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    • 1. 发明授权
    • VCSEL having a self-aligned heat sink and method of making
    • VCSEL具有自对准散热器和制造方法
    • US5654228A
    • 1997-08-05
    • US407061
    • 1995-03-17
    • Chan-Long ShiehJohn LungoMichael S. Lebby
    • Chan-Long ShiehJohn LungoMichael S. Lebby
    • H01S5/024H01S5/042H01S5/183H01L21/20
    • H01S5/18344H01S5/0425H01S2301/176H01S5/02476H01S5/2081
    • A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact region (111) is provided. A mesa (131) with a surface (133) and a trench (136) is formed. A first dielectric layer (122) is formed overlying substrate (102) and covering a portion of trench (136). A second dielectric layer (128) is formed on surface (133) of mesa (131). A seed layer (126) having a pattern is formed, with the pattern of seed layer (126) having an opening on a portion of second dielectric layer (128) of mesa (131). A metal is selectively plated on seed layer (126), thereby generating a layer (204) on seed layer (126) for removal of heat from VCSEL (101).
    • 具有表面(103)的基板(102)具有分布布拉格反射器(106)的第一叠层,第一包层区域(107),有源区域(108),第二包层区域(109) 分布式布拉格反射器(110)和接触区域(111)。 形成具有表面(133)和沟槽(136)的台面(131)。 覆盖衬底(102)并覆盖沟槽(136)的一部分的第一介电层(122)形成。 在台面(131)的表面(133)上形成第二电介质层(128)。 形成具有图案的种子层(126),种子层(126)的图案在台面(131)的第二介电层(128)的一部分上具有开口。 金属被选择性地电镀在种子层(126)上,从而在种子层(126)上产生用于从VCSEL(101)去除热量的层(204)。
    • 2. 发明授权
    • VCSEL with an intergrated heat sink and method of making
    • 具有集成散热器的VCSEL和制造方法
    • US5482891A
    • 1996-01-09
    • US407062
    • 1995-03-17
    • Chan-Long ShiehJohn LungoMichael S. Lebby
    • Chan-Long ShiehJohn LungoMichael S. Lebby
    • H01S5/024H01S5/183H01L21/20
    • H01S5/18344H01S2301/176H01S5/02476Y10S148/095
    • A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact region (111) is provided. A mesa (131) with a surface (133) and a trench (136) is formed. A first dielectric layer (122) is formed overlying substrate (102) and covering a portion of trench (136). A seed layer (126) having a pattern is formed, with the pattern of seed layer (126) having an opening on a portion of mesa (131). A metal is selectively plated on seed layer (126), thereby generating a layer (304) on seed layer (126) for removal of heat of VCSEL (101).
    • 具有表面(103)的基板(102)具有分布布拉格反射器(106)的第一叠层,第一包层区域(107),有源区域(108),第二包层区域(109) 分布式布拉格反射器(110)和接触区域(111)。 形成具有表面(133)和沟槽(136)的台面(131)。 覆盖衬底(102)并覆盖沟槽(136)的一部分的第一介电层(122)形成。 形成具有图案的种子层(126),种子层(126)的图案在台面(131)的一部分上具有开口。 金属被选择性地电镀在种子层(126)上,由此在种子层(126)上产生用于去除VCSEL(101)的热量的层(304)。
    • 3. 发明授权
    • Method of making a VCSEL
    • 制造VCSEL的方法
    • US5468656A
    • 1995-11-21
    • US346558
    • 1994-11-29
    • Chan-Long ShiehMichael S. LebbyJohn Lungo
    • Chan-Long ShiehMichael S. LebbyJohn Lungo
    • H01S5/00H01S5/042H01S5/183H01S5/20H01L21/265
    • H01S5/18308H01S5/0422H01S5/2063H01S5/2081
    • A substrate with a surface, the surface having disposed thereon a first stack of distributed Bragg reflectors, an active area, a second stack of distributed Bragg reflectors, a contact region, and a dielectric layer is provided. A first isolation trench is formed that extends through the dielectric layer, the contact region, and into a portion of the second stack of distributed Bragg reflectors. A dielectric layer is disposed on the substrate. A second isolation trench is formed through the nitride layer, the contact region, the second stack of distributed Bragg reflectors, the active region and a portion of the first stack of distributed Bragg reflectors, wherein the second isolation trench encircles the first isolation trench. A first electrical contact is formed on the second stack of distributed Bragg reflectors and a second electrical contact is formed on the contact region.
    • 具有表面的基板,其表面设置有分布式布拉格反射器的第一叠层,有源区,分布布拉格反射器的第二叠层,接触区和电介质层。 形成第一隔离沟槽,其延伸穿过电介质层,接触区域,并进入分布式布拉格反射器的第二层叠体的一部分。 电介质层设置在基板上。 通过氮化物层,接触区域,分布布拉格反射器的第二堆叠,有源区域和分布布拉格反射器的第一叠层的一部分形成第二隔离沟槽,其中第二隔离沟槽环绕第一隔离沟槽。 分布式布拉格反射器的第二堆叠上形成第一电接触,并且在接触区域上形成第二电接触。
    • 10. 发明授权
    • Vertical cavity surface emitting laser having continuous grading
    • 具有连续分级的垂直腔表面发射激光
    • US5530715A
    • 1996-06-25
    • US346559
    • 1994-11-29
    • Chan-Long ShiehMichael S. LebbyHsing-Chung LeePiotr Grodzinski
    • Chan-Long ShiehMichael S. LebbyHsing-Chung LeePiotr Grodzinski
    • H01S5/00H01S5/183H01S3/08
    • H01S5/183B82Y20/00H01S5/3054H01S5/3215H01S5/34313
    • A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region. A second stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing concentrations of aluminum are disposed on the second cladding region with a second plurality of continuous gradient layers being positioned between the alternating layers of differing aluminum concentrations to dynamically change the aluminum concentration from one of the altering layers to another alternating layers.
    • 具有不同于铝浓度的铝砷化镓的交替层的分布布拉格反射镜的第一堆叠被布置在基板的表面上,其中第一多个连续梯度层位于不同铝浓度的交替层之间以动态地移动铝 从交替层之一到另一个交替层的浓度。 第一包层区域布置在分布布拉格反射镜的第一堆叠上。 有源区设置在第一包层区上,第二包层区设置在有源区上。 具有不同浓度的铝的交替铝砷化镓层的第二层布拉格反射镜布置在第二覆层区域上,第二多个连续梯度层位于不同铝浓度的交替层之间以动态地将铝浓度从 另一个交替层的改变层之一。