605
申请日：1987-08-28
申请人： Osamu Furukawa , Seiichi Yoshida , Motomasa Imai , Mitsuo Harata
发明人： Osamu Furukawa , Seiichi Yoshida , Motomasa Imai , Mitsuo Harata
IPC分类号： C04B35/46 , C04B35/45 , C04B35/468 , C04B35/472 , H01G4/12
CPC分类号： C04B35/4684 , C04B35/472 , H01G4/1227 , H01G4/1254
摘要： To obtain a ceramic material having a high dielectric constant (K=2300 to 7000), a high insulation resistance (CR=4000 to 18000 ohmF), a low temperature dependence (.+-.10%) to (.+-.22, -33%) upon dielectric constant over a wide temperature range (-55 and +125.degree. C.) and a relatively low sintering temperature (1000.degree. C. to 1250.degree. C.), BaTiO.sub.3 powder at least 50 wt % of which is 0.7 to 3 .mu.m in particle size) is mixed with another compound with perovskite structure mainly composed of oxides of Pb, Ba, Sr, Zn, Nb, Mg and Ti before sintering. Further, part of Ti of BaTiO.sub.3 is substitutable with Zr or Sn, and part of Ba of BaTiO.sub.3 is substitutable with Sr, Ca or Ce.
摘要翻译：为了获得具有高介电常数（K = 2300〜7000）的陶瓷材料，高绝缘电阻（CR = 4000〜18000ohmF），低温度依赖性（+/- 10％）〜（+/- 22， 33％）在较宽的温度范围（-55和+ 125℃）和相对低的烧结温度（1000℃至1250℃）下的介电常数，至少50重量％的BaTiO 3粉末为0.7 至3μm的粒径）与烧结前主要由Pb，Ba，Sr，Zn，Nb，Mg，Ti的氧化物构成的钙钛矿结构的其他化合物混合。此外，BaTiO3的Ti的一部分可以用Zr或Sn代替，BaTiO3的Ba的一部分可以用Sr，Ca或Ce代替。

3. 发明授权

US4772985A Thick film capacitor 失效
标题翻译：厚膜电容器
公开(公告)号：US4772985A
公开(公告)日：1988-09-20
申请号：US98240
申请日：1987-09-18
申请人： Takaaki Yasumoto , Osamu Furukawa , Nobuo Iwase , Mitsuo Harata , Masao Segawa
发明人： Takaaki Yasumoto , Osamu Furukawa , Nobuo Iwase , Mitsuo Harata , Masao Segawa
IPC分类号： C04B35/497 , C04B35/499 , H01G4/12 , H01G4/30 , C04B35/46 , H01G4/10 , H01G7/00
CPC分类号： C04B35/499 , C04B35/497 , H01G4/129 , H01G4/30 , Y10T29/435
摘要： Disclosed is a thick film capacitor comprising (a) a sintered layer of a ferroelectric material mainly consisting of one or more ferroelectric inorganic compounds having a perovskite structure and an inorganic binder having a eutectic composition which experiences a liquid phase at a temperature lower than the sintering temperature of the ferroelectric inorganic compounds, and (b) at least two electrodes formed on both surfaces of the sintered layer of the ferroelectric material. In the thick film capacitor of this invention, the perovskite structure of the ferroelectric inorganic compounds is not destroyed upon sintering. Therefore, a high degree of sintering, a good dielectric characteristic and high moisture and migration resistances can be obtained.
摘要翻译：公开了一种厚膜电容器，其包括（a）主要由具有钙钛矿结构的一种或多种铁电无机化合物和具有在低于烧结温度的温度下经历液相的共晶组成的无机粘合剂的铁电体材料的烧结层铁电体无机化合物的温度，（b）形成在铁电体的烧结层的两面的至少两个电极。在本发明的厚膜电容器中，铁电体无机化合物的钙钛矿结构在烧结时不破坏。因此，可以获得高度的烧结，良好的介电特性和高的湿度和迁移电阻。

4. 发明授权

US5155573A Ferroelectric capacitor and a semiconductor device having the same 失效
标题翻译：电解电容器和具有该电容器的半导体器件
公开(公告)号：US5155573A
公开(公告)日：1992-10-13
申请号：US633324
申请日：1990-12-24
申请人： Kazuhide Abe , Hiroshi Toyoda , Koji Yamakawa , Motomasa Imai , Mitsuo Harata , Koji Sakui
发明人： Kazuhide Abe , Hiroshi Toyoda , Koji Yamakawa , Motomasa Imai , Mitsuo Harata , Koji Sakui
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/92
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/60
摘要： A ferroelectric capacitor includes a ferroelectric layer consisting of lead zirconate titanate formed on a silicon substrate, a plurality of rectangular trenches formed in the direction of thickness of the ferroelectric layer with a ferroelectric material therebetween, and first and second electrodes consisting of metal tungsten buried in the trenches to oppose each other with the ferroelectric material therebetween.
摘要翻译：铁电电容器包括由在硅衬底上形成的锆钛酸铅构成的铁电层，在其间具有铁电体的铁电层的厚度方向上形成的多个矩形沟槽，以及埋入金属钨的第一和第二电极沟槽之间用铁电材料彼此相对。

5. 发明授权

US5517445A Non-volatile semiconductor memory device capable of electrically performing read and write operation and method of reading information from the same 失效
标题翻译：能够电性地执行读写操作的非挥发性半导体存储器件和从其读取信息的方法
公开(公告)号：US5517445A
公开(公告)日：1996-05-14
申请号：US784073
申请日：1991-10-30
申请人： Motomasa Imai , Kazuhide Abe , Koji Yamakawa , Hiroshi Toyoda , Yoshiko Kohanawa , Mitsuo Harata
发明人： Motomasa Imai , Kazuhide Abe , Koji Yamakawa , Hiroshi Toyoda , Yoshiko Kohanawa , Mitsuo Harata
IPC分类号： G11C11/22 , G11C17/04
CPC分类号： G11C11/22
摘要： A non-volatile semiconductor memory device, includes a memory cell having a capacitor formed by stacking a semiconductor layer and a ferroelectric layer between a pair of electrodes, the semiconductor layer and the ferroelectric layer forming a semiconductor-ferroelectric junction, a writing circuit in which a voltage higher than a coercive electric field of the ferroelectric material is applied to the capacitor of the memory cell to align a polarization direction of the ferroelectric layer in a predetermined direction so as to set a capacitance of the capacitor at a predetermined value, thereby writing data corresponding to the predetermined value of the capacitance, and a reading circuit in which a voltage less than the coercive electric field of the ferroelectric layer is applied to the capacitor of the memory cell in which the data is written, thereby reading the data.
摘要翻译：一种非易失性半导体存储器件，包括具有电容器的存储单元，所述电容器通过在一对电极之间堆叠半导体层和铁电层而形成，所述半导体层和形成半导体 - 铁电结的铁电层，其中写入电路将高于铁电材料的矫顽电场的电压施加到存储单元的电容器，以将铁电层的偏振方向沿预定方向对齐，以将电容器的电容设置在预定值，从而写入对应于电容的预定值的数据，以及读取电路，其中将低于铁电层的矫顽电场的电压施加到其中写入数据的存储单元的电容器，从而读取数据。

6. 发明授权

US5297077A Memory having ferroelectric capacitors polarized in nonvolatile mode 失效
标题翻译：具有以非易失性模式极化的铁电电容器的存储器
公开(公告)号：US5297077A
公开(公告)日：1994-03-22
申请号：US676546
申请日：1991-03-28
申请人： Motomasa Imai , Hiroshi Toyoda , Kazuhide Abe , Koji Yamakawa , Hisakazu Iizuka , Mitsuo Harata , Koji Sakui
发明人： Motomasa Imai , Hiroshi Toyoda , Kazuhide Abe , Koji Yamakawa , Hisakazu Iizuka , Mitsuo Harata , Koji Sakui
IPC分类号： G11C11/22 , G11C14/00
CPC分类号： G11C14/00 , G11C11/22
摘要： A semiconductor memory device comprises a ferroelectric capacitor, a voltage output circuit for outputting a first voltage for reversely polarizing the ferroelectric capacitor and a second voltage by which the polarization of the ferroelectric capacitor is not reversed, regardless of data stored in the ferroelectric capacitor, a first reference capacitor having a such a capacitance as to accumulate less charge than charge which the ferroelectric capacitor accumulates, when the second voltage is applied to the ferroelectric capacitor, a second reference capacitor having such a capacitance that as to accumulate greater charge than the charge which the ferroelectric capacitor accumulates while the ferroelectric capacitor is forwardly polarized, when the first voltage is applied to the ferroelectric capacitor, thus reversely polarizing the ferroelectric capacitor, a sense amplifier connected to the ferroelectric capacitor and the first or second reference capacitor, a reference-capacitor selecting circuit for connecting the first reference capacitor to the sense amplifier when the voltage output circuit outputs the second voltage, and connecting the second reference capacitor to the sense amplifier while the voltage output circuit outputs the first voltage, and a circuit for determining data from the presence or absence of an electric charge in the ferroelectric capacitors while the memory is set in volatile mode, and for determining data from the direction in which the ferroelectric capacitor is polarized, while the memory is set in nonvolatile mode.
摘要翻译：半导体存储器件包括铁电电容器，用于输出用于使强电介质电容器反向极化的第一电压的电压输出电路和强电介质电容器的极化不反转的第二电压，而与铁电电容器中存储的数据无关第一参考电容器具有这样的电容，即当第二电压被施加到铁电电容器时，积累比铁电电容器累积的电荷少的电荷，第二参考电容器具有这样的电容，以便积累比电荷更大的电荷当铁电电容器向前偏振时，铁电电容器累积，当第一电压施加到铁电电容器时，从而使铁电电容器反向极化，连接到铁电电容器和第一或第二参考电容器的读出放大器，参考电容器 s 选择电路，用于当电压输出电路输出第二电压时将第一参考电容器连接到读出放大器，并且在电压输出电路输出第一电压时将第二参考电容器连接到读出放大器;以及电路，用于从当存储器被设置为易失性模式时，铁电电容器中存在或不存在电荷，并且用于从存储器设置为非易失性模式时从铁电电容器被极化的方向确定数据。

7. 发明授权

US4701767A Magnetic recording head and method for manufacturing 失效
标题翻译：磁记录头及制造方法
公开(公告)号：US4701767A
公开(公告)日：1987-10-20
申请号：US870898
申请日：1986-06-05
申请人： Motomasa Imai , Mitsuo Harata , Takashi Takahashi , Kazuo Nishijima
发明人： Motomasa Imai , Mitsuo Harata , Takashi Takahashi , Kazuo Nishijima
IPC分类号： G03G15/05 , B41J2/395 , G03G19/00 , G01D15/12
CPC分类号： G03G19/00
摘要： A method is disclosed which manufactures a recording head adapted to be moved relative to a recording medium, which is comprised of a conductive substrate and dielectric layer formed on the conductive substrate, to permit data to be recorded on the recording medium with the use of a conductive/magnetic toner on the recording medium. A conductive/magnetic sheet is attached to an insulating substrate of a first size with an adhesive layer therebetween, the first size of the insulating substrate is greater than a second size thereof defined by an insulating substrate of a finally completed recording head. The conductive/magnetic sheet is selectively etched to form an array of slits at a predetermined interval with both ends of the slits located beyond the side edges of an insulating substrate of a finally completed recording head. At one side edge portion of the conductive/magnetic sheet the conductive/magnetic sheet is electroplated to form a plated layer for a bonding pad. Those areas of the conductive/magnetic sheet, plated layer and insulating substrate, which are located beyond the side edge of the insulating substrate of the finally completed recording head, are cut to form a parallel array of electrodes and a bonding pad on one side edge portion of the conductive/magnetic electrodes.
摘要翻译：公开了一种制造适于相对于记录介质移动的记录头的方法，该记录介质由形成在导电基底上的导电基底和电介质层组成，以便使用数据记录在记录介质上导电/磁性调色剂在记录介质上。将导电/磁性薄片附着在第一尺寸的绝缘基板上，其间具有粘合剂层，绝缘基板的第一尺寸大于由最终完成的记录头的绝缘基板限定的第二尺寸。选择性地蚀刻导电/磁性薄片以形成狭缝阵列，以预定的间隔，狭缝的两端位于最终完成的记录头的绝缘基底的侧边缘之外。在导电/磁性片的一个侧边缘部分，电导/磁性片被电镀以形成用于焊盘的镀层。将位于超过最终完成的记录头的绝缘衬底的侧边缘的导电/磁性片，镀层和绝缘衬底的那些区域切割成在一个侧边缘上形成平行的电极阵列和焊盘部分导电/磁极。

8. 发明授权

US4818736A High dielectric constant type ceramic composition 失效
标题翻译：高介电常数陶瓷组合物
公开(公告)号：US4818736A
公开(公告)日：1989-04-04
申请号：US157149
申请日：1988-02-11
申请人： Yohachi Yamashita , Osamu Furukawa , Mitsuo Harata , Takashi Takahashi
发明人： Yohachi Yamashita , Osamu Furukawa , Mitsuo Harata , Takashi Takahashi
IPC分类号： C04B35/499 , H01G4/12 , C04B35/46
CPC分类号： C04B35/499 , H01G4/1218 , H01G4/1254
摘要： When a portion of the Pb of a Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 -based ceramic composition within the region bounded by lines connecting a, b, c and d points in the ternary composition diagram of the accompanying FIG. 1 is substituted by a small amount of Ba and/or Sr, a high dielectric constant type ceramic composition which has a small temperature coefficient of dielectric constant and which is effective as a material for multilayer ceramic capacitors is obtained.
摘要翻译：当Pb（Zn1 / 3Nb2 / 3）O3系陶瓷组合物的Pb的一部分在由连接a，b，c和d的线连接的区域内，在附图3的三元组成图中指出。 1被少量的Ba和/或Sr代替，获得了介电常数小的并且作为多层陶瓷电容器的材料有效的高介电常数型陶瓷组合物。

9. 发明授权

US5182695A Ceramic composition and electronic part using the same 失效
标题翻译：陶瓷组合物和使用该组合物的电子部件
公开(公告)号：US5182695A
公开(公告)日：1993-01-26
申请号：US743361
申请日：1991-08-22
申请人： Kiyoji Handa , Satoshi Mukaeda , Hideyuki Kanai , Yohachi Yamashita , Osamu Furukawa , Mitsuo Harata
发明人： Kiyoji Handa , Satoshi Mukaeda , Hideyuki Kanai , Yohachi Yamashita , Osamu Furukawa , Mitsuo Harata
IPC分类号： C04B35/00 , C04B35/497 , H01B3/12 , H01G4/12
CPC分类号： C04B35/497 , H01B3/12 , H01G4/1254
摘要： A ceramic composition which forms, when sintered, a dielectric having a crystal structure represented by the general formula:[Pb.sub.1-x A.sub.x ].sub.[A] (B.sub.1,B.sub.2).sub.[B] O.sub.3where A is at least one element selected from the group consisting of Ca, Sr, Ba, Ag, La and Nd, B.sub.1 is at least one element selected from the group consisting of Mg, Zn, Ni, Co, Fe, Mn and In, B.sub.2 is at least one element selected from the group consisting of Nb, W, Ta and Sb, x is 0 to 0.5, and the molar ratio of [A]/[B] is 0.995 or more, but 0.99 or less.
摘要翻译： PCT No.PCT / JP90 / 01669 Sec。 371日期：1991年7月23日 102（e）日期1991年7月23日PCT 1990年12月21日PCT PCT。出版物WO91 / 09814 日期：1991年7月11日。一种陶瓷组合物，其在烧结时形成具有由以下通式表示的晶体结构的电介质：[Pb1-xAx] [A]（B1，B2）[B] O3，其中A至少选自由Ca，Sr，Ba，Ag，La和Nd组成的组中的一种元素，B1是选自Mg，Zn，Ni，Co，Fe，Mn和In中的至少一种元素，B2至少为选自Nb，W，Ta和Sb中的一种元素，x为0至0.5，[A] / [B]的摩尔比为0.995以上，0.99以下。

10. 发明授权

US5059566A High-dielectric constant ceramic composite and ceramic capacitor elements 失效
标题翻译：高介电常数陶瓷复合材料和陶瓷电容元件
公开(公告)号：US5059566A
公开(公告)日：1991-10-22
申请号：US457502
申请日：1989-12-27
申请人： Hideyuki Kanai , Yohachi Yamashita , Osamu Furukawa , Mitsuo Harata
发明人： Hideyuki Kanai , Yohachi Yamashita , Osamu Furukawa , Mitsuo Harata
IPC分类号： C03C3/064 , C03C3/091 , C04B35/195 , C04B35/499 , H01B3/12 , H01G4/12 , H01L41/187
CPC分类号： H01G4/1227 , C03C3/064 , C03C3/091 , C04B35/195 , C04B35/499 , H01B3/12 , H01G4/1254 , H01G4/129 , H01L41/187
摘要： A high-dielectric constant ceramic composite is provided in which an appropriate amount of glass component is added to a composite of the BaTiO.sub.3 -PbMO.sub.3 group having a low temperature coefficient in the dielectric constant thereof. The added glass component serves to maintain the satisfactory properties of the ceramic composite even after various types of reliability tests.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式