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1. 发明授权

US07550090B2 Oxygen plasma clean to remove carbon species deposited on a glass dome surface 失效
标题翻译：氧气等离子体清洁以去除沉积在玻璃圆顶表面上的碳物质
公开(公告)号：US07550090B2
公开(公告)日：2009-06-23
申请号：US11626121
申请日：2007-01-23
申请人： Quancheng Gu , Cheng-Hsiung Tsai , John C. Forster , Xiaoxi Guo , Larry Frazier
发明人： Quancheng Gu , Cheng-Hsiung Tsai , John C. Forster , Xiaoxi Guo , Larry Frazier
IPC分类号： B44C1/22 , B08B9/00 , C25F1/00
CPC分类号： C23C14/564 , Y10S438/905 , Y10S438/906
摘要： A method for in-situ cleaning of a dielectric dome surface having been used in pre-clean processes is provided. Carbon containing deposits are removed by providing a plasma of one or more oxidizing gases which react with the carbon containing films to form volatile carbon containing compounds.
摘要翻译：提供了一种用于在预清洁过程中使用的介电圆顶表面的原位清洁方法。通过提供与含碳膜反应形成含挥发性碳的化合物的一种或多种氧化气体的等离子体来除去含碳沉积物。

2. 发明申请

US20080173326A1 OXYGEN PLASMA CLEAN TO REMOVE CARBON SPECIES DEPOSITED ON A GLASS DOME SURFACE 失效
标题翻译：氧气等离子体清洁去除在玻璃表面上沉积的碳物质
公开(公告)号：US20080173326A1
公开(公告)日：2008-07-24
申请号：US11626121
申请日：2007-01-23
申请人： QUANCHENG GU , Cheng-Hsiung Tsai , John C. Forster , Xiaoxi Guo , Larry Frazier
发明人： QUANCHENG GU , Cheng-Hsiung Tsai , John C. Forster , Xiaoxi Guo , Larry Frazier
IPC分类号： B08B7/04
CPC分类号： C23C14/564 , Y10S438/905 , Y10S438/906
摘要： A method for in-situ cleaning of a dielectric dome surface having been used in pre-clean processes is provided. Carbon containing deposits are removed by providing a plasma of one or more oxidizing gases which react with the carbon containing films to form volatile carbon containing compounds.
摘要翻译：提供了一种用于在预清洁过程中使用的介电圆顶表面的原位清洁方法。通过提供与含碳膜反应形成含挥发性碳的化合物的一种或多种氧化气体的等离子体来除去含碳沉积物。

3. 发明授权

US08668816B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08668816B2
公开(公告)日：2014-03-11
申请号：US11933157
申请日：2007-10-31
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在相同或不同的室中。此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。辅助磁体可以是永磁体或电磁体。

4. 发明申请

US20110220488A1 Apparatus and Method for Improved Darkspace Gap Design in RF Sputtering Chamber 有权
标题翻译： RF溅射室中改进的暗空间间隙设计的装置和方法
公开(公告)号：US20110220488A1
公开(公告)日：2011-09-15
申请号：US12723187
申请日：2010-03-12
申请人： John C. Forster , Xianmin Tang
发明人： John C. Forster , Xianmin Tang
IPC分类号： C23C14/34
CPC分类号： H01J37/3491 , B23K1/0008 , B23K31/02 , C23C14/3407 , H01J37/3435 , H01J37/3441 , H01J2237/332 , Y10T29/49826 , Y10T29/49947
摘要： Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.
摘要翻译：公开了改进的目标组件和暗区屏蔽的设计。还公开了改善暗室间隙的溅射室和溅射室中的暗空隙的改进方法。公开了一种目标组件，其具有基本上共面的背板，并且靶与暗空间屏蔽件垂直间隔开。

5. 发明授权

US07687909B2 Metal / metal nitride barrier layer for semiconductor device applications 失效
标题翻译：用于半导体器件应用的金属/金属氮化物阻挡层
公开(公告)号：US07687909B2
公开(公告)日：2010-03-30
申请号：US11809153
申请日：2007-05-30
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
IPC分类号： H01L23/48
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.
摘要翻译：用于半导体器件应用的金属/金属氮化物阻挡层。阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

6. 发明授权

US07253109B2 Method of depositing a tantalum nitride/tantalum diffusion barrier layer system 失效
标题翻译：沉积氮化钽/钽扩散阻挡层体系的方法
公开(公告)号：US07253109B2
公开(公告)日：2007-08-07
申请号：US11069348
申请日：2005-02-28
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
IPC分类号： H01L21/44
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
摘要翻译：我们已经发现了一种提供大约从大约2埃到大约100埃的Ta N种子层的薄的方法，其可以在钽沉积在Ta上时用于诱导形成α钽 N种子层。此外，Ta N N种子层在30微米范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。在该方法的一个实施方案中，在其表面上改变TaN膜以形成Ta N N种子层。在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

7. 发明授权

US06911124B2 Method of depositing a TaN seed layer 有权
标题翻译：沉积TaN种子层的方法
公开(公告)号：US06911124B2
公开(公告)日：2005-06-28
申请号：US10246316
申请日：2002-09-17
申请人： Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Peijun Ding
发明人： Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Peijun Ding
IPC分类号： C23C14/06 , C23C14/16 , C23C14/54 , C23C14/58 , H01L21/285 , H01L21/318 , H01L21/768 , C23C14/34 , H05H1/24
CPC分类号： H01L21/2855 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876
摘要： We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ m and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
摘要翻译：我们已经发现了一种提供约大约至大约厚厚的Ta N种子层的薄膜的方法，当钽沉积在Ta上时可用于诱导形成α钽， SUB> N 种子层。此外，Ta N N种子层在30μm范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。在该方法的一个实施方案中，TaN膜在其表面上形成Ta N N种子层。在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

8. 发明授权

US06579426B1 Use of variable impedance to control coil sputter distribution 失效
标题翻译：使用可变阻抗来控制线圈溅射分布
公开(公告)号：US06579426B1
公开(公告)日：2003-06-17
申请号：US08857921
申请日：1997-05-16
申请人： James van Gogh , John C. Forster
发明人： James van Gogh , John C. Forster
IPC分类号： C23C1434
CPC分类号： H01F29/10 , H01F29/12 , H01J37/321 , H01J37/32174 , H01J37/34
摘要： Capacitances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to “time-averaging” of the RF voltage distributions along the RF coil.
摘要翻译：用于在衬底上沉积溅射靶材的膜的等离子体沉积系统中用于RF线圈的阻抗匹配盒中的电容可以在沉积工艺期间变化，使得RF线圈和衬底加热以及膜沉积，由于RF线圈的RF电压分布的“时间平均”，因此更均匀。

9. 发明授权

US06500762B2 Method of depositing a copper seed layer which promotes improved feature surface coverage 有权
标题翻译：沉积铜种子层的方法，其促进改进的特征表面覆盖
公开(公告)号：US06500762B2
公开(公告)日：2002-12-31
申请号：US10056751
申请日：2002-01-24
申请人： Imran Hashim , Hong-Mei Zhang , John C. Forster
发明人： Imran Hashim , Hong-Mei Zhang , John C. Forster
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/2855 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： We have discovered a method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. We have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at the bottom of a high aspect ratio contact via and on the walls of the via by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. An increase in the percentage of copper species which are ionized can be achieved using techniques known in the art, including but not limited to applicants' preferred technique, an inductively coupled RF ion metal plasma.
摘要翻译：我们已经发现了一种改进沉积在半导体特征表面上的铜籽晶层的台阶覆盖率的方法，该方法对于具有高纵横比的小尺寸特征特别有用。我们已经证明，可以通过增加作为离子的沉积铜物质的百分比，在高纵横比接触通孔和通孔的壁上同时增加铜种子层覆盖。获得铜种子层足够的阶梯覆盖所必需的物质电离的百分比是该特征的纵横比的函数。可以使用本领域已知的技术来实现电离的铜物质的百分比的增加，包括但不限于申请人的优选技术，电感耦合RF离子金属等离子体。

10. 发明授权

US06132566A Apparatus and method for sputtering ionized material in a plasma 失效
标题翻译：用于在等离子体中溅射电离材料的装置和方法
公开(公告)号：US06132566A
公开(公告)日：2000-10-17
申请号：US126357
申请日：1998-07-30
申请人： Ralf Hofmann , John C. Forster
发明人： Ralf Hofmann , John C. Forster
IPC分类号： C23C14/35 , C23C14/56 , H01J37/32 , C23C14/34
CPC分类号： H01J37/32477 , C23C14/358 , C23C14/564 , H01J37/321 , Y10S156/916
摘要： An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the formation of a continuous metal film over the inner surface of the shield during sputtering and deposition. The sidewalls defining the channels permit RF transmission after the surfaces directly facing the plasma are coated with metal.
摘要翻译：在具有将线圈与等离子体分离的介电屏蔽的等离子体处理系统中使用外部感应线圈。护罩包括沿着屏蔽物的面向等离子体区域的内侧设置的通道。在溅射和沉积期间，通道阻止在屏蔽的内表面上形成连续的金属膜。限定通道的侧壁在直接面向等离子体的表面被金属涂覆之后允许RF传输。

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