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1. 发明申请

US20070071049A1 Semiconductor laser unit and method for manufacturing optical reflection film 失效
标题翻译：半导体激光单元及其制造方法
公开(公告)号：US20070071049A1
公开(公告)日：2007-03-29
申请号：US11518173
申请日：2006-09-11
申请人： Naoki Kohara , Hironari Takehara , Takai Iwai , Hisatada Yasukawa
发明人： Naoki Kohara , Hironari Takehara , Takai Iwai , Hisatada Yasukawa
IPC分类号： H01S5/00
CPC分类号： H01S5/40 , H01S5/026 , H01S5/4087
摘要： The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.
摘要翻译：半导体激光器单元包括具有不同激光束波长的多个半导体激光元件的激光发射部分和具有用于反射从激光发射部分发出的激光束的光反射膜的反射镜部分。反射镜部分被阻挡到从多个半导体激光元件中的每一个发射的每个激光束进入的多个区域中，并且同时对于选择性地进入该区域的激光束具有高反射率的反射膜是设置在多个区域的每一个区域中。

2. 发明授权

US07483467B2 Semiconductor laser unit and method for manufacturing optical reflection film 失效
标题翻译：半导体激光单元及其制造方法
公开(公告)号：US07483467B2
公开(公告)日：2009-01-27
申请号：US11518173
申请日：2006-09-11
申请人： Naoki Kohara , Hironari Takehara , Takaki Iwai , Hisatada Yasukawa
发明人： Naoki Kohara , Hironari Takehara , Takaki Iwai , Hisatada Yasukawa
IPC分类号： H01S5/00
CPC分类号： H01S5/40 , H01S5/026 , H01S5/4087
摘要： The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.
摘要翻译：半导体激光器单元包括具有不同激光束波长的多个半导体激光元件的激光发射部分和具有用于反射从激光发射部分发出的激光束的光反射膜的反射镜部分。反射镜部分被阻挡到从多个半导体激光元件中的每一个发射的每个激光束进入的多个区域中，并且同时对于选择性地进入该区域的激光束具有高反射率的反射膜是设置在多个区域的每一个区域中。

3. 发明申请

US20090230498A1 OPTICAL SEMICONDUCTOR DEVICE 失效
标题翻译：光学半导体器件
公开(公告)号：US20090230498A1
公开(公告)日：2009-09-17
申请号：US12397765
申请日：2009-03-04
申请人： Takaki Iwai , Hironari Takehara , Hisatada Yasukawa
发明人： Takaki Iwai , Hironari Takehara , Hisatada Yasukawa
IPC分类号： H01L31/103
CPC分类号： H01L31/10 , H01L27/1443 , H01L27/14643 , H01L31/103
摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.
摘要翻译：光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

4. 发明授权

US08030728B2 Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US08030728B2
公开(公告)日：2011-10-04
申请号：US12397765
申请日：2009-03-04
申请人： Takaki Iwai , Hironari Takehara , Hisatada Yasukawa
发明人： Takaki Iwai , Hironari Takehara , Hisatada Yasukawa
IPC分类号： H01L31/00
CPC分类号： H01L31/10 , H01L27/1443 , H01L27/14643 , H01L31/103
摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.
摘要翻译：光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

5. 发明申请

US20090261441A1 OPTICAL SEMICONDUCTOR DEVICE 审中-公开
标题翻译：光学半导体器件
公开(公告)号：US20090261441A1
公开(公告)日：2009-10-22
申请号：US12400346
申请日：2009-03-09
申请人： Hisatada Yasukawa , Hironari Takehara , Takaki Iwai
发明人： Hisatada Yasukawa , Hironari Takehara , Takaki Iwai
IPC分类号： H01L31/02 , H01L31/112
CPC分类号： H01L31/103 , G11B7/13 , G11B2007/0006
摘要： An optical semiconductor device includes a light-receiving element on a semiconductor substrate of a first conductivity type, the light-receiving element including a light-receiving portion for converting incident light to an electrical current signal and performing a current amplification. The light-receiving portion includes: a semiconductor layer formed on the semiconductor substrate and having an impurity concentration substantially equal to or less than that of the semiconductor substrate; a first semiconductor region of a second conductivity type formed on the semiconductor layer and having an impurity concentration higher than that of the semiconductor layer; and a second semiconductor region of the first conductivity type selectively formed between the semiconductor substrate and the semiconductor layer and having an impurity concentration higher than those of the semiconductor substrate and the semiconductor layer.
摘要翻译：光学半导体器件包括在第一导电类型的半导体衬底上的光接收元件，该光接收元件包括用于将入射光转换成电流信号并执行电流放大的光接收部分。光接收部分包括：形成在半导体衬底上并具有基本上等于或小于半导体衬底的杂质浓度的杂质浓度的半导体层; 在所述半导体层上形成的杂质浓度高于所述半导体层的杂质浓度的第二导电类型的第一半导体区域; 以及第一导电类型的第二半导体区域，其选择性地形成在半导体衬底和半导体层之间，并且具有比半导体衬底和半导体层的杂质浓度更高的杂质浓度。

6. 发明申请

US20050189546A1 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US20050189546A1
公开(公告)日：2005-09-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/144 , H01L27/15 , H01L31/0288 , H01L31/103
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

7. 发明授权

US07768090B2 Semiconductor photodetector device 失效
标题翻译：半导体光电探测器
公开(公告)号：US07768090B2
公开(公告)日：2010-08-03
申请号：US11968357
申请日：2008-01-02
申请人： Hisatada Yasukawa
发明人： Hisatada Yasukawa
IPC分类号： H01L31/062
CPC分类号： H01L31/101 , H01L27/1443
摘要： A semiconductor photodetector device includes a light receiving operation section converting incident light to an electric signal and a current amplifying operation section amplifying the electric signal. The light receiving operation section includes: a first conductivity type semiconductor layer a formed on a first conductivity type semiconductor substrate; a second conductivity type first semiconductor region formed on the semiconductor layer; and a first conductivity type second semiconductor region formed on the semiconductor layer and separated from the first semiconductor region. The current amplifying operation section includes: the second semiconductor region; a second conductivity type third semiconductor region formed in the semiconductor substrate; a second conductivity type fourth semiconductor region formed on the third semiconductor region and separated from the second semiconductor region.
摘要翻译：半导体光检测器件包括将入射光转换成电信号的光接收操作部分和放大电信号的电流放大操作部分。光接收操作部分包括：形成在第一导电类型半导体衬底上的第一导电类型半导体层a; 形成在所述半导体层上的第二导电型第一半导体区域; 以及形成在半导体层上并与第一半导体区分离的第一导电型第二半导体区域。电流放大操作部分包括：第二半导体区域; 形成在半导体衬底中的第二导电类型的第三半导体区域; 形成在第三半导体区域上并与第二半导体区域分离的第二导电型第四半导体区域。

8. 发明申请

US20090032896A1 OPTICAL SEMICONDUCTOR DEVICE 失效
标题翻译：光学半导体器件
公开(公告)号：US20090032896A1
公开(公告)日：2009-02-05
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/11
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

9. 发明授权

US07888765B2 Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US07888765B2
公开(公告)日：2011-02-15
申请号：US12173429
申请日：2008-07-15
申请人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
发明人： Masaki Taniguchi , Hisatada Yasukawa , Takaki Iwai
IPC分类号： H01L31/102
CPC分类号： H01L31/1105 , G11B7/13
摘要： An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
摘要翻译：光学半导体器件包括用于接收入射光的光电晶体管。光电晶体管包括形成在半导体衬底上的第一导电类型的集电极层，形成在集电极层上的第二导电类型的基极层和形成在基极层上的第一导电类型的发射极层。发射极层的厚度等于或小于半导体衬底中的入射光的吸收长度。

10. 发明授权

US07211829B2 Semiconductor photodetector device 有权
标题翻译：半导体光电探测器
公开(公告)号：US07211829B2
公开(公告)日：2007-05-01
申请号：US11059500
申请日：2005-02-17
申请人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
发明人： Hisatada Yasukawa , Ryouichi Ito , Takaki Iwai , Masaki Taniguchi , Yasushi Jin
IPC分类号： H01L27/15 , H01L31/113
CPC分类号： H01L27/1443 , H01L31/0288 , H01L31/103 , Y02E10/50
摘要： A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
摘要翻译：一种半导体光检测器件包括：第一导电类型的第一半导体层; 以及形成在第一半导体层上并具有光接收区域的第二导电类型的第二半导体层。第一半导体层包括含有高浓度的第一导电类型的杂质的第一区域和形成在第一区域上并且含有浓度低于第一区域的浓度的第一导电类型杂质的第二区域。第二半导体层包括含有浓度高于第二区域的第二导电类型的杂质的第三区域和形成在第三区域上的第四区域，并且含有浓度高于第二区域的浓度的第二导电类型的杂质。的第三个地区。

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