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1. 发明授权

US06338662B1 Fabrication of electron-emitting device having large control openings centered on focus openings 失效
标题翻译：具有以焦点开口为中心的大的控制开口的电子发射器件的制造
公开(公告)号：US06338662B1
公开(公告)日：2002-01-15
申请号：US09626599
申请日：2000-07-27
申请人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
发明人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
IPC分类号： H01J900
CPC分类号： H01J9/025 , H01J3/022 , H01J2329/00
摘要： Fabrication of an electron-emitting device entails providing an electron-emitting structure in which multiple sets of electron-emissive elements (24) overlying an emitter electrode (12) are arranged in a line extending generally in a specified direction. Each of a group of control electrodes (28) in the electron-emitting structure contain (a) a main control portion (30) penetrated by a control opening (34) that laterally circumscribes one of the sets of electron-emissive elements and (b) a gate portion (32) that extends across the control opening and has gate openings (36) through which the electron-emissive elements are exposed. Actinic material (38P) is provided over the control electrodes and processed to form a base focusing structure (38) penetrated by multiple focus openings (40) such that each focus opening is centered on a corresponding one of the control openings in the specified direction.
摘要翻译：电子发射器件的制造需要提供一种电子发射结构，其中覆盖发射极（12）的多组电子发射元件（24）以一般沿指定方向延伸的直线布置。电子发射结构中的一组控制电极（28）中的每一个包含（a）横向地限制一组电子发射元件的控制开口（34）穿透的主控制部分（30）和（b ）栅极部分（32），其延伸穿过所述控制开口并具有栅极开口（36），所述电子发射元件通过所述栅极开口暴露。将光化材料（38P）设置在控制电极上并被处理以形成由多个聚焦开口（40）穿透的基部聚焦结构（38），使得每个聚焦开口以指定方向上的对应的一个控制开口为中心。

2. 发明授权

US06201343B1 Electron-emitting device having large control openings in specified, typically centered, relationship to focus openings 失效
标题翻译：电子发射器件具有大的控制开口，具有特定的，通常与聚焦开口对中的关系
公开(公告)号：US06201343B1
公开(公告)日：2001-03-13
申请号：US08919634
申请日：1997-08-28
申请人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
发明人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
IPC分类号： H01J102
CPC分类号： H01J9/025 , H01J3/022 , H01J2329/00
摘要： An electron-emitting device contains an emitter electrode (12), a group of sets of electron-emitting elements (24), a group of control electrodes (28), and a focusing system (37) for focusing electrons emitted by the electron-emissive elements. The sets of electron-emissive elements are arranged generally in a line extending in a specified direction. Each control electrode has a main portion (30) and a gate portion (32). the electron-emissive elements are exposed through gate openings (36) in the gate portion. The main portion of each control electrode crosses over the emitter electrode and has a large control opening (34) which laterally circumscribes one of the sets of electron-emissive elements. The focusing system has a group of focus openings (40) located respectively above the control openings. Each control opening is largely centered on, or/and is no more than 50% as large as, the corresponding focus opening in the specified direction.
摘要翻译：电子发射器件包含发射电极（12），一组电子发射元件（24），一组控制电极（28）和用于聚焦电子发射元件发射的电子的聚焦系统（37）发光元件。电子发射元件组通常以沿指定方向延伸的直线布置。每个控制电极具有主要部分（30）和栅极部分（32）。电子发射元件通过栅极部分中的栅极开口（36）暴露。每个控制电极的主要部分与发射电极交叉，并且具有横向地限制一组电子发射元件的大的控制开口（34）。聚焦系统具有分别位于控制开口上方的一组聚焦开口（40）。每个控制开口主要集中在与指定方向相对应的焦点开口的或/或不大于其相应聚焦开口的50％。

3. 发明授权

US6146226A Fabrication of electron-emitting device having ladder-like emitter electrode 有权
标题翻译：具有梯状发射电极的电子发射器件的制造
公开(公告)号：US6146226A
公开(公告)日：2000-11-14
申请号：US322244
申请日：1999-05-28
申请人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
发明人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
IPC分类号： H01J3/18 , H01J1/304 , H01J3/02 , H01J9/02 , H01J9/50
CPC分类号： H01J9/025 , H01J3/022 , H01J2329/00
摘要： An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.
摘要翻译：电子发射器件利用形状像梯子的发射电极（12），其中发射极开口线（18）延伸穿过电极。在制造该器件时，发射器开口可用于将诸如聚焦系统（37）的边缘（38C）等某些边缘自对准到诸如控制电极（28）的边缘（28C）的其它边缘，获得所需的横向间距。通常借助于背面光刻曝光操作来实现自对准。发射电极的梯形也有助于消除涉及电极的短路缺陷。

4. 发明授权

US6002199A Structure and fabrication of electron-emitting device having ladder-like emitter electrode 失效
标题翻译：具有梯状发射电极的电子发射器件的结构和制造
公开(公告)号：US6002199A
公开(公告)日：1999-12-14
申请号：US866150
申请日：1997-05-30
申请人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
发明人： Christopher J. Spindt , Stephanie J. Oberg , Duane A. Haven , Roger W. Barton , Arthur J. Learn , Victoria A. Bascom
IPC分类号： H01J3/18 , H01J1/304 , H01J3/02 , H01J9/02 , H01J9/50 , H01J1/30 , H01J19/24
CPC分类号： H01J9/025 , H01J3/022 , H01J2329/00
摘要： An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.
摘要翻译：电子发射器件利用形状像梯子的发射电极（12），其中发射极开口线（18）延伸穿过电极。在制造该器件时，发射器开口可用于将诸如聚焦系统（37）的边缘（38C）等某些边缘自对准到诸如控制电极（28）的边缘（28C）的其它边缘，获得所需的横向间距。通常借助于背面光刻曝光操作来实现自对准。发射电极的梯形也有助于消除涉及电极的短路缺陷。

5. 发明授权

US06448708B1 Dual-layer metal for flat panel display 失效
标题翻译：双层金属用于平板显示
公开(公告)号：US06448708B1
公开(公告)日：2002-09-10
申请号：US09588118
申请日：2000-05-31
申请人： Kishore K. Chakravorty , Swayambu Ramani , Stephanie J. Oberg , Johan Knall , Duane A. Haven , Ronald S. Besser , Paul J. Louris , Arthur J. Learn , Christopher J. Spindt , Roger W. Barton
发明人： Kishore K. Chakravorty , Swayambu Ramani , Stephanie J. Oberg , Johan Knall , Duane A. Haven , Ronald S. Besser , Paul J. Louris , Arthur J. Learn , Christopher J. Spindt , Roger W. Barton
IPC分类号： H01J102
CPC分类号： H01J9/025 , H01J1/30 , H01J9/148 , H01J2201/30403 , H01J2329/00
摘要： A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a emitter electrode metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form emitter electrode metal gives emitter electrode metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer. Electrode structures that use resistor material, chromium-containing material, nickel and vanadium alloy, and gold are also disclosed.
摘要翻译：平板显示器和平板显示器的形成方法。在一个实施例中，平板显示器包括形成在背板上的有效区域内的阴极结构。阴极结构包括由覆盖材料层覆盖的铝条构成的发射极电极金属。使用铝和包层材料形成发射极电极金属，由于铝的高导电性而导致高导电性的发射极电极金属片段。通过使用合适的覆层材料和加工步骤，形成铝和包层材料之间的结合，其具有良好的导电性。在一个实施例中，钽用作包层材料。钽与具有良好导电性的上覆电阻层形成键。因此，所得结构通过铝层具有非常高的导电性，并且在电阻层中具有高导电性。还公开了使用电阻材料，含铬材料，镍和钒合金以及金的电极结构。

6. 发明授权

US5920151A Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor 失效
标题翻译：具有聚焦涂层的电子发射器件的结构和制造通过下面的访问导体接触
公开(公告)号：US5920151A
公开(公告)日：1999-07-06
申请号：US866151
申请日：1997-05-30
申请人： Roger W. Barton , Stephanie J. Oberg , N. Johan Knall , Christopher J. Spindt , Duane A. Haven
发明人： Roger W. Barton , Stephanie J. Oberg , N. Johan Knall , Christopher J. Spindt , Duane A. Haven
IPC分类号： H01J3/02 , H01J19/38
CPC分类号： H01J3/022
摘要： An electron-emitting device contains an electron focusing system (37 or 37A) formed with a base focusing structure (38 or 38A), a focus coating (39 or 39A), and an access conductor (106 or 116). The focus coating overlies the base focusing structure and extends into a focus opening (40). The access conductor is electrically coupled to the lower surface of the focus coating. A potential for controlling the focusing of electrons that travel through the focus opening is provided to the focus coating via the access conductor. The focus coating is typically formed by an angled deposition technique.
摘要翻译：电子发射器件包含形成有基底聚焦结构（38或38A），聚焦涂层（39或39A）和接触导体（106或116）的电子聚焦系统（37或37A）。聚焦涂层覆盖基部聚焦结构并延伸到聚焦开口（40）中。接入导体电耦合到聚焦涂层的下表面。通过接入导体将聚焦涂层的焦距设置在聚焦涂层上。聚焦涂层通常由成角度的沉积技术形成。

7. 发明授权

US6144144A Patterned resistor suitable for electron-emitting device 失效
标题翻译：图形电阻适用于电子发射器件
公开(公告)号：US6144144A
公开(公告)日：2000-11-07
申请号：US962230
申请日：1997-10-31
申请人： James M. Cleeves , Christopher J. Spindt , Roger W. Barton , Kishore K. Chakravorty , Arthur J. Learn , Stephanie J. Oberg
发明人： James M. Cleeves , Christopher J. Spindt , Roger W. Barton , Kishore K. Chakravorty , Arthur J. Learn , Stephanie J. Oberg
IPC分类号： H01J9/02 , H01J1/304 , H01J3/02 , H01J29/04 , H01J29/46 , H01J31/12 , H01J1/30
CPC分类号： H01J3/021 , H01J1/3042 , H01J29/467 , H01J2201/319 , H01J2329/00
摘要： An electron-emitting device contains a vertical emitter resistor patterned into multiple laterally separated sections (34, 34V, 46, or 46V) situated between the electron-emissive elements (40), on one hand, and emitter electrodes (32), on the other hand. Sections of the resistor are spaced apart along each emitter electrode.
摘要翻译：电子发射器件包含一个垂直发射电阻器，其被图案化成位于电子发射元件（40）和发射极（32）之间的多个横向分开的部分（34,34V，46或46V）上，另一方面。电阻器的部分沿着每个发射极间隔开。

8. 发明授权

US6027632A Multi-step removal of excess emitter material in fabricating electron-emitting device 失效
标题翻译：在制造电子发射器件时多步去除过量的发射极材料
公开(公告)号：US6027632A
公开(公告)日：2000-02-22
申请号：US904967
申请日：1997-07-30
申请人： N. Johan Knall , Duane A. Haven , Roger W. Barton , William H. Creel , Christopher J. Spindt
发明人： N. Johan Knall , Duane A. Haven , Roger W. Barton , William H. Creel , Christopher J. Spindt
IPC分类号： B81C1/00 , C25F3/14 , H01J9/02 , C25F3/02
CPC分类号： H01J9/025
摘要： Excess emitter material (52B) is removed in multiple steps during the fabrication of an electron-emitting device. A structure is initially provided in which a dielectric layer (44) overlies a non-insulating region (42), control electrodes (80 or 46/80) overlie the dielectric layer, openings (48/50) extend through the control electrodes and dielectric layer, electron-emissive elements (52A) formed with emitter material are situated in the openings, and an excess layer (52B) of the emitter material overlies the control electrodes and the dielectric layer. Portions of the excess emitter material overlying the dielectric layer in the spaces between the control electrodes are initially removed, preferably with etchant that directly attacks the emitter material. Portions (52C) of the excess emitter material overlying the control electrodes above the electron-emissive elements are subsequently removed to expose the electron-emissive elements.
摘要翻译：在制造电子发射器件期间，多个发射极材料（52B）被多个步骤去除。首先提供一种结构，其中介电层（44）覆盖在非绝缘区域（42）上，控制电极（80或46/80）覆盖在电介质层上，开口（48/50）延伸穿过控制电极和电介质由发射体材料形成的层，电子发射元件（52A）位于开口中，发射极材料的过剩层（52B）覆盖在控制电极和电介质层上。最初除去在控制电极之间的空间中覆盖电介质层的多余发射体材料的部分，最好用直接攻击发射极材料的蚀刻剂。随后去除覆盖电子发射元件上方的控制电极的过量发射体材料的部分（52℃）以露出电子发射元件。

9. 发明授权

US5766446A Electrochemical removal of material, particularly excess emitter material in electron-emitting device 失效
标题翻译：在电子发射器件中电化学去除材料，特别是过量的发射极材料
公开(公告)号：US5766446A
公开(公告)日：1998-06-16
申请号：US610729
申请日：1996-03-05
申请人： Christopher J. Spindt , Gabriela S. Chakarova , Maria S. Nikolova , Peter C. Searson , Duane A. Haven , Nils Johan Knall , John M. Macaulay , Roger W. Barton
发明人： Christopher J. Spindt , Gabriela S. Chakarova , Maria S. Nikolova , Peter C. Searson , Duane A. Haven , Nils Johan Knall , John M. Macaulay , Roger W. Barton
IPC分类号： B81C1/00 , C25F3/14 , H01J9/02 , C25F3/00
CPC分类号： H01J9/025
摘要： An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.
摘要翻译：使用电化学技术从部分完成的结构中去除某些材料，而不会明显地化学侵蚀与除去的材料相同的化学类型的某些其它材料。部分完成的结构包含至少部分由第一材料构成的第一非绝缘层（52C），通常是在发射体材料沉积期间积聚以形成电子发射体中的电子发射元件（52A）的过量发射极材料，覆盖电绝缘层（44）。至少部分由第一材料构成的电绝缘构件，例如电子发射元件至少部分地位于延伸穿过绝缘层的开口（50）中。在部分完成的结构被布置的情况下，第一非绝缘层的第一材料的至少一部分被电化学去除，使得非绝缘构件暴露而不显着地侵害非绝缘构件的第一材料。

10. 发明授权

US5893967A Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device 失效
标题翻译：在电子发射器件中阻抗辅助电化学去除材料，特别是过量的发射极材料
公开(公告)号：US5893967A
公开(公告)日：1999-04-13
申请号：US884700
申请日：1997-06-30
申请人： N. Johan Knall , Christopher J. Spindt , Gabriela S. Chakarova , Duane A. Haven , John M. Macaulay , Roger W. Barton , Maria S. Nikolova , Peter C. Searson
发明人： N. Johan Knall , Christopher J. Spindt , Gabriela S. Chakarova , Duane A. Haven , John M. Macaulay , Roger W. Barton , Maria S. Nikolova , Peter C. Searson
IPC分类号： B81C1/00 , C25F3/14 , H01J9/02 , C25F3/00
CPC分类号： H01J9/025
摘要： An impedance-assisted electrochemical method is employed for selectively removing certain material from a structure without significantly electrochemically removing certain other material of the same chemical type as the removed material.
摘要翻译：采用阻抗辅助电化学方法从结构中选择性地去除某些材料，而不用显着地电化学去除与去除的材料相同的化学类型的某些其它材料。

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