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1. 发明公开

US20240258767A1 LASER ELEMENT AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20240258767A1
公开(公告)日：2024-08-01
申请号：US18559511
申请日：2021-05-26
申请人： SONY GROUP CORPORATION
发明人： GEN YONEZAWA , TOSHIYA TAKAGISHI , MISAKI SHIMIZU
IPC分类号： H01S5/024 , H01S3/0941 , H01S3/10 , H01S3/113 , H01S3/16 , H01S5/02345 , H01S5/183 , H01S5/343
CPC分类号： H01S5/02484 , H01S3/09415 , H01S3/10061 , H01S3/113 , H01S3/1618 , H01S3/1643 , H01S5/02345 , H01S5/02407 , H01S5/18305 , H01S5/34313
摘要： To prevent a decrease in oscillation efficiency of laser light and a decrease in conversion efficiency of an optical wavelength due to thermal interference. A laser element includes: a laminated semiconductor layer including a first reflection layer with respect to a first wavelength and an active layer that performs surface emission at the first wavelength; a laser medium disposed on a rear side of an optical axis of the laminated semiconductor layer and including a second reflection layer with respect to a second wavelength on a first surface facing the laminated semiconductor layer and a third reflection layer with respect to the first wavelength on a second surface on a side opposite to the first surface; a fourth reflection layer with respect to the second wavelength disposed on the second surface or disposed on a rear side of the optical axis with respect to the second surface; a first resonator that causes light of the first wavelength to resonate between the first reflection layer and the third reflection layer; a second resonator that causes light of the second wavelength to resonate between the second reflection layer and the fourth reflection layer; and a heat exhaust unit that is disposed between the laminated semiconductor layer and the laser medium and exhausts heat generated in at least one of the laminated semiconductor layer or the laser medium.

2. 发明申请

US20190003679A1 COMPACT HIGH-SPECTRAL-RADIANCE FLUORESCENT LIGHT SOURCE INCLUDING A PARABOLIC MIRROR 审中-公开
公开(公告)号：US20190003679A1
公开(公告)日：2019-01-03
申请号：US16102007
申请日：2018-08-13
申请人： Optomak, Inc.
发明人： Guy Rousseau , Sead Doric
IPC分类号： F21V7/06 , H01S5/40 , H01S5/024 , F21V29/76 , F21V5/04 , F21K9/64 , F21V9/08 , F21Y115/30
CPC分类号： F21V7/06 , F21K9/64 , F21V5/04 , F21V9/08 , F21V29/76 , F21Y2115/30 , H01S5/02288 , H01S5/02292 , H01S5/02415 , H01S5/02438 , H01S5/02484 , H01S5/4012
摘要： A pumped fluorescent light source includes a parabolic mirror that is positioned to focus pumping light from one or more pump sources on a fluorescent body. The resulting assembly provides for heat collection from a back surface of the light source for both the fluorescent body and the pumping sources in a compact package that may be hermetically sealed. The parabolic mirror has reflective surfaces disposed outside of a collection area of an output beam of the light sources, so that the collection area is not obstructed by the parabolic mirror. The light source also includes a collecting lens for collecting the light emitted by the body. The parabolic mirror focuses the stimulus light on the fluorescent body to stimulate emission. An additional parabolic mirror may be included behind the fluorescent body to focus the fluorescent emissions that do not directly enter the collection area at a point of collection.

3. 发明授权

US09787055B2 Semiconductor strip laser and semiconductor component 有权
公开(公告)号：US09787055B2
公开(公告)日：2017-10-10
申请号：US15119546
申请日：2015-03-23
申请人： OSRAM Opto Semiconductors GmbH
发明人： Jens Müller , Alfred Lell , Uwe Strauβ
IPC分类号： H01S5/024 , H01S5/022 , H01S5/042 , H01S5/323 , H01S5/16 , H01S5/22
CPC分类号： H01S5/02476 , H01S5/0224 , H01S5/02469 , H01S5/02484 , H01S5/0425 , H01S5/168 , H01S5/2214 , H01S5/222 , H01S5/2226 , H01S5/32341 , H01S2301/176
摘要： A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.

4. 发明授权

US09620932B2 Self mode-locking semiconductor disk laser 有权
公开(公告)号：US09620932B2
公开(公告)日：2017-04-11
申请号：US14389212
申请日：2013-03-27
申请人： SOLUS TECHNOLOGIES LIMITED
发明人： Craig James Hamilton , Graeme Peter Alexander Malcolm , Lukasz Kornaszewski
IPC分类号： H01S5/22 , H01S3/11 , H01S3/08 , H01S3/081 , H01S3/094 , H01S5/024 , H01S5/04 , H01S5/065 , H01S5/14 , H01S5/183
CPC分类号： H01S5/2228 , H01S3/0805 , H01S3/0813 , H01S3/0816 , H01S3/094053 , H01S3/1112 , H01S5/02484 , H01S5/041 , H01S5/065 , H01S5/0657 , H01S5/141 , H01S5/183
摘要： The present invention describes a self mode locking laser and a method for self mode locking a laser. The laser (1) comprises a resonator terminated by first (3) and second (4) mirrors and folded by a third mirror (5). The third mirror comprises a single distributed Bragg reflector (17) upon which is mounted a multilayer semiconductor gain medium (18) and which includes at least one quantum well layer and an optical Kerr lensing layer (22). Self mode locking may be achieved by configuring the laser resonator such that the lensing effect of the Kerr lensing layer acts to reduce an astigmatism deliberately introduced to the cavity mode. The self mode locking of the laser may be further enhanced by selecting the length of the resonator such that a round trip time of a cavity mode is matched with an upper-state lifetime of one or more semiconductor carriers located within the gain medium.

5. 发明申请

US20170054271A1 Semiconductor Strip Laser and Semiconductor Component 有权
标题翻译：半导体条激光器和半导体元件
公开(公告)号：US20170054271A1
公开(公告)日：2017-02-23
申请号：US15119546
申请日：2015-03-23
申请人： OSRAM Opto Semiconductors GmbH
发明人： Jens Müller , Alfred Lell , Uwe Strauß
IPC分类号： H01S5/024 , H01S5/22
CPC分类号： H01S5/02476 , H01S5/0224 , H01S5/02469 , H01S5/02484 , H01S5/0425 , H01S5/168 , H01S5/2214 , H01S5/222 , H01S5/2226 , H01S5/32341 , H01S2301/176
摘要： A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.
摘要翻译：公开了半导体条激光器和半导体部件。在实施例中，激光器包括半导体主体的第一导电类型的第一半导体区域，半导体主体的第二不同导电类型的第二半导体区域，半导体主体的至少一个有源区域被配置为在第二半导体区域之间产生激光辐射第一和第二半导体区域。激光器还包括至少在第二半导体区域中形成的带状波导，并且在运行期间沿着在有源区域中产生的激光辐射的波导方向提供一维波导，在第一半导体区域上的第一电接触，在第二半导体区域上的第二电接触和至少一个尺寸稳定地连接到半导体本体的散热器，至少达到220℃的温度，并且具有至少50W / m·K的平均热导率。

6. 发明申请

US20170047707A1 OPTICAL AMPLIFIER 有权
标题翻译：光放大器
公开(公告)号：US20170047707A1
公开(公告)日：2017-02-16
申请号：US15306820
申请日：2015-04-28
申请人： SOLUS TECHNOLOGIES LIMITED
发明人： Craig James HAMILTON , Graeme Peter Alexander MALCOLM
IPC分类号： H01S5/04 , H01S5/024 , H01S5/187 , H01S5/183 , H01S5/50 , H01S5/34
CPC分类号： H01S5/041 , H01S5/02484 , H01S5/183 , H01S5/18361 , H01S5/187 , H01S5/34 , H01S5/50
摘要： An optical amplifier is described. The optical amplifier (1) comprises a semiconductor disk gain medium (2) including at least one quantum well layer (9) and a pump field source (17) for generating an optical pump field (3) for the semiconductor disk gain medium. The optical amplifier acts to generate an output optical field (5) from an input optical field (4) received by the optical amplifier and arranged to be incident upon the semiconductor disk gain medium. Employing a semiconductor disk gain medium within the optical amplifier allows it to be optically pumped and thus provided for increased stability and beam quality of the output optical field while allowing for the design of optical amplifiers which can operate across a broad range of wavelengths. The optical amplifier may be employed with continuous wave or pulsed input optical fields.
摘要翻译：描述了光放大器。光放大器（1）包括半导体盘增益介质（2），其包括用于产生用于半导体盘增益介质的光泵场（3）的至少一个量子阱层（9）和泵浦场源（17）。光放大器用于从由光放大器接收的输入光场（4）产生输出光场（5），并布置成入射到半导体盘增益介质上。在光放大器内使用半导体盘增益介质允许其被光学泵浦，并且因此提供用于提高输出光场的稳定性和光束质量，同时允许设计可在宽范围波长范围内工作的光放大器。光放大器可以采用连续波或脉冲输入光场。

7. 发明授权

US09001855B1 Methods and systems for reducing slow axis divergence in laser diodes 有权
标题翻译：减少激光二极管慢轴发散的方法和系统
公开(公告)号：US09001855B1
公开(公告)日：2015-04-07
申请号：US13912839
申请日：2013-06-07
申请人： Jonah H. Jacob , Henry M. Eppich , Geoffrey O. Campbell , Wenyang Sun
发明人： Jonah H. Jacob , Henry M. Eppich , Geoffrey O. Campbell , Wenyang Sun
IPC分类号： H01S3/04 , H01S5/024
CPC分类号： H01S5/4025 , H01S5/0014 , H01S5/02423 , H01S5/02484
摘要： A method, and systems to implement the method, for reducing slow axis divergence in a laser diode bar including tailoring a power deposition profile across the emitter so as to reduce thermal gradients, thereby resulting in a substantially (nearly) uniform temperature across the width of the emitter.
摘要翻译：一种用于实现该方法的方法和系统，用于减少激光二极管条中的慢轴发散，包括跨越发射极定制功率沉积分布，从而降低热梯度，从而导致跨越宽度的发射器。

8. 发明授权

US08867584B2 Intra-cavity optical parametric oscillator 有权
标题翻译：腔内光学参量振荡器
公开(公告)号：US08867584B2
公开(公告)日：2014-10-21
申请号：US13264601
申请日：2010-04-13
申请人： Malcolm H. Dunn , David Stothard
发明人： Malcolm H. Dunn , David Stothard
IPC分类号： H01S3/08 , H01S3/082 , H01S3/108 , H01S5/14 , H01S3/106 , H01S5/04 , H01S5/06 , G02F1/39 , H01S3/094 , H01S3/0941 , H01S3/16 , H01S5/024 , H01S5/183 , H01S3/081
CPC分类号： H01S5/142 , G02F2001/392 , H01S3/08027 , H01S3/08054 , H01S3/0815 , H01S3/0823 , H01S3/094053 , H01S3/09415 , H01S3/1062 , H01S3/1083 , H01S3/1611 , H01S3/1673 , H01S5/02484 , H01S5/041 , H01S5/0604 , H01S5/183
摘要： An optical parametric oscillator comprising: an optical cavity; a semiconductor gain-medium located within the optical cavity, such that together they form a semiconductor laser, and a nonlinear material located within the cavity such that the nonlinear material continuously generates down-converted idler- and signal-waves in response to a pump-wave continuously generated by the semiconductor gain-medium, wherein the pump wave is resonant within the optical cavity and one or other but not both of the down-converted waves is resonant within the pump wave cavity or a further optical cavity. Brewster plates ensure singly resonant optical parametric oscillators and a birefringent filer is used for frequency setting. Coupled cavities allow for setting the photon lifetime in the cavity that relaxation oscillations are prevented.
摘要翻译：一种光学参量振荡器，包括：光腔; 位于光腔内的半导体增益介质，使得它们一起形成半导体激光器，以及位于空腔内的非线性材料，使得非线性材料响应于泵浦的方式连续地产生下变频惰轮和信号波，其中所述泵浦波在所述光学腔内谐振，并且所述下变换波中的一个或其它但不是两个都在所述泵波腔内或另外的光学腔中共振。布鲁斯特板确保单谐振光学参量振荡器，双折射滤波器用于频率设置。耦合的腔允许在腔中设置光子寿命，防止松弛振荡。

9. 发明申请

US20140151013A1 METHOD FOR FORMING A COMPOSITE MATERIAL, AND HEAT SINK 有权
标题翻译：形成复合材料和热沉的方法
公开(公告)号：US20140151013A1
公开(公告)日：2014-06-05
申请号：US14233488
申请日：2012-07-11
申请人： Klaus Wallmeroth , Christian Schmitz
发明人： Klaus Wallmeroth , Christian Schmitz
IPC分类号： F28F21/02 , F28F21/08 , B22F7/02
CPC分类号： F28F21/02 , B22F7/02 , F28F21/08 , H01L23/373 , H01L23/3732 , H01L23/3733 , H01L23/3735 , H01L2924/0002 , H01S5/02484 , H01L2924/00
摘要： A method for forming a carbon-metal composite material for a heat sink, comprising the following steps: applying at least one layer comprising carbon particles and at least one layer comprising metal particles on top of one another; and fusing of the layers by irradiating the layers with laser radiation to form the carbon-metal composite material. The invention also relates to a heat sink having a shaped body that comprises a plurality of layers, each layer containing carbon particles in a metal matrix.
摘要翻译：一种形成用于散热片的碳 - 金属复合材料的方法，包括以下步骤：将至少一层包含碳颗粒和至少一层包含金属颗粒的层彼此顶部涂覆; 以及通过用激光辐射照射层来形成所述层，以形成所述碳 - 金属复合材料。本发明还涉及具有成形体的散热器，该成形体包括多个层，每个层在金属基质中含有碳颗粒。

10. 发明授权

US08649405B2 Heat transfer device with at least one semiconductor element, particularly a laser or light-emitting diode element, and method for the assembly thereof 有权
标题翻译：具有至少一个半导体元件，特别是激光或发光二极管元件的传热装置及其组装方法
公开(公告)号：US08649405B2
公开(公告)日：2014-02-11
申请号：US12995999
申请日：2009-06-02
申请人： Matthias Schröder , Dirk Lorenzen
发明人： Matthias Schröder , Dirk Lorenzen
IPC分类号： H01S3/04
CPC分类号： H01S5/024 , H01S5/02264 , H01S5/02272 , H01S5/02484 , H01S5/4025
摘要： A semiconductor component on mutually opposing sides is joined in a first and a second bonded connection with a heat conducting body each. The heat-conducting bodies are joined in a third bonded connection in the region of the sections thereof extending away from the semiconductor element. A spacer, which with regard to the third connection, is disposed on the opposite side of the semiconductor component between the heat-conducting bodies, in conjunction with the joining zone thickness of the third connection being greater than that of the first or the second joining zone to ensure that defined joining zone thicknesses in the bonded connection is maintained during the joining process. The third connection can be used for at least partial heat transfer of the waste heat of the semiconductor component, particularly to a heat sink that is connected to the heat transfer device.
摘要翻译：在相互相对的侧面上的半导体部件与导热体分别连接在第一和第二接合连接中。导热体在其远离半导体元件的部分的区域中以第三接合连接接合。相对于第三连接件的间隔件设置在导热体之间的半导体部件的相反侧，结合第三连接件的接合区域厚度大于第一或第二接合的接合区域厚度以确保在接合过程中保持接合连接中限定的接合区厚度。第三连接可以用于半导体部件的废热的至少部分热传递，特别是用于连接到传热装置的散热器。

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