专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5893967A Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device 失效
标题翻译：在电子发射器件中阻抗辅助电化学去除材料，特别是过量的发射极材料
公开(公告)号：US5893967A
公开(公告)日：1999-04-13
申请号：US884700
申请日：1997-06-30
申请人： N. Johan Knall , Christopher J. Spindt , Gabriela S. Chakarova , Duane A. Haven , John M. Macaulay , Roger W. Barton , Maria S. Nikolova , Peter C. Searson
发明人： N. Johan Knall , Christopher J. Spindt , Gabriela S. Chakarova , Duane A. Haven , John M. Macaulay , Roger W. Barton , Maria S. Nikolova , Peter C. Searson
IPC分类号： B81C1/00 , C25F3/14 , H01J9/02 , C25F3/00
CPC分类号： H01J9/025
摘要： An impedance-assisted electrochemical method is employed for selectively removing certain material from a structure without significantly electrochemically removing certain other material of the same chemical type as the removed material.
摘要翻译：采用阻抗辅助电化学方法从结构中选择性地去除某些材料，而不用显着地电化学去除与去除的材料相同的化学类型的某些其它材料。

2. 发明授权

US5766446A Electrochemical removal of material, particularly excess emitter material in electron-emitting device 失效
标题翻译：在电子发射器件中电化学去除材料，特别是过量的发射极材料
公开(公告)号：US5766446A
公开(公告)日：1998-06-16
申请号：US610729
申请日：1996-03-05
申请人： Christopher J. Spindt , Gabriela S. Chakarova , Maria S. Nikolova , Peter C. Searson , Duane A. Haven , Nils Johan Knall , John M. Macaulay , Roger W. Barton
发明人： Christopher J. Spindt , Gabriela S. Chakarova , Maria S. Nikolova , Peter C. Searson , Duane A. Haven , Nils Johan Knall , John M. Macaulay , Roger W. Barton
IPC分类号： B81C1/00 , C25F3/14 , H01J9/02 , C25F3/00
CPC分类号： H01J9/025
摘要： An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.
摘要翻译：使用电化学技术从部分完成的结构中去除某些材料，而不会明显地化学侵蚀与除去的材料相同的化学类型的某些其它材料。部分完成的结构包含至少部分由第一材料构成的第一非绝缘层（52C），通常是在发射体材料沉积期间积聚以形成电子发射体中的电子发射元件（52A）的过量发射极材料，覆盖电绝缘层（44）。至少部分由第一材料构成的电绝缘构件，例如电子发射元件至少部分地位于延伸穿过绝缘层的开口（50）中。在部分完成的结构被布置的情况下，第一非绝缘层的第一材料的至少一部分被电化学去除，使得非绝缘构件暴露而不显着地侵害非绝缘构件的第一材料。

3. 发明授权

US6027632A Multi-step removal of excess emitter material in fabricating electron-emitting device 失效
标题翻译：在制造电子发射器件时多步去除过量的发射极材料
公开(公告)号：US6027632A
公开(公告)日：2000-02-22
申请号：US904967
申请日：1997-07-30
申请人： N. Johan Knall , Duane A. Haven , Roger W. Barton , William H. Creel , Christopher J. Spindt
发明人： N. Johan Knall , Duane A. Haven , Roger W. Barton , William H. Creel , Christopher J. Spindt
IPC分类号： B81C1/00 , C25F3/14 , H01J9/02 , C25F3/02
CPC分类号： H01J9/025
摘要： Excess emitter material (52B) is removed in multiple steps during the fabrication of an electron-emitting device. A structure is initially provided in which a dielectric layer (44) overlies a non-insulating region (42), control electrodes (80 or 46/80) overlie the dielectric layer, openings (48/50) extend through the control electrodes and dielectric layer, electron-emissive elements (52A) formed with emitter material are situated in the openings, and an excess layer (52B) of the emitter material overlies the control electrodes and the dielectric layer. Portions of the excess emitter material overlying the dielectric layer in the spaces between the control electrodes are initially removed, preferably with etchant that directly attacks the emitter material. Portions (52C) of the excess emitter material overlying the control electrodes above the electron-emissive elements are subsequently removed to expose the electron-emissive elements.
摘要翻译：在制造电子发射器件期间，多个发射极材料（52B）被多个步骤去除。首先提供一种结构，其中介电层（44）覆盖在非绝缘区域（42）上，控制电极（80或46/80）覆盖在电介质层上，开口（48/50）延伸穿过控制电极和电介质由发射体材料形成的层，电子发射元件（52A）位于开口中，发射极材料的过剩层（52B）覆盖在控制电极和电介质层上。最初除去在控制电极之间的空间中覆盖电介质层的多余发射体材料的部分，最好用直接攻击发射极材料的蚀刻剂。随后去除覆盖电子发射元件上方的控制电极的过量发射体材料的部分（52℃）以露出电子发射元件。

4. 发明授权

US5920151A Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor 失效
标题翻译：具有聚焦涂层的电子发射器件的结构和制造通过下面的访问导体接触
公开(公告)号：US5920151A
公开(公告)日：1999-07-06
申请号：US866151
申请日：1997-05-30
申请人： Roger W. Barton , Stephanie J. Oberg , N. Johan Knall , Christopher J. Spindt , Duane A. Haven
发明人： Roger W. Barton , Stephanie J. Oberg , N. Johan Knall , Christopher J. Spindt , Duane A. Haven
IPC分类号： H01J3/02 , H01J19/38
CPC分类号： H01J3/022
摘要： An electron-emitting device contains an electron focusing system (37 or 37A) formed with a base focusing structure (38 or 38A), a focus coating (39 or 39A), and an access conductor (106 or 116). The focus coating overlies the base focusing structure and extends into a focus opening (40). The access conductor is electrically coupled to the lower surface of the focus coating. A potential for controlling the focusing of electrons that travel through the focus opening is provided to the focus coating via the access conductor. The focus coating is typically formed by an angled deposition technique.
摘要翻译：电子发射器件包含形成有基底聚焦结构（38或38A），聚焦涂层（39或39A）和接触导体（106或116）的电子聚焦系统（37或37A）。聚焦涂层覆盖基部聚焦结构并延伸到聚焦开口（40）中。接入导体电耦合到聚焦涂层的下表面。通过接入导体将聚焦涂层的焦距设置在聚焦涂层上。聚焦涂层通常由成角度的沉积技术形成。

5. 发明授权

US6019658A Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings, typically in combination with spacer material to control spacing between gate layer and electron-emissive elements 有权
标题翻译：使用分布式颗粒来限定栅极开口的门控电子发射器件的制造，通常与间隔物材料组合以控制栅极层和电子发射元件之间的间隔
公开(公告)号：US6019658A
公开(公告)日：2000-02-01
申请号：US151924
申请日：1998-09-11
申请人： Paul N. Ludwig , Duane A. Haven , John M. Macaulay , Christopher J. Spindt , James M. Cleeves , N. Johan Knall
发明人： Paul N. Ludwig , Duane A. Haven , John M. Macaulay , Christopher J. Spindt , James M. Cleeves , N. Johan Knall
IPC分类号： H01J9/02
CPC分类号： H01J9/025 , H01J2329/00
摘要： A gated electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. Spacer material is provided along the edges of the gate openings to form spacers (102A, 110A, 124A, 140, or 150B). Dielectric openings (80, 114, 128, 144, or 154) are formed through the insulating layer. The dielectric openings can be created before or after creating the spacers. In either case, emitter material in introduced into either the full dielectric openings, or into the portions of the dielectric openings not covered with spacer material, to form electron-emissive elements (106B, 116B, 130A, 146A, or 156B) typically filamentary in shape.
摘要翻译：具有较低非绝缘发射极区域（42），上覆绝缘层（44）和栅极层（48A，60A，60B，120A或180A / 184）的门控电子发射器通过以下工艺制造，其中颗粒（46）分布在绝缘层上，栅极层，设置在栅极层上的主层（50A，62A或72），设置在主层上的另一层（74）或图案转移层（182）。这些颗粒用于通过栅极层限定栅极开口（54,66,80,122或186/188）。间隔材料沿栅极开口的边缘设置以形成间隔物（102A，110A，124A，140或150B）。通过绝缘层形成电介质开口（80,114,128,144或154）。可以在产生间隔物之前或之后产生电介质开口。在任一种情况下，发射体材料被引入到完整电介质开口中，或者被引入未被间隔物材料覆盖的电介质开口部分，以形成电子发射元件（106B，116B，130A，146A或156B），通常为形状。

6. 发明授权

US5865659A Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements 失效
标题翻译：使用分布式颗粒来限定栅极开口并利用间隔物材料来控制栅极层和电子发射元件之间的间隔的门控电子发射器件的制造
公开(公告)号：US5865659A
公开(公告)日：1999-02-02
申请号：US660538
申请日：1996-06-07
申请人： Paul N. Ludwig , Duane A. Haven , John M. Macaulay , Christopher J. Spindt , James M. Cleeves , N. Johan Knall
发明人： Paul N. Ludwig , Duane A. Haven , John M. Macaulay , Christopher J. Spindt , James M. Cleeves , N. Johan Knall
IPC分类号： H01J9/02 , H01J1/30
CPC分类号： H01J9/025 , H01J2329/00
摘要： A gated electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. Spacer material is provided along the edges of the gate openings to form spacers (110A, 124A, 140, or 150B) but leave corresponding apertures (112A, 126A, 142, or 152) through the spacer material. The insulating layer is etched through the apertures to form dielectric openings (114, 128, 144, or 154) through the insulating layer. Emitter material is introduced into the dielectric openings to form electron-emissive elements (116B, 130A, 146A, or 156B) typically filamentary in shape.
摘要翻译：具有较低非绝缘发射极区域（42），上覆绝缘层（44）和栅极层（48A，60A，60B，120A或180A / 184）的门控电子发射器通过以下工艺制造，其中颗粒（46）分布在绝缘层上，栅极层，设置在栅极层上的主层（50A，62A或72），设置在主层上的另一层（74）或图案转移层（182）。这些颗粒用于通过栅极层限定栅极开口（54,66,80,122或186/188）。隔板材料沿栅极开口的边缘设置以形成间隔物（110A，124A，140或150B），但通过间隔物料留下相应的孔（112A，126A，142或152）。通过孔蚀刻绝缘层，以形成通过绝缘层的电介质开口（114,128,144或154）。将发射体材料引入电介质开口以形成通常为丝状形状的电子发射元件（116B，130A，146A或156B）。

7. 发明授权

US5863233A Field emitter fabrication using open circuit electrochemical lift off 失效
标题翻译：使用开路电化学剥离的场发射体制造
公开(公告)号：US5863233A
公开(公告)日：1999-01-26
申请号：US848338
申请日：1997-04-30
申请人： John D. Porter , Gabriela S. Chakarova , N. Johan Knall , Christopher J. Spindt
发明人： John D. Porter , Gabriela S. Chakarova , N. Johan Knall , Christopher J. Spindt
IPC分类号： C25F3/02 , B81C1/00 , C25F3/14 , H01J9/02
CPC分类号： H01J9/025
摘要： A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity. The present invention also applies a second potential to the second electrically conductive layer, such that the second potential is imparted to the closure layer of electron emissive material. In the present embodiment, the second potential comprises an open circuit potential. The present invention then exposes the field emitter structure to an electrochemical etchant wherein the electrochemical etchant etches electron emissive material which is biased at the open circuit potential. In so doing, the layer of electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element formed within the cavity.
摘要翻译：一种形成场致发射结构的方法。在一个实施例中，本发明产生了一种结构，其具有形成为覆盖在第一导电层上的绝缘层的空腔。本发明还产生了在绝缘层中形成在空腔上方的开口的第二导电层。本实施例将电子发射材料层直接沉积到第二导电层上，而不首先沉积下面的剥离层，使得电子发射材料覆盖第二导电层中的开口并在腔内形成电子发射元件。本发明将第一电位施加到第一导电层，使得第一电位被赋予形成在空腔内的电子发射元件。本发明还将第二电位施加到第二导电层，使得第二电位被赋予电子发射材料的封闭层。在本实施例中，第二电位包括开路电位。然后，本发明将场发射器结构暴露于电化学蚀刻剂，其中电化学蚀刻剂蚀刻以开路电位偏置的电子发射材料。在这样做时，电子发射材料层从第二导电层上方去除，而不蚀刻在腔内形成的电子发射元件。

8. 发明授权

US6013974A Electron-emitting device having focus coating that extends partway into focus openings 失效
标题翻译：具有聚焦涂层的电子发射器件，其一部分延伸到聚焦开口中
公开(公告)号：US6013974A
公开(公告)日：2000-01-11
申请号：US866554
申请日：1997-05-30
申请人： Duane A. Haven , Christopher J. Spindt , N. Johan Knall
发明人： Duane A. Haven , Christopher J. Spindt , N. Johan Knall
IPC分类号： H01J3/02 , H01J1/30 , H01J19/24
CPC分类号： H01J3/022
摘要： An electron-emitting device contains an electron focusing system (37 or 37A) formed with a base focusing structure (38 or 38A) and a focus coating (39 or 39A) that penetrates partway into a focus opening (40) extending through the base focusing structure above an electron-emissive element (24). The focus coating is normally of lower resistivity than the base focusing structure and thereby provides most of the focus control over electrons emitted by the electron-emissive element. The focus coating is typically formed by an angled deposition technique.
摘要翻译：电子发射器件包含形成有基底聚焦结构（38或38A）和聚焦涂层（39或39A）的电子聚焦系统（37或37A），所述聚焦涂层（39或39A）穿透基部聚焦的聚焦开口（40）结构在电子发射元件（24）之上。聚焦涂层通常具有比基底聚焦结构更低的电阻率，从而提供对由电子发射元件发射的电子的大部分焦点控制。聚焦涂层通常由成角度的沉积技术形成。

9. 发明授权

US5851669A Field-emission device that utilizes filamentary electron-emissive elements and typically has self-aligned gate 失效
标题翻译：场致发射器件采用丝状电子发射元件，通常具有自对准栅极
公开(公告)号：US5851669A
公开(公告)日：1998-12-22
申请号：US446392
申请日：1995-05-22
申请人： John M. Macaulay , Peter C. Searson , Robert M. Duboc, Jr. , Christopher J. Spindt
发明人： John M. Macaulay , Peter C. Searson , Robert M. Duboc, Jr. , Christopher J. Spindt
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , D02C3/00
CPC分类号： B82Y10/00 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J2201/30403 , H01J2201/30457 , H01J2201/319 , Y10T428/2973 , Y10T428/298
摘要： A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer that overlies a lower conductive region situated over insulating material of a supporting substrate. Electron-emissive filaments occupy pores extending through the porous layer. A conductive gate layer through which openings extend at locations centered on the filaments typically overlies the porous layer. Cavities are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.
摘要翻译：适用于大面积平板电视的场致发射结构围绕位于位于支撑衬底的绝缘材料上的下导电区域的绝缘多孔层的周围。电子发射细丝占据贯穿多孔层的孔。导电栅极层，通过该导电栅极层在多孔层上覆盖位于中心的位置处的开口延伸。通常在多孔层中沿其上表面设置同样以细丝为中心的位置。

10. 发明授权

US06338662B1 Fabrication of electron-emitting device having large control openings centered on focus openings 失效
标题翻译：具有以焦点开口为中心的大的控制开口的电子发射器件的制造
公开(公告)号：US06338662B1
公开(公告)日：2002-01-15
申请号：US09626599
申请日：2000-07-27
申请人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
发明人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
IPC分类号： H01J900
CPC分类号： H01J9/025 , H01J3/022 , H01J2329/00
摘要： Fabrication of an electron-emitting device entails providing an electron-emitting structure in which multiple sets of electron-emissive elements (24) overlying an emitter electrode (12) are arranged in a line extending generally in a specified direction. Each of a group of control electrodes (28) in the electron-emitting structure contain (a) a main control portion (30) penetrated by a control opening (34) that laterally circumscribes one of the sets of electron-emissive elements and (b) a gate portion (32) that extends across the control opening and has gate openings (36) through which the electron-emissive elements are exposed. Actinic material (38P) is provided over the control electrodes and processed to form a base focusing structure (38) penetrated by multiple focus openings (40) such that each focus opening is centered on a corresponding one of the control openings in the specified direction.
摘要翻译：电子发射器件的制造需要提供一种电子发射结构，其中覆盖发射极（12）的多组电子发射元件（24）以一般沿指定方向延伸的直线布置。电子发射结构中的一组控制电极（28）中的每一个包含（a）横向地限制一组电子发射元件的控制开口（34）穿透的主控制部分（30）和（b ）栅极部分（32），其延伸穿过所述控制开口并具有栅极开口（36），所述电子发射元件通过所述栅极开口暴露。将光化材料（38P）设置在控制电极上并被处理以形成由多个聚焦开口（40）穿透的基部聚焦结构（38），使得每个聚焦开口以指定方向上的对应的一个控制开口为中心。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式