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1. 发明授权

US06937296B2 Flat panel display unit and method of repairing defects in its line pattern 失效
标题翻译：平板显示单元及修补其线条缺陷的方法
公开(公告)号：US06937296B2
公开(公告)日：2005-08-30
申请号：US09944866
申请日：2001-08-31
申请人： Michinobu Mizumura , Mikio Hongo , Masaaki Okunaka , Kaoru Yamada
发明人： Michinobu Mizumura , Mikio Hongo , Masaaki Okunaka , Kaoru Yamada
IPC分类号： G02F1/13 , G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G09F9/00 , H01L29/786
CPC分类号： G02F1/136259 , G02F2001/136263
摘要： Shorting defects between the scan lines and signal lines are repaired during the manufacture of a TFT or other flat panel display unit without causing liquid crystal orientation defects and production yield is thereby improved. In a TFT panel in which scan line 2 bifurcates where scan line 2 and signal line 3 intersect, the lines having a protective insulation film 8 therebetween, one leg of the scan line 2 bifurcation is cut by a laser 9 where a short 7 has been found between lines at the intersection, thereby electrically separating the short. An insulation film material 13 dispensed from a glass pipette 12 is then applied locally to the cut part and surrounding area and cured to form a new insulation film.
摘要翻译：在TFT或其他平板显示单元的制造期间，在扫描线和信号线之间的短路缺陷被修复，而不引起液晶取向缺陷，从而提高了生产成本。在其中扫描线2在扫描线2和信号线3相交处分叉的TFT面板中，其间具有保护绝缘膜8的线，扫描线2分支的一条腿被短路7已经被激光9切断在交叉点的线之间发现，从而电短路。然后将从玻璃吸管12分配的绝缘膜材料13局部施加到切割部分和周围区域并固化以形成新的绝缘膜。

2. 发明授权

US4444801A Method and apparatus for correcting transparent defects on a photomask 失效
标题翻译：用于校正光掩模上的透明缺陷的方法和装置
公开(公告)号：US4444801A
公开(公告)日：1984-04-24
申请号：US338864
申请日：1982-01-12
申请人： Mikio Hongo , Masao Mitani , Tateoki Miyauchi , Masaaki Okunaka , Katsuro Mizukoshi
发明人： Mikio Hongo , Masao Mitani , Tateoki Miyauchi , Masaaki Okunaka , Katsuro Mizukoshi
IPC分类号： G03F1/72 , H05K3/10 , H05K3/22 , B23K9/00 , B05D3/06 , G01D9/42 , G01D15/10
CPC分类号： G03F1/72 , H05K3/105 , H05K3/225
摘要： A method and apparatus for correcting transparent defects on a photomask are disclosed. A metal-organic complex solution is applied to a transparent defect portion and its periphery on the photomask. The transparent defect portion is then exposed to a visible ray or ultraviolet ray to deposit a metal, a metal oxide or a composition thereof, while the light transmission quantity through the transparent defect portion is measured. After the measurement falls below a predetermined level relative to the quantity of the transmitted light at the start of exposure, the exposure is terminated to thereby complete the correction of the transparent defects.
摘要翻译：公开了一种用于校正光掩模上的透明缺陷的方法和装置。将金属 - 有机络合物溶液施加到光掩模上的透明缺陷部分及其周边。然后透明的缺陷部分暴露于可见光或紫外线以沉积金属，金属氧化物或其组合物，同时测量通过透明缺陷部分的透光量。在相对于曝光开始时的透射光量的测量值下降到预定水平之外，终止曝光，从而完成透明缺陷的校正。

3. 发明授权

US4463073A Method and apparatus for redressing defective photomask 失效
标题翻译：用于纠正有缺陷的光掩模的方法和装置
公开(公告)号：US4463073A
公开(公告)日：1984-07-31
申请号：US394642
申请日：1982-07-01
申请人： Tateoki Miyauchi , Katsuro Mizukoshi , Mikio Hongo , Masao Mitani , Masaaki Okunaka , Takao Kawanabe , Isao Tanabe
发明人： Tateoki Miyauchi , Katsuro Mizukoshi , Mikio Hongo , Masao Mitani , Masaaki Okunaka , Takao Kawanabe , Isao Tanabe
IPC分类号： G03F1/00 , G03F1/72 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/72 , H01L21/30 , Y10S430/139 , Y10S430/146
摘要： A method and apparatus for repairing defect portions of a photomask. A complex material from which a light shading material can be deposited is applied over the photomask. A white (blank) defect region is irradiated with a continuous wave laser light beam projected in a slit-like light image to thereby convert the complex material into the shading material. After washing, a half-deposited portion formed in a peripheral portion of the light shading region is further deposited by a post-baking process. Those portions of the light shading film which depart from the desired mask pattern are removed together with black (solid) defect portion originally present in the photomask through irradiation with a pulse laser light beam. The pulse laser is constituted by a Dye-laser, while the continuous wave laser is constituted by an Ar-laser. A specific half-mirror which transmits therethrough Ar-laser light while reflecting Dye-laser light is displaceable provided. The white and the black defects are selectively centered on a same optical axis of an optical projection system including a slit and a condenser lens, whereby the white and the black defect portions are each removed through irradiation with the associated laser light projected thereto in a slit-like light image through the same optical projection system.
摘要翻译：一种用于修复光掩模的缺陷部分的方法和装置。将光阴影材料沉积的复合材料施加在光掩模上。用投影在狭缝状光图像中的连续波激光束照射白色（空白）缺陷区域，从而将复合材料转换成遮光材料。洗涤后，通过后烘烤处理进一步沉积形成在遮光区域的周边部分中的半沉积部分。通过照射脉冲激光，与原来存在于光掩模中的黑色（实心）缺陷部分一起除去遮光膜的偏离所需掩模图案的那些部分。脉冲激光由染料激光器构成，而连续波激光由Ar激光器构成。通过反射染料激光而透过其的Ar激光的特定半反射镜是可置换的。白色和黑色缺陷选择性地集中在包括狭缝和聚光透镜的光学投影系统的相同光轴上，由此白色和黑色缺陷部分通过照射投射到狭缝中的相关激光而被去除类似的光图像通过相同的光学投影系统。

4. 发明授权

US07258586B2 Method for manufacturing an organic electroluminescence display 有权
标题翻译：有机电致发光显示器的制造方法
公开(公告)号：US07258586B2
公开(公告)日：2007-08-21
申请号：US10878550
申请日：2004-06-29
申请人： Takuo Tamura , Mikio Hongo , Masaaki Okunaka , Shinichi Kato , Eiji Matsuzaki , Masato Ito , Masatomo Terakado
发明人： Takuo Tamura , Mikio Hongo , Masaaki Okunaka , Shinichi Kato , Eiji Matsuzaki , Masato Ito , Masatomo Terakado
IPC分类号： H01J9/00
CPC分类号： H01L51/56 , H01L2251/568
摘要： When any of pixels is not lit in an organic EL display having an organic EL layer between a first electrode and a second electrode, an organic layer of the pixel is observed. If the organic layer of the pixel contains foreign matter, the second electrode is separated into a region in contact with the foreign matter and a region not in contact with both the contact region and the foreign matter. Thus, not-lit display regions are reduced as less as possible, making it possible to manufacture an organic EL display excellent in display performance.
摘要翻译：当在具有第一电极和第二电极之间的有机EL层的有机EL显示器中没有点亮任何像素时，观察到像素的有机层。如果像素的有机层含有异物，则将第二电极分离成与异物接触的区域和不与接触区域和异物接触的区域。因此，尽可能地减少不亮的显示区域，使得可以制造显示性能优异的有机EL显示器。

5. 发明授权

US4510222A Photomask with corrected white defects 失效
标题翻译：具有校正白色缺陷的光掩模
公开(公告)号：US4510222A
公开(公告)日：1985-04-09
申请号：US496245
申请日：1983-05-19
申请人： Masaaki Okunaka , Katsuro Mizukoshi , Mikio Hongo , Tateoki Miyauchi
发明人： Masaaki Okunaka , Katsuro Mizukoshi , Mikio Hongo , Tateoki Miyauchi
IPC分类号： C09D1/00 , C09D10/00 , C09D11/00 , G03F1/00 , G03F1/72 , H01L21/027 , G03F9/00
CPC分类号： G03F1/72 , G03F1/54 , Y10S430/139 , Y10S430/146
摘要： A photomask with white defects that have corrected with a film comprising a mixture of silver and tantalum oxide. The film has a good resistance to chemicals.
摘要翻译：具有用包含银和氧化钽的混合物的膜校正的具有白色缺陷的光掩模。这部电影对化学品有很好的抵抗力。

6. 发明申请

US20050215163A1 Method for manufacturing an organic electroluminescence display 有权
标题翻译：有机电致发光显示器的制造方法
公开(公告)号：US20050215163A1
公开(公告)日：2005-09-29
申请号：US10878550
申请日：2004-06-29
申请人： Takuo Tamura , Mikio Hongo , Masaaki Okunaka , Shinichi Kato , Eiji Matsuzaki , Masato Ito , Masatomo Terakado
发明人： Takuo Tamura , Mikio Hongo , Masaaki Okunaka , Shinichi Kato , Eiji Matsuzaki , Masato Ito , Masatomo Terakado
IPC分类号： H05B33/10 , G09F9/30 , H01J9/00 , H01L51/50 , H05B33/12 , H05B33/14 , H05B33/22 , H05B33/26
CPC分类号： H01L51/56 , H01L2251/568
摘要： When any of pixels is not lit in an organic EL display having an organic EL layer between a first electrode and a second electrode, an organic layer of the pixel is observed. If the organic layer of the pixel contains foreign matter, the second electrode is separated into a region in contact with the foreign matter and a region not in contact with both the contact region and the foreign matter. Thus, not-lit display regions are reduced as less as possible, making it possible to manufacture an organic EL display excellent in display performance.
摘要翻译：当在具有第一电极和第二电极之间的有机EL层的有机EL显示器中没有点亮任何像素时，观察到像素的有机层。如果像素的有机层含有异物，则将第二电极分离成与异物接触的区域和不与接触区域和异物接触的区域。因此，尽可能地减少不亮的显示区域，使得可以制造显示性能优异的有机EL显示器。

7. 发明授权

US5883437A Method and apparatus for inspection and correction of wiring of electronic circuit and for manufacture thereof 失效
标题翻译：电子电路接线检查和校正方法及装置及其制造方法
公开(公告)号：US5883437A
公开(公告)日：1999-03-16
申请号：US580531
申请日：1995-12-28
申请人： Shigenobu Maruyama , Mikio Hongo , Satoru Todoroki , Masaaki Okunaka , Hideo Matsuzaki , Takanori Ninomiya , Kazushi Yoshimura , Fumikazu Ito
发明人： Shigenobu Maruyama , Mikio Hongo , Satoru Todoroki , Masaaki Okunaka , Hideo Matsuzaki , Takanori Ninomiya , Kazushi Yoshimura , Fumikazu Ito
IPC分类号： G02F1/1362 , H01L21/48 , H01L23/48 , H01L29/40 , H01L29/52
CPC分类号： G02F1/136286 , H01L21/485 , G02F2001/136254 , H01L2924/0002
摘要： A method and apparatus for inspecting wirings of an electronic circuit substrate to detect a defect in the wiring and for enabling correction thereof. The inspection method and apparatus include electrostatically coupling at least one electrode to a wiring pattern, applying a time varying voltage between the electrode and wiring pattern at different locations so as to detect a current flow and determine a defect by a variation in the detected current flow at the different locations and a portion of the defect. A defect in the form of a disconnected or half-disconnected point of the wiring may be corrected by supplying a solution of a metal complex to the disconnected or half-disconnected point, heating the solution and end point areas of the disconnected or half-disconnected point by laser light and precipitating a metal thin film establishing a connection of the wiring.
摘要翻译：一种用于检查电子电路基板的布线以检测布线中的缺陷并使其能够进行校正的方法和装置。检查方法和装置包括将至少一个电极静电耦合到布线图案，在不同位置在电极和布线图案之间施加时变电压，以便检测电流，并通过检测电流的变化来确定缺陷在不同的位置和缺陷的一部分。可以通过将金属复合物的溶液提供给断开或半断开的点来加热接头的断开或半断开点的形式的缺陷，加热解决方案和终点区域的断开或半断开通过激光点并沉淀建立连线的金属薄膜。

8. 发明授权

US07397831B2 Laser annealing apparatus and annealing method of semiconductor thin film using the same 有权
标题翻译：激光退火装置及使用其的半导体薄膜的退火方法
公开(公告)号：US07397831B2
公开(公告)日：2008-07-08
申请号：US10986936
申请日：2004-11-15
申请人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano
发明人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano
IPC分类号： H01S3/00
CPC分类号： B23K26/0738 , B23K26/0853 , G02B27/0927 , G02B27/0966 , H01L21/02678 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A laser beam temporally modulated in amplitude by a modulator and shaped into a long and narrow shape by a beam shaper is rotated around the optical axis of an image rotator inserted between the beam shaper and a substrate. Thus, the longitudinal direction of the laser beam having the long and narrow shape is rotated around the optical axis on the substrate. In order to perform annealing in a plurality of directions on the substrate, the laser beam shaped into the long and narrow shape is rotated on the substrate while a stage mounted with the substrate is moved only in two directions, that is, X- and Y-directions.In such a manner, the substrate can be scanned at a high speed with a continuous wave laser beam modulated temporally in amplitude and shaped into a long and narrow shape, without rotating the substrate. Thus, a semiconductor film can be annealed.
摘要翻译：通过调制器暂时调制振幅的激光束并通过光束整形器成形为长而窄的形状围绕插入在光束整形器和基板之间的图像旋转器的光轴旋转。因此，具有长而窄形状的激光束的纵向方向围绕基板上的光轴旋转。为了在基板上沿多个方向进行退火，将形成为长而窄的形状的激光束在基板上旋转，而安装有基板的台仅沿两个方向移动，即，X轴和Y轴方向以这样一种方式，可以用波长时间上调制并成形为长而窄的连续波激光束高速扫描基板，而不旋转基板。因此，半导体膜可以退火。

9. 发明申请

US20060003478A1 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20060003478A1
公开(公告)日：2006-01-05
申请号：US11209742
申请日：2005-08-24
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Nakoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Nakoto Ohkura
IPC分类号： H01L21/00
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.
摘要翻译：包括用于制造显示装置的布置（例如，方法），包括用准分子激光束照射形成在衬底上的非晶半导体膜，以将非晶半导体膜转换为多晶半导体膜; 并且在扫描基板相对于连续波激光束的位置时，用连续波激光束间歇地照射多晶半导体膜的预定区域，形成比除了预定区域以外的多晶半导体膜的晶粒大的晶粒在多晶半导体膜中局部的每个预定区域中，其中第一薄膜晶体管形成在预定区域中，而第二薄膜晶体管形成在除了其预定区域之外的多晶半导体膜中。

10. 发明申请

US20050169330A1 Laser annealing apparatus and annealing method of semiconductor thin film 审中-公开
标题翻译：半导体薄膜的激光退火装置和退火方法
公开(公告)号：US20050169330A1
公开(公告)日：2005-08-04
申请号：US10987003
申请日：2004-11-15
申请人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano , Takeshi Noda , Yukio Takasaki
发明人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L21/324 , B23K26/073 , C30B13/24 , C30B29/06 , H01L21/20 , H01L21/268 , H01L29/04 , H01L29/786 , H01S3/00 , H01L21/00 , H01L21/84 , H01L21/76 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02691 , B23K26/0738 , C30B13/24 , C30B29/06 , H01L21/02678 , H01L21/02683 , H01L21/2026 , H01L29/04 , H01L29/78675
摘要： When a laser bean temporally modulated in amplitude by a modulator is shaped into a long and narrow beam by a beam shaper, the scanning-direction size of the long and narrow beam shaped by the beam shaper is selected to be in a range of from 2 to 10 microns, preferably in a range of from 2 to 4 microns and the scanning speed of the beam is selected to be in a range of from 300 to 1000 mm/s, preferably in a range of from 500 to 1000 m/s. As a result, damage of the silicon thin film can be suppressed while energy utilizing efficiency of the laser beam can be improved. Accordingly, laterally grown crystals (belt-like crystals) improved in throughput can be obtained on a required region of a substrate scanned and irradiated with the laser beam.
摘要翻译：当通过调制器在振幅时间上调制的激光束通过光束整形器成形为长而窄的光束时，由光束整形器成形的长而窄的光束的扫描方向尺寸被选择在2 至10微米，优选在2至4微米的范围内，并且光束的扫描速度选择在300至1000mm / s的范围内，优选在500至1000m / s的范围内。结果，可以抑制硅薄膜的损伤，同时提高激光束的能量利用效率。因此，可以在扫描并照射激光束的基板的所需区域上获得提高生产量的横向生长的晶体（带状晶体）。

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