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1. 发明授权

US5284549A Selective fluorocarbon-based RIE process utilizing a nitrogen additive 失效
标题翻译：选择性碳氟化合物的RIE工艺利用氮添加剂
公开(公告)号：US5284549A
公开(公告)日：1994-02-08
申请号：US816190
申请日：1992-01-02
申请人： Michael S. Barnes , Melanie M. Chow , John C. Forster , Michael A. Fury , Chang-Ching Kin , Harris C. Jones , John H. Keller , James A. O'Neill
发明人： Michael S. Barnes , Melanie M. Chow , John C. Forster , Michael A. Fury , Chang-Ching Kin , Harris C. Jones , John H. Keller , James A. O'Neill
IPC分类号： C03C15/00 , H01L21/311 , H01L21/00
CPC分类号： C03C15/00 , H01L21/31116 , Y10S438/97
摘要： A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.
摘要翻译：使用氮添加剂公开了基于CHF 3的RIE蚀刻工艺，以提供SiO 2或PSG对Al 2 O 3的高选择性，光刻胶掩模的低倒角和低RIE滞后。该方法使用约200-1,000mTorr范围内的压力和基于被蚀刻的基底的尺寸选择的适当的RF偏置功率。衬底安装基座优选保持在约0℃的温度。氮可以由含氮分子或N 2提供。可以将气体加入到气体混合物中，以提高氮气的RIE滞后效应。

2. 发明授权

US5433258A Gettering of particles during plasma processing 失效
标题翻译：在等离子体处理期间吸收颗粒
公开(公告)号：US5433258A
公开(公告)日：1995-07-18
申请号：US191894
申请日：1994-02-04
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
IPC分类号： C23C14/00 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/30 , C23C14/34 , C23C16/50 , H05H1/00
CPC分类号： H01J37/32431 , H01J2237/022 , H01J2237/028
摘要： Apparatus and methods for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.
摘要翻译：公开了用于等离子体处理的装置和方法，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

3. 发明授权

US5332441A Apparatus for gettering of particles during plasma processing 失效
标题翻译：用于在等离子体处理期间吸除颗粒的装置
公开(公告)号：US5332441A
公开(公告)日：1994-07-26
申请号：US785628
申请日：1991-10-31
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
IPC分类号： C23C14/00 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00 , B05C5/00
CPC分类号： H01J37/32431 , H01J2237/022 , H01J2237/028
摘要： Apparatus for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.
摘要翻译：公开了一种用于等离子体处理的装置，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

4. 发明授权

US5518547A Method and apparatus for reducing particulates in a plasma tool through steady state flows 失效
标题翻译：用于通过稳态流减少等离子体工具中的微粒的方法和装置
公开(公告)号：US5518547A
公开(公告)日：1996-05-21
申请号：US178386
申请日：1993-12-23
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , Thomas Wicker
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , Thomas Wicker
IPC分类号： C23C16/44 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32871 , C23C16/4401
摘要： A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.
摘要翻译：用于使用稳态流减少等离子体工具中的微粒的方法和装置包括可操作地耦合到壳体的装置，其中待处理对象被定位在其中，用于产生邻近物体朝向泵送孔径的等离子体流。泵送机构泵送邻近物体的介质。介质支持等离子体，并将离子束中的等离子体中的微粒夹带在泵送孔径之外。由形成环尖的多极磁体产生的磁场优选用于产生径向远离待处理物体的等离子体流。在第二实施例中，提供形成线尖端的磁体阵列以产生等离子体将流过的开口。

5. 发明授权

US5178739A Apparatus for depositing material into high aspect ratio holes 失效
标题翻译：用于将材料沉积到高纵横比孔中的装置
公开(公告)号：US5178739A
公开(公告)日：1993-01-12
申请号：US765651
申请日：1991-09-25
申请人： Michael S. Barnes , John C. Forster , John H. Keller
发明人： Michael S. Barnes , John C. Forster , John H. Keller
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： C23C14/345 , C23C14/35 , C23C14/358 , H01J37/3405 , H01J37/342 , H01J37/3438 , H01J37/3452
摘要： A sputter deposition system includes a hollow, cylindrical sputter target 14 disposed between an end sputter target 12 and a substrate 19, all of which are contained in a vacuum chamber 20. A plurality of magnets 24 are disposed outside the chamber 24 to create intense, plasma regions 48 near the interior surface of the cylindrical target 14 and thereby causing ionization of sputtered neutrals. Rf power is inductively coupled into the chamber 24 through rf coil 16 to sustain the plasma and substrate 19 is electrically biased to control ion directionality and energy.
摘要翻译：溅射沉积系统包括设置在端溅射靶12和衬底19之间的中空圆柱形溅射靶14，所有这些都被包含在真空室20中。多个磁体24设置在腔室24的外部，等离子体区域48在圆筒形目标14的内表面附近，从而引起溅射的中性粒子的电离。 Rf功率通过rf线圈16感应耦合到腔室24中以维持等离子体，并且电子偏置基板19以控制离子方向性和能量。

6. 发明授权

US5543184A Method of reducing particulates in a plasma tool through steady state flows 失效
标题翻译：通过稳态流减少等离子体工具中的微粒的方法
公开(公告)号：US5543184A
公开(公告)日：1996-08-06
申请号：US450120
申请日：1995-05-25
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , Thomas Wicker
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , Thomas Wicker
IPC分类号： C23C16/44 , H01J37/32 , H05H1/02
CPC分类号： H01J37/32871 , C23C16/4401
摘要： A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.
摘要翻译：用于使用稳态流减少等离子体工具中的微粒的方法和装置包括可操作地耦合到壳体的装置，其中待处理对象被定位在其中，用于产生邻近物体朝向泵送孔径的等离子体流。泵送机构泵送邻近物体的介质。介质支持等离子体，并将离子束中的等离子体中的微粒夹带在泵送孔径之外。由形成环尖的多极磁体产生的磁场优选用于产生径向远离待处理物体的等离子体流。在第二实施例中，提供形成线尖端的磁体阵列以产生等离子体将流过的开口。

7. 发明授权

US5207437A Ceramic electrostatic wafer chuck 失效
标题翻译：陶瓷静电晶片卡盘
公开(公告)号：US5207437A
公开(公告)日：1993-05-04
申请号：US784291
申请日：1991-10-29
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： B23Q3/15 , H01L21/6831 , Y10T279/23
摘要： An electrostatic chuck for semiconductor wafers comprised of a multilayered ceramic, including a back-side-metal layer pattern adjacent the upper wafer receiving surface for generating an electrostatic force. Intermediate via layers connect the pattern to a back-side-metal layer at the bottom of the chuck to which power leads can be connected. A number of small passages, extending from the bottom of the chuck to its upper surface, allow helium heat transfer without the need for surface grooves.
摘要翻译：一种用于半导体晶片的静电卡盘，包括多层陶瓷，其包括邻近上晶片接收表面的背侧金属层图案，用于产生静电力。中间通孔层将图案连接到可连接电源线的卡盘底部的背侧金属层。从卡盘的底部延伸到其上表面的许多小通道允许氦热传递而不需要表面凹槽。

8. 发明授权

US5189446A Plasma wafer processing tool having closed electron cyclotron resonance 失效
标题翻译：具有闭合电子回旋共振的等离子体晶片加工工具
公开(公告)号：US5189446A
公开(公告)日：1993-02-23
申请号：US702654
申请日：1991-05-17
申请人： Michael S. Barnes , John C. Forster , John H. Keller
发明人： Michael S. Barnes , John C. Forster , John H. Keller
IPC分类号： H01J37/32
CPC分类号： H01J37/32192 , H01J37/32678
摘要： A cylindrical plasma reaction chamber is equipped with a pair of axially separated solenoid coils and a multipole magnet structure extending between the coil pair. An axially-directed magnetic field and a transverse cusp field are respectively provided by the coils and the magnet. A working gas is contained within the chamber and is excited by applied microwave energy. The strengths of the two magnetic fields and the microwave frequency value are selected to produce a substantially closed electron cyclotron resonance (ECR) zone of proper size. This ECR zone is located axially between the solenoid fields. Baffling is used to separate the closed plasma ECR zone from the workpiece region of the chamber. A semiconductor wafer is positioned within the workpiece region to intercept most plasma particles which follow the axially directed magnetic lines passing through the ECR zone. Few of the particles from the closed ECR zone travel to destinations other than the wafer.
摘要翻译：圆柱形等离子体反应室配备有一对轴向分离的电磁线圈和在线圈对之间延伸的多极磁体结构。分别由线圈和磁体提供轴向磁场和横向尖点场。工作气体包含在室内，并被施加的微波能量激发。选择两个磁场的强度和微波频率值以产生具有适当尺寸的基本闭合的电子回旋共振（ECR）区域。该ECR区位于电磁场之间。 Baffling用于将封闭的等离子体ECR区域与腔室的工件区域分开。半导体晶片位于工件区域内，以拦截大部分遵循经过ECR区的轴向定向磁线的等离子体颗粒。来自闭合的ECR区域的少量颗粒行进到晶片以外的目的地。

9. 发明授权

US08668816B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08668816B2
公开(公告)日：2014-03-11
申请号：US11933157
申请日：2007-10-31
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在相同或不同的室中。此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。辅助磁体可以是永磁体或电磁体。

10. 发明申请

US20110220488A1 Apparatus and Method for Improved Darkspace Gap Design in RF Sputtering Chamber 有权
标题翻译： RF溅射室中改进的暗空间间隙设计的装置和方法
公开(公告)号：US20110220488A1
公开(公告)日：2011-09-15
申请号：US12723187
申请日：2010-03-12
申请人： John C. Forster , Xianmin Tang
发明人： John C. Forster , Xianmin Tang
IPC分类号： C23C14/34
CPC分类号： H01J37/3491 , B23K1/0008 , B23K31/02 , C23C14/3407 , H01J37/3435 , H01J37/3441 , H01J2237/332 , Y10T29/49826 , Y10T29/49947
摘要： Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.
摘要翻译：公开了改进的目标组件和暗区屏蔽的设计。还公开了改善暗室间隙的溅射室和溅射室中的暗空隙的改进方法。公开了一种目标组件，其具有基本上共面的背板，并且靶与暗空间屏蔽件垂直间隔开。

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