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1. 发明授权

US5358880A Method of manufacturing closed cavity LED 失效
标题翻译：封闭式LED的制造方法
公开(公告)号：US5358880A
公开(公告)日：1994-10-25
申请号：US44787
申请日：1993-04-12
申请人： Michael S. Lebby , Chan-Long Shieh , Craig A. Gaw
发明人： Michael S. Lebby , Chan-Long Shieh , Craig A. Gaw
IPC分类号： H01L33/00 , H01L33/40 , H01L33/42 , H01L21/265
CPC分类号： H01L33/42 , H01L33/0066 , H01L33/405 , Y10S438/977
摘要： A method of manufacturing a closed cavity LED including forming, on a substrate, a short cavity LED with electrically conductive layers on opposite ends. Depositing a transparent conductive layer of material over one electrically conductive layer and affixing glass or a diamond film over the transparent conductive layer to define and protect a light output area. Removing the substrate and covering the top and sides of the cavity with dielectric material and contact metal. The metal being in contact with the transparent conductive layer and the other electrical contact layer. Thus, a reflector covers the cavity in all directions except the light output area to increase external efficiency.
摘要翻译：一种制造封闭腔LED的方法，包括在衬底上形成在相对端上具有导电层的短腔LED。在一个导电层上沉积材料的透明导电层，并将玻璃或金刚石膜固定在透明导电层上，以限定和保护光输出区域。用介质材料和接触金属去除基板并覆盖空腔的顶部和侧面。金属与透明导电层和另一个电接触层接触。因此，除了光输出区域之外，反射器在所有方向上覆盖空腔以增加外部效率。

2. 发明授权

US5574744A Optical coupler 失效
标题翻译：光耦合器
公开(公告)号：US5574744A
公开(公告)日：1996-11-12
申请号：US383151
申请日：1995-02-03
申请人： Craig A. Gaw , Chan-Long Shieh , Michael S. Lebby
发明人： Craig A. Gaw , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01L31/10 , G02B6/12 , H01L31/12 , H01L31/173 , H01S5/00 , H01S5/026 , H01S5/183 , H01S3/18
CPC分类号： G02B6/12004 , H01L31/173 , H01S5/0264 , H01S5/18308 , H01S5/2059 , H01S5/423
摘要： A substrate having a first surface and a second surface, the first surface having a vertical cavity surface emitting laser disposed therein and second surface having a photodetector integrated disposed therein, wherein the vertical cavity surface emitting laser directs a light signal toward the photodetector.
摘要翻译：一种具有第一表面和第二表面的衬底，所述第一表面具有设置在其中的垂直腔表面发射激光器，并且具有集成在其中的光电检测器的第二表面，其中所述垂直腔表面发射激光器将光信号引导到所述光电检测器。

3. 发明授权

US5270245A Method of forming a light emitting diode 失效
标题翻译：形成发光二极管的方法
公开(公告)号：US5270245A
公开(公告)日：1993-12-14
申请号：US982525
申请日：1992-11-27
申请人： Craig A. Gaw , Chan-Long Shieh
发明人： Craig A. Gaw , Chan-Long Shieh
IPC分类号： H01L21/306 , H01L33/00 , H01L33/02 , H01L33/38 , H01L33/40 , H01L21/20 , H01L21/203
CPC分类号： H01L33/38 , H01L21/30612 , H01L33/0062 , H01L2933/0016 , H01L33/02 , H01L33/40
摘要： A method of forming a III-V semiconductor device (10, 20) utilizes a III-V semiconductor substrate (11) having a plurality of III-V semiconductor layers (12, 14, 15, 16, 17). A pattern layer ( 19, 24) is formed on the plurality of layers (12, 14, 15, 16, 17). The plurality of III-V semiconductor layers (12, 14, 15, 16, 17) is etched with an isotropic etch that does not etch the pattern layer (19, 24). The isotropic etch undercuts the pattern layer (19, 24) and exposes an area for forming ohmic contacts on the plurality of III-V semiconductor layers. The pattern layer (19, 24) is used as a mask while depositing ohmic contact material (22, 23, 28) onto the area for forming ohmic contacts.
摘要翻译：形成III-V半导体器件（10,20）的方法利用具有多个III-V半导体层（12,14,15,16,17）的III-V半导体衬底（11）。在多个层（12,14,15,16,17）上形成图形层（19,24）。通过不蚀刻图案层（19,24）的各向同性蚀刻蚀刻多个III-V半导体层（12,14,15,16,17）。各向同性蚀刻使图案层（19,24）下切，并在多个III-V半导体层上露出用于形成欧姆接触的区域。将图形层（19,24）用作掩模，同时将欧姆接触材料（22,23,28）沉积在用于形成欧姆接触的区域上。

4. 发明授权

US5757836A Vertical cavity surface emitting laser with laterally integrated photodetector 失效
标题翻译：具有横向集成光电检测器的垂直腔表面发射激光器
公开(公告)号：US5757836A
公开(公告)日：1998-05-26
申请号：US673488
申请日：1996-07-01
申请人： Wenbin Jiang , Chan-Long Shieh , Michael S. Lebby
发明人： Wenbin Jiang , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01S5/00 , H01S5/026 , H01S5/068 , H01S5/183 , H01S3/19 , H01S3/08 , H01S3/13
CPC分类号： H01S5/18308 , H01S5/0264 , H01S5/0683 , H01S5/2063
摘要： A vertical cavity surface emitting laser (VCSEL) having a first and a second mirror stack and an active region is formed utilizing epitaxial layer growth techniques. A lateral photodetector is integrally formed in the epitaxial growth layers, thereby providing for a VCSEL with laterally integrated photodetector. An isolation region is formed in the epitaxial growth layers between the VCSEL and the photodetector thereby isolating the VCSEL and the lateral photodetector. The integrated VCSEL and lateral photodetector capable of monitoring reflected laser emission, thus laser power output of the VCSEL and employing feedback to maintain a specific laser power output level, thereby capable of automatic power control (APC).
摘要翻译：使用外延层生长技术形成具有第一和第二反射镜叠层和有源区域的垂直腔表面发射激光器（VCSEL）。横向光电探测器整体地形成在外延生长层中，从而为具有横向集成光电检测器的VCSEL提供。在VCSEL和光电检测器之间的外延生长层中形成隔离区，从而隔离VCSEL和横向光电检测器。集成VCSEL和横向光电检测器能够监测反射激光发射，从而激光功率输出VCSEL，并采用反馈来维持特定的激光功率输出电平，从而能够进行自动功率控制（APC）。

5. 发明授权

US5742630A VCSEL with integrated pin diode 失效
标题翻译：具有集成PIN二极管的VCSEL
公开(公告)号：US5742630A
公开(公告)日：1998-04-21
申请号：US672731
申请日：1996-07-01
申请人： Wenbin Jiang , Chan-Long Shieh , Michael S. Lebby
发明人： Wenbin Jiang , Chan-Long Shieh , Michael S. Lebby
IPC分类号： H01S5/026 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18308 , H01S2301/176 , H01S5/0264 , H01S5/2059
摘要： A VCSEL (113) having first and second stacks of DBRs (120, 116) and an active region sandwiched therebetween (118) is formed. A PIN photo-detector is integrated onto the VCSEL by positioning it on the second stack in the light path. The PIN photo detector includes a first doped region (104), a second undoped (intrinsic) region (106), and a third doped region (108). A first conductive layer (134) is provided in contact with the second stack and the first region and a second conductive layer is provided in contact with the third region.
摘要翻译：形成具有第一和第二堆叠DBR（120,116）和夹在其间的有源区（118）的VCSEL（113）。 PIN光检测器通过将其定位在光路中的第二堆叠上而被集成到VCSEL上。 PIN光电检测器包括第一掺杂区域（104），第二未掺杂（本征）区域（106）和第三掺杂区域（108）。提供与第二堆叠接触的第一导电层（134）和第一区域以及第二导电层与第三区域接触。

6. 发明授权

US5482891A VCSEL with an intergrated heat sink and method of making 失效
标题翻译：具有集成散热器的VCSEL和制造方法
公开(公告)号：US5482891A
公开(公告)日：1996-01-09
申请号：US407062
申请日：1995-03-17
申请人： Chan-Long Shieh , John Lungo , Michael S. Lebby
发明人： Chan-Long Shieh , John Lungo , Michael S. Lebby
IPC分类号： H01S5/024 , H01S5/183 , H01L21/20
CPC分类号： H01S5/18344 , H01S2301/176 , H01S5/02476 , Y10S148/095
摘要： A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact region (111) is provided. A mesa (131) with a surface (133) and a trench (136) is formed. A first dielectric layer (122) is formed overlying substrate (102) and covering a portion of trench (136). A seed layer (126) having a pattern is formed, with the pattern of seed layer (126) having an opening on a portion of mesa (131). A metal is selectively plated on seed layer (126), thereby generating a layer (304) on seed layer (126) for removal of heat of VCSEL (101).
摘要翻译：具有表面（103）的基板（102）具有分布布拉格反射器（106）的第一叠层，第一包层区域（107），有源区域（108），第二包层区域（109）分布式布拉格反射器（110）和接触区域（111）。形成具有表面（133）和沟槽（136）的台面（131）。覆盖衬底（102）并覆盖沟槽（136）的一部分的第一介电层（122）形成。形成具有图案的种子层（126），种子层（126）的图案在台面（131）的一部分上具有开口。金属被选择性地电镀在种子层（126）上，由此在种子层（126）上产生用于去除VCSEL（101）的热量的层（304）。

7. 发明授权

US5530715A Vertical cavity surface emitting laser having continuous grading 失效
标题翻译：具有连续分级的垂直腔表面发射激光
公开(公告)号：US5530715A
公开(公告)日：1996-06-25
申请号：US346559
申请日：1994-11-29
申请人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/00 , H01S5/183 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3054 , H01S5/3215 , H01S5/34313
摘要： A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region. A second stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing concentrations of aluminum are disposed on the second cladding region with a second plurality of continuous gradient layers being positioned between the alternating layers of differing aluminum concentrations to dynamically change the aluminum concentration from one of the altering layers to another alternating layers.
摘要翻译：具有不同于铝浓度的铝砷化镓的交替层的分布布拉格反射镜的第一堆叠被布置在基板的表面上，其中第一多个连续梯度层位于不同铝浓度的交替层之间以动态地移动铝从交替层之一到另一个交替层的浓度。第一包层区域布置在分布布拉格反射镜的第一堆叠上。有源区设置在第一包层区上，第二包层区设置在有源区上。具有不同浓度的铝的交替铝砷化镓层的第二层布拉格反射镜布置在第二覆层区域上，第二多个连续梯度层位于不同铝浓度的交替层之间以动态地将铝浓度从另一个交替层的改变层之一。

8. 发明授权

US5446752A VCSEL with current blocking layer offset 失效
标题翻译： VCSEL具有当前阻塞层偏移
公开(公告)号：US5446752A
公开(公告)日：1995-08-29
申请号：US271534
申请日：1994-07-07
申请人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Donald E. Ackley , Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/02 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18308 , H01S5/0207 , H01S5/18327 , H01S5/1833 , H01S5/18358 , H01S5/2063 , H01S5/2222
摘要： A top-emitting vertical cavity surface emitting laser with a current blocking layer at the substrate and offset layers in the mirror stack providing an optical waveguide aligned to the injected current distribution.
摘要翻译：在衬底上具有电流阻挡层的顶发射垂直腔表面发射激光器和反射镜堆叠中的偏移层，提供与注入的电流分布对准的光波导。

9. 发明授权

US5422901A Semiconductor device with high heat conductivity 失效
标题翻译：具有高导热性的半导体器件
公开(公告)号：US5422901A
公开(公告)日：1995-06-06
申请号：US151634
申请日：1993-11-15
申请人： Michael S. Lebby , Chan-Long Shieh , Ken Davis
发明人： Michael S. Lebby , Chan-Long Shieh , Ken Davis
IPC分类号： H01S5/00 , H01L23/373 , H01L23/532 , H01S5/024 , H01S5/042 , H01S5/183 , H01S3/085 , H01S3/19
CPC分类号： H01L23/5329 , H01L23/3732 , H01S5/183 , H01L2924/0002 , H01S2301/176 , H01S5/02484 , H01S5/0282 , H01S5/0422 , Y10S148/095
摘要： A VCSEL having a first mirror stack positioned on the surface of a substrate, an active region positioned on the first mirror stack and substantially coextensive therewith, and a second mirror stack positioned on the active region, the second mirror stack forming a ridge or mesa having a side surface. A metal contact layer is positioned on the side surface of the ridge or mesa and on portions of an end of the ridge or mesa to define a light emitting area, and a layer of diamond-like material is electrolytically plated on the metal contact layer so as to form a heat conductor to remove heat from the laser.
摘要翻译：具有位于基板表面上的第一反射镜叠层的VCSEL，位于第一反射镜叠层上并与其基本共同延伸的有源区域和位于有源区域上的第二反射镜叠层，第二反射镜叠层形成具有脊或台面的脊或台面，侧面。金属接触层位于脊或台面的侧表面上以及在脊或台面的一端的部分上以限定发光区域，并且将类金刚石材料电镀在金属接触层上，因此以形成热导体以从激光器去除热量。

10. 发明授权

US5359618A High efficiency VCSEL and method of fabrication 失效
标题翻译：高效VCSEL和制造方法
公开(公告)号：US5359618A
公开(公告)日：1994-10-25
申请号：US69812
申请日：1993-06-01
申请人： Michael S. Lebby , Chan-Long Shieh , Hsing-Chung Lee
发明人： Michael S. Lebby , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01S5/00 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18313 , H01S5/18316 , H01S5/3215 , Y10S438/911
摘要： A high efficiency vertical cavity surface emitting laser with first and second mirror stacks and an active area sandwiched therebetween. The second mirror stack is formed into a mesa with exposed end surface and outer sidewalls and a centrally located light emission region. A portion of the mesa adjacent the exposed outer sidewalls has a reduced electrical conductance so as to spread operating current from the outer sidewalls into the centrally located light emission region. The electrical conductance of the portion is reduced by oxidizing or etching the outer sidewalls.
摘要翻译：具有第一和第二反射镜叠层的高效率垂直腔表面发射激光器和夹在其间的有源区域。第二反射镜叠层形成为具有暴露的端表面和外侧壁和位于中心的发光区域的台面。邻近暴露的外侧壁的台面的一部分具有降低的电导，从而将工作电流从外侧壁扩展到中心定位的发光区域。通过氧化或蚀刻外侧壁来减小该部分的导电性。

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