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1. 发明授权

US4487678A Dry-etching apparatus 失效
标题翻译：干式蚀刻装置
公开(公告)号：US4487678A
公开(公告)日：1984-12-11
申请号：US597749
申请日：1984-04-06
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi , Takashi Kamimura , Teru Fujii
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi , Takashi Kamimura , Teru Fujii
IPC分类号： H01J37/18 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/677 , C23C15/00
CPC分类号： H01L21/302 , H01J37/185 , H01L21/67069 , H01L21/67126 , H01L21/67745
摘要： The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.
摘要翻译：本发明涉及一种用于蚀刻形成在晶片上的铝布线膜的干蚀刻装置，更具体地说涉及一种能够在其干蚀刻期间去除沉积在晶片表面上的氯化物的干蚀刻装置，以及作为抗蚀剂膜，而不必将晶片取出。该干式蚀刻装置设置有蚀刻室，通过闸阀附着到蚀刻室的真空室以及与真空前厅连接的后处理室。该设备被形成为将去除到真空前厅的蚀刻的晶片从其中被送到后处理室，然后将经后处理的晶片再次移至真空前厅，然后从其中移除到大气中。

2. 发明授权

US4744660A Apparatus for measuring difference in shallow level 失效
标题翻译：用于测量浅层差异的装置
公开(公告)号：US4744660A
公开(公告)日：1988-05-17
申请号：US850683
申请日：1986-04-11
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
IPC分类号： G01B11/22 , G01B9/02
CPC分类号： G01B11/22
摘要： An apparatus for measuring a difference in level in a sample comprises a light source section which provides illumination light of a variable-wavelength. The illumination light is irradiated onto the sample. A group of filters is provided for shielding diffraction light rays of O-order or other than O-order of the light reflected from the sample. The intensity of interference light of the light rays not shielded by the filter group is detected by a light detector which in turn converts it into an electric signal. An arithmetic operation unit receives the electric signal while the wavelength of the illumination light from the light source section is continuously varied. In the arithmetic unit, wavelengths at which the electric signal or detected light intensity takes extreme values are determined, and the level difference in the sample is determined on the basis of those wavelengths.
摘要翻译：用于测量样品中的电平差的装置包括提供可变波长的照明光的光源部分。将照明光照射到样品上。提供了一组滤光器，用于屏蔽从样品反射的光的O级或O级的衍射光线。不被滤光器组屏蔽的光线的干涉光的强度由光检测器检测，光检测器又将其转换为电信号。算术运算单元接收电信号，同时来自光源部分的照明光的波长连续变化。在算术单元中，确定电信号或检测光强取极值的波长，并根据这些波长确定样本中的电平差。

3. 发明授权

US4615620A Apparatus for measuring the depth of fine engraved patterns 失效
标题翻译：用于测量精细雕刻图案深度的装置
公开(公告)号：US4615620A
公开(公告)日：1986-10-07
申请号：US685550
申请日：1984-12-24
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
IPC分类号： G01B11/22
CPC分类号： G01B11/22
摘要： An apparatus for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.
摘要翻译：一种用于以非接触方式测量在衬底的表面上以周期性图案蚀刻形成的凹坑和凹槽的深度的装置。该测量基于通过对样品照射具有可变波长的光束而不考虑第0级的衍射强度的检测。而传统的测量系统对第0级的衍射光线（即反射光的主要分量）敏感，这阻碍了检测到承载深度信息的较高阶衍射光线。

4. 再颁专利

USRE33424E Apparatus and method for measuring the depth of fine engraved patterns 失效
标题翻译：用于测量精细雕刻图案深度的装置和方法
公开(公告)号：USRE33424E
公开(公告)日：1990-11-06
申请号：US254964
申请日：1988-10-07
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
IPC分类号： G01B11/22
CPC分类号： G01B11/22
摘要： An apparatus .Iadd.and method .Iaddend.for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.

5. 发明授权

US4840487A Measuring apparatus for etching pits 失效
标题翻译：用于蚀刻凹坑的测量装置
公开(公告)号：US4840487A
公开(公告)日：1989-06-20
申请号：US875980
申请日：1986-06-19
申请人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
发明人： Minori Noguchi , Toru Otsubo , Susumu Aiuchi
IPC分类号： H01L21/66 , G01B11/00 , G01B11/22 , H01J37/32
CPC分类号： H01J37/32935 , G01B11/22
摘要： An apparatus for measuring dry etching pits formed in a semiconductor device during the manufacture thereof by employing optical means. Wiring on semiconductor devices increasingly become fine or minute, i.e., the size of wiring of some devices is less than 1 .mu.m. A technical matter to be solved is to effect highly accurate dimensional measurement in such submicron region. The apparatus has a .theta. stage which is additionally provided on an XY stage, and a mechanism which provides excellent selectivity in detection of interference intensity of diffracted beam. In addition, a short wavelength laser, such as a He-Ne, He-Cd, N.sub.2 or Ar laser, is employed as a laser source. As a practical advantage, it is possible to monitor etching of a pit with a depth on the order of 10 .mu.m with respect to a pattern with a planar dimension of 0.3 .mu.m to 1.0 .mu.m.
摘要翻译：一种用于测量在其制造期间在半导体器件中形成的干蚀刻凹坑的装置，其通过采用光学装置。半导体器件上的布线越来越细微或微小，即某些器件的布线尺寸小于1μm。要解决的技术问题是在这样的亚微米区域中实现高度精确的尺寸测量。该装置具有另外设置在XY平台上的θ级，以及在检测衍射光束的干涉强度方面提供优异的选择性的机构。此外，使用诸如He-Ne，He-Cd，N2或Ar激光器的短波长激光器作为激光源。作为实际的优点，可以相对于平面尺寸为0.3μm〜1.0μm的图案来监视深度为10μm左右的凹坑的蚀刻。

6. 发明授权

US08729514B2 Surface inspection apparatus and method thereof 有权
标题翻译：表面检查装置及其方法
公开(公告)号：US08729514B2
公开(公告)日：2014-05-20
申请号：US13114160
申请日：2011-05-24
申请人： Ichiro Ishimaru , Minori Noguchi , Ichiro Moriyama , Yoshikazu Tanabe , Yasuo Yatsugake , Yukio Kenbou , Kenji Watanabe , Hirofumi Tsuchiyama
发明人： Ichiro Ishimaru , Minori Noguchi , Ichiro Moriyama , Yoshikazu Tanabe , Yasuo Yatsugake , Yukio Kenbou , Kenji Watanabe , Hirofumi Tsuchiyama
IPC分类号： G01N21/88
CPC分类号： G01N21/88 , G01N21/474 , G01N21/94 , G01N21/9501 , G01N21/9503 , G01N2021/8825 , G01N2021/8854
摘要： A defect inspection apparatus including: a first illumination optical system which is configured to illuminate the inspection area on a sample surface from a normal line direction or a direction near thereof with respect to said sample surface; a second illumination optical system which is configured to illuminate said inspection area from a slant direction with respect to said sample surface; a detection optical system having a plurality of first detectors which are located, in front of, on the sides of, and behind said inspection area, respectively, with respect to the illumination direction of said second illumination optical system, and where the regular reflected light component, from said sample surface, by illumination light of said second illumination optical system, is not converged; and a signal processing system which is configured to inspect a defect, upon basis of signals obtained from said plurality of first detectors.
摘要翻译：一种缺陷检查装置，包括：第一照明光学系统，被配置为从相对于所述样品表面的法线方向或近似的方向照射样品表面上的检查区域; 第二照明光学系统，被配置为相对于所述样品表面从倾斜方向照射所述检查区域; 检测光学系统，具有分别相对于所述第二照明光学系统的照明方向位于所述检查区域的所述检查区域的前方和后方的多个第一检测器，并且其中所述规则反射光从所述样品表面通过所述第二照明光学系统的照明光分量不会收敛; 以及信号处理系统，其被配置为基于从所述多个第一检测器获得的信号来检查缺陷。

7. 发明申请

US20120313650A1 INSPECTION DEVICE AND INSPECTION METHOD 审中-公开
标题翻译：检查装置和检查方法
公开(公告)号：US20120313650A1
公开(公告)日：2012-12-13
申请号：US13580273
申请日：2010-12-01
申请人： Hiroshi Kawaguchi , Minori Noguchi , Kenji Aiko , Masami Makuuchi
发明人： Hiroshi Kawaguchi , Minori Noguchi , Kenji Aiko , Masami Makuuchi
IPC分类号： G01R27/26
CPC分类号： H01M10/04 , H01M4/04 , H01M4/13 , H01M10/0409 , H01M10/052 , H01M10/058
摘要： An inspection device for detecting small foreign bodies is provided with a first electrode and a second electrode disposed on either side of the inspection target, a power source connected to the aforementioned first electrode, a conveyance speed control unit for controlling the conveyance speed of the aforementioned inspection target, a current detection unit which, connected to the aforementioned second electrode, detects currents generated by changes in the static capacitance formed between the aforementioned first electrode and the aforementioned second electrode, and a defect detection unit which detects defects on the basis of the aforementioned current. Furthermore, the aforementioned second electrode rotates in the direction opposite of the conveyance direction of the aforementioned inspection target. Furthermore, the aforementioned power source includes a DC or an AC power source.
摘要翻译：用于检测小异物的检查装置设置有设置在检查对象的两侧的第一电极和第二电极，连接到上述第一电极的电源，用于控制上述第一电极的输送速度的输送速度控制单元检测对象，连接到上述第二电极的电流检测单元，检测由上述第一电极和上述第二电极之间形成的静电电容的变化而产生的电流;以及缺陷检测单元，其基于上述电流。此外，上述第二电极沿与上述检查对象的输送方向相反的方向旋转。此外，上述电源包括DC或AC电源。

8. 发明授权

US08319960B2 Defect inspection system 失效
标题翻译：缺陷检查系统
公开(公告)号：US08319960B2
公开(公告)日：2012-11-27
申请号：US12770337
申请日：2010-04-29
申请人： Kenji Aiko , Shuichi Chikamatsu , Minori Noguchi , Hisafumi Iwata
发明人： Kenji Aiko , Shuichi Chikamatsu , Minori Noguchi , Hisafumi Iwata
IPC分类号： G01N21/88
CPC分类号： H04N7/18 , G01N21/9501 , G01N21/956 , G01N2021/8822 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A defect inspection system can suppress an effect of light from a sample rough surface or a regular circuit pattern and increasing a gain of light from a defect such as a foreign material to detect the defect on the sample surface with high sensitivity. When a lens with a large NA value is used, the outer diameter of the lens is 10a, and an angle between the sample surface and a traveling direction of the light from a defect is α1. An oblique detection optics system receives the light from the defect at a reduced elevation angle α2 with respect to the sample surface to reduce light from the sample rough surface, an oxide film rough bottom surface, and a circuit pattern, and to increase the amount of the light from the defect and detected. The diameter 10a of a lens is smaller than the diameter 10b, resulting in a reduction in the ability to focus the scattered light. When a lens with an outer diameter 10c is used to improve the focus ability, the lens interferes with the sample. To avoid the interference, a portion of the lens interfering with the sample is removed. The lens has an aperture larger than the diameter 10b while the lens receives the light scattered at the elevation angle α2, making it possible to improve the ability to detect defects and lens performance simultaneously.
摘要翻译：缺陷检查系统可以抑制来自样品粗糙表面或常规电路图案的光的影响，并且增加来自诸如异物的缺陷的光的增益以高灵敏度检测样品表面上的缺陷。当使用具有大NA值的透镜时，透镜的外径为10a，并且样品表面与来自缺陷的光的行进方向之间的角度为α1。倾斜检测光学系统以相对于样品表面的降低的仰角α2接收来自缺陷的光，以减少来自样品粗糙表面，氧化膜粗糙底表面和电路图案的光，并且增加来自缺陷的光并检测。透镜的直径10a小于直径10b，导致散射光聚焦的能力降低。当使用外径为10c的透镜来提高聚焦能力时，透镜会干扰样品。为了避免干扰，去除了与样品干扰的一部分透镜。透镜具有大于直径10b的孔径，而透镜接收以仰角α2散射的光，从而可以提高同时检测缺陷和透镜性能的能力。

9. 发明授权

US08228496B2 Defect inspection method and defect inspection apparatus 有权
标题翻译：缺陷检查方法和缺陷检查装置
公开(公告)号：US08228496B2
公开(公告)日：2012-07-24
申请号：US12830204
申请日：2010-07-02
申请人： Shuichi Chikamatsu , Minori Noguchi , Masayuki Ochi , Kenji Aiko
发明人： Shuichi Chikamatsu , Minori Noguchi , Masayuki Ochi , Kenji Aiko
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N2021/9513
摘要： Provided are a defect inspection apparatus having a large range for receiving light scattering from fine defects while securing a sufficiently large signal strength; and a defect inspection method for the same. The defect inspection apparatus includes: a stage part capable of traveling relative to optical systems with a substrate to be inspected mounted on the stage part; an illumination optical system for illuminating an inspection area on the substrate; a detection optical system for detecting light coming from the inspection area on the substrate; an image sensor for converting, to a signal, an image which is formed on the image sensor by the detection optical system; a signal processor for detecting defects by processing the signal from the image sensor; and a plane reflecting mirror, arranged between the detection optical system and the substrate, for transmitting the light, which comes from the substrate, to the detection optical system.
摘要翻译：提供一种具有大范围的缺陷检查装置，用于在确保足够大的信号强度的同时从细小的缺陷接收光散射; 及其缺陷检查方法。缺陷检查装置包括：能够相对于光学系统行进的载台部件，其中待检查的基板安装在平台部分上; 用于照射基板上的检查区域的照明光学系统; 用于检测来自基板上的检查区域的光的检测光学系统; 用于通过检测光学系统将形成在图像传感器上的图像转换成信号的图像传感器; 信号处理器，用于通过处理来自图像传感器的信号来检测缺陷; 以及布置在检测光学系统和基板之间的用于将来自基板的光传输到检测光学系统的平面反射镜。

10. 发明申请

US20120062890A1 Method and Its Apparatus for Inspecting Particles or Defects of a Semiconductor Device 审中-公开
标题翻译：检测颗粒的方法及其装置或半导体器件的缺陷
公开(公告)号：US20120062890A1
公开(公告)日：2012-03-15
申请号：US13298079
申请日：2011-11-16
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N15/02
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

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