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1. 发明授权

US5918111A Method and apparatus for manufacturing chalcopyrite semiconductor thin films 失效
公开(公告)号：US5918111A
公开(公告)日：1999-06-29
申请号：US613497
申请日：1996-03-11
申请人： Naoki Kohara , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
发明人： Naoki Kohara , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
IPC分类号： C23C14/06 , C23C14/54 , C30B23/02 , H01L31/032 , H01L31/18
CPC分类号： H01L31/0322 , C23C14/0623 , C23C14/541 , C30B23/002 , C30B23/02 , C30B29/46 , Y02E10/541
摘要： The method and the apparatus of manufacturing the I-III-VI.sub.2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder and heater which are in the vacuum chamber and Mo-coated glass substrate on which Cu(In,Ga)Se.sub.2 films are deposited. The change of the substrate temperature is monitored by the use of a heating element to heat the substrate by releasing a certain quantity of heat, a mechanism of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source for the heating element to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.

2. 发明授权

US6162296A Method and apparatus for manufacturing chalcopyrite semiconductor thin films 有权
标题翻译：制造黄铜矿半导体薄膜的方法和装置
公开(公告)号：US6162296A
公开(公告)日：2000-12-19
申请号：US252388
申请日：1999-02-18
申请人： Naoki Kohara , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
发明人： Naoki Kohara , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
IPC分类号： C23C14/06 , C23C14/54 , C30B23/02 , H01L31/032 , C23C14/26
CPC分类号： H01L31/0322 , C23C14/0623 , C23C14/541 , C30B23/002 , C30B23/02 , C30B29/46 , Y02E10/541
摘要： The method and the apparatus of manufacturing the I-III-VI.sub.2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder and heater which are in the vacuum chamber and Mo-coated glass substrate on which Cu(In,Ga)Se.sub.2 films are deposited. The change of the substrate temperature is monitored by the use of a heating element to heat the substrate by releasing a certain quantity of heat, a mechanism of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source for the heating element to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.
摘要翻译：本发明的I-III-VI2型黄铜矿半导体薄膜的制造方法和装置通过在形成薄膜期间监测薄膜的成分，容易地控制薄膜组合并提高薄膜的再现性。该装置包括位于其中沉积有Cu（In，Ga）Se2膜的真空室和Mo涂覆的玻璃基板中的基板保持器和加热器。通过使用加热元件通过释放一定量的热来加热衬底来监测衬底温度的变化，测量加热衬底的温度的机理。通过使用用于加热元件的电源将基板保持在一定温度并监视供应到加热元件的功率的变化的机构来监测供电的变化。衬底温度或功率的变化可以与膜组成相关。

3. 发明授权

US5500056A Solar cell containing low melting point glass layer 失效
标题翻译：含有低熔点玻璃层的太阳能电池
公开(公告)号：US5500056A
公开(公告)日：1996-03-19
申请号：US274722
申请日：1994-07-18
申请人： Takahiro Wada , Mitsusuke Ikeda , Mikihiko Nishitani , Masaharu Terauchi , Takayuki Negami , Naoki Kohara
发明人： Takahiro Wada , Mitsusuke Ikeda , Mikihiko Nishitani , Masaharu Terauchi , Takayuki Negami , Naoki Kohara
IPC分类号： H01L31/0216 , H01L31/0336 , H01L31/0392 , H01L31/0725 , H01L31/0749 , H01L31/04 , H01L31/0203
CPC分类号： H01L31/0749 , H01L31/02167 , H01L31/0392 , H01L31/03925 , H01L31/0725 , Y02E10/541
摘要： A solar cell includes a compound semiconductor, which is a laminated film having compound semiconductor layers, and low melting point glass. When the solar cell is heated by fire, the low melting point glass melts to seal the compound semiconductor so that toxic substances contained in the compound semiconductor are not released into the air.
摘要翻译：太阳能电池包括具有化合物半导体层的层叠膜和低熔点玻璃的化合物半导体。当太阳能电池被火加热时，低熔点玻璃熔化以密封化合物半导体，使得包含在化合物半导体中的有毒物质不会释放到空气中。

4. 发明授权

US6023020A Solar cell and method for manufacturing the same 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US6023020A
公开(公告)日：2000-02-08
申请号：US950204
申请日：1997-10-14
申请人： Mikihiko Nishitani , Takayuki Negami , Naoki Kohara , Takahiro Wada , Yasuhiro Hashimoto
发明人： Mikihiko Nishitani , Takayuki Negami , Naoki Kohara , Takahiro Wada , Yasuhiro Hashimoto
IPC分类号： H01L31/032 , H01L31/0336
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.2 by contacting the surface of the semiconductor with a solution in which a salt containing group IIIb elements, an organic substance containing group VIb elements and acid are mixed.
摘要翻译：提供了利用黄铜矿半导体并降低pn结的结界面上的缺陷密度的太阳能电池。该太阳能电池包括基板，形成在基板上的背面电极，形成在背面电极上的p型黄铜矿半导体薄膜，形成为与p型黄铜矿形成pn结的n型半导体薄膜半导体薄膜和形成在n型半导体薄膜上的透明电极。在p型黄铜矿半导体薄膜和n型半导体薄膜之间形成具有比p型黄铜矿半导体更高的电阻率的材料。由该材料制成的薄膜可以通过从溶液中沉积而形成。例如，通过使半导体的表面与含有IIIb族元素的盐，含有VIb族元素的有机物质和酸混合的溶液与CuInSe 2的p型黄铜矿类半导体的表面形成CuInS 2，。

5. 发明授权

US5858121A Thin film solar cell and method for manufacturing the same 失效
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：US5858121A
公开(公告)日：1999-01-12
申请号：US712025
申请日：1996-09-11
申请人： Takahiro Wada , Mikihiko Nishitani , Naoki Kohara
发明人： Takahiro Wada , Mikihiko Nishitani , Naoki Kohara
IPC分类号： H01L31/04 , H01L31/032 , H01L31/0336
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A thin film solar cell having high conversion efficiency is provided. The band gap of the thin film solar cell can be controlled while keeping the quality superior to conventional solar cells. The absorber layer for photovoltaic energy conversion is a Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution where X and Y are in the range of the following Equation:0.317+0.176Y.gtoreq.X.gtoreq.0.117+0.176Y1>X+Y>0Y>0,The Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution has a specific chalcopyrite type crystal structure and its lattice constant ratio of c-axis to a-axis is extremely close to two. It is most preferable that the band gap is 1.4 eV, X is 0.3, and Y is 0.4, since the conversion efficiency of a homojunction solar cell will then become a maximum.
摘要翻译：提供了具有高转换效率的薄膜太阳能电池。可以在保持质量优于常规太阳能电池的同时控制薄膜太阳能电池的带隙。用于光能转换的吸收层是基于Cu（In1-XGaX）（Se1-YSY）2）的固溶体，其中X和Y在以下等式的范围内：0.317 + 0.176Y> / = X> / = 0.117+ 0.176Y 1> X + Y> 0 Y> 0，Cu（In1-XGaX）（Se1-YSY）2系固溶体具有特定的黄铜矿型晶体结构，其c轴与a轴的晶格常数比为非常接近两个。最优选的是，带隙为1.4eV，X为0.3，Y为0.4，因为同功型太阳能电池的转换效率将变得最大。

6. 发明授权

US09107637B2 X-ray imaging apparatus and wavefront measuring apparatus 有权
标题翻译： X射线成像装置和波前测量装置
公开(公告)号：US09107637B2
公开(公告)日：2015-08-18
申请号：US13511896
申请日：2011-01-21
申请人： Chidane Ouchi , Naoki Kohara
发明人： Chidane Ouchi , Naoki Kohara
IPC分类号： A61B6/00 , A61B6/06 , G21K1/06 , A61B6/02
CPC分类号： A61B6/484 , A61B6/027 , A61B6/06 , A61B6/4291 , G21K1/06 , G21K2207/005
摘要： There is provided an X-ray imaging apparatus which images a specimen. The X-ray imaging apparatus comprises: an X-ray source; a diffraction grating configured to diffract an X-ray from the X-ray source; an X-ray detector configured to detect the X-ray diffracted by the diffraction grating; and a calculator configured to calculate phase information of the specimen on the basis of an intensity distribution of the X-ray detected by the X-ray detector, wherein the calculator obtains a spatial frequency spectrum from the plural intensity distributions, and calculates the phase information from the obtained spatial frequency spectrum.
摘要翻译：提供了对样本进行成像的X射线成像装置。 X射线成像装置包括：X射线源; 构造成从X射线源衍射X射线的衍射光栅; X射线检测器，被配置为检测由衍射光栅衍射的X射线; 以及计算器，被配置为基于由所述X射线检测器检测到的X射线的强度分布来计算所述样本的相位信息，其中所述计算器从所述多个强度分布中获得空间频谱，并且计算所述相位信息从获得的空间频谱。

7. 发明申请

US20120281217A1 X-RAY IMAGING APPARATUS AND WAVEFRONT MEASURING APPARATUS 有权
标题翻译： X射线成像装置和WAVEFRONT测量装置
公开(公告)号：US20120281217A1
公开(公告)日：2012-11-08
申请号：US13511896
申请日：2011-01-21
申请人： Chidane Ouchi , Naoki Kohara
发明人： Chidane Ouchi , Naoki Kohara
IPC分类号： G01T1/36 , G01N21/59
CPC分类号： A61B6/484 , A61B6/027 , A61B6/06 , A61B6/4291 , G21K1/06 , G21K2207/005
摘要： There is provided an X-ray imaging apparatus which images a specimen. The X-ray imaging apparatus comprises: an X-ray source; a diffraction grating configured to diffract an X-ray from the X-ray source; an X-ray detector configured to detect the X-ray diffracted by the diffraction grating; and a calculator configured to calculate phase information of the specimen on the basis of an intensity distribution of the X-ray detected by the X-ray detector, wherein the calculator obtains a spatial frequency spectrum from the plural intensity distributions, and calculates the phase information from the obtained spatial frequency spectrum.
摘要翻译：提供了对样本进行成像的X射线成像装置。 X射线成像装置包括：X射线源; 构造成从X射线源衍射X射线的衍射光栅; X射线检测器，被配置为检测由衍射光栅衍射的X射线; 以及计算器，被配置为基于由所述X射线检测器检测到的X射线的强度分布来计算所述样本的相位信息，其中所述计算器从所述多个强度分布中获得空间频谱，并且计算所述相位信息从获得的空间频谱。

8. 发明申请

US20100271636A1 TALBOT INTERFEROMETER, ITS ADJUSTMENT METHOD, AND MEASUREMENT METHOD 有权
标题翻译： TALBOT干扰仪，其调整方法和测量方法
公开(公告)号：US20100271636A1
公开(公告)日：2010-10-28
申请号：US12765037
申请日：2010-04-22
申请人： Toshiyuki Naoi , Seima Kato , Naoki Kohara , Chidane Ouchi
发明人： Toshiyuki Naoi , Seima Kato , Naoki Kohara , Chidane Ouchi
IPC分类号： G01B9/02
CPC分类号： G01B9/02097 , G01B9/02024 , G01B2290/30
摘要： A Talbot interferometer includes a diffraction grating, an image pickup device, a moving unit configured to move at least one of the diffraction grating and the image pickup device in an optical axis direction of the test object, and a computer configured to adjust a position of the at least one of the diffraction grating and the image pickup device using the moving unit so that a Talbot condition can be met, based on a spatial frequency spectrum obtained from a plurality of interference fringes captured by the image pickup device while moving the at least one of the diffraction grating and the image pickup device using the moving unit.
摘要翻译： Talbot干涉仪包括衍射光栅，图像拾取装置，被配置为沿着测试对象的光轴方向移动衍射光栅和图像拾取装置中的至少一个的移动单元，以及计算机，被配置为调整所述至少一个所述衍射光栅和所述图像拾取装置使用所述移动单元，从而可以基于从所述图像拾取装置捕获的多个干涉条纹获得的空间频谱，同时至少移动所述至少一个衍射光栅中的一个和使用移动单元的图像拾取装置。

9. 发明授权

US07483467B2 Semiconductor laser unit and method for manufacturing optical reflection film 失效
标题翻译：半导体激光单元及其制造方法
公开(公告)号：US07483467B2
公开(公告)日：2009-01-27
申请号：US11518173
申请日：2006-09-11
申请人： Naoki Kohara , Hironari Takehara , Takaki Iwai , Hisatada Yasukawa
发明人： Naoki Kohara , Hironari Takehara , Takaki Iwai , Hisatada Yasukawa
IPC分类号： H01S5/00
CPC分类号： H01S5/40 , H01S5/026 , H01S5/4087
摘要： The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.
摘要翻译：半导体激光器单元包括具有不同激光束波长的多个半导体激光元件的激光发射部分和具有用于反射从激光发射部分发出的激光束的光反射膜的反射镜部分。反射镜部分被阻挡到从多个半导体激光元件中的每一个发射的每个激光束进入的多个区域中，并且同时对于选择性地进入该区域的激光束具有高反射率的反射膜是设置在多个区域的每一个区域中。

10. 发明申请

US20070071049A1 Semiconductor laser unit and method for manufacturing optical reflection film 失效
标题翻译：半导体激光单元及其制造方法
公开(公告)号：US20070071049A1
公开(公告)日：2007-03-29
申请号：US11518173
申请日：2006-09-11
申请人： Naoki Kohara , Hironari Takehara , Takai Iwai , Hisatada Yasukawa
发明人： Naoki Kohara , Hironari Takehara , Takai Iwai , Hisatada Yasukawa
IPC分类号： H01S5/00
CPC分类号： H01S5/40 , H01S5/026 , H01S5/4087
摘要： The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.
摘要翻译：半导体激光器单元包括具有不同激光束波长的多个半导体激光元件的激光发射部分和具有用于反射从激光发射部分发出的激光束的光反射膜的反射镜部分。反射镜部分被阻挡到从多个半导体激光元件中的每一个发射的每个激光束进入的多个区域中，并且同时对于选择性地进入该区域的激光束具有高反射率的反射膜是设置在多个区域的每一个区域中。

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