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1. 发明授权

US5610406A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5610406A
公开(公告)日：1997-03-11
申请号：US410294
申请日：1995-03-24
申请人： Junichi Kai , Mitsuhiro Nakano
发明人： Junichi Kai , Mitsuhiro Nakano
IPC分类号： H01L21/027 , H01J37/304 , H01J37/04
CPC分类号： H01J37/304 , H01J2237/20285 , H01J2237/3175
摘要： A charged particle beam exposure method which irradiates a charged particle beam on a substrate placed on a stage while continuously moving the stage and deflecting the charged particle beam by main deflector means and sub deflector means. The charged particle beam exposure method includes the steps of calculating stage moving information which describes an optimum expected locus of a stage moving speed with respect to a frame region based on a stage moving speed that enables exposure within each cell region within the frame region, by defining the frame region as being made up of a plurality of cell regions arranged in a moving direction of the stage within a drawable range in which the charged particle beam can be deflected by the main deflector means, and controlling a deflected position of the charged particle beam caused by the main deflector means by variably controlling the stage moving speed based on said stage moving information.
摘要翻译：一种带电粒子束曝光方法，其在连续移动所述载物台并且通过主偏转器装置和副偏转装置偏转所述带电粒子束的同时，将放电的粒子束照射在载置在载物台上的基板上。带电粒子束曝光方法包括以下步骤：基于能够在帧区域内的每个单元区域内进行曝光的载物台移动速度，通过以下步骤计算载物台移动速度相对于框架区域的最佳期望轨迹的步骤：将所述框架区域限定为在所述台架的移动方向上布置的多个单元区域，所述多个单元区域在所述带电粒子束可被所述主偏转器装置偏转的可绘制范围内，并且控制所述带电粒子的偏转位置通过可变地控制基于所述载物台移动信息的载物台移动速度，由主偏转装置引起的光束。

2. 发明授权

US5334846A Correction of charged particle beam exposure deflection by detecting stage position and a position detection mark 失效
标题翻译：通过检测级位置和位置检测标记校正带电粒子束曝光偏转
公开(公告)号：US5334846A
公开(公告)日：1994-08-02
申请号：US907018
申请日：1992-07-01
申请人： Mitsuhiro Nakano , Junichi Kai
发明人： Mitsuhiro Nakano , Junichi Kai
IPC分类号： H01J37/147 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/66
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/3045 , H01J2237/31766
摘要： A charged particle beam exposure apparatus is provided with a source for irradiating a charged particle beam on an object which has a position detection mark provided thereon and is carried on a movable stage, a deflection part for deflecting the charged particle beam based on deflection signals, a first detection part for detecting the position detection mark of the object, a second detection part for detecting a stage position of the object and for outputting a position detection signal, a moving part for moving the stage which carries the object, and a control unit for controlling inputs and outputs of the source, the deflection part, the first and second detection parts and the moving part. The control unit corrects the deflection signals which are supplied to the deflection part so that the position detection mark is irradiated by the charged particle beam based on the position detection signal which is output from the second detection part and is related to the stage position of the object which is continuously moved by the moving part.
摘要翻译：带电粒子束曝光装置设置有用于将带电粒子束照射在其上设置有位置检测标记并携带在可移动台上的物体的源，用于基于偏转信号偏转带电粒子束的偏转部分，用于检测物体的位置检测标记的第一检测部分，用于检测物体的台位置并输出位置检测信号的第二检测部，用于移动携带物体的台的移动部，以及控制部用于控制源，偏转部分，第一和第二检测部分和移动部分的输入和输出。控制单元基于从第二检测部输出的位置检测信号来校正供给到偏转部的偏转信号，使得位置检测标记被带电粒子束照射，并且与位置检测标记被移动部件连续移动的物体。

3. 发明授权

US5329130A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5329130A
公开(公告)日：1994-07-12
申请号：US924638
申请日：1992-08-04
申请人： Junichi Kai , Hiroshi Yasuda , Kazutaka Taki , Mitsuhiro Nakano
发明人： Junichi Kai , Hiroshi Yasuda , Kazutaka Taki , Mitsuhiro Nakano
IPC分类号： H01J37/317 , H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/30455 , H01J2237/30488 , H01J2237/31766
摘要： A charged particle beam exposure method is used to draw a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam. The method includes moving the stage in a direction parallel to an axis of a coordinate system of the substrate; generating first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of an reference position of a pattern region including the pattern to be drawn relative to a target position of the stage, and for obtaining second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern to be drawn from the reference position of the pattern region to which the pattern belongs; carrying out with respect to first deflection data D.sub.1 a first correcting operation including correction of pattern distortion inherent to a charged particle beam exposure apparatus, and for carrying out the first correcting operation and a second correcting operation with respect to second deflection data D.sub.2 after making a coordinate conversion to the coordinate system of the stage, where second correcting operation corrects a rotation error component relative to the stage caused by movement of the substrate; obtaining third deflection data D.sub.3 ' which describes a position coordinate of the pattern to be drawn from the present position of the stage by adding corrected first deflection data D.sub.1 ' and corrected second deflection data D.sub.2 '; and controlling a deflector based on third deflection data D.sub.3 '.
摘要翻译：使用带电粒子束曝光方法通过偏转带电粒子束在连续移动的台上承载的基板上绘制图案。该方法包括在平行于基板的坐标系的轴的方向上移动平台; 通过获得包括相对于舞台的目标位置的要绘制的图案的图案区域的基准位置的位置坐标，并且获得坐标系的第二偏转数据D2，从而在舞台的坐标系中产生第一偏转数据D1 描述从图案所属的图案区域的参考位置绘制的图案的位置坐标的基板的系统; 对于第一偏转数据D1执行包括对带电粒子束曝光装置固有的图案失真的校正的第一校正操作，并且在进行第一校正操作和关于第二偏转数据D2的第二校正操作之后坐标转换到舞台的坐标系，其中第二校正操作校正相对于由衬底的移动引起的舞台的旋转误差分量; 获得第三偏转数据D3'，其通过加上校正的第一偏转数据D1'和校正的第二偏转数据D2'来描述从舞台的当前位置绘制的图案的位置坐标; 以及基于第三偏转数据D3'控制偏转器。

4. 发明授权

US6118129A Method and system for exposing an exposure pattern on an object by a charged particle beam which is shaped into a plurality of beam elements 有权
标题翻译：用于通过成形为多个光束元件的带电粒子束曝光物体上的曝光图案的方法和系统
公开(公告)号：US6118129A
公开(公告)日：2000-09-12
申请号：US283974
申请日：1999-04-01
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A method for exposing an exposure pattern on an object by a charged particle beam, including the steps of: shaping a charged particle beam into a plurality of charged particle beam elements in response to first bitmap data indicative of an exposure pattern, such that the plurality of charged particle beam elements are selectively turned off in response to the first bitmap data; focusing the charged particle beam elements upon a surface of an object; and scanning the surface of the object by the charged particle beam elements; the step of shaping including the steps of: expanding pattern data of said exposure pattern into second bitmap data having a resolution of n times (n.gtoreq.2) as large as, and m times (m.gtoreq.1) as large as, a corresponding resolution of the first bitmap data, respectively in X- and Y-directions; dividing the second bitmap data into cells each having a size of 2n bits in the X-direction and 2m bits in said Y-direction; and creating the first bitmap data from the second bitmap data by selecting four data bits from each of the cells, such that a selection of the data bits is made in each of the cells with a regularity in the X- and Y-directions and such that the number of rows in the X-direction and the number of columns in the Y-direction are both equal to 3 or more.
摘要翻译：一种用于通过带电粒子束曝光在物体上的曝光图案的方法，包括以下步骤：响应于指示曝光图案的第一位图数据，将带电粒子束成形为多个带电粒子束元件，使得多个响应于第一位图数据选择性地关闭带电粒子束元件; 将带电粒子束元件聚焦在物体的表面上; 并通过带电粒子束元件扫描物体的表面; 整形步骤包括以下步骤：将所述曝光图案的图案数据扩展为分辨率为n倍（n> / = 2）分辨率的第二位图数据，并且m倍（m> / = 1），分别在X和Y方向上分别对应的第一位图数据的分辨率; 将第二位图数据分割成在X方向上具有2n位大小和在所述Y方向上具有2m位的单元，以及通过从每个单元中选择四个数据位来从第二位图数据创建第一位图数据，使得在每个单元格中以X方向和Y方向上的规则性进行数据位的选择， X方向上的行数和Y方向上的列数都等于3或更大。

5. 发明授权

US5721432A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5721432A
公开(公告)日：1998-02-24
申请号：US670256
申请日：1996-06-20
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间在晶片区域和芯片区域。为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

6. 发明授权

US5369282A Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput 失效
标题翻译：电子束曝光方法和用于以改进的精度和生产量将衬底上的图案曝光的系统
公开(公告)号：US5369282A
公开(公告)日：1994-11-29
申请号：US98875
申请日：1993-07-29
申请人： Soichiro Arai , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae
发明人： Soichiro Arai , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae
IPC分类号： G03F7/20 , H01J37/317 , H01J37/302
CPC分类号： G03F7/70383 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J37/3177 , H01J2237/31761 , H01J2237/31776
摘要： An electron beam exposure process includes a step of producing a plurality of electron beam elements from a single electron beam by shaping and radiating the plurality of electron beam elements on a substrate. The exposure is achieved in a plurality of times with respective electron beam patterns by means of different sets of electron beam elements, wherein the electron beam elements of different sets are produced simultaneously and deflected simultaneously so as to scan the substrate consecutively. The electron beam elements in one set are offset from corresponding electron beam elements of the other set by a pitch of M/N wherein N represents the number of the electron beam sets and M is an integer smaller than N.
摘要翻译：电子束曝光工艺包括通过在衬底上成形和辐射多个电子束元件从单个电子束产生多个电子束元件的步骤。通过不同组的电子束元件，利用各种电子束图案多次实现曝光，其中同时产生不同组的电子束元件并同时偏转，以便连续地扫描衬底。一组中的电子束元件以M / N的间距偏离另一组的相应电子束元素，其中N表示电子束组的数量，M是小于N的整数。

7. 发明授权

US6057907A Method of and system for exposing pattern on object by charged particle beam 失效
标题翻译：通过带电粒子束对物体曝光图案的方法和系统
公开(公告)号：US6057907A
公开(公告)日：2000-05-02
申请号：US132698
申请日：1998-08-12
申请人： Takamasa Satoh , Soichiro Arai , Kenichi Miyazawa , Yoshihisa Ooaeh , Junichi Kai , Hiroshi Yasuda
发明人： Takamasa Satoh , Soichiro Arai , Kenichi Miyazawa , Yoshihisa Ooaeh , Junichi Kai , Hiroshi Yasuda
IPC分类号： G03F7/20 , H01J37/302 , H01J37/317 , H01L21/027 , G03B27/42 , A61N5/00 , G03B27/54
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/3023 , H01J37/3174 , Y10S430/143
摘要： Before figure data are expanded into a bitmap, a checksum is calculated in unit of bitmap data corresponding to a cell stripe of scanning over which continuous exposure is possible. When the checksum is calculated after expanding the data into the bitmap, the interim calculation result of refocus values is used. In exposure, exposing k number of sub rectangular areas by repeating a sub scanning k number of times, jumping a deflection by a main deflector toward an center of remaining sub rectangular areas whose number is (p-k) inside a main rectangular areas and exposing remained (p-k) number of the sub rectangular areas by repeating the sub scanning (p-k) times after the jumping is settled. In an amplifier & low pass filter for supplying a drive voltage to a sub deflector, the cutoff frequency is lowed during flyback in a sawtooth waveform without changing an amplification factor.
摘要翻译：在将图形数据扩展为位图之前，以对应于可能进行连续曝光的扫描单元条纹的位图数据为单位计算校验和。当在将数据扩展到位图之后计算校验和时，使用重新聚焦值的中间计算结果。在曝光中，通过重复次扫描k次曝光k个子矩形区域，通过主偏转器向主矩形区域内的数量为（pk）的剩余子矩形区域的中心跳跃并保持残留（ pk）通过在跳跃之后重复次扫描（pk）次来确定次矩形区域的数量。在用于向副偏转器提供驱动电压的放大器和低通滤波器中，在锯齿波形的反激期间，截止频率降低，而不改变放大因子。

8. 发明授权

US5631113A Electron-beam exposure system for reduced distortion of electron beam spot 失效
标题翻译：电子束曝光系统，减少电子束斑变形
公开(公告)号：US5631113A
公开(公告)日：1997-05-20
申请号：US435157
申请日：1995-05-05
申请人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
发明人： Takamasa Satoh , Hiroshi Yasuda , Akio Yamada , Junichi Kai , Yoshihisa Oae , Keiji Yamada , Toru Oshima
IPC分类号： H01L21/027 , H01J37/153 , G03L5/00 , H01J37/00
CPC分类号： H01J37/153 , H01J2237/1504 , H01J2237/1532 , H01J2237/3175
摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.
摘要翻译：电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

9. 发明授权

US5614725A Charged particle beam exposure system and method 失效
标题翻译：带电粒子束曝光系统及方法
公开(公告)号：US5614725A
公开(公告)日：1997-03-25
申请号：US610190
申请日：1996-03-04
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要翻译：带电粒子束曝光方法包括以下步骤：创建指示要曝光的图案的点阵图形数据，将点图案数据存储在具有第一存取速度的第一存储装置中，将点图案数据从第一存储装置传送到第二存储装置具有第二较高访问速度，从第二存储装置读出点阵图形数据，并响应于通过消隐从第二存储装置读出的点图形数据产生多个带电粒子束孔径阵列，其中消隐孔阵列包括多个孔，每个孔响应于点图案数据而导致与孔相关的改变的粒子束的导通和关断。

10. 发明授权

US4516030A Scanning electron beam exposure system 失效
标题翻译：扫描电子束曝光系统
公开(公告)号：US4516030A
公开(公告)日：1985-05-07
申请号：US423644
申请日：1982-09-27
申请人： Haruo Tsuchikawa , Junichi Kai
发明人： Haruo Tsuchikawa , Junichi Kai
IPC分类号： G03F1/00 , G03F1/54 , G03F7/20 , H01J37/18 , H01J37/317 , H01L21/027 , H01L21/30 , B65G65/30 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/18 , H01J37/3174 , H01L21/30 , H01J2237/184 , H01J2237/204 , H01J2237/31766 , H01J2237/31767
摘要： A scanning electron beam exposure system which comprises a main chamber (1), a subchamber (8), vacuum pumps (12, 13) and valves (10, 11, 14.about.16). The projection of an electron beam onto a workpiece within the main chamber is inhibited while an electrical or mechanical noise generated by at least one of the valves substantially exists.
摘要翻译：一种扫描电子束曝光系统，包括主室（1），子室（8），真空泵（12,13）和阀（10,11,14 D差分16）。电子束在主室内的工件上的投射被抑制，同时由至少一个阀门产生的电气或机械噪声基本上存在。

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