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1. 发明授权

US5254816A Power circuit breaker and power resistor 失效
标题翻译：电源断路器和电源电阻
公开(公告)号：US5254816A
公开(公告)日：1993-10-19
申请号：US859868
申请日：1992-03-30
申请人： Naoki Shutoh , Motomasa Imai , Fumio Ueno , Hideyasu Andoh , Shoji Kozuka , Hiroshi Endo , Iwao Mitsuishi
发明人： Naoki Shutoh , Motomasa Imai , Fumio Ueno , Hideyasu Andoh , Shoji Kozuka , Hiroshi Endo , Iwao Mitsuishi
IPC分类号： H01C7/10 , H01C7/112 , H01H33/16
CPC分类号： H01H33/165 , H01C7/112
摘要： According to this invention, there is disclosed a compact power circuit breaker having a large breaking capacity and stable breaking performance due to a compact closing resistor unit having high performance. The power circuit breaker includes a main switching mechanism having an arc extinguishing function, an auxiliary switching mechanism parallelly connected to the main switching mechanism and having an arc extinguishing function, and a closing resistor unit connected in series with the auxiliary switching mechanism and incorporated with a resistor containing zinc oxide (ZnO) as a main component and titanium figured out as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol% and nickel figured out as nickel oxide (NiO) in an amount of 0.5 to 30 mol. % as sub-components.

2. 发明授权

US5373129A Power circuit breaker and power resistor 失效
标题翻译：电源断路器和电源电阻
公开(公告)号：US5373129A
公开(公告)日：1994-12-13
申请号：US28284
申请日：1993-03-09
申请人： Naoki Shutoh , Motomasa Imai , Fumio Ueno
发明人： Naoki Shutoh , Motomasa Imai , Fumio Ueno
IPC分类号： H01C7/10 , H01H33/16
CPC分类号： H01C7/10 , H01H33/165
摘要： A compact power circuit breaker having a large breaking capacity and stable breaking performance by using a compact closing resistor unit having high performance. The power circuit breaker includes a main switch arranged in a current path, an auxiliary switch connected to the current path parallel with respect to the main switch and turned on prior to an ON state of the main switch, and a closing resistor unit connected in series with the auxiliary switch and incorporated with a resistor having a sintered body consisting of a Zn--Ti--Co--O--based oxide and having metal components consisting of titanium calculated as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol %, cobalt calculated as cobalt oxide (CoO) in an amount of 0.5 to 30 mol %, and Zn as substantially the balance.
摘要翻译：通过使用具有高性能的紧凑型闭合电阻器单元，具有大的分断能力和稳定的断开性能的紧凑型电力断路器。电源断路器包括布置在电流路径中的主开关，辅助开关连接到电流路径，相对于主开关并联并在主开关的导通状态之前导通，以及闭合电阻器单元串联连接与辅助开关一起并入具有由Zn-Ti-Co-O系氧化物构成的烧结体的电阻体，并具有以氧化钛（TiO 2）计为0.5〜25摩尔％的由钛构成的金属成分，作为氧化钴（CoO）计算的钴的量为0.5〜30摩尔％，Zn为大致余量。

3. 发明授权

US5629666A Power resistor, method of manufacturing the same, and power circuit breaker 失效
标题翻译：功率电阻，制造方法及电源断路器
公开(公告)号：US5629666A
公开(公告)日：1997-05-13
申请号：US445725
申请日：1995-05-22
申请人： Motomasa Imai , Naoki Shutoh , Fumio Ueno
发明人： Motomasa Imai , Naoki Shutoh , Fumio Ueno
IPC分类号： H01C7/108 , H01C7/10
CPC分类号： H01C7/108
摘要： Disclosed is a power resistor which has a large heat capacity per unit volume and an appropriate and stable electrical resistance, and in which the resistance changes little with time due to surge absorption. This power resistor includes a sintered body containing aluminum oxide and carbon, and a pair of electrodes formed on the two opposing surfaces of the sintered body. This sintered body consists of first regions containing a small amount of carbon or not containing carbon and second regions containing a larger amount of carbon than in the first regions and so arranged as to be connected to the electrodes.
摘要翻译：公开了一种功率电阻器，其具有每单位体积的大的热容量和适当且稳定的电阻，并且由于浪涌吸收，电阻随时间变化很小。该功率电阻器包括含有氧化铝和碳的烧结体以及形成在烧结体的两个相对表面上的一对电极。该烧结体由含有少量碳或不含碳的第一区域和包含比第一区域中的碳含量更大的第二区域组成，并且被布置为连接到电极。

4. 发明授权

US5509558A Metal oxide resistor, power resistor, and power circuit breaker 失效
标题翻译：金属氧化物电阻，功率电阻和电源断路器
公开(公告)号：US5509558A
公开(公告)日：1996-04-23
申请号：US275523
申请日：1994-07-15
申请人： Motomasa Imai , Naoki Shutoh , Katsuyoshi Oh-Ishi , Fumio Ueno , Hideo Ohkuma , Yuji Katsumura , Masaki Kobayashi , Toshiyuki Takahashi
发明人： Motomasa Imai , Naoki Shutoh , Katsuyoshi Oh-Ishi , Fumio Ueno , Hideo Ohkuma , Yuji Katsumura , Masaki Kobayashi , Toshiyuki Takahashi
IPC分类号： C04B35/628 , H01C1/142 , H01C7/00 , H01H33/16 , H01C7/10 , H01C8/00
CPC分类号： C04B35/6264 , C04B35/01 , C04B35/013 , C04B35/053 , C04B35/103 , C04B35/117 , C04B35/14 , C04B35/185 , C04B35/195 , C04B35/20 , C04B35/44 , C04B35/443 , C04B35/453 , C04B35/46 , C04B35/481 , C04B35/62839 , C04B35/634 , C04B35/63404 , C04B35/63424 , C04B35/63436 , C04B35/63444 , C04B35/63448 , C04B35/63456 , C04B35/63468 , C04B35/636 , C04B35/6365 , H01C1/142 , H01C7/001 , C04B2235/3203 , C04B2235/3206 , C04B2235/3217 , C04B2235/3284 , C04B2235/349 , C04B2235/424 , C04B2235/48 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/658 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/85 , C04B2235/96
摘要： A metal oxide resistor for suppressing variations in resistivity in use in an atmosphere at a high temperature or humidity. Such a metal oxide resistor includes a sintered body in which carbon particles having an average grain size of 1 .mu.m or less exist in the grain boundaries of metal oxide particles in an amount of 0.05 to 3 wt %, and electrodes formed on at least two opposing surfaces of the sintered body.
摘要翻译：一种金属氧化物电阻器，用于抑制在高温或高湿气氛中使用的电阻率变化。这种金属氧化物电阻器包括烧结体，其中平均粒径为1μm以下的碳粒子以0.05〜3重量％的量存在于金属氧化物粒子的晶界中，电极形成在至少两个烧结体的相对表面。

5. 发明授权

US5126293A Light-shielding a delta n sintered body and method of manufacturing the same 失效
标题翻译：遮光三角形烧结体及其制造方法
公开(公告)号：US5126293A
公开(公告)日：1992-06-30
申请号：US625989
申请日：1990-11-29
申请人： Mitsuo Kasori , Akihiro Horiguchi , Fumio Ueno , Yoshiko Goto , Naoki Shutoh
发明人： Mitsuo Kasori , Akihiro Horiguchi , Fumio Ueno , Yoshiko Goto , Naoki Shutoh
IPC分类号： C04B35/581 , H05K1/03
CPC分类号： C04B35/581 , H05K1/0306
摘要： A light-shielding aluminum nitride sintered body essentially consists of aluminum nitride crystal grains and 0.01 to 1.5 wt % (an element content in the case of a transition metal compound) of homogeneously dispersed transition metal particles and/or transition metal compound particles having an average particle size of 5 .mu.m or less and has a thermal conductivity of 200 W/m.K or more.
摘要翻译：遮光型氮化铝烧结体主要由氮化铝晶粒和0.01〜1.5重量％（过渡金属化合物的情况下的元素含量）均匀分散的过渡金属粒子和/或具有平均值的过渡金属化合物粒子组成粒径为5μm以下，导热率为200W / mK以上。

6. 发明授权

US5182540A Electrical resistor element and method of manufacturing the same 失效
标题翻译：电阻元件及其制造方法
公开(公告)号：US5182540A
公开(公告)日：1993-01-26
申请号：US662628
申请日：1991-02-28
申请人： Naoki Shuto , Fumio Ueno , Yoshiko Goto , Akihiro Horiguchi , Mitsuo Kasori , Motomasa Imai
发明人： Naoki Shuto , Fumio Ueno , Yoshiko Goto , Akihiro Horiguchi , Mitsuo Kasori , Motomasa Imai
IPC分类号： H01C7/00 , C04B35/26 , H01C7/04 , H01C7/12
CPC分类号： C04B35/2666 , H01C7/046
摘要： A resistor element includes a hollow cylindrical sintered body and a pair of electrodes formed on the upper and lower surfaces of the sintered body. The sintered body contains ferrite as a main constituent and contains 0.05 to 10% by volume of an insulator phase formed at the crystal grain boundary of the ferrite crystals. An insulating layer is formed to cover the side surface of the sintered body. The sintered body contains an oxide material selected from the group consisting of 0.005 to 2.0% by weight of bismuth oxide calculated in terms of Bi.sub.2 O.sub.3, 0.01 to 3.0% by weight and 0.005 to 2.0% by weight of silicon oxide and aluminum oxide calculated in terms of SiO.sub.2 and Al.sub.2 O.sub.3 respectively, and 0.01 to 3.5% by weight and 0.001 to 1.6% by weight of silicon oxide and calcium oxide calculated in terms of SiO.sub.2 and CaO, respectively.

7. 发明授权

US4847221A AlN sintered body having high thermal conductivity and a method of fabricating the same 失效
标题翻译：具有高导热性的AlN烧结体及其制造方法
公开(公告)号：US4847221A
公开(公告)日：1989-07-11
申请号：US142818
申请日：1988-01-11
申请人： Akihiro Horiguchi , Fumio Ueno , Mitsuo Kasori , Yoshiko Sato , Masaru Hayashi , Hiroshi Endo , Kazuo Shinozaki , Akihiko Tsuge
发明人： Akihiro Horiguchi , Fumio Ueno , Mitsuo Kasori , Yoshiko Sato , Masaru Hayashi , Hiroshi Endo , Kazuo Shinozaki , Akihiko Tsuge
IPC分类号： C04B35/581
CPC分类号： C04B35/581
摘要： According to the present invention, there is provided an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of a AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen. According to the present invention, there is provided a method of fabricating an aluminum nitride sintered body having a high thermal conductivity and essentially consisting of AlN single-phase, containing 0.01 to 8,000 ppm of rare earth elements and less than 2,000 ppm of oxygen, wherein a molded body prepared by mixing and molding an aluminum nitride power having less than 7 wt % of oxygen and an average particle size of 0.05 to 5 .mu.m and with rare earth compounds of 0.01 to 15 wt % of based on rare earth elements content, or a sintered AlN body containing oxide grain boundary phases of 0.01 to 15 wt % of rare earth elements and 0.01 to 20 wt % of oxygen and (rare earth element)--Al--O compounds phases and/or (rare earth element)--O compounds phases, is fired in a reducing atmosphere at a temperature of 1,550 to 2,050.degree. C. for 4 hours or more.
摘要翻译：根据本发明，提供了一种具有高导热性且基本上由含有0.01至8,000ppm的稀土元素和小于2,000ppm的氧的AlN单相组成的氮化铝烧结体。根据本发明，提供一种制造具有高导热性且基本由AlN单相组成的氮化铝烧结体的方法，该AlN单相含有0.01至8,000ppm的稀土元素和小于2,000ppm的氧，其中通过将少于7重量％的氧和平均粒径为0.05〜5μm的氮化铝粉末和基于稀土元素含量为0.01〜15重量％的稀土类化合物混合成型而制备的成型体，或含有0.01〜15重量％的稀土元素和0.01〜20重量％的氧和（稀土元素）-Al-O化合物相和/或（稀土元素）-Oi的氧化物晶界相的烧结AlN体化合物相在1550〜2050℃的温度下在还原气氛中烧成4小时以上。

8. 发明授权

US6110596A Silicon nitride ceramic circuit substrate and semiconductor device using the same 失效
标题翻译：氮化硅陶瓷电路基板及使用其的半导体器件
公开(公告)号：US6110596A
公开(公告)日：2000-08-29
申请号：US721346
申请日：1996-09-26
申请人： Mitsuo Kasori , Akihiro Horiguchi , Hiroyasu Sumino , Fumio Ueno
发明人： Mitsuo Kasori , Akihiro Horiguchi , Hiroyasu Sumino , Fumio Ueno
IPC分类号： H05K1/05 , C04B37/02 , H01L23/14 , H05K3/38 , C04B35/58
CPC分类号： C04B35/645 , C03C8/24 , C04B35/584 , C04B35/64 , C04B37/025 , H05K3/38 , C04B2235/3208 , C04B2235/3217 , C04B2235/3225 , C04B2235/3229 , C04B2235/3232 , C04B2235/3258 , C04B2235/3878 , C04B2235/3895 , C04B2235/447 , C04B2235/5445 , C04B2235/6025 , C04B2235/658 , C04B2235/72 , C04B2235/96 , C04B2235/9607 , C04B2237/10 , C04B2237/366 , C04B2237/402 , C04B2237/405 , C04B2237/407 , C04B2237/592 , C04B2237/62 , C04B2237/704 , C04B2237/706 , C04B2237/708 , C04B2237/86 , H01L2224/48091 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , Y10T428/24975 , Y10T428/265
摘要： Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.
摘要翻译：公开了一种电路基板，其包括在室温下为80W / mK以上的导热性的氮化硅陶瓷板1和通过玻璃层3与氮化硅陶瓷板1接合的金属板2，以及半导体装置其中安装有电路基板。

9. 发明授权

US5581087A Radiation detector 失效
标题翻译：辐射检测器
公开(公告)号：US5581087A
公开(公告)日：1996-12-03
申请号：US384747
申请日：1995-02-07
申请人： Ashraf Uddin , Fumio Ueno
发明人： Ashraf Uddin , Fumio Ueno
IPC分类号： G01T1/20 , G01T1/24 , H01L31/0232 , H01L31/0312 , H01L31/09 , H01L31/101
CPC分类号： H01L31/0312 , H01L31/02322
摘要： A radiation detector includes a photodiode composed of an .alpha.-SiC substrate of a first conductivity type, a first .alpha.-SiC layer of the first conductivity type epitaxially formed on the .alpha.-SiC substrate, a second .alpha.-SiC layer of a second conductivity type having higher carriers concentration than the first .alpha.-SiC layer and epitaxially formed on the first .alpha.-SiC layer, a first electrode formed on the .alpha.-SiC substrate in ohmic contact, and a second electrode formed on the second .alpha.-SiC layer in ohmic contact; and a phosphor layer disposed on the photodiode to emit ultraviolet-rays by exposure of radiations.
摘要翻译：辐射检测器包括由第一导电类型的α-SiC衬底，外延形成在α-Si衬底上的第一导电类型的第一α-SiC层，第二导电类型的第二α-SiC层，具有比第一α-SiC层高的载流子浓度并且在第一α-SiC层上外延形成的第一电极，形成在欧姆接触的α-SiC基板上的第一电极，以及形成在第二α-SiC层上的第二电极，欧姆联系; 以及设置在光电二极管上以通过辐射曝光而发射紫外线的荧光体层。

10. 发明授权

US4883780A Aluminum nitride sintered body and preparation thereof 失效
标题翻译：氮化铝烧结体及其制备方法
公开(公告)号：US4883780A
公开(公告)日：1989-11-28
申请号：US157150
申请日：1988-02-11
申请人： Mituo Kasori , Kazuo Shinozaki , Kazuo Anzai , Akihiko Tsuge , Hiroshi Imagawa , Takeshi Takano , Fumio Ueno , Akihiro Horiguchi , Hiroshi Inoue
发明人： Mituo Kasori , Kazuo Shinozaki , Kazuo Anzai , Akihiko Tsuge , Hiroshi Imagawa , Takeshi Takano , Fumio Ueno , Akihiro Horiguchi , Hiroshi Inoue
IPC分类号： C04B35/58 , C04B35/581
CPC分类号： C04B35/581
摘要： There are disclosed an aluminum sintered body comprising(a) aluminum nitride,(b) at least one compound selected from the group consisting of an aluminum compound of a rare earth metal, an aluminum compound of an alkaline earth metal, and an aluminum compound of a rare earth metal and an alkaline earth metal, and(c) at least one element selected from the transition elements consisting of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one compound containing said element,and a process for preparing the same comprising mixing aluminum nitride with(i) at least one of compound selected from the group consisting of a rare earth metal and/or an alkaline earth metal; and(ii) at least one of element selected from the group consisting of a transition element of Groups IVa, Va, VIa, VIIa and VIII of the periodic table, and/or at least one of a compound containing said element;and then molding and sintering the mixture.
摘要翻译：公开了一种铝烧结体，其包含（a）氮化铝，（b）至少一种选自稀土金属的铝化合物，碱土金属的铝化合物和铝化合物的化合物稀土金属和碱土金属，和（c）选自元素周期表第Ⅳa，Ⅴa，Ⅵa，Ⅶa和Ⅷ族的过渡元素中的至少一种元素，和/或含有所述元素的至少一种化合物和其制备方法包括将氮化铝与（i）选自稀土金属和/或碱土金属的化合物中的至少一种化合物混合; 和（ii）选自元素周期表第Ⅳa，Ⅴa，Ⅵa，Ⅶa和Ⅷ族的过渡元素的元素中的至少一种，和/或含有所述元素的化合物中的至少一种; 然后成型和烧结混合物。

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