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1. 发明授权

US4800565A Semiconductor laser device having high optical intensity and reliability 失效
标题翻译：具有高光强度和可靠性的半导体激光器件
公开(公告)号：US4800565A
公开(公告)日：1989-01-24
申请号：US94602
申请日：1987-09-09
申请人： Misuzu Yoshizawa , Kazuhisa Uomi , Toshihiro Kawano , Yuichi Ono , Takashi Kajimura
发明人： Misuzu Yoshizawa , Kazuhisa Uomi , Toshihiro Kawano , Yuichi Ono , Takashi Kajimura
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32 , H01S5/2231 , H01S5/32308 , H01S5/2004 , H01S5/3211
摘要： Disclosed is a semiconductor laser wherein an interface layer is provided on an upper cladding layer formed on an active layer, the interface layer having a smaller Al mole ratio than that of the upper cladding layer, thereby preventing oxidation of the semiconductor surface which is exposed to the atmosphere, and thus improving the crystallizability of a semiconductor layer which is to be formed subsequently. By setting the refractive index of this semiconductor layer so as to be smaller than that of the upper cladding layer, light can be confined in the active layer at increased efficiency.
摘要翻译：公开了一种半导体激光器，其中界面层设置在形成于有源层上的上包层上，该界面层具有比上包层更低的Al摩尔比，从而防止暴露于气氛，从而提高将要形成的半导体层的结晶性。通过将该半导体层的折射率设定为小于上包层的折射率，可以以更高的效率将光限制在有源层中。

2. 发明授权

US4780879A Semiconductor laser device having little astigmatism 失效
标题翻译：具有很少散光的半导体激光器件
公开(公告)号：US4780879A
公开(公告)日：1988-10-25
申请号：US16410
申请日：1987-02-19
申请人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
发明人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
IPC分类号： H01S5/00 , H01S3/00 , H01S5/026 , H01S5/10 , H01S3/19
CPC分类号： H01S5/1082 , H01S5/0267 , H01S5/1064
摘要： A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 .mu.m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size.
摘要翻译：一种半导体激光器件，其具有限定在一对端面之间的条状有源区域，所述端面中的至少一个在平行于有源区域的平面中具有弯曲的横截面，其曲率半径为10至300μm m，有源区域的条纹具有允许单横模和多纵模的宽度。从该激光器发射的激光束可以具有很少的散光和小的斑点尺寸。

3. 发明授权

US5136601A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5136601A
公开(公告)日：1992-08-04
申请号：US379672
申请日：1989-07-13
申请人： Takashi Kajimura , Naoki Chinone , Yuichi Ono , Shinichi Nakatsuka , Kazuhisa Uomi , Toshihiro Kawano , Tsukuru Ohtoshi , Yasutoshi Kashiwada
发明人： Takashi Kajimura , Naoki Chinone , Yuichi Ono , Shinichi Nakatsuka , Kazuhisa Uomi , Toshihiro Kawano , Tsukuru Ohtoshi , Yasutoshi Kashiwada
IPC分类号： H01S5/10 , H01S5/227
CPC分类号： H01S5/10 , H01S5/227 , H01S5/1064 , H01S5/2275
摘要： A semiconductor laser having a stripe-like lasing region, wherein the structure of the lasing region such as the mechanism of optical guiding of the lateral mode control structure is made different between the central portion in the lasing region and portions close to facets, in order to reduce optical feedback induced noise and astigmatism, and to facilitate the manufacture thereof.
摘要翻译：一种具有条状激光区域的半导体激光器，其中激光区域的结构（例如横向模式控制结构的光引导机构）在激光区域的中心部分和靠近刻面的部分之间按顺序以减少光学反馈引起的噪声和散光，并促进其制造。

4. 发明授权

US4961197A Semiconductor laser device 失效
公开(公告)号：US4961197A
公开(公告)日：1990-10-02
申请号：US339125
申请日：1989-04-14
申请人： Toshiaki Tanaka , Takashi Kajimura , Toshihiro Kawano , Yuichi Ono
发明人： Toshiaki Tanaka , Takashi Kajimura , Toshihiro Kawano , Yuichi Ono
IPC分类号： H01S5/065 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/34 , H01S5/0658 , H01S5/2219 , H01S5/3086 , H01S5/3432
摘要： A high-power low-noise semiconductor laser device required for light sources for an erasable optical disc is a self-sustained pulsating semiconductor laser device in which an MQW structure is used for an active layer, and thus a kink output power and a light output power by which the self-pulsation is enabled are increased to 10 mW or more and noise is reduced. Another semiconductor laser device of a self-pulsation type has impurities that are doped in the active layer to reduce the self-pulsating frequency to obtain a low-noise characteristic even if higher optical feedback occurs. 259

5. 发明授权

US4602371A High output semiconductor laser device utilizing a mesa-stripe optical confinement region 失效
标题翻译：利用台面条状光限制区域的高输出半导体激光器件
公开(公告)号：US4602371A
公开(公告)日：1986-07-22
申请号：US571578
申请日：1984-01-17
申请人： Toshihiro Kawano , Tsukuru Ohtoshi , Naoki Chinone , Takashi Kajimura , Michiharu Nakamura
发明人： Toshihiro Kawano , Tsukuru Ohtoshi , Naoki Chinone , Takashi Kajimura , Michiharu Nakamura
IPC分类号： H01S5/20 , H01S5/227 , H01S5/32 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2081 , H01S5/2275 , H01S5/3213
摘要： A semiconductor laser device is provided with an optical confinement region constituted by first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively. The first and fourth semiconductor layers are smaller in refractive index than the second and third semiconductor layers, and the third semiconductor layer is larger in refractive index than the second semiconductor layer. On the other hand, the second and fourth semiconductor layers are larger in forbidden bandwidth than the third semiconductor layer. At least the first and fourth semiconductor layers are opposite in conductivity type to each other. In addition to this, the optical confinement region is formed into a mesa-stripe, and both side walls of this mesa-stripe which are substantially parallel to the traveling direction of a laser beam are embedded with a fifth semiconductor layer. Also, the width of the second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within the optical confinement region is made larger than that of the third semiconductor layer. Accordingly, by virtue of this structure, a large output is ensured by this semiconductor laser device.
摘要翻译：半导体激光装置设置有由第一，第二，第三和第四半导体层构成的光限制区域，该第一，第二，第三和第四半导体层依次相互接触地设置在预定半导体衬底的上部。第一和第四半导体层的折射率小于第二和第三半导体层，并且第三半导体层的折射率比第二半导体层大。另一方面，第二和第四半导体层的禁带宽度大于第三半导体层。至少第一和第四半导体层的导电类型彼此相反。除此之外，光限制区域形成为台面条状，并且基本上平行于激光束的行进方向的该台面条的两个侧壁都嵌有第五半导体层。此外，第二半导体层在与激光束的行进方向垂直的部分的宽度以及与光限制区域内的结的平行方向的宽度大于第三半导体层的宽度。因此，通过这种结构，通过该半导体激光器件确保了大的输出。

6. 发明授权

US5157679A Optoelectronic devices 失效
标题翻译：光电器件
公开(公告)号：US5157679A
公开(公告)日：1992-10-20
申请号：US642006
申请日：1991-01-16
申请人： Masahiko Kondow , Toshihiro Kawano , Shigekazu Minagawa , Shin Satoh , Kenji Uchida , Toshiaki Tanaka , Takashi Kajimura
发明人： Masahiko Kondow , Toshihiro Kawano , Shigekazu Minagawa , Shin Satoh , Kenji Uchida , Toshiaki Tanaka , Takashi Kajimura
IPC分类号： H01L33/00 , H01L33/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323
CPC分类号： H01L33/16 , H01L33/0062 , H01S5/32325 , H01S5/2059 , H01S5/2231 , H01S5/305 , H01S5/3202
摘要： An optielectronic device comprising a substrate crystal whose crystal plane is a (n11) plane tilted from the (100) plane toward the [110] direction, or [110] direction where (n>1). When the substrate is applied to an AlGaInP semiconductor laser, the optical device can be cleaved into a rectangular shape, as in the case of a (100) substrate crystal, resulting in easy handling of the chips and also is effective for making the lasting wavelength shorter, lowering the threshold current density for lasing, improving the continuous lasing temperature, etc. Furthermore, semiconductor lasers of different lasing wavelengths can be prepared under good control. Furthermore, a doping efficiency having no dependence on a tilt angle can be obtained by proper selection of a dopant. For example, Si is suitable as an n-type dopant entering sites of group III atom on an (n11) A plane (n.gtoreq.2).
摘要翻译：一种光电装置，其包括晶体面，其晶面是从（100）面朝向[110]方向或（110）方向倾斜的（n11）面，其中（n> 1）。当将衬底施加到AlGaInP半导体激光器时，如在（100）衬底晶体的情况下，光学器件可以被切割成矩形形状，从而易于处理芯片，并且对于使持久波长有效更短，降低激光器的阈值电流密度，改善连续激光温度等。此外，可以在良好的控制下制备不同激光波长的半导体激光器。此外，通过适当选择掺杂剂可以获得不依赖于倾斜角的掺杂效率。例如，Si适合作为在（n11）A平面（n> = = 2）上进入III族原子的位置的n型掺杂剂。

7. 发明授权

US07890275B2 Planar elongational viscosity measuring method and planar elongational viscosity measuring apparatus 失效
标题翻译：平面伸长粘度测量方法和平面伸长粘度测量仪
公开(公告)号：US07890275B2
公开(公告)日：2011-02-15
申请号：US12161444
申请日：2006-12-27
申请人： Tsutomu Takahashi , Masataka Shirakashi , Toshihiro Kawano
发明人： Tsutomu Takahashi , Masataka Shirakashi , Toshihiro Kawano
IPC分类号： G01N11/00
CPC分类号： G01N11/10 , G01N11/14
摘要： A planar elongational viscosity measuring method and apparatus which can advance analysis of planar elongational viscosities for high-viscosity and low-viscosity fluids. As a bomb-shell like bob 2 is pushed into a container 6, a non-Newtonian fluid 9 reaches a planar elongation state in a side space G, counterforce F applied to the bomb-shell like bob 2 at this time is measured, planar elongation stress σ is calculated using the counterforce F and conditions input by a user based on push-up force, the counterforce F, and the horizontal cross-sectional area of the side space G, and the planar elongation stress is divided by a planar elongation speed ε′, thereby acquiring a planar elongational viscosity ηPE. Accordingly, it becomes possible to acquire planar elongational viscosities of not only a high-viscosity non-Newtonian fluid, but also a low-viscosity non-Newtonian fluid which is not likely to be solidified, resulting in an advancement of analysis of planar elongational viscosities for high-viscosity and low-viscosity fluids.
摘要翻译：可以推进高粘度和低粘度流体的平面伸长粘度分析的平面伸长粘度测量方法和装置。由于像鲍勃2的炸弹壳被推入容器6中，所以非牛顿流体9在侧面空间G中达到平面伸长状态，此时测量应用于弹壳2的反作用力F，平面伸长应力使用反力F和用户基于上推力，反作用力F和侧面空间G的水平横截面积输入的条件来计算，并且将平面延伸应力除以平面延伸速度＆egr; '，从而获得平面伸长粘度和PE。因此，可以获得不仅高粘度非牛顿流体的平面伸长粘度，而且获得不易凝固的低粘度非牛顿流体的平面伸长粘度，导致平面伸长粘度分析的进展用于高粘度和低粘度流体。

8. 外观设计

USD441330S1 Operating lever for working vehicle 失效
公开(公告)号：USD441330S1
公开(公告)日：2001-05-01
申请号：US29128975
申请日：2000-09-07
申请人： Koji Okazawa , Toshihiro Kawano , Sigeyuki Satou
设计人： Koji Okazawa , Toshihiro Kawano , Sigeyuki Satou

9. 发明申请

US20100274504A1 FLUID ANALYSIS METHOD AND FLUID ANALYSIS DEVICE 审中-公开
标题翻译：流体分析方法和流体分析装置
公开(公告)号：US20100274504A1
公开(公告)日：2010-10-28
申请号：US12161639
申请日：2006-12-27
申请人： Tsutomu Takahashi , Masataka Shirakashi , Toshihiro Kawano
发明人： Tsutomu Takahashi , Masataka Shirakashi , Toshihiro Kawano
IPC分类号： G01N11/10
CPC分类号： G01N11/10 , G01N2011/0026 , G01N2203/0676
摘要： There is provided a fluid analysis method and its device which are capable of easily analyzing a normal stress difference of a low-viscosity fluid in addition to that of a high-viscosity fluid. A shearing fluidity is applied to a non-Newtonian fluid within a lateral-side gap by pushing a cylindrical bob into a container. At that time, reactive force applied to the cylindrical bob is measured. Then, by practicing an arithmetic process in a given form using the reactive force and each of conditions input by a user, the normal stress difference of the low-viscosity non-Newtonian fluid which is hard to form in a solid state can be certainly determined. Thus, with respect to the low-viscosity non-Newtonian fluid in addition to the high-viscosity non-Newtonian fluid, the normal stress difference can be easily analyzed.
摘要翻译：提供了一种流体分析方法及其装置，其能够容易地分析除了高粘度流体之外的低粘度流体的正常应力差。通过将圆柱形鲍勃推入容器中，剪切流动性被施加到侧向间隙内的非牛顿流体。此时，测量施加到圆筒形凸起的反作用力。然后，通过使用反作用力和用户输入的条件以给定形式实施运算处理，可以肯定地确定难以在固态形成的低粘度非牛顿流体的法向应力差。因此，除了高粘度非牛顿流体之外，对于低粘度的非牛顿流体，可以容易地分析法向应力差。

10. 发明申请

US20100228504A1 PLANAR ELONGATIONAL VISCOSITY MEASURING METHOD AND PLANAR ELONGATIONAL VISCOSITY MEASURING APPARATUS 失效
标题翻译：平面伸缩粘度测量方法和平面伸缩粘度测量装置
公开(公告)号：US20100228504A1
公开(公告)日：2010-09-09
申请号：US12161444
申请日：2006-12-27
申请人： Tsutomu Takahashi , Masataka Shirakashi , Toshihiro Kawano
发明人： Tsutomu Takahashi , Masataka Shirakashi , Toshihiro Kawano
IPC分类号： G01N11/00
CPC分类号： G01N11/10 , G01N11/14
摘要： A planar elongational viscosity measuring method and apparatus which can advance analysis of planar elongational viscosities for high-viscosity and low-viscosity fluids. As a bomb-shell like bob 2 is pushed into a container 6, a non-Newtonian fluid 9 reaches a planar elongation state in a side space G, counterforce F applied to the bomb-shell like bob 2 at this time is measured, planar elongation stress τ is calculated using the counterforce F and conditions input by a user based on push-up force, the counterforce F, and the horizontal cross-sectional area of the side space G, and the planar elongation stress is divided by a planar elongation speed ε′, thereby acquiring a planar elongational viscosity ηPE. Accordingly, it becomes possible to acquire planar elongational viscosities of not only a high-viscosity non-Newtonian fluid, but also a low-viscosity non-Newtonian fluid which is not likely to be solidified, resulting in an advancement of analysis of planar elongational viscosities for high-viscosity and low-viscosity fluids.
摘要翻译：可以推进高粘度和低粘度流体的平面伸长粘度分析的平面伸长粘度测量方法和装置。由于像鲍勃2的炸弹壳被推入容器6中，所以非牛顿流体9在侧面空间G中达到平面伸长状态，此时测量应用于弹壳2的反作用力F，平面使用反作用力F和用户根据上推力，反力F和侧面空间G的水平横截面面积输入的条件计算伸长应力τ，并将平面伸长应力除以平面伸长率速度“，从而获得平面伸长粘度和PE。因此，可以获得不仅高粘度非牛顿流体的平面伸长粘度，而且获得不易凝固的低粘度非牛顿流体的平面伸长粘度，导致平面伸长粘度分析的进展用于高粘度和低粘度流体。

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