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1. 发明申请

US20100039747A1 ELECTROSTATIC CHUCK ASSEMBLY 有权
标题翻译：静电块组件
公开(公告)号：US20100039747A1
公开(公告)日：2010-02-18
申请号：US12539410
申请日：2009-08-11
申请人： Steven V. Sansoni , Cheng-Hsiung Tsai , Shambhu N. Roy , Karl M. Brown , Vijay D. Parkhe , Hari Ponnekanti
发明人： Steven V. Sansoni , Cheng-Hsiung Tsai , Shambhu N. Roy , Karl M. Brown , Vijay D. Parkhe , Hari Ponnekanti
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01J37/32431 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H01L21/68785 , H01L2924/0002 , H02N13/00 , H01L2924/00
摘要： Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body.
摘要翻译：本发明的实施例提供了一种经济高效的静电卡盘组件，其能够在超高真空环境中在宽的温度范围内运行，同时使静电卡盘组件内的热机械应力最小化。在一个实施例中，静电卡盘组件包括具有夹持电极的介电体，该夹持电极包括与电介质体的CTE匹配的具有热膨胀系数（CTE）的金属基质复合材料。

2. 发明授权

US08390980B2 Electrostatic chuck assembly 有权
标题翻译：静电吸盘组件
公开(公告)号：US08390980B2
公开(公告)日：2013-03-05
申请号：US12539410
申请日：2009-08-11
申请人： Steven V. Sansoni , Cheng-Hsiung Tsai , Shambhu N. Roy , Karl M. Brown , Vijay D. Parkhe , Hari Ponnekanti
发明人： Steven V. Sansoni , Cheng-Hsiung Tsai , Shambhu N. Roy , Karl M. Brown , Vijay D. Parkhe , Hari Ponnekanti
IPC分类号： H02N13/00
CPC分类号： H01L21/6833 , H01J37/32431 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H01L21/68785 , H01L2924/0002 , H02N13/00 , H01L2924/00
摘要： Embodiments of the present invention provide a cost effective electrostatic chuck assembly capable of operating over a wide temperature range in an ultra-high vacuum environment while minimizing thermo-mechanical stresses within the electrostatic chuck assembly. In one embodiment, the electrostatic chuck assembly includes a dielectric body having chucking electrodes which comprise a metal matrix composite material with a coefficient of thermal expansion (CTE) that is matched to the CTE of the dielectric body.
摘要翻译：本发明的实施例提供了一种经济高效的静电卡盘组件，其能够在超高真空环境中在宽的温度范围内运行，同时使静电卡盘组件内的热机械应力最小化。在一个实施例中，静电卡盘组件包括具有夹持电极的介电体，该夹持电极包括与电介质体的CTE匹配的具有热膨胀系数（CTE）的金属基质复合材料。

3. 发明申请

US20090280597A1 Surface cleaning and texturing process for crystalline solar cells 失效
标题翻译：晶体太阳能电池的表面清洁和纹理化工艺
公开(公告)号：US20090280597A1
公开(公告)日：2009-11-12
申请号：US12383350
申请日：2009-03-23
申请人： Kapila Wijekoon , Rohit Mishra , Michael P. Stewart , Timothy Weidman , Hari Ponnekanti , Tristan R. Holtam
发明人： Kapila Wijekoon , Rohit Mishra , Michael P. Stewart , Timothy Weidman , Hari Ponnekanti , Tristan R. Holtam
IPC分类号： H01L21/302 , C23F1/00 , H01L21/306
CPC分类号： H01L31/077 , H01L21/30608 , H01L31/02363 , H01L31/028 , H01L31/0392 , H01L31/0687 , H01L31/075 , Y02E10/544 , Y02E10/547 , Y02E10/548
摘要： Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 μm to about 10 μm on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 μm to about 8 μm on the substrate.
摘要翻译：提供了表面纹理化晶体硅衬底的方法。在一个实施方案中，该方法包括提供晶体硅衬底，用包含润湿剂的碱性溶液润湿衬底，以及在衬底上形成具有约1μm至约10μm的深度结构的织构化表面。在另一个实施例中，执行衬底纹理过程的方法包括提供晶体硅衬底，在HF水溶液中预清洗衬底，用包含聚乙二醇（PEG）化合物的KOH水溶液润湿衬底，并形成织构表面具有在基底上具有约3μm至约8μm的深度的结构。

4. 发明申请

US20110033638A1 METHOD AND APPARATUS FOR DEPOSITION ON LARGE AREA SUBSTRATES HAVING REDUCED GAS USAGE 审中-公开
标题翻译：用于减少气体使用的大面积基底沉积的方法和装置
公开(公告)号：US20110033638A1
公开(公告)日：2011-02-10
申请号：US12538682
申请日：2009-08-10
申请人： Hari Ponnekanti , Randhir Thakur
发明人： Hari Ponnekanti , Randhir Thakur
IPC分类号： B01J19/08 , C23C16/54
CPC分类号： C23C16/45565 , C23C16/45519 , C23C16/45589 , C23C16/483 , C23C16/503 , C23C16/5096 , C23C16/52 , C23C16/54 , H01J37/3244 , H01J37/32449 , H01J37/32761
摘要： A method and apparatus for processing a substrate is described. The apparatus includes a showerhead assembly in a processing chamber. The showerhead assembly is sized to cover a fraction of the length of the substrate. The showerhead assembly includes a first gas channel on a perimeter thereof and a second gas channel in a center thereof. The perimeter gas channel is configured to flow a first gas toward the substrate to form a gas curtain containing a reduced volume processing region between the showerhead and the substrate. Various thermal and/or deposition processes are performed on the substrate within the region interior of the gas curtain.
摘要翻译：描述了用于处理衬底的方法和设备。该设备包括处理室中的喷头组件。喷头组件的尺寸被设计成覆盖衬底长度的一部分。喷头组件包括在其周边上的第一气体通道和在其中心的第二气体通道。周边气体通道被配置为使第一气体朝向衬底流动以形成包含喷淋头和衬底之间的体积减小的处理区域的气幕。在气幕的区域内部的基板上执行各种热和/或沉积工艺。

5. 发明申请

US20080105202A9 Tandem process chamber 失效
标题翻译：串联处理室
公开(公告)号：US20080105202A9
公开(公告)日：2008-05-08
申请号：US10680656
申请日：2003-10-06
申请人： Kevin Fairbairn , Jessica Barzilai , Hari Ponnekanti , W.N. Taylor
发明人： Kevin Fairbairn , Jessica Barzilai , Hari Ponnekanti , W.N. Taylor
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/67167 , C23C16/4412 , C23C16/54 , H01L21/67017 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
摘要翻译：本发明提供了一种用于真空处理的设备，其通常包括具有形成在其中的多个隔离室的外壳，设置在每个处理室中的气体分配组件，连接到多个隔离室的气源，以及连接到每个气体分配组件

6. 发明授权

US06230652B1 Apparatus and methods for upgraded substrate processing system with microwave plasma source 有权
标题翻译：具有微波等离子体源的升级基板处理系统的装置和方法
公开(公告)号：US06230652B1
公开(公告)日：2001-05-15
申请号：US09480923
申请日：2000-01-11
申请人： Tsutomu Tanaka , Mukul Kelkar , Kevin Fairbairn , Hari Ponnekanti , David Cheung
发明人： Tsutomu Tanaka , Mukul Kelkar , Kevin Fairbairn , Hari Ponnekanti , David Cheung
IPC分类号： C23C1600
CPC分类号： H01J37/32862 , C23C16/511 , C23C16/52 , H01J37/32192 , H01J37/32357
摘要： An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.
摘要翻译：根据具体实施例的用于提供用于有效清洁腔室的等离子体的升级CVD系统的装置和方法。使用本发明的升级的CVD系统也可以实现在基板上的蚀刻或沉积层。在一个具体实施方案中，本发明提供了一种易于拆卸，方便处理且相对便宜的微波等离子体源，作为对现有CVD设备的改进或可移除的添加。在优选实施例中，远程微波等离子体源有效地提供等离子体，而不需要等离子体施加管的液体冷却。在另一个实施方案中，本发明提供了一种改进的CVD装置或改进现有的CVD装置，其能够产生等离子体，其能够在需要时有效地清洁腔室。

7. 发明申请

US20060102078A1 Wafer fab 审中-公开
标题翻译：晶圆厂
公开(公告)号：US20060102078A1
公开(公告)日：2006-05-18
申请号：US10991722
申请日：2004-11-18
申请人： Kevin Fairbairn , Hari Ponnekanti , Christopher Lane , Robert Weiss , Ian Latchford , Terry Bluck
发明人： Kevin Fairbairn , Hari Ponnekanti , Christopher Lane , Robert Weiss , Ian Latchford , Terry Bluck
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/67201 , H01L21/67161 , H01L21/67173 , H01L21/6719 , H01L21/67745
摘要： Described is a method for manufacturing wafers and a manufacturing system in which the footprint is substantially contained in a size approximating the processing chambers. Single wafers move horizontally through the system and processing occurs simultaneously in groups of processing chambers. Various manufacturing processes employed in making semiconductor wafers are included as processing chambers in the system.
摘要翻译：描述了一种用于制造晶片的方法和制造系统，其中占地面积基本上包含在接近处理室的尺寸中。单个晶片水平移动通过系统，处理在一组处理室中同时进行。在制造半导体晶片中使用的各种制造工艺被包括在系统中作为处理室。

8. 发明授权

US6163007A Microwave plasma generating apparatus with improved heat protection of sealing O-rings 有权
标题翻译：微波等离子体发生装置具有改进的密封O形圈的热保护
公开(公告)号：US6163007A
公开(公告)日：2000-12-19
申请号：US272898
申请日：1999-03-19
申请人： Tsutomu Tanaka , Thomas Nowak , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn
发明人： Tsutomu Tanaka , Thomas Nowak , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , B23K9/00
CPC分类号： H01J37/32458 , H01J37/32192 , H01J2237/166
摘要： Apparatus for dissociating cleaning gas such as NF.sub.3 for use in semiconductor manufacturing includes a housing enclosing a microwave resonator to which microwave energy is applied, a plasma tube within the housing and within which cleaning gas flows and is dissociated by the microwave energy. The plasma tube has two ends into and out of which the cleaning gas flows. A first and a second structural assembly thermally protects and seals each end of the plasma tube against atmospheric leaks. Each structural assembly has a metal collar and a sealing O-ring fitting tightly around a respective end of the plasma tube. Each metal collar includes a thin layer of elastomeric material of high thermal conductivity for conducting heat through the collar away from the end of the plasma tube thereby protecting the O-ring from heat damage. This permits the apparatus to operate more efficiently. A fan forces ambient air over the apparatus.
摘要翻译：用于解离诸如NF3的清洁气体用于半导体制造的装置包括：包围微波谐振器的壳体，微波能量被施加到微波谐振器，壳体内的等离子体管，其中清洁气体流动并由微波能量解离。等离子体管具有两个进入和离开清洁气体的端部。第一和第二结构组件热保护和密封等离子体管的每一端以抵抗大气泄漏。每个结构组件具有金属环和密封O形圈，紧密地围绕等离子体管的相应末端。每个金属套环包括具有高导热性的薄层弹性体材料，用于通过套环远离等离子体管的端部传导热量，从而保护O形环免受热损伤。这使得设备更有效地操作。风扇迫使环境空气流过设备。

9. 发明授权

US6045618A Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment 失效
标题翻译：微波设备用于原位真空管线清洗用于基板加工设备
公开(公告)号：US6045618A
公开(公告)日：2000-04-04
申请号：US741241
申请日：1996-10-30
申请人： Sebastien Raoux , Tsutomu Tanaka , Mukul Kelkar , Hari Ponnekanti , Kevin Fairbairn , David Cheung
发明人： Sebastien Raoux , Tsutomu Tanaka , Mukul Kelkar , Hari Ponnekanti , Kevin Fairbairn , David Cheung
IPC分类号： B01D45/06 , B01D53/32 , B01D53/46 , B01J19/08 , B01J19/12 , B01J19/24 , C23C16/44 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/31 , H05H1/24 , B01D53/00
CPC分类号： H01J37/3244 , B01D45/06 , B01D53/32 , B01D53/46 , B01J19/08 , B01J19/088 , B01J19/126 , B01J19/249 , C23C16/4405 , C23C16/4412 , H01J37/32844 , H05H1/46 , B01D2257/206 , B01D2259/818 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , H01J2237/022 , H05H2001/4622 , H05H2001/4667 , H05H2245/1215 , Y02C20/30 , Y10S55/30
摘要： An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second members having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber, and the collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A microwave plasma generation system supplies microwave energy within the fluid conduit to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
摘要翻译：一种用于最小化衬底处理室的排气管线中沉积的装置。该装置包括具有在它们之间限定流体导管的相对表面的第一和第二构件。流体导管包括在入口和出口之间的入口，出口和收集室。该设备在其入口处连接以接收基板处理室的排气，并且收集室被构造和布置成收集流过流体管道的颗粒物质并且抑制颗粒物质从收集室排出。微波等离子体产生系统在流体导管内提供微波能量以从流体导管内的蚀刻剂气体形成等离子体。来自等离子体的成分与收集室中收集的颗粒物质发生反应，形成可以从流体导管泵出的气体产物。该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

10. 发明授权

US08900427B2 Homing device for magnetron rotating on two arms 有权
标题翻译：用于磁控管的回原点装置在两个臂上旋转
公开(公告)号：US08900427B2
公开(公告)日：2014-12-02
申请号：US13213367
申请日：2011-08-19
申请人： Keith A. Miller , Michael Allen Flanigan , Hari Ponnekanti
发明人： Keith A. Miller , Michael Allen Flanigan , Hari Ponnekanti
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller.
摘要翻译：一种磁控管致动器，用于在等离子体溅射反应器中的靶的背面中几乎任意的径向和方位角路径上移动磁控管。磁控管包括沿着腔室中心轴延伸并且耦合到两个可独立控制的旋转致动器的两个同轴旋转轴。行星齿轮机构或青蛙腿结构将轴机械地连接到磁控管以控制其径向和方位位置。垂直致动器串联地垂直移动轴以改变磁控管与目标背面的分离并补偿前表面的侵蚀。旋转致动器可以单独地联接到轴上，或者可旋转的环形齿轮可以通过分别固定和绕动的空转齿轮联接到轴。两个径向间隔的传感器检测附接到行星齿轮机构的内臂和外臂的反射器，用于归位控制器。

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